Diodes BAV70LP User Manual

DUAL SURFACE MOUNT SWITCHING DIODE

Features

• Fast Switching Speed

• Ultra-Small Leadless Surface Mount Package (1.0 * 0.6mm)

• Ultra-Low Profile Package (0.5mm)

• Low Forward Voltage

• Fast Reverse Recovery

• Low Capacitance

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

NEW PRODUCT

X1-DFN1006-3

Bottom View

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: Cathode Bar

• Terminals: Finish ⎯ NiPdAu over Copper Leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams

Top View

Internal Schematic

BAV70LP

Ordering Information (Note 3)

Part Number Case Packaging

BAV70LP-7 X1-DFN1006-3 3,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

3. For packaging details, go to our website at http://www.diodes.com.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

Marking Information

BAV70LP

Document number: DS31597 Rev. 4 - 2

JA

www.diodes.com

JA = Product Type Marking Code
Bar Denotes Cathode Side

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

TIME \@ "MMMM yyyy" January 2012

© Diodes Incorporated

)

θ

(BR)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

@ t = 1.0s

Thermal Characteristics

NEW PRODUCT

Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range

Characteristic Symbol Value Unit

V

T

V

RM

V

RRM

V

RWM

V

R(RMS

I

FM

I

O

I

FRM

I

FSM

P

R

, T

J

R

D
JA

STG

BAV70LP

100 V

75 V

53 V
300 mA
150 mA
450 mA

2.0

1.0

A

400 mW
312

-65 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)

V

R

75

⎯

V

0.715

Forward Voltage

V

F

⎯

0.855

1.0

V

1.25

2.5

Reverse Current (Note 5)

I

⎯

R

50
30
25

Total Capacitance
Reverse Recovery Time

Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

C

⎯

T

t

⎯

rr

2.0 pF

4.0 ns

μA
μA
μA

nA

IR = 2.5μA
I

= 1.0mA

F

= 10mA

I

F

I

= 50mA

F

= 150mA

I

F

V

= 75V

R

V

= 75V, TJ = 150°C

R

= 25V, TJ = 150°C

V

R

V

= 20V

R

VR = 0, f = 1.0MHz

= IR = 10mA,

I

F

= 0.1 x IR, RL = 100Ω

I

rr

BAV70LP

Document number: DS31597 Rev. 4 - 2

2 of 4

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January 2012

© Diodes Incorporated

P, P

O

R

P

TIO

N

NSTAN

TANEO

U

O

R

R

CUR

REN

T

TANT

O

US R

R

CUR

RENT

C, TOT

CAPACITAN

C

NEW PRODUCT

BAV70LP

500

1,000

(mA)

Note 4

400

100

(mW)

A

300

D

10

WA

DISSI

200

S F

1

WE

D

100

0

0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Power Derating Curve

100

0.1

F

0.01

I, I

0 0.2 0.4 0.6 0.8 1.0 1.2

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forwar d C haracte r istics, Per Element

1.10

(µA)

SE

EVE

10

1

0.1

T = 150ºC

A

T = 125ºC

A

T = 5ºCA8

1.00

E (pF)

0.90

AL

0.80

T

0.70
110100

V , DC REVERSE VOLT AGE (V)

R

Fig. 4 T otal Capacitance vs. Reverse Voltage, Per Element

ANE

R

I , INS

0.0001

0.01

0.001

0

20 40

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

T = 25ºC

A

T = - ºCA55

60 80 100

Fig. 3 Typical Reverse Characteristics, Per Element

Package Outline Dimensions

BAV70LP

Document number: DS31597 Rev. 4 - 2

A

X1-DFN1006-3

A1

D

Dim Min Max Typ

A 0.47 0.53 0.50

A1 0 0.05 0.03

b1 0.10 0.20 0.15
b2 0.45 0.55 0.50

b1

b2

E

e

D 0.95 1.075 1.00
E 0.55 0.675 0.60
e

⎯ ⎯

0.35

L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3

⎯ ⎯

0.40

All Dimensions in mm

L2

L1L3

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January 2012

© Diodes Incorporated

BAV70LP

Suggested Pad Layout

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

X

1

G2

X

C

Dimensions Value (in mm)

Z 1.1
G1 0.3
G2 0.2

X 0.7
X1 0.25

G1

Y

Z

IMPORTANT NOTICE

LIFE SUPPORT

Y 0.4

C 0.7

BAV70LP

Document number: DS31597 Rev. 4 - 2

4 of 4

www.diodes.com

January 2012

© Diodes Incorporated