Diodes AZ4558C User Manual

Data Sheet

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

General Description

The AZ4558C consists of two high performance
operational amplifiers. The IC features high gain, low
equivalent input noise voltage, high input resistance,
excellent channel separation, wide range of operating
voltage and internal frequency compensation.

It can work with ± 18V maximum power supply
voltage or single power supply up to 36V.

The AZ4558C is available in DIP-8 and SOIC-8 pack­ages.

Features

· Internally Frequency Compensated

· Large Signal Voltage Gain: 100dB Typical

· Gain and Phase Match between Amplifiers

· Gain Bandwidth Product (at 10kHz): 5.5MHz

· Pin to Pin Compatible with MC1458

Applications

· Audio AC-3 Decoder System

· Audio Amplifier

SOIC-8 DIP-8

Figure 1. Package Types of AZ4558C

Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

1

Data Sheet

- Input

+ Input

V

EE

Output

V

CC

1

2

3

4

8

7

6

5

1

2

3

4

8

7

6

5

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Pin Configuration

M Package

(SOIC-8)

OUTPUT 1

INPUT 1-

INPUT 1+

V

EE

Figure 2. Pin Configuration of AZ4558C (Top View)

Functional Block Diagram

V

CC

OUTPUT 2

INPUT 2-

INPUT 2+

OUTPUT 1

INPUT 1-

INPUT 1+

V

EE

P Package

(DIP-8)

V

CC

OUTPUT 2

INPUT 2-

INPUT 2+

Figure 3. Functional Block Diagram of AZ4558C (Each Amplifier)

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Data Sheet

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Ordering Information

AZ4558C -

E1: Lead Free
G1: Green

TR: Tape and Reel
Blank: Tube

Packing

Typ e

Package

SOIC-8

DIP-8

Circuit Type

Package

M: SOIC-8
P: DIP-8

Te mp er a tu re

Range

o

-40 to 85

-40 to 85

C

o

C

Part Number Marking ID

Lead Free Green Lead Free Green

AZ4558CM-E1 AZ4558CM-G1 4558CM-E1 4558CM-G1 Tube

AZ4558CMTR-E1 AZ4558CMTR-G1 4558CM-E1 4558CM-G1 Tape & Reel

AZ4558CP-E1 AZ4558CP-G1 AZ4558CP-E1 AZ4558CP-G1 Tube

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Supply Voltage

V

Input Voltage

V

Differential Input Voltage

V

Operating Junction Temperature T

Storage Temperature Range T

Lead Temperature (Soldering 10s) T

Power Dissipation P

CC

EE

V

ID

STG

L

D

I

J

DIP 800 mW

SOIC 500 mW

+20

-20

±15 V

±30 V

150

-65 to 150

260

V

o

C

o

C

o

C

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.

Recommended Operating Conditions

Parameter Min Max Unit

Supply Voltage ±2 ±18 V

Operating Temperature Range

-40

85

Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

3

o

C

Data Sheet

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Electrical Characteristics

Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC, unless otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Input Offset Voltage

Input Offset Current

Input Bias Current

Large Signal Voltage Gain

Supply Voltage Rejection Ratio SVR

Supply Current

Input Common Mode Voltage
Range

Common Mode Rejection Ratio CMRR

Output Voltage Swing

Slew Rate SR

Rise Time

Overshoot

Input Resistance

Output Resistance

V

IO

I

I

A

I

V

V

VCM=0V

IO

VCM=0V

IB

RL=2KΩ, VO=±10V

VD

≤10KΩ

R

S

All Amplifiers, No Load 2.5 4.5 mA

CC

ICM

≤10KΩ

R

S

RL≥10KΩ

O

R

≥2KΩ

L

V

=±10V, RL=2KΩ, CL=100pF, unity

I

85 100 dB

80 100 dB

±12 V

70 95 dB

±12 ±14

±10 ±13

gain

T

K

R

R

VI=±20mV, RL=2KΩ, CL=100pF, unity

R

gain

VI=±20mV, RL=2KΩ, CL=100pF, unity

OV

gain

I

O

Unity Gain Bandwidth B Gain=0dB 2.8 MHz

=±10mV, RL=2KΩ,

V

Gain Bandwidth Product GBWP

Total Harmonic Distortion Plus
Noise

THD+N

I

=100pF, f=10KHz

C

L

f=1KHz, A

=1V

V

O

=6dB, RL=10KΩ,

V

,

RMS

15mV

10 100 nA

70 400 nA

1.8 V/μs

0.3 μs

15 %

0.5 MΩ

45 Ω

5.5 MHz

0.002 %

V

Equivalent Input Noise Voltage
Density

Output Current

Thermal Resistance
(Junction to Case)

e

N

I

SINK

I

SOURCE

θ

JC

RS=100Ω, f=1KHz

V- =1 V, V+= 0V, VO=2V

V+=1V, V-= 0V, VO=2V

10

60

35

DIP-8 55

nV

----------

mA

o

C/W

Hz

SOIC-8 81

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Data Sheet

-40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0

2.0

2.2

2.4

2.6

2.8

3.0

3.2

Supply Current (mA)

