Page 1
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Data Sheet
General Description
The AUR9718B is a high efficiency step-down
DC-DC voltage converter. The chip operation is
optimized by peak-current mode architecture with
built-in synchronous power MOSFET switchers.
The oscillator and timing capacitors are all built-in
providing an internal switching frequency of 1.5MHz
that allows the use of small surface mount inductors
and capacitors for portable product implementations.
Additional features including Soft Start (SS), Under
Voltage Lock Out (UVLO), Thermal Shutdown
Detection (TSD) and short circuit protection are
integrated to provide reliable product applications.
The device is available in adjustable output voltage
versions ranging from 0.8V to V
voltage range is from 2.7V to 5.5V, and is able to
deliver up to 2.5A.
The AUR9718B is available in DFN-3×3-6 package.
when input
IN
Features
• High Efficiency Buck Power Converter
• Low R
• Output Current: 2.5A
• Adjustable Output Voltage from
• Wide Operating Voltage Range: 2.7V to 5.5V
•
4Built-in Power Switchers for Synchronous
Rectification with High Efficiency
• Feedback Voltage Allows Output: 800mV
• 1.5MHz Switching Frequency
• Thermal Shutdown Protection
• Low Drop-out Operation at 100% Duty Cycle
• No Schottky Diode Required
• Input Over Voltage Protection
Internal Switches : 100mΩ
DS(ON)
0.8V to VIN
Applications
• LCD TV
• Set Top Box
• Post DC-DC Voltage Regulation
• PDA and Notebook Computer
DFN-3×3-6
Figure 1. Package Type of AUR9718B
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
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Page 2
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Pin Configuration
D Package
(DFN-3×3-6)
Pin 1 Mark
1
2
Figure 2. Pin Configuration of AUR9718B (Top View)
Exposed
Pad
6
5
43
Pin Description
Pin Number Pin Name Function
1 FB Output voltage feedback pin
2 GND Ground pin
3 SW Switch output pin
4 VIN_SW Power supply input for the MOSFET switch
5 VIN_A Supply input for the analog circuit
6 EN Enable pin, active high
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
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Page 3
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Functional Block Diagram
-
+
VIN_SW
4
3
2
GND
SW
FB
1
EN
6
Bias
Generator
Soft
Start
Bandgap
Reference
VIN_A
Saw-tooth
Generator
Oscillator
Over Current
Comparator
+
Buffer &
Dead Time
-
+
Error
Amplifier
+
-
Modulator
-
+
Over Voltage
Comparator
Figure 3. Functional Block Diagram of AUR9718B
Control
Logic
Reverse Inductor
Current Comparator
5
Current
Sensing
Control
Logic
Ordering Information
AUR9718B
Circuit Type
Package
DFN-3×3-6 -40 to 80°C AUR9718BGD 9718B Tape & Reel
Temperature
Range
Part Number Marking ID Packing Type
BCD Semiconductor's Pb-free products, as designated with "G" in the part number, are RoHS compliant and
green.
