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Features
• Fast Switching
• Ultra-Small Surface Mount Package
• PN Junction Guard Ring for Transient and ESD Protection
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 3 and 5)
Maximum Ratings @T
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Forward Surge Current (Note 1) @ t < 1.0s
.
= 25°C unless otherwise specified
A
BAT54WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Mechanical Data
• Case: SOD-323
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Leads: Solderable per MIL-STD-202, Method 208
• Also Available in Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe). Polarity: Cathode Band
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.004 grams (approximate)
Top View
V
V
V
R(RMS)
I
I
RRM
RWM
VR
IO
IF
FRM
FSM
30 V
21 V
100 mA
200 mA
300 mA
600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range (Note 4)
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. > thermal runaway condition for a diode on its own heatsink.
d P
d T
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
BAT54WS
Document number: DS30098 Rev. 11 - 2
tot
1
R
θJA
= 25°C unless otherwise specified
A
PD
R
JA
θ
TJ, T
STG
30
⎯ ⎯
V
VFM
(BR)R
IRM ⎯ ⎯
CT ⎯ ⎯
trr ⎯ ⎯
1 of 3
www.diodes.com
-65 to +150
⎯ ⎯
240
320
400
500
1000
2.0
10 pF
5.0 ns
Fire Retardants.
2O3
200 mW
625
°C/W
°C
V
IR = 100μA
IF = 0.1mA
IF = 1mA
mV
IF = 10mA
IF = 30mA
IF = 100mA
μA
VR = 25V
VR = 1.0V, f = 1.0MHz
IF = 10mA through IR = 10mA
to IR = 1.0mA, RL = 100Ω
© Diodes Incorporated
August 2008
BAT54WS
1
100
(A)
E
0.1
10
D
WA
A
S
F
I, I
0.0001
T = 125ºC
0.01
A
0.001
0
0.2
V , INSTANTANEOUS F O RWARD VOLTAGE (V)
F
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A
T = -40ºC
A
0.6
Fig. 1 Typical Forward C haracter istics
12
0.8
f = 1.0MHz
1.00.4
1
0.1
0.01
0.001
5101520
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
1,000
V = 25V
R
25
30
10
)
E (p
8
6
AL
4
T
R
I , LEAKAGE CURRENT (µA)
100
10
1
2
0
0
10
5
V , DC REVERSE VOLTAGE (V)
R
15
20
Fig. 3 Total Capacitance vs. Reverse Voltage
25
30
0.1
0
50 100
T , JUNCTION TEMPERA TURE ( C)
J
Fig. 4 Typical Reverse Characteristics
150
°
200
(mW)
DISSI
100
D,
0
0255075100125
T , AMBIENT TEMPERATURE ( C)
A
Fig. 5 Power Derating Curve
150
°
BAT54WS
Document number: DS30098 Rev. 11 - 2
2 of 3
www.diodes.com
August 2008
© Diodes Incorporated