Diodes BAS116LPH4 User Manual

Features

• Fast Switching Speed

• Ultra-Small Leadless Surface Mount Package (1.0*0.6mm)

• Ultra-Low Profile Package (0.4mm)

• Low Forward Voltage

• Fast Reverse Recovery

• Low Capacitance

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

NEW PRODUCT

Mechanical Data

• Case: X2-DFN1006-2

• Case Material: Molded Plastic, "Green" Molding Compound. UL

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: Cathode Bar

• Terminals: Finish - NiPdAu over Copper leadframe. Solderable

• Weight: 0.0009 grams (approximate)

X2-DFN1006-2

Bottom View

SURFACE MOUNT SWITCHING DIODE

Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

BAS116LPH4

Ordering Information (Note 3)

Part Number Case Packaging

BAS116LPH4-7B X2-DFN1006-2 10,000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

BAS116LPH4

Document number: DS35242 Rev. 5 - 2

5K

www.diodes.com

5K = Product Type Marking Code
Bar Denotes Cathode Side

1 of 4

November 2011

© Diodes Incorporated

)

θ

(BR)

P

P

O

R

PATIO

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current (Note 4)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

@ t = 1.0ms
@ t = 1.0s

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range

NEW PRODUCT

V

V

V

R(RMS

I

I

T

RRM
RWM

VR

IFM

FRM

FSM

R

, T

J

BAS116LPH4

P

D
JA

STG

85 V

60 V
215 mA
500 mA

4.0

1.0

A

0.5

300 mW
417

°C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)

Forward Voltage

Leakage Current (Note 5)
Total Capacitance

Reverse Recovery Time

Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

V

VF

IR ⎯ ⎯

CT ⎯

trr ⎯ ⎯

300

Note 4

N (mW)

250

200

R

85

⎯ ⎯

⎯ ⎯

1.5

1,000

100

0.9

1.0

1.1

1.25

5.0
80

⎯

3.0

V

V

nA
nA

pF
μs

IR = 100μA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 0, f = 1.0MHz
IF = IR = 10mA,
I

10

150

DISSI
WE

,

D

100

50

1

0.1

= 0.1 x IR, RL = 100Ω

rr

F

0.01

0

0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Power Derating Curve, Total Package

I , INST ANTANEOUS FORWARD CURRENT (mA)

0 0.2 0.4 0.6 0.8 1.0 1.2

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typi cal Forward C haracter istics

BAS116LPH4

Document number: DS35242 Rev. 5 - 2

2 of 4

www.diodes.com

November 2011

© Diodes Incorporated