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
3
Package
D: DFN-3×3-6
G: Green
Page 4
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Supply Input Voltage ( pin VIN_SW) V
Supply Input Voltage ( pin VIN_A) V
SW Pin Switch Voltage VSW -0.3 to V
Enable Voltage VEN -0.3 to V
SW Pin Switch Current ISW 3.5 A
Power Dissipation (On PCB, TA=25°C) PD
Thermal Resistance (Junction to Ambient, Simulation) θJA
Operating Junction Temperature TJ
Operating Temperature TOP
Storage Temperature T
ESD (Human Body Model) V
ESD (Machine Model) VMM
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
IN_SW
IN_A
STG
HBM
0 to 6.5
0 to 6.5
IN_SW
IN_A
2.49
40.11
150
-40 to 85
-55 to 150
2000
200
+0.3 V
+0.3 V
V
V
W
°C/W
°C
°C
°C
V
V
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Input Voltage VIN 2.7 5.5 V
Junction Temperature Range TJ -40 125 °C
Ambient Temperature Range TA -40 80 °C
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Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Electrical Characteristics
V
IN_SW=VIN_A=VEN
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Input Voltage Range VIN 2.7 5.5 V
=5V, V
=1.2V, VFB=0.8V, L=3.3µH, CIN=4.7µF, C
OUT
=22µF, TA=25°C, unless
OUT
Shutdown Current I
Active Current ION V
Regulated Feedback
Voltage
Regulated Output
Voltage Accuracy
∆V
Peak Inductor
Current
Oscillator Frequency f
PMOSFET RON R
NMOSFET RON R
EN High-level Input
Voltage
EN Low-level Input
Voltage
V
OFF
For Adjustable Output Voltage 0.784 0.8 0.816 V
V
FB
OUT/VOUT
I
OSC
ON(P)
ON(N)
V
EN_H
V
EN_L
3.0 3.5 A
PK
1.2 1.5 1.8 MHz
ISW=0.75A 100 mΩ
ISW=0.75A 100 mΩ
1.5 V
0.4 V
=0V 1 µA
EN
=0.95V 310 µA
FB
=2.7V to 5.5V, I
V
IN
to 2.5A
OUT
=10mA
-3 3 %
EN Input Current IEN 1 µA
Soft-start time tSS 400 µS
Maximum Duty
Cycle
Under Voltage Lock
Out
100 %
D
MAX
Rising 2.4
V
UVLO
Falling 2.3
V
Hysteresis Hysteresis 0.1 V
OVP Threshold V
5.8 5.9 6.0 V
OVP
Hysteresis on OVP 300 400 500 mV
Thermal Shutdown TSD Hysteresis=30°C 150 °C
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Page 6
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics
100
90
80
70
60
50
Efficiency (%)
40
30
20
10
0
VIN=5V, V
0.00.51.01.52.02.5
OUT
=3.3V
Output Current (A)
Figure 4. Efficiency vs. Output Current Figure 5. Efficiency vs. Output Current
100
90
80
70
60
50
40
Efficiency (%)
30
20
10
VIN=5V, V
0
0.0 0.5 1.0 1.5 2.0 2.5
OUT
=1.2V
Output Current (A)
100
90
80
70
60
50
40
Efficiency (%)
30
20
10
0
VIN=5V, V
0.0 0.5 1.0 1.5 2.0 2.5
OUT
=1.0V
Output Current (A)
Figure 6. Efficiency vs. Output Current Figure 7. 3.3V Load Regulation
3.40
3.38
3.36
3.34
3.32
3.30
3.28
Output Voltage (V)
3.26
3.24
3.22
3.20
VIN=5V, V
0.0 0.5 1.0 1.5 2.0 2.5
OUT
=3.3V
Output Current (A)
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Page 7
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics (Continued)
1.30
1.28
1.26
1.24
1.22
1.20
1.18
Output Voltage (V)
1.16
1.14
1.12
1.10
VIN=5V, V
0.0 0.5 1.0 1.5 2.0 2.5
OUT
=1.2V
Output Current (A)
1.10
1.08
1.06
1.04
1.02
1.00
0.98
Output Voltage (V)
0.96
0.94
0.92
0.90
VIN=5V, V
0.00.51.01.52.02.5
=1V
OUT
Output Current (A)
Figure 8. 1.2V Load Regulation
Figure 9. 1.0V Load Regulation
3.40
3.38
3.36
3.34
3.32
3.30
3.28
Output Voltage (V)
3.26
3.24
3.22
3.20
3.5 4.0 4.5 5.0 5.5
I
=1.5A
OUT
Input Voltage (V)
1.30
1.28
1.26
1.24
1.22
1.20
1.18
Output Voltage (V)
1.16
1.14
1.12
1.10
I
=1.5A
OUT
3.03.54.04.55.05.5
Input Voltage (V)
Figure 10. 3.3V Line Regulation Figure 11. 1.2V Line Regulation
