Diodes AZV831, AZV832 User Manual

p

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
In

ut/Output CMOS Operational Amplifiers MOS Operational

General Description

The AZV831/AZV832 is single/dual channels
rail-to-rail input and output amplifier, which provides
a wide input common-mode voltage range and output
voltage swing capability for maximum signal swings
in low supply voltage applications. The device is
fully specified to operate from 1.6V to 5.0V single
supply, or ±0.8V and ±2.5V dual supply applications.
It features very low supply current dissipation 70µA
per channel, which is well suitable for today's
low-voltage and/or portable systems.

The AZV831/AZV832 features optimal performance
in very low bias current of 1pA, which enables the IC
to be used for integrators, photodiode amplifiers, and
piezoelectric sensors etc. The device has typical

0.5mV input offset voltage and provides 1MHz
bandwidth.

The AZV831/AZV832 adopts the latest packaging
technology to meet the most demanding
space-constraint applications. The AZV831 is
available in standard SOT-23-5 and SC-70-5
packages. The AZV832 is offered in the traditional
MSOP-8 and SOIC-8 packages.

SC-70-5 SOT-23-5 SOIC-8 MSOP-8

Figure 1. Package Types of AZV831/AZV832

Features

• Single Supply Voltage Range: 1.6V to 5.5V

• Ultra-low Input Bias Current: 1pA (Typ.)

• Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.)

• Rail-to-Rail Input

V

: 300mV beyond Rails @ VCC=5V

CM

Rail-to-Rail Output Swing:

10k

1kΩ Load: 25mV from Rail

• Supply Current: 70µA/Amplifier

• Unity Gain Stable

• Slew Rate: 0.45V/µs @ V

• Operation Ambient Temperature Range: -40ºC

Ω Load: 4mV from Rail

Gain Bandwidth Product: 1.0MHz

to 85ºC

Applications

• Sensors

• Photodiode Amplification

• Battery-Powered Instrumentation

• Pulse Blood Oximeter, Glucose Meter

AZV831/2

=5.0V

CC

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

1

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Pin Configuration

KS/K Package

（SC-70-5/SOT-23-5）

OUTPUT VCC

1

5

VEE

2

IN+ IN-

34

AZV831

M/MM Package

(SOIC-8/MSOP-8)

OUTPUT 1 VCC

1

8

IN 1- OUTPUT 2

2

7

IN 1+ IN 2-

3

6

VEE

4

5

IN 2+

AZV832

Figure 2. Pin Configuration of AZV831/2 (Top View)

AZV831/2

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

2

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Function Block Diagram

AZV831/2

+

-

5

VCC

4

IN-

IN+

3

Class

AB

Control

1

OUTPUT

+

-

2

VEE

For AZV831

+

-

8

VCC

IN1-/IN2-

IN1+/IN2+

2,6

3,5

Class

AB

Control

1,7

OUTPUT1/

OUTPUT2

+

For AZV832/Amplifier

Figure 3. Functional Block Diagram of AZV831/2

-

4

VEE

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

3

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Ordering Information

AZV831/2 -

Circuit Type G1: Green

Package Blank: Tube
KS: SC-70-5 (AZV831)

K: SOT-23-5 (AZV831)

M: SOIC-8 (AZV832)
MM: MSOP-8 (AZV832)

TR: Tape & Reel

AZV831/2

Package

SC-70-5

SOT-23-5

SOIC-8

MSOP-8

BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.

Temperature

Range

-40 to 85°C

-40 to 85°C

-40 to 85°C

-40 to 85°C

Part Number Marking ID

AZV831KSTR-G1 L3 Tape & Reel

AZV831KTR-G1 G4D Tape & Reel

AZV832M-G1 832M-G1 Tube
AZV832MTR-G1 832M-G1

AZV832MM-G1 832MM-G1

AZV832MMTR-G1 832MM-G1

Packing

Type

Tape & Reel

Tube

Tape & Reel

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

4

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Power Supply Voltage VCC 6.0 V

Differential Input Voltage VID 6.0 V

Input Voltage VIN -0.3 to VCC+0.5 V

Operating Junction Temperature TJ 150 ºC

SC-70-5 270

Thermal Resistance
(Junction to Ambient)

θ

JA

SOT-23-5 220

SOIC-8 150

MSOP-8 200

ºC /W

Storage Temperature Range T

Lead Temperature (Soldering,10 Seconds) T

ESD (Human Body Model) 4000 V

ESD (Machine Model) 300 V

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.

