Diodes AZ4558C User Manual

Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C
General Description
The AZ4558C consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation.
It can work with ± 18V maximum power supply voltage or single power supply up to 36V.
The AZ4558C is available in DIP-8 and SOIC-8 pack­ages.
Features
· Internally Frequency Compensated
· Large Signal Voltage Gain: 100dB Typical
· Gain and Phase Match between Amplifiers
· Gain Bandwidth Product (at 10kHz): 5.5MHz
· Pin to Pin Compatible with MC1458
Applications
· Audio AC-3 Decoder System
· Audio Amplifier
SOIC-8 DIP-8
Figure 1. Package Types of AZ4558C
Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
- Input
+ Input
V
EE
Output
V
CC
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C
Pin Configuration
M Package
(SOIC-8)
OUTPUT 1
INPUT 1-
INPUT 1+
V
EE
Figure 2. Pin Configuration of AZ4558C (Top View)
Functional Block Diagram
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
OUTPUT 1
INPUT 1-
INPUT 1+
V
EE
P Package
(DIP-8)
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
Figure 3. Functional Block Diagram of AZ4558C (Each Amplifier)
Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C
Ordering Information
AZ4558C -
E1: Lead Free G1: Green
TR: Tape and Reel Blank: Tube
Packing
Typ e
Package
SOIC-8
DIP-8
Circuit Type
Package
M: SOIC-8 P: DIP-8
Te mp er a tu re
Range
o
-40 to 85
-40 to 85
C
o
C
Part Number Marking ID
Lead Free Green Lead Free Green
AZ4558CM-E1 AZ4558CM-G1 4558CM-E1 4558CM-G1 Tube
AZ4558CMTR-E1 AZ4558CMTR-G1 4558CM-E1 4558CM-G1 Tape & Reel
AZ4558CP-E1 AZ4558CP-G1 AZ4558CP-E1 AZ4558CP-G1 Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Supply Voltage
V
Input Voltage
V
Differential Input Voltage
V
Operating Junction Temperature T
Storage Temperature Range T
Lead Temperature (Soldering 10s) T
Power Dissipation P
CC
EE
V
ID
STG
L
D
I
J
DIP 800 mW
SOIC 500 mW
+20
-20
±15 V
±30 V
150
-65 to 150
260
V
o
C
o
C
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Min Max Unit
Supply Voltage ±2 ±18 V
Operating Temperature Range
-40
85
Jan. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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