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Page 8
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics (Continued)
1.10
1.08
1.06
1.04
1.02
1.00
0.98
Output Voltage (V)
0.96
0.94
0.92
0.90
I
=1.5A
OUT
3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
EN Threshold (V)
0.7
0.6
0.5
0.4
0.3
3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
Rising
Falling
Figure 12. 1.0V Line Regulation
Figure 13. EN Threshold vs. Input Voltage
0.820
0.815
0.810
0.805
0.800
0.795
Reference Voltage (V)
0.790
0.785
0.780
V
=3.3V
OUT
0.0 0.5 1.0 1.5 2.0 2.5
Output Current (A)
60
55
50
C)
o
45
40
35
Temperature (
30
25
20
0.0 0.5 1.0 1.5 2.0 2.5
V
=3.3V
OUT
Output Current (A)
Figure 14. Reference Voltage vs. Output Current Figure 15. Temperature vs. Output Current
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
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Page 9
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics (Continued)
VIN
2V/div
V
SW
2V/div
V
2V/div
VSW
2V/div
IN
V
V
OUT
20mV/div
I
OUT
500mA/div
OUT
20mV/div
I
OUT
500mA/div
Time 800ns/div
Time 800ns/div
Figure 16. V
(VIN=5V, V
OUT
Ripple Figure 17. V
OUT
=3.3V, I
=500mA) (VIN=5V, V
OUT
OUT
OUT
=3.3V, I
Ripple
=1000mA)
OUT
V
VIN
2V/div
V
SW
2V/div
V
OUT
20mV/div
I
OUT
2A/div
2V/div
V
2V/div
V
OUT
2V/div
I
OUT
1A/div
IN
SW
Time 1µs/div
Figure 18. V
(I
=2500mA) (I
OUT
Time 200µs/div
Ripple Figure 19. Dynamic Mode
OUT
=500mA to 2500mA)
OUT
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Page 10
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics (Continued)
2V/div
VIN
V
2V/div
IN
2V/div
VSW
V
SW
2V/div
V
2V/div
1A/div
I
OUT
OUT
V
OUT
2V/div
I
OUT
1A/div
Time 40µs/div
Time 40µs/div
Figure 20. Dynamic Mode (Rising) Figure 21. Dynamic Mode (Falling)
VEN
2V/div
V
1V/div
IN
V
2V/div
V
1V/div
EN
IN
I
OUT
1A/div
V
OUT
1V/div
I
OUT
1A/div
V
OUT
1V/div
Time 200µs/div
Figure 22. EN Pin L to H Figure 23. EN Pin L to H
(VIN=5V, V
OUT
=3.3V, I
=100mA) (VIN=5V, V
OUT
Time 200µs/div
=3.3V, I
OUT
OUT
=1000mA)
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Page 11
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics (Continued)
2V/div
1V/div
I
1A/div
V
1V/div
VEN
VIN
OUT
OUT
V
SW
2V/div
V
1V/div
I
OUT
1A/div
V
OUT
1V/div
IN
Time 200µs/div
Time 200µs/div
Figure 24. EN Pin H to L Figure 25. Soft Start Function
(VIN=5V, V
OUT
=3.3V, I
=1A) (VIN=5V, V
OUT
OUT
=3.3V, I
OUT
=0A)
VSW
2V/div
VIN
1V/div
I
OUT
1A/div
V
OUT
1V/div
I
OUT
200mA/div
V
1V/div
V
OUT
1V/div
IN
Time 400µs/div
Figure 26. Soft Start Function Figure 27. OTP Function
(VIN=5V, V
OUT
=3.3V, I
=1A)
OUT
Time 100µs/div
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Page 12
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Performance Characteristics (Continued)
VIN
1V/div
I
OUT
500mA/div
V
OUT
1V/div
V
1V/div
I
OUT
500mA/div
V
OUT
1V/div
IN
Time 100µs/div
Time 100µs/div
Figure 28. OVP Function Figure 29. Leave OVP Function
(VIN=5V to 6V) (V
=6V to 5V)
IN
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Page 13
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Application Information
The basic AUR9718B application circuit is shown in
Figure 34.
1. Inductor Selection
For most applications, the value of inductor is chosen
based on the required ripple current with the range of
1.0µH to 6.8µH.
I −
1
=∆
V
OUTL
Lf
×
The largest ripple current occurs at the highest input
voltage. Having a small ripple current reduces the ESR
loss in the output capacitor and improves the efficiency.
