Diodes BAT750 User Manual
BAT750
C
A
C
N/C
A
Top view
SOT23 Schottky barrier diode
Summary
VR = 40V
I
= 750mA
F
V
< 490mV @ 750mA
F
Description
A high current Schottky barrier diode in a small outline surface mount
package for applications where space is limited.
Features
•Low V
• High current capability
• SOT23 package
F
Applications
• DC-DC converters
• Mobile telecoms
•PCMIA
Ordering information
Device Reel size
(inches)
BAT750TA 7 8 3000
Tape width
(mm)
Quantity
per reel
Device marking
1G1
Issue 2 - May 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
BAT750
NOTES:
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector reverse voltage V
RMS reverse voltage V
R(RMS)
Forward current (continuous) I
Forward voltage @ I
= 750mA V
F
Average peak forward current; DC = 50% I
Non repetitive forward current tⱕ100S
I
FSM
tⱕ8.3ms
Power dissipation @ T
= 25°C P
amb
Typical thermal resistance, junction to ambient air R
Storage temperature range T
Junction temperature T
R
F
F
FAV
tot
⍜JA
stg
j
40 V
28 V
750 mA
490 mV
1500 mA
12
A
5.5
350 mW
286 °C/W
-55 to +150 °C
125 °C
Electrical characteristics (@ T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse breakdown
V
(BR)R
40 60 V IR = 300A
voltage
Forward voltage V
Reverse current I
Diode capacitance C
Reverse recovery time t
(*) Measured under pulsed conditions. Pulse width = 300 duty cycle ⱕ2%.
F
R
D
rr
225 280 mV
235 310 mV
290 350 mV
340 420 mV
390 490 mV
440 540 mV
530 650 mV
= 50mA
I
F
= 100mA
I
F
I
= 250mA
F
I
= 500mA
F
= 750mA
I
F
= 1000mA
I
F
I
= 1500mA
F
50 100 AVR = 30V
25 - pF VR = 25V, f = 1.0MHz
5-nsI
= IR = 100mA,
F
= 10mA
I
rr
(*)
(*)
(*)
(*)
(*)
(*)
(*)
Issue 2 - May 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
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