Diodes BAV5004LP User Manual

Features

• Fast Switching Speed: 50ns Maximum

• 400V High Reverse Breakdown Voltage Rating

• Low Capacitance: 2.5pF Maximum

• Surface Mount Package Ideally Suited for Automated Insertion

• Lead Free by Design/RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Notes 2 & 3)

• Qualified to AEC-Q101 Standards for High Reliability

X1-DFN1006-2

Bottom View

BAV5004LP

HIGH VOLTAGE SWITCHING DIODE

Mechanical Data

• Case: X1-DFN1006-2

• Case Material: Molded Plastic, “Green” Molding Compound.

(Note 2) UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

2

1

Device Schematic

Ordering Information (Note 4)

Part Number Case Packaging

BAV5004LP-7B X1-DFN1006-2 10,000/Tape & Reel

Notes: 1. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

BAV5004LP

Document number: DS32181 Rev. 5 - 2

www.diodes.com

LY = Product Type Marking Code
Line Denotes Cathode Side

1 of 4

April 2012

© Diodes Incorporated

)

θ

(BR)

P

P

O

R

PATIO

N

TAN

TAN

O

U

F

O

R

RD CUR

R

N

T

m

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Peak Repetitive Forward Current (Note 5)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

@ t = 1.0ms

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) (See figure 1)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range

V

T

V

RRM

V

RWM

V

R

R(RMS

I

FM

I

FRM

I

FSM

P

D

R

JA

, T

J

STG

BAV5004LP

400 V
350 V
247 V

300 mA
625 mA

5.0

3.0

A

350 mW
357

-55 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 6)

Forward Voltage

Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time

Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

V

V

F

I

R

C

T

t

rr

400

R

⎯ ⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

0.9 2.5 pF

⎯

⎯ ⎯

V

0.93

1.09

V

1.29
1

μA

100

μA

50 ns

IR = 150μA
I

= 20mA

F

= 100mA

I

F

I

= 200mA

F

= 240V

V

R

= 240V, TJ = 150°C

V

R

VR = 0V, f = 1.0MHz

= IR = 30mA,

I

F

I

= 3.0mA, RL = 100Ω

rr

500

1,000

(A)

100

E

WA

S
E

10

0.1

0.01

T = 10C

°

5

J

T = 12 C

°

5

J

1

T = 8 C

°

5

J

T = 25C

°

J

T = 5CJ-5

°

N (mW)

DISSI
WE

,

D

400

300

200

100

S

0.001

0

0

30 60

T , AMBIENT TEMPERATURE (°C)

A

90 120 150

Fig. 1 Power Derating Curve

F

I, I

0 0.2 0.4 0.6 0.8 1.0

V , INSTANTANE OUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forward Characteristics

1.41.2

BAV5004LP

Document number: DS32181 Rev. 5 - 2

2 of 4

www.diodes.com

April 2012

© Diodes Incorporated