The highest efficiency is realized at low operating
frequency with small ripple current. However, larger
value inductors will be required. A reasonable starting
point for ripple current setting is △I
maximum ripple current stays below a specified
value, the inductor should be chosen according to the
following equation:
V
[
=
L
OUT
MAXIf
∆×
L
The DC current rating of the inductor should be at
least equal to the maximum output current plus half
the highest ripple current to prevent inductor core
saturation. For better efficiency, a lower
DC-resistance inductor should be selected.
2. Capacitor Selection
The input capacitance, CIN, is needed to filter the
trapezoidal current at the source of the top MOSFET.
To prevent large ripple voltage, a low ESR input
capacitor sized for the maximum RMS current must
be used. The maximum RMS capacitor current is
given by:
It indicates a maximum value at V
I
RMS=IOUT
commonly used for design because even significant
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
II
×=
OMAXRMS
/2. This simple worse-case condition is
V
OUT
)1(
V
IN
=40%I
L
V
1][
−
)(
V
OUT
MAXV
IN
VVV
)]([ −
OUTINOUT
IN
=2V
IN
1
2
MAX
]
)(
OUT
. For a
, where
deviations do not much relieve. The selection of C
is determined by the Effective Series Resistance
(ESR) that is required to minimize output voltage
ripple and load step transients, as well as the amount
of bulk capacitor that is necessary to ensure that the
control loop is stable. The output ripple, △V
determined by:
[
ESRIV
LOUT
+∆≤∆
1
8
××
]
Cf
OUT
The output ripple is the highest at the maximum input
voltage since △I
increases with input voltage.
L
3. Load Transient
A switching regulator typically takes several cycles to
respond to the load current step. When a load step
occurs, V
to △I
resistance of output capacitor. △I
charge or discharge C
signal used by the regulator to return V
immediately shifts by an amount equal
OUT
×ESR, where ESR is the effective series
LOAD
also begins to
LOAD
generating a feedback error
OUT
OUT
steady-state value. During the recovery time, V
can be monitored for overshoot or ringing that would
indicate a stability problem.
4. Output Voltage Setting
The output voltage of AUR9718B can be adjusted by a
resistive divider according to the following formula:
OUT
VV
REF
R
1
R
2
V
The resistive divider senses the fraction of the output
voltage as shown in Figure 30.
FB
AUR9718B
GND
VOUT
R1
R2
Figure 30. Setting the Output Voltage
13
R
1
+×=+×=
R
2
OUT
, is
OUT
to its
OUT
)1(8.0)1(
Page 14
+×=
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Application Information (Continued)
the V
and this effect will be more serious at higher
5. Short Circuit Protection
When AUR9718B output node is shorted to GND, as
V
drops under 0.4V, the chip will enter soft-start to
FB
protect itself; when short circuit is removed, and V
FB
rises over 0.4V, the chip will enter normal operation
again. If AUR9718B reaches OCP threshold while
short circuit, it will enter soft-start cycle and last until
the current drops under OCP threshold.
6.
Efficiency Considerations
The efficiency of switching regulator is equal to the
output power divided by the input power times 100%.
It is usually useful to analyze the individual losses to
determine what is limiting efficiency and which
change could produce the largest improvement.
Efficiency can be expressed as:
Efficiency=100%-L1-L2-…..
Where L1, L2, etc. are the individual losses as a
percentage of input power.
Although all dissipative elements in the regulator
produce losses, two major sources usually account for
most of the power losses: V
2
I
R losses. The VIN quiescent current loss dominates
the efficiency loss at very light load currents and the
2
R loss dominates the efficiency loss at medium to
I
heavy load currents.
6.1 The V
quiescent current loss comprises two
IN
parts: the DC bias current as given in the electrical
characteristics and the internal MOSFET switch gate
charge currents. The gate charge current results from
switching the gate capacitance of the internal power
MOSFET switches. Each cycle the gate is switched
from high to low, then to high again, and the packet
of charge, dQ moves from V
resulting dQ/dt is the current out of V
typically larger than the internal DC bias current. In
continuous mode,
QQfI +×=
Where Q
and QN are the gate charge of power
P
PMOSFET and NMOSFET switches. Both the DC
bias current and gate charge losses are proportional to
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
quiescent current and
IN
to ground. The
IN
)(
NPGATE
that is
IN
14
IN
input voltages.
