Diodes BAS116LP3 User Manual

Features
Ultra-Small Leadless Surface Mount Package (0.6 x 0.3mm)
Ultra-Low Profile Package (0.3mm)
Very Low Leakage Current
Low Capacitance
Ideal for Compact Battery Powered Portable Electronics
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE
Mechanical Data
Case: X3-DFN0603-2
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Bar
Terminals: Finish Matte Tin Finish over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.2mg (Approximate)
Top View Bottom View
BAS116LP3
e3
Ordering Information (Note 4)
Part Number Case Packaging
BAS116LP3-7 X3-DFN0603-2 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
BAS116LP3
Document number: DS35241 Rev. 6 - 2
BA
www.diodes.com
BA = Product Type Marking Code Bar Denotes Cathode Side
1 of 4
April 2013
© Diodes Incorporated
V
V
P
P
O
R
P
T
O
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0ms @ t = 1.0s
Thermal Characteristics
Characteristic Symbol
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
V
V
V
R(RMS)
I
I
T
RRM
RWM
VR
IFM
FRM
FSM
R
, T
J
BAS116LP3
alue Unit
P
D
θJA
STG
85 V
60 V
215 mA
500 mA
4.0
1.0
A
0.5
alue Unit
250 mW
500
C/W
-65 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
Forward Voltage
V
(BR)R
VF
85
0.75
0.9
1.0
1.15
0.95
1.10
1.20
1.35
V
V
10.0
Leakage Current (Note 6)
IR
100
nA
500
Total Capacitance
Reverse Recovery Time
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
CT
trr
1.6 3.0 pF
120 3000 ns
300
250
1,000
T = 150ºC
A
100
N (mW)
200
I A
DISSI
WE
,
D
150
100
50
10
1
T = 125ºC
A
T = 85ºC
A
IR = 100µA
IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA
VR = 75V VR = 1V, TJ = +150°C VR = 75V, TJ = +150°C
VR = 0, f = 1.0MHz
IF = IR = 10mA, I
= 0.1 x IR, RL = 100
rr
T = 25ºC
A
T = -55ºC
A
F
0
0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1 Power Derating Curve, Total Package
0.1
I , INSTANTANEOUS FORWARD CURRENT (mA)
0 0.4 0.8 1.2 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 2 Typical Forward Characteristics
BAS116LP3
Document number: DS35241 Rev. 6 - 2
2 of 4
www.diodes.com
April 2013
© Diodes Incorporated
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