-65 to 150 ºC

STG

260 ºC

LEAD

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Supply Voltage VCC 1.6 5.5 V

Operation Ambient Temperature
Range

-40 85 ºC

T

A

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

5

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

1.6V DC Electrical Characteristics

VCC=1.6V, VEE=0, V

OUT=VCC

Parameter Symbol Conditions Min Typ Max Unit

Input Offset Voltage VOS 0.5 2.5 mV

Input Bias Current IB 1.0 pA

Input Offset Current IOS 1.0 pA

Input Common-mode Voltage Range VCM -0.2 1.8 V

Common-mode Rejection Ratio CMRR VCM=-0.2V to 1.8V 55 75 dB

Large Signal Voltage Gain GV

Input Offset Voltage Drift ∆VOS/∆T 2.0

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

=10kΩ to VCC/2,

R

L

=0.2V to 1.4V

V

OUT

90 110 dB

µV/ °C

RL=1kΩ to VCC/2 30 50

Output Voltage Swing from Rail VOL/V

OH

mV

RL=10kΩ to VCC/2 3 15

Sink I

Output Current

Source I

Closed-loop Output Impedance Z

Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V

Supply Current (Per Amplifier) ICC V

V

SINK

SOURCE

OUT

OUT=VCC

V

OUT

f=10kHz, AV=1 9 Ω

OUT=VCC

8 10

=0V 5 8.5

66 80 dB

/2, I

=0 70 90 µA

OUT

mA

1.6V AC Electrical Characteristics

=1.6V, VEE=0, V

V

CC

OUT=VCC

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

Parameter Symbol Conditions Min Typ Max Unit

Gain Bandwidth Product GBP RL=100kΩ 1.0 MHz

Slew Rate (Note 2) SR

Phase Margin φM RL=100kΩ 67 Degrees

Total Harmonic Distortion+Noise THD+N

Voltage Noise Density en f=1kHz 27

Note 2: Number specified is the positive slew rate.

.

1V Step,

=100pF, RL=10kΩ

C

L

f=1kHz, A

=10kΩ, CL=100pF

R

L

=1, VIN=1Vpp

V

0.32 V/µs

-70 dB

HznV/

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

6

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

1.8V DC Electrical Characteristics

VCC=1.8V, VEE=0, V

OUT=VCC

Parameter Symbol Conditions Min Typ Max Unit

Input Offset Voltage VOS 0.5 2.5 mV

Input Bias Current IB 1.0 pA

Input Offset Current IOS 1.0 pA

Input Common-mode Voltage Range VCM -0.2 2.0 V

Common-mode Rejection Ratio CMRR VCM=-0.2V to 2.0V 55 75 dB

Large Signal Voltage Gain GV

Input Offset Voltage Drift ∆VOS/∆T 2.0

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

=10kΩ to VCC/2,

R

L

=0.2V to 1.6V

V

OUT

90 112 dB

µV/ °C

RL=1kΩ to VCC/2 25 50

Output Voltage Swing from Rail VOL/V

OH

mV

RL=10kΩ to VCC/2 3 15

Sink I

Output Current

Source I

Closed-loop Output Impedance Z

Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V

Supply Current (Per Amplifier) ICC V

V

SINK

SOURCE

OUT

OUT=VCC

V

OUT

f=10kHz 9 Ω

OUT=VCC

12 16

=0V 10 14

66 80 dB

/2, I

=0 70 90 µA

OUT

mA

1.8V AC Electrical Characteristics

=1.8V, VEE=0, V

V

CC

OUT=VCC

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

Parameter Symbol Conditions Min Typ Max Unit

Gain Bandwidth Product GBP RL=100kΩ 1.0 MHz

Slew Rate (Note 2) SR

1V Step,

=100pF, RL=10kΩ

C

L

0.34 V/µs

Phase Margin φM RL=100kΩ 67 Degrees

Total Harmonic Distortion+Noise THD+N

f=1kHz, A

=10kΩ, CL=100pF

R

L

Voltage Noise Density en f=1kHz 27

=1, VIN=1Vpp

V

-70 dB

HznV/

Note 2: Number specified is the positive slew rate.