2
6.2 I
R losses are calculated from internal switch
resistance, R
and external inductor resistance RL.
SW
In continuous mode, the average output current
flowing through the inductor is chopped between
power PMOSFET switch and NMOSFET switch.
Then, the series resistance looking into the SW pin is
a function of both PMOSFET R
NMOSFET R
DS(ON)N
resistance and the duty cycle
DS(ON)P
and
(D):
Therefore, to obtain the I
R
and multiply the result by the square of the
L
() ()
2
R losses, simply add RSW to
NONDSPONDSSW
)(
DRDRR
−×
1
average output current.
Other losses including C
and C
IN
ESR dissipative
OUT
losses and inductor core losses generally account for
less than 2% of total additional loss.
7. Thermal Characteristics
In most applications, the part does not dissipate much
heat due to its high efficiency. However, in some
conditions when the part is operating in high ambient
temperature with high R
resistance and high
DS(ON)
duty cycles, such as in LDO mode, the heat
dissipated may exceed the maximum junction
temperature. To avoid the part from exceeding
maximum junction temperature, the user should do
some thermal analysis. The maximum power
dissipation depends on the layout of PCB, the thermal
resistance of IC package, the rate of surrounding
airflow and the temperature difference between
junction and ambient.
8. Input Over Voltage Protection
When the input voltage of AUR9718B exceeds V
the IC would enter the mode of Input Over Voltage
Protection. It will be shutdown and there will be no
output voltage. As the input voltage goes down below
5.5V, the IC would leave input OVP mode and the
output voltage will be recovered.
OVP
9. PC Board Layout Considerations
When laying out the printed circuit board, the
following checklist should be used to optimize the
,
Page 15
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Application Information (Continued)
performance of AUR9718B.
1. The power traces, including the GND trace, the SW
trace and the VIN trace should be kept direct, short and
wide.
2. Put the input capacitor as close as possible to the
VIN_SW, VIN_A and GND pins.
3. The FB pin should be connected directly to the
feedback resistor divider.
4. Keep the switching node SW away from the
sensitive FB pin and the node should be kept small
area.
The following is an example of 2-layer PCB layout as
shown in Figure 32 and Figure 33 for reference.
Figure 31. The Evaluation Board Schematic
Figure 32. Top Layer for Demo Board
Figure 33. Bottom Layer for Demo Board
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
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Page 16
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Typical Application
V
=
2.7 to 5.5V
IN
C
IN
4.7
10V X7R
F
Note 2:
2
6
3
GND
EN
SW
FB
VIN_A
VIN_SW
1
5
4
R2 10K 1%
R1
5K 1%
AUR9718B
L: 3.3
R
VV
FBOUT
1
)1(
+×=
R
2
Figure 34. Typical Application Circuit of AUR9718B (Note 2)
H
3A
C
22
OUT
10V X7R
F
=1.2V
V
OUT
Table 1. Component Guide
V
(V)
OUT
3.3 31.25 10 3.3
2.5 21.5 10 3.3
R1 (kΩ) R2 (kΩ) L (µH)
1.8 12.5 10 3.3
1.2 5 10 3.3
1.0 3 10 3.3
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Page 17
Data Sheet
1.5MHz, 2.5A, Step-down DC-DC Converter AUR9718B
Mechanical Dimensions
DFN-3×3-6 Unit: mm(inch)
Nov. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
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Page 18
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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BCD Semiconductor Manufactur ing Limited
- Wafer Fab
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Shanghai SIM-BCD Semiconductor Manufacturing Limited
Tel: +86-21-24162266, Fax: +86-21-24162277
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
REGIONAL SALES OFFICE
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Tel: +86-755-8826 7951
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Fax: +86-755-8826 7865
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
- IC Design Group
800 Yi Shan Road, Shanghai 200233, China
Advanced Analog Circuits (Shanghai) Corporation
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
Taiwan Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
BCD Semiconductor (Taiwan) Company Limited
Tai wan
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel: +886-2-2656 2808
Taiwan
Fax: +886-2-2656 2806
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988
Fax: +1-510-324-2788
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