Diodes B170B, B1100B User Manual
Features
• Guard Ring Die Construction for Transient Protection
• Ideally Suited for Automated Assembly
• Low Power Loss, High Efficiency
• Surge Overload Rating to 30A Peak
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
• High Temperature Soldering: 260°C/10 Second at Terminal
• Lead Free Finish/RoHS Compliant (Note 1)
• Green Molding Compound (No Halogen and Antimony)
(Note 2)
Top View Bottom View
Green
B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Mechanical Data
• Case: SMA / SMB
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band or Cathode Notch
• Weight: SMA 0.064 grams (approximate)
SMB 0.093 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
B1x-13-F SMA 5000/Tape & Reel
B1xB-13-F SMB 3000/Tape & Reel
*x = Device type, e.g. B180-13-F (SMA package); B1100B-13-F (SMB package).
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
xxx(x)
YWW
XXX = Product type marking code, ex: B170 (SMA package)
XXXX = Product type marking code, ex: B190B (SMB package)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code 01 to 52
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θ
TANT
O
U
F
O
RWARD CUR
RENT
C
T
O
T
CAPACITANC
F
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol B170/B B180/B B190/B B1100/B Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V
V
DC Blocking Voltage
RMS Reverse Voltage
V
R(RMS
Average Rectified Output Current @ TT = 125°C IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Reverse Current
I
I
Thermal Characteristics
Characteristic Symbol B170/B B180/B B190/B B1100/B Unit
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range
R
T
J, TSTG
RRM
RWM
VR
FSM
RRM
JT
B170/B - B1100/B
70 80 90 100 V
49 56 63 70 V
1.0 A
30 A
1.0 A
25
-65 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
Leakage Current (Note 5)
Total Capacitance
Notes: 4. Valid provided that terminals are kept at ambient temperature.
5. Short duration pulse test used to minimize self-heating effect.
10
(A)
1.0
S
0.1
ANE
VF
IR
CT
- -
-
-
0.79
0.69
-
-
0.5
5.0
- - 80 pF
1,000
)
E (p
100
AL
,
T
IF = 1.0A, TA = 25°C
V
IF = 1.0A, TA = 100°C
@ Rated VR, TA = 25°C
mA
@ Rated VR, TA = 100°C
VR = 4V, f = 1MHz
T = 25°C
J
I Pulse Width = 300µs
F
I , INS
0.01
0 0.2 0.4 0.6 0.8 1.0
V , INSTANTANEOUS FORW ARD VOLTAGE (V)
F
Fig. 1 Typical Forward Characteristics
F
10
0.1 1 10 100
V , DC REVERSE VOLTAGE (V)
R
Fig. 2 Total Capacitance vs. Reverse Voltage
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
2 of 4
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September 2010
© Diodes Incorporated
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