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

7

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

3.0V DC Electrical Characteristics

VCC=3.0V, VEE=0, V

OUT=VCC

Parameter Symbol Conditions Min Typ Max Unit

Input Offset Voltage VOS 0.5 2.5 mV

Input Bias Current IB 1.0 pA

Input Offset Current IOS 1.0 pA

Input Common-mode Voltage Range VCM -0.3 3.3 V

Common-mode Rejection Ratio CMRR

Large Signal Voltage Gain GV

Input Offset Voltage Drift ∆VOS/∆T 2.0

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

V

=-0.3V to 1.8V 62 80

CM

VCM=-0.3V to 3.3V 58 75

R

=1kΩ to VCC/2 ,

L

=0.2V to 2.8V

V

OUT

RL=10kΩ to VCC/2,

=0.1V to 2.9V

V

OUT

dB

90 110

dB

95 115

µV/ °C

RL=1kΩ to VCC/2 20 50

Output Voltage Swing from Rail VOL/V

OH

mV

RL=10kΩ to VCC/2 3 15

Sink I

Output Current

Source I

Closed-loop Output Impedance Z

Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V

Supply Current (Per Amplifier) ICC V

V

SINK

SOURCE

OUT

OUT=VCC

V

OUT

f=10kHz 9 Ω

OUT=VCC

50 60

=0V 50 65

66 80 dB

/2, I

=0 70 90 µA

OUT

mA

3.0V AC Electrical Characteristics

V

=3.0V, VEE=0, V

CC

OUT=VCC

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

Parameter Symbol Conditions Min Typ Max Unit

Gain Bandwidth Product GBP RL=100kΩ 1.0 MHz

Slew Rate (Note 2) SR

Phase Margin φM RL=100kΩ 67 Degrees

Total Harmonic Distortion+Noise THD+N

Voltage Noise Density en f=1kHz 27

Note 2: Number specified is the positive slew rate.

G=1, 2V Step,

=100pF, RL=10kΩ

C

L

f=1kHz, G=1, V

=10kΩ, CL=100pF

R

L

=1Vpp

IN

0.40 V/µs

-70 dB

HznV/

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

8

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

5.0V DC Electrical Characteristics

=5.0V, VEE=0, V

V

CC

OUT=VCC

Parameter Symbol Conditions Min Typ Max Unit

Input Offset Voltage VOS 0.5 2.5 mV

Input Bias Current IB 1.0 pA

Input Offset Current IOS 1.0 pA

Input Common-mode Voltage Range VCM -0.3 5.3 V

Common-mode Rejection Ratio CMRR

Large Signal Voltage Gain GV

Input Offset Voltage Drift ∆VOS/∆T 2.0

/2, VCM=VCC/2, T

=25°C, unless otherwise noted.

A

V

=-0.3V to 3.8V 70 85

CM

VCM=-0.3V to 5.3V 65 90

R

=1kΩ to VCC/2,

L

=0.2V to 4.8V

V

OUT

RL=10kΩ to VCC/2,

=0.05V to 4.95V

V

OUT

80 92

85 98

dB

dB

µV/°C

RL=1kΩ to VCC/2 25 50

Output Voltage Swing from Rail VOL/V

OH

mV

RL=10kΩ to VCC/2 4 15

Sink I

Output Current

Source I

SINK

SOURCE

V

OUT=VCC

V

OUT

100 150

mA

=0V 110 185

Closed-loop Output Impedance f=1kHz, AV=1 9 Ω

Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V

Supply Current (Per Amplifier) ICC V

OUT=VCC

/2, I

OUT

=0 70 90 µA

66 80 dB

5V AC Electrical Characteristics

VCC=5.0V, VEE=0, V

OUT=VCC

Parameter Symbol Conditions Min Typ Max Unit

Gain Bandwidth Product GBP RL=100kΩ 1.0 MHz

Slew Rate (Note 2) SR

Phase Margin φM RL=100kΩ 67 Degrees

THD+N THD+N

Voltage Noise Density en f=1kHz 27

Note 2: Number specified is the positive slew rate.

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

/2, VCM=VCC/2, TA=25°C, unless otherwise noted.