Temperature (OC)

1 10 100 1k 10k 100k 1M 10M

0

20

40

60

80

100

120

Open Loop Gain (dB)

Frequency (Hz)

1 10 100 1k 10k 100k 1M

5

10

15

20

VCC=+15V, VEE=-15V,
R

L

=2kΩ, THD+N<5%

Maximum Swing Voltage (V)

Frequency (Hz)

100 1k 10k

-16

-12

-8

-4

0

4

8

12

16

Negative Voltage Swing

Output Voltage Swing (V)

Resistance Load (Ω)

Positive Voltage Swing

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Typical Performance Characteristics

Figure 4. Open Loop Voltage Gain vs. Frequency

Figure 6. Maximum Output Voltage Swing

Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

vs. Load Resistance

Figure 5. Maximum Output Voltage Swing vs. Frequency

Figure 7. Supply Current vs. Temperature

5

Data Sheet

-40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0

0

20

40

60

80

100

120

Input Bias Current (nA)

Temperature (OC)

-40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0

-2

-1

0

1

2

3

4

5

Input Offset Voltage (mV)

Temperature (OC)

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Typical Performance Characteristics (Continued)

Figure 8. Input Offset Voltage vs. Temperature

Figure 9. Input Bias Current vs. Temperature

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Data Sheet

VCC=+12V

C3

0.1μF

C6

0.1μF

GND

GND

V

OUT

V

IN

R1 20K 1%

C4

22μF/25V

GND

C5

1000pF

C2

22μF/

25V

R3

3.3K 1%

R2 10K 1%

C1

150pF

+

3 (5)

-

2 (6)

8

4

OUT

1 (7)

AZ4558C

GND

GND

R4

6.8K

VEE=-12V

R5
10K

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Typical Application

Figure 10. Typical Application of AZ4558C in Audio 2nd Order Low Pass Filter

(fO=50.6kHz, Q=0.7015, Input impedance=10K, Gain=6dB, Group delay=4.48μs)

7

Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

Data Sheet

4

°

6

°

R0.750(0.030)

0.254(0.010)TYP

0.130(0.005)MIN

8.200(0.323)

9.400(0.370)

0.204(0.008)

0.360(0.014)

7.620(0.300)TYP

4

°

6

°

5°

0.700(0.028)

9.000(0.354)

9.600(0.378)

3.710(0.146)

4.310(0.170)

3.000(0.118)

3.600(0.142)

0.360(0.014)

0.560(0.022)

2.540(0.100) TYP

6.200(0.244)

6.600(0.260)

3.200(0.126)

3.600(0.142)

0.510(0.020)MIN

Φ3.000(0.118)

Depth

0.100(0.004)

0.200(0.008)

1.524(0.060) TYP

Note: Eject hole, oriented hole and mold mark is optional.

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Mechanical Dimensions

DIP-8 Unit: mm(inch)

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8

Data Sheet

0

°

8

°

1°
5°

R

0

.

1

5

0

(

0

.

0

0

6

)

R0.150(0.006)

1.000(0.039)

0.330(0.013)

0.510(0.020)

1.350(0.053)

1.750(0.069)

0.100(0.004)

0.300(0.012)

0.900(0.035)

0.800(0.031)

0.200(0.008)

3.800(0.150)

4.000(0.157)

7

°

7

°

2

0

:

1

D

1.270(0.050)

TYP

0.190(0.007)

0.250(0.010)

8

°

D

5.800(0.228)

6.200(0.244)

0.675(0.027)

0.725(0.029)

0.320(0.013)

8

°

0.450(0.017)

0.800(0.031)

4.700(0.185)

5.100(0.201)

Note: Eject hole, oriented hole and mold mark is optional.

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C

Mechanical Dimensions (Continued)

SOIC-8 Unit: mm(inch)

φ

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9

BCD Semiconductor Manufacturing Limited

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