Diodes BAS521LP User Manual
BAS521LP
HIGH VOLTAGE SWITCHING DIODE
Features
• Fast Switching Speed: Maximum of 50 ns
• High Reverse Breakdown Voltage: 325V
• Low Leakage Current: Maximum of 50nA when V
Maximum of 150nA when V
• Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
= 250V at Room Temperature
R
= 5V or
R
X1-DFN1006-2
Bottom View
Mechanical Data
• Case: X1-DFN1006-2
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (approximate)
2
1
Device Schematic
Ordering Information (Note 3)
Part Number Case Packaging
BAS521LP-7 X1-DFN1006-2 3,000/Tape & Reel
BAS521LP-7B X1-DFN1006-2 10,000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
BAS521LP-7 BAS521LP-7B
Top View
Dot Denotes
Cathode Side
Bar Denotes
Cathode Side
9898
Top View
98 = Product Type Marking Code
BAS521LP
Document number: DS32176 Rev. 5 - 2
1 of 4
www.diodes.com
April 2011
© Diodes Incorporated
θ
(BR)
P
P
OWER
P
TIO
NSTAN
TAN
O
US F
O
R
RD C
U
R
R
N
T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
Repetitive Peak Forward Current @ t=8.3ms (Note 4)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
BAS521LP
V
RRM
V
RWM
V
R
I
F
I
FSM
I
FRM
P
D
R
JA
, T
T
J
STG
325 V
325 V
400 mA
8.0 A
3.0 A
400 mW
312
-65 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
V
R
V
F
I
R
C
T
t
rr
400
350
Note 4
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.1 V
50
150
100
5 pF
50 ns
1,000
(mA)
V
nA
nA
μA
E
300
100
N (mW)
250
A
WA
200
10
DISSI
150
,
100
D
E
1
IR = 100μA
IF = 100mA
= 5V
V
R
V
= 250V
R
= 250V, TJ = 150°C
V
R
VR = 0, f = 1.0MHz
= IR = 30mA,
I
F
= 0.1 x IR, RL = 100Ω
I
rr
50
0
0
25
50 75
T , AMBIENT TEMPERATURE ( C)
A
125 175
100
150
°
Fig. 1 Power Derating Curve
0.1
F
I, I
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , INSTANTANE OUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
BAS521LP
Document number: DS32176 Rev. 5 - 2
2 of 4
www.diodes.com
April 2011
© Diodes Incorporated
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