2V Step,

=100pF, RL=10kΩ

C

L

f=1kHz, A

=10kΩ,CL=100pF

R

L

=1, VIN=1VPP

V

9

0.45 V/µs

-70 dB

HznV/

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics

260

240

220

200

180

160

140

Supply Current (µA)

120

100

80

-40-20 0 20406080100120

1

0

-1

-2

-3

-4

Input Offset Voltage (mV)

-5

-6

-0.5 0.0 0.5 1.0 1.5 2.0

No Load
V

=1/2V

OUT

CC

VCC=1.8V
VCC=1.6V

Temperature (OC)

Dual Amplifiers

VCC=5.0V
VCC=3.0V

Figure 4. Supply Current vs. Temperature Figure 5. Supply Current vs. Supply Voltage

VCC=1.6V

TA=-40oC

TA=25oC

Input Common Mode Voltage (V)

TA=85oC

Figure 6. Input Offset Voltage vs. Figure 7. Input Offset Voltage vs.

Input Common Mode Voltage Input Common Mode Voltage

250

200

150

100

Supply Current (µA)

TA=25OC

TA=-40OC

TA=85OC

50

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Supply Voltage (V)

1

VCC=1.8V

0

-1

-2

-3

-4

Input Offset Voltage (mV)

-5

-6

-0.5 0.0 0.5 1.0 1.5 2.0 2.5

Input Common Mode Voltage (V)

AZV831/2

Dual Amplifiers

/2

V

OUT=VCC

=0mA

I

OUT

TA=-40oC

TA=25oC

TA=85oC

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

10

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

1

Input Offset Voltage (mV)

VCC=3.0V

0

-1

-2

-3

-4

-5

-6
01234

Input Common Mode Voltage (V)

TA=-40oC

TA=25oC

TA=85oC

Figure 8. Input Offset Voltage vs. Figure 9. Input Offset Voltage vs.

Input Common Mode Voltage Input Common Mode Voltage

1000

VCC=1.6V, VEE=0V

100

10

Output Voltage to Supply Rail (mV)

1

0.1 1 10

Output Current (mA)

Sink Current
Source Current

Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Output Current

4

VCC=5.0V

2

0

-2

-4

Input Offset Voltage (mV)

-6
0123456

Input Common Mode Voltage (V)

TA=-40oC

TA=25oC

TA=85oC

1000

VCC=1.8V, VEE=0V

100

10

Sink Current

Output Voltage to Supply Rail (mV)

1

0.1 1 10

Output Current (mA)

Source Current

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

11

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

1000

VCC=3.0V, VEE=0V

10000

VCC=5.0V, VEE=0V

1000

100

100

10

Output Voltage to Supply Rail (mV)

1

0.01 0.1 1 10

Output Current (mA)

Sink Current
Source Current

10

Output Voltage to Supply Rail (mV)

1

0.01 0.1 1 10 100

Output Current (mA)

Sink Current
Source Current

Figure 12. Output Voltage vs. Output Current Figure 13. Output Voltage vs. Output Current

160

VEE=0V

140

120

100

80

60

40

20

Output Short Circuit Current (Sink) (mA)

short to V

V

OUT

0

-40-200 20406080100

CC

Temperature (oC)

VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V

Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature

200

VEE=0V

180

V

short to V

OUT

160

140

120

100

80

60

40

20

Output Short Circuit Current (Source) (mA)

0

-40-200 20406080100

EE

VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V

Temperature (oC)

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

12

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

120

100

VEE=0V

short to V

V

OUT

80

60

CC

160

140

120

100

VEE=0V

short to V

V

OUT

80

EE

40

20

Output Short Circuit Current (Sink) (mA)

0

12345

Figure 16. Output Short Circuit Current Figure 17. Output Short Circuit Current

vs. Supply Voltage vs. Supply Voltage

4.0

3.5

RL=10kΩ

3.0

2.5

2.0

Output Voltage to Supply Rail (mV)

1.5

0.81.01.21.41.61.82.02.22.42.6

Figure 18. Output Voltage Swing vs. Supply Voltage Figure 19. Output Voltage Swing vs. Supply Voltage

Supply Voltage (V)

Positive Swing
Negative Swing

Dual Supply Voltage (V)

60

40

20

Output Short Circuit Current (Source) (mA)

0

12345

Supply Voltage (V)

27

26

25

24

23

22

21

Output Voltage to Supply Rail (mV)

20

0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

RL=1kΩ

Positive Swing
Negative Swing

Dual Supply Voltage (V)

