Diodes BAS40LP User Manual
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Leadless Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Top View
X1-DFN1006-2
BAS40LP
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Mechanical Data
Case: X1-DFN1006-2
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Dot
Terminals: Finish - NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Bottom View
e4
Ordering Information (Note 4)
Part Number Case Packaging
BAS40LP-7 X1-DFN1006-2 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
BAS40LP
Document number: DS30503 Rev. 13 - 2
www.diodes.com
43 = Product Type Marking Code
Dot Denotes Cathode Side
1 of 5
November 2013
© Diodes Incorporated
(BR)
p
N
TAN
T
NEO
U
FOR
R
C
U
R
R
N
T
N
N
N
O
US R
R
C
URREN
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Repetitive Peak Forward Current (note 6) I
Non-Repetitive Peak Forward Surge Current @ tp = 1.0s (note 7)
V
V
I
RRM
RWM
VR
I
FM
FRM
FSM
40 V
200 mA
800 mA
1000 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating Temperature Range
Storage Temperature Range
P
D
R
θJA
T
J
T
STG
250 mW
400
-55 to +125
-65 to +150
BAS40LP
C/W
C
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
Forward Voltage (Note 3)
Reverse Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Repetitive peak forward current was tested with with tp ≤1s and ∂ ≤ 0.8 square wave
7. Non-repetitive peak forward current was tested with tp=1s square wave
1
(A)
V
V
I
R
C
t
rr
E
40 — — V
R
— —
F
— 20 200 nA
— 2.3 5.0 pF
T
— — 5.0 ns
380
1000
10,000
T (nA)
IR = 10μA
< 300μs, IF = 1.0mA
t
p
mV
< 300μs, IF = 40mA
t
tp < 300μs, VR = 30V
VR = 0V, f =1.0MHz
= IR = 10mA to IR = 1.0mA,
I
F
R
= 100Ω
L
1,000
0.1
D
100
WA
0.01
S
SE
EVE
10
A
0.001
E
TA
1
S
F
I, I
0.0001
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.40.2
0.6
0.8
Fig. 1 Typical Forward Voltage
1.0
STA
I, I
0.1
R
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
10 20
R
Fig. 2 Typical Reverse Characteristics
30 40
BAS40LP
Document number: DS30503 Rev. 13 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
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