Diodes BAS40V User Manual

V

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Features

• Low Forward Voltage Drop

• Fast Switching

• PN Junction Guard Ring for Transient and ESD Protection

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 4)

Maximum Ratings @T

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Forward Continuous Current (Note 2)
Forward Surge Current (Note 2) @ t < 1.0s

Top View Bottom View

= 25°C unless otherwise specified

A

BAS40

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 2

• Ordering Information: See Page 2

• Weight: 0.003 grams (approximate)

C1NC A

A1NC

Device Schematic

V

RRM

V

RWM

VR
IFM

I

FSM

2

C

2

40 V

200 mA
600 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating Temperature Range
Storage Temperature Range

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 3)
Forward Voltage
Reverse Leakage Current (Note 3)

Total Capacitance
Reverse Recovery Time

Notes: 1. No purposefully added lead.

BAS40V

Document number: DS30561 Rev. 4 - 2

2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 25°C unless otherwise specified

A

PD

R

JA

θ

TJ

T

STG

V

(BR)R

VF

IR

CT

trr

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150 mW

-55 to +125

-65 to +150

380

1000

833

mV

40 — — V
— —
— 20 200 nA

— 4.0 5.0 pF
— — 5.0 ns

°C/W

°C
°C

IR = 10μA
tp < 300μs, IF = 1.0mA
tp < 300μs, IF = 40mA
tp < 300μs, VR = 30V
VR = 0V, f =1.0MHz
IF = IR = 10mA to IR = 1.0mA,
RL = 100Ω

July 2008

© Diodes Incorporated

V

TANT

O

US R

R

CUR

R

T

NSTAN

TANEO

US FOR

R

CUR

REN

T

C, TOT

CAPACITANC

F

P, P

OWER

PATIO

1

(A)

0.1

D
WA

0.01

0.001

F

I, I

0.0001
01

3

)
E (p

2

0.2

V , INSTANTA NEOUS FORW ARD VOL TAGE (V)

F

Fig. 1 Typical Forward Characteristics

0.4

0.6

0.8

.0

10,000

(nA)

1,000

EN

100

SE

EVE

ANE

R

I , INS

250

200

N (mW)

150

10

1

0.1
0

V , INSTANTANEOUS REVERSE VOLT AGE (V)

10 20

R

Fig. 2 Typical Reverse Characteristics

BAS40

30 40

DISSI

100

AL

1

D

T

0

0

Fig. 3 Total Capacitance vs. Reverse Voltage

10

V , DC REVERSE VOL TAGE (V)

R

20

4030

50

0

-50

050100

T , AMBIENT TEMPERATURE ( C)

A

Fig. 4 Derating Curve - Total

°

150

Ordering Information (Note 5)

Part Number Case Packaging

BAS40V-7 SOT-563 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

BAS40V

Document number: DS30561 Rev. 4 - 2

KAN

YM

www.diodes.com

KAN = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)

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July 2008

© Diodes Incorporated