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

13

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

48

44

40

36

32

Positive Swing

28

24

20

16

Output Voltage to Supply Rail (mV)

12

-40-20 0 20406080100

RL=1kΩ

Temperature (oC)

VCC=0.8V,VEE=-0.8V
VCC=2.5V,VEE=-2.5V
VCC=0.8V,VEE=-0.8V
VCC=2.5V,VEE=-2.5V

Negative Swing

10

9

8

7

6

5

4

3

2

1

Output Voltage to Supply Rail (mV)

0

-40 -20 0 20 40 60 80 100

RL=10kΩ

Negative Swing

Temperature (oC)

VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V

Positive Swing

Figure 20. Output Voltage Swing vs. Temperature Figure 21. Output Voltage Swing vs. Temperature

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω

VCC=0.8V, VEE=-0.8V

10k 100k 1M

Frequency (Hz)

Figure 22. Gain and Phase vs. Frequency Figure 23. Gain and Phase vs. Frequency

with Resistive Load with Capacitive Load

100

90

80

70

60

50

40

30

20

10

Phase Margin (Degree)

70

60

50

40

30

20

10

Open Loop Gain (dB)

-10

-20

CL=100pF
CL=200pF

0

CL=300pF

VCC=0.8V, VEE=-0.8V
R

=100kΩ

L

10k 100k 1M

Frequency (Hz)

100

90

80

70

60

50

40

30

20

10

Phase Margin (Degree)

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

14

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

CL=100pF
CL=200pF
CL=300pF

VCC=0.8V, VEE=-0.8V
R

=10kΩ

L

10k 100k 1M

Frequency (Hz)

Figure 24. Gain and Phase vs. Frequency Figure 25. Gain and Phase vs. Frequency

with Capacitive Load with Resistive Load

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

CL=100pF
CL=200pF

CL=300pF
VCC=0.9V, VEE=-0.9V
R

=100kΩ

L

10k 100k 1M

Frequency (Hz)

Figure 26. Gain and Phase vs. Frequency Figure 27. Gain and Phase vs. Frequency

with Capacitive Load with Capacitive Load

100

90

80

70

60

50

40

30

20

10

100

90

80

70

60

50

40

30

20

10

Phase Margin (Degree)

Phase Margin (Degree)

Open Loop Gain (dB)

-10

-20

70

60

50

40

30

20

10

0

Open Loop Gain (dB)

-10

-20

RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω

VCC=0.9V, VEE=-0.9V

10k 100k 1M

Frequency (Hz)

70

60

50

40

30

20

10

0

CL=100pF
CL=200pF
CL=300pF

VCC=0.9V, VEE=-0.9V
R

=10kΩ

L

10k 100k 1M

Frequency (Hz)

100

90

80

70

60

50

40

30

20

10

100

90

80

70

60

50

40

30

20

10

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

15

Phase Margin (Degree)

Phase Margin (Degree)

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

70

60

50

40

30

20

Open Loop Gain (dB)

-10

-20

10

0

RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω

VCC=1.5V, VEE=-1.5V

10k 100k 1M

Frequency (Hz)

Figure 28. Gain and Phase vs. Frequency Figure 29. Gain and Phase vs. Frequency

with Resistive Load with Capacitive Load

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

CL=100pF

CL=200pF

CL=300pF

VCC=1.5V, VEE=-1.5V
R

=10kΩ

L

10k 100k 1M

Frequency (Hz)

Figure 30. Gain and Phase vs. Frequency Figure 31. Gain and Phase vs. Frequency

with Capacitive Load with Resistive Load

100

90

80

70

60

50

40

30

20

10

100

90

80

70

60

50

40

30

20

10

Phase Margin (Degree)

Phase Margin (Degree)

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

CL=100pF
CL=200pF
CL=300pF

VCC=1.5V, VEE=-1.5V
R

=100kΩ

L

10k 100k 1M

Frequency (Hz)

RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω

VCC=2.5V, VEE=-2.5V

10k 100k 1M

Frequency (Hz)

100

90

80

70

60

50

40

30

20

10

100

90

80

70

60

50

40

30

20

10

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

16

Phase Margin (Degree)

Phase Margin (Degree)

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

70

60

50

40

30

20

10

Open Loop Gain (dB)

