Diodes B1100LB User Manual
Features
• Guard Ring Die Construction for Transient Protection
• Ideally Suited for Automated Assembly
• Low Power Loss, High Efficiency
• Surge Overload Rating to 50A Peak
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
• High Temperature Soldering: 260°C/10 Second at Terminal
• Lead Free Finish, RoHS Compliant (Note 1)
• Green Molding Compound (No Halogen and Antimony)
(Note 2)
Top View
Green
B1100LB
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Mechanical Data
• Case: SMB
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band or Cathode Notch
• Weight: 0.093 grams (approximate)
Bottom View
Ordering Information (Note 3)
Part Number Case Packaging
B1100LB-13-F SMB 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Note: Device has a cathode band and may also have a cathode notch.
B1100LB
Document number: DS30077 Rev. 10 - 2
YWW
B1100LB
B1100LB = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 02 for 2002)
WW = Week code (01 to 53)
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)
θ
TANT
O
US FORWAR
C
URRENT
C
T
O
T
F
C
PACIT
N
C
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage @ I
= 0.5mA
R
RMS Reverse Voltage
Average Rectified Output Current @ TT = 120°C
@ T
= 100°C
T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range (Note 5)
V
RRM
V
RWM
V
V
R(RMS
I
I
FSM
R
T
J, TSTG
B1100LB
R
O
JT
100 V
70 V
1.0
2.0
A
50 A
22
-65 to +175
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
Leakage Current (Note 6)
Total Capacitance
Notes: 4. Valid provided that terminals are kept at ambient temperature.
6. Short duration pulse test used to minimize self-heating effect.
5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
10
(A)
D
1.0
0.1
ANE
V
F
I
R
C
T
- - 0.75 V
-
-
-
-
0.5
5.0
mA
- - 100 pF
/dTJ < 1/R
D
.
θJA
280
240
)
E
200
IF = 1.0A, TA = 25°C
= 100V, TA = 25°C
V
R
= 100V, TA = 100°C
V
R
VR = 4V, f = 1MHz
f = 1.0MHz
°
T = 25C
j
A
160
A
120
AL (p
80
,
T
40
F
I , INS
0.01
0 0.2 0.4 0.6 0.8 1.0
V , INSTANTANEOUS FORWARD VOL TAGE (V)
F
Fig. 1 Typical Forward Characteristics
0
10.1 10 100
V , DC (V)
REVERSE VOLTAGE
R
Fig. 2 T otal Capacitance vs. Reverse Voltage
B1100LB
Document number: DS30077 Rev. 10 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated
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