Diodes BAT54 User Manual

SOT23 SILICON EPITAXIAL

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SCHOTTKY BARRIER DIODES

ISSUE 1 SEPTEMBER 1995 ✪

BAT54 SERIES

1

BAT54 BAT54A BAT54S BAT54C Device Type

SINGLE COMMON

ANODE

SERIES COMMON

CATHODE

Pin Configuration

L4Z L42 L44 L43 Partmarking Detail

FEATURES: Low V

& High Current Capability

F

APPLICATIONS: PSU, Mobile Telecomms & SCSI

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Continuous Reverse Voltage V

Forward Current I

Forward Voltage @ I

=10mA V

F

Repetitive Peak Forward Current I

Non Repetitive Forward Current t<1s I

Power Dissipation at T

=25°C P

amb

Storage Temperature Range T

JunctionTemperature ¤ T

R

F

F

FRM

FSM

tot

stg

j

30 V

200 mA

400 mV

300 mA

600 mA

330 mW

-55 to +150 °C

125 °C

2

3

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Reverse Breakdown
Voltage

Forward Voltage V

Reverse Current I

Diode Capacitance C

Reverse Recover
Time

V

R

t

rr

(BR)R

F

D

30 50 V

240

135

320

200

400

280

500

350

1000

530

2.5 4

7.5 10 pF f=1MHz,VR=1V

5nsswitched from

mV
mV
mV
mV
mV

µA

I

I
I
I
I
I

V

I
R
at I

¤ Dual Device; For simultaneous continuous use T

=100°C.

j

3 - 43 - 5

=10µA

R

=0.1mA

F

=1mA

F

=10mA

F

=30mA

F

=100mA

F

=25V

R

=10mA to IR=10mA

F

=100Ω, Measured

L

=1mA

R

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TYPICAL CHARACTERISTICS

BAT54 SERIES

1

100m

10m

1m

100

µ

10

µ

0.15 0.45 0.75

0

+125°C
+85°C
+25°C

0.60.3

0.9

Forward Voltage VF (V)

IF v VF Characteristics

15

10

5

0

020

10

30

Reverse Voltage VR (V)

CT v VR Characteristics

10m

1m

+125°C

100

+85°C

µ

10

µ

+25°C

1

µ

0

10 20

Reverse Voltage VR(V)

IR v VR Characteristics

330

270

180

90

0

0 50 100 150

TA - Ambient Temperature ( °C)

PD v TA Characteristics

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