0

-10

-20

CL=100pF
CL=200pF
CL=300pF

VCC=2.5V, VEE=-2.5V
R

=100kΩ

L

10k 100k 1M

Frequency (Hz)

Figure 32. Gain and Phase vs. Frequency Figure 33. Gain and Phase vs. Frequency

with Capacitive Load with Capacitive Load

1000

100

VCC=1.6V to 5V
V

=0V

EE

10

Output Impedance (Ω)

1

100 1k 10k 100k

Frequency (Hz)

Figure 34. Output Impedance vs. Frequency Figure 35. THD+N vs. Output Voltage

AV=1
AV=10
AV=100

100

90

80

70

60

50

40

30

20

10

Phase Margin (Degree)

70

60

50

40

30

20

10

Open Loop Gain (dB)

-10

-20

0

CL=100pF
CL=200pF
CL=300pF

VCC=2.5V, VEE=-2.5V
R

=10kΩ

L

10k 100k 1M

Frequency (Hz)

10

1

0.1

THD+N (%)

0.01

1E-3

0.01 0.1 1

AV=1, RL=10kΩ, CL=100pF

VCC=0.8V,VEE=-0.8V
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
VCC=2.5V,VEE=-2.5V

Output Voltage (V)

100

90

80

70

60

50

40

30

20

10

Phase Margin (Degree)

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

17

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

1

Bandwidth<10Hz to 22kHz

0.1

VCC=0.8V, VEE=-0.8V
VCC=0.9V, VEE=-0.9V
VCC=1.5V, VEE=-1.5V
VCC=2.5V, VEE=-2.5V

VCC=5.0V, VEE=0V, AV=1

100n

THD+N (%)

0.01

1E-3

V

=100mV

OUT

100 1k 10k

Figure 36. THD+N vs. Frequency Figure 37. Input Voltage Noise Density

, AV=1, RL=10kΩ, CL=100pF

RMS

Frequency (Hz)

Input Voltage Noise (V/ Hz)

10n

100 1k 10k

Frequency (Hz)

V

IN VIN

50mV/div 50mV/div

V

=1.6V

CC

VEE=0V

=1.8V

V

CC

V

=0V

EE

V

OUT VOUT

50mV/div 50mV/div

CL=100pF, RL=100kΩ, AV=1

C

=100pF, RL=100kΩ, AV=1

L

Time (2µs/div) Time (2µs/div)

Figure 38. Small Signal Pulse Response Figure 39. Small Signal Pulse Response

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

18

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

V

IN VIN

50mV/div 50mV/div

VCC=3.0V
V

=0V

EE

V

OUT VOUT

50mV/div 50mV/div

CL=100pF, RL=100kΩ, AV=1

=100pF, RL=100kΩ, AV=1

C

L

Time (2µs/div) Time (2µs/div)

Figure 40. Small Signal Pulse Response Figure 41. Small Signal Pulse Response

V

500mV/div 500mV/div

IN VIN

VCC=1.6V

=0V

V

EE

V

OUT VOUT

500mV/div 500mV/div

C

=200pF, RL=100kΩ, AV=1

L

C

=200pF, RL=100kΩ, AV=1

L

Time (10µs/div) Time (10µs/div)

Figure 42. Large Signal Pulse Response Figure 43. Large Signal Pulse Response

AZV831/2

VCC=5.0V

=0V

V

EE

VCC=1.8V
V

=0V

EE

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

19

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

=3.0V

V

V

IN VIN

1V/div 2V/div

CC

V

=0V

EE

V

OUT VOUT

1V/div 2V/div

CL=200pF, RL=100kΩ, AV=1

C

=200pF, RL=100kΩ, AV=1

L

Time (10µs/div) Time (10µs/div)

Figure 44. Large Signal Pulse Response Figure 45. Large Signal Pulse Response

AZV831/2

=5.0V

V

CC

=0V

V

EE

V

500mV/div 500mV/div

IN VIN

V
V

=1.6V

CC

=0V

EE

V

OUT VOUT

500mV/div 500mV/div

C

=200pF, RL=10kΩ, AV=1

L

Time (10µs/div) Time (10µs/div)

