Diodes BAV5004WS User Manual
)
Features
Fast Switching Speed: 50ns Maximum
400V High Reverse Breakdown Voltage Rating
Low Capacitance: 2.5pF Maximum
Surface Mount Package Ideally Suited for Automated Insertion
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Ordering Information (Note 4)
BAV5004WS
HIGH VOLTAGE SWITCHING DIODE
Mechanical Data
Case: SOD323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe.
Lead Free Plating. Solderable per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
SOD323
Top View
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
BAV5004WS-7 AEC-Q101 LY 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Maximum Ratings (@T
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Peak Repetitive Forward Current (Note 5)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
= +25°C, unless otherwise specified.)
A
LY
BAV5004WS
Document number: DS30733 Rev. 3 - 2
LY = Product Type Marking Code
Line Denotes Cathode Side
V
RRM
V
RWM
V
R
V
R(RMS
I
FM
I
FRM
I
FSM
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400 V
350 V
247 V
300 mA
625 mA
5.0
3.0
A
August 2013
© Diodes Incorporated
(BR)
P, P
OWER
PATIO
N
TAN
TANEO
US FORWAR
D CUR
REN
T
m
T
T
O
US R
R
CUR
RENT
C, TOT
C
P
C
TAN
C
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) (See figure 1)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
P
D
R
θJA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V
400
R
–
Forward Voltage
Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
V
F
I
R
C
T
t
rr
–
–
–
–
– 0.9 2.5 pF
– – 50 ns
–
–
–
–
–
–
250
1,000
(A)
200
N (mW)
100
10
150
Note 5
1
DISSI
100
0.1
D
50
0.01
S
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
Fig. 1 Power Derating Curve
0.001
F
I, I
0 0.2 0.4 0.6 0.8 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
100,000
(nA)
10,000
T = 10CA°
5
T = 12 CA°
5
1.00
0.95
0.90
200 mW
625 °C/W
-55 to +150 °C
– V
0.93
1.09
V
1.29
100
T = 1 0CJ°
T = 12 CJ°
1
5
μA
μA
5
T = 25CJ°
T = 5CJ-5
Fig. 2 Typical Forward Characteristics
BAV5004WS
IR = 150µA
= 20mA
I
F
I
= 100mA
F
= 200mA
I
F
= 240V
V
R
V
= 240V, TJ = +150°C
R
VR = 0V, f = 1.0MHz
= IR = 30mA,
I
F
= 3.0mA, RL = 100Ω
I
rr
T = 8 CJ°
5
°
1.41.2
E (pF)
SE
EVE
ANE
AN
1,000
100
10
T = 8 CA°
5
T = 25CA°
T = -55CA°
1
I
A
A
AL
T
0.85
0.80
0.75
0.70
0.65
0.60
0.55
R
0.1
I, INS
050
V , INSTANTANEOUS REVERSE VOLTAGE (V)
100
150 200 250
R
300
350
400
Fig. 3 Typical Reverse Characteristics
BAV5004WS
Document number: DS30733 Rev. 3 - 2
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0.50
010203040
V , DC REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance vs. Reverse Voltage
August 2013
© Diodes Incorporated
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