Figure 46. Large Signal Pulse Response Figure 47. Large Signal Pulse Response

V

=1.8V

CC

V

=0V

EE

CL=200pF, RL=10kΩ, AV=1

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

20

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

V

IN VIN

1V/div 2V/div

VCC=3.0V

=0V

V

EE

V

OUT VOUT

1V/div 2V/div

=200pF, RL=10kΩ, AV=1

C

L

=200pF, RL=10kΩ, AV=1

C

L

Time (10µs/div) Time (10µs/div)

Figure 48. Large Signal Pulse Response Figure 49. Large Signal Pulse Response

AZV831/2

V

=5.0V

CC

V

=0V

EE

V

IN VIN

1V/div 50mV/div

V

OUT VOUT

1V/div 1V/div

V

IN

V

=2.5V

CC

=-2.5V

V

EE

V

OUT

f=1kHz, RL=10kΩ, VIN=6V

PP, AV

=1

Time (200µs/div) Time (20µs/div)

Figure 50. No Phase Reversal Figure 51. Overload Recovery Time

VCC=2.5V
V

=-2.5V

EE

C

=100pF, RL=100kΩ, AV=-50

L

V

=0 to -100mV

IN

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

21

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers

Typical Performance Characteristics (Continued)

V

50mV/div

IN

VCC=2.5V
V

=-2.5V

EE

V

OUT

1V/div

CL=100pF, RL=100kΩ, AV =-50,

=0 to -100mV

V

Time (20µs/div)

Figure 52. Overload Recovery Time

AZV831/2

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

22

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Mechanical Dimensions

SC-70-5 Unit: mm(inch)

2.150(0.085)

2.450(0.096)

2.000(0.079)

2.200(0.087)

0.150(0.006)

0.350(0.014)

0.260(0.010)

0.460(0.018)

1.150(0.045)

0°

8°

0.200(0.008)

1.350(0.053)

0.525(0.021)REF

0.650(0.026)TYP

1.200(0.047)

1.400(0.055)

0.000(0.000)

0.100(0.004)

0.080(0.003)

0.150(0.006)

0.900(0.035)

1.000(0.039)

0.900(0.035)

1.100(0.043)

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

23

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Mechanical Dimensions (Continued)

SOT-23-5 Unit: mm(inch)

2.820(0.111)

3.020(0.119)

0.100(0.004)

0.200(0.008)

)

)

4

)

)

)

4

6

0

1

1

1

.

.

0

0

(

(

0

0

5

5

6

9

.

.

2

2

)

7

9

6

5

0

0

.

.

0

0

(

(

0

0

0

0

5

7

.

.

1

1

0.200(0.008)

0

7

.

0

2

2

1

0

0

.

.

0

0

(

(

0

0
0

0

3

6

.

.

0

0

0

R

)

8

2

0

.

0

(

E

F

0.950(0.037)

Y

T

P

1.800(0.071)

2.000(0.079)

0.300(0.012)

0.400(0.016)

0°

8°

)
7
5
0

.

X

0

A

(
0

M

5
4

.
1

0

9

.

0

.

1

0

3

0

(

0

0

0

.

0

0

5

1

.

0

3

0

.

0

(

0

0

.

5

0

(

0

)

0

.

0

0

0

(

)

0

.

6

0

5

)

)

1

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

24

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Mechanical Dimensions (Continued)

SOIC-8 Unit: mm(inch)

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

25

Preliminary Datasheet

Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail

AZV831/2

Input/Output CMOS Operational Amplifiers

Mechanical Dimensions (Continued)

MSOP-8 Unit: mm(inch)

)

)

4

2

1

2

1

1

.

.

0

0

(

(

0

0

0

0

9

1

.

.

2

3

4.700(0.185)

5.100(0.201)

0.410(0.016)

0.650(0.026)

)

)

0

8

0

0

0

0

.

.

0

0

(

(

0

0

0

0

0

2

.

.

0

0

Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

26

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

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- Headquarters

BCD Semiconductor Manufacturing Limited

BCD Semiconductor Manufactur ing Limited

- Wafer Fab

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Tel: [phone], Fax: [phone]

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REGIONAL SALES OFFICE

Shenzhen Office

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Shenzhen Office

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China

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Tel: [phone]

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BCD Semiconductor Manufacturing Limited

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

- IC Design Group

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Tel: [phone], Fax: [phone]

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BCD Semiconductor (Taiwan) Company Limited

Taiwan Office

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Tai wan

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Tel: [phone]

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Fax: [phone]

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BCD Semiconductor Corp.

USA Office

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