Diodes AS331 User Manual

Page 1
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
General Description
The AS331 consists of a single precision voltage com­parator with a typical input offset voltage of 1.0mV and high voltage gain. It is specifically designed to operate from a single power supply over wide range of voltages. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage.
The AS331 is available in standard SOT-23-5 package.
Features
· Wide Supply Voltage Range
- Single Supply: 2V to 36V
- Dual Supplies: ±1V to ±18V
· Low Supply Current at V
· Low Input Bias Current: 25nA (Typical)
· Low Input Offset Current:5nA (Typical)
· Low Input Offset Voltage: 1mV (Typical)
· Input Common Mode Voltage Range Includes
Ground
· Differential Input Voltage Range Equals to the
Power Supply Voltage
· Low Output Saturation Voltage at 4mA: 200mV
(Typical)
· Open Collector Output
=5V: 0.4mA
CC
Applications
· Battery Charger
· Cordless Telephone
· Switching Power Supply
· DC-DC Module
· PC Motherboard
· Communication Equipment
SOT-23-5
Figure 1. Package Type of AS331
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
1
Page 2
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Pin Configuration
K Package
(SOT-23-5)
INPUT-
INPUT+
Figure 2. Pin Configuration of AS331 (Top View)
Functional Block Diagram
GND
1
5
VCC
2
34
VCC
5
OUTPUT
INPUT+
INPUT-
GND
3
Q1
1
2
Q2 Q3
Q5
Q6
Q4
Q7
Q8
4
OUTPUT
Figure 3. Functional Block Diagram of AS331
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
2
Page 3
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Ordering Information
AS331 -
E1: Lead Free
Circuit Type
G1: Green
Package
TR: Tape and Reel
K: SOT-23-5
Package
SOT-23-5
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green package.
Temperature
Range
-40 to 85
o
C
Lead Free Green Lead Free Green
AS331KTR-E1 AS331KTR-G1 EEA GEA Tape & Reel
Part Number Marking ID
Packing
Typ e
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Supply Voltage
Differential Input Voltage
Input Voltage
Input Current (V
Output Short-circuit Current to Ground Continuous
<-0.3V) (Note 2) I
IN
V
CC
V
ID
V
IN
IN
40 V
40 V
-0.3 to 40 V
50 mA
Power Dissipation (T
Operating Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10sec)
=25oC)
A
T
T
LEAD
P
T
STG
D
J
620 mW
150
-65 to 150
260
o
C
o
C
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max­imum Ratings" for extended periods may affect device reliability. Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3V (at
o
25
C).
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
3
Page 4
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage
Operating Ambient Temperature Range
V
CC
T
A
236V
-40 85
o
C
Electrical Characteristics
VCC=5V, GND=0V, TA=25oC, unless otherwise specified. Bold typeface applies over TA=-40 to 85oC (Note 3)
Parameter Symbol Conditions Min Typ Max Unit
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common Mode Voltage Range (Note 4)
Supply Current
Voltage Gain
Large Signal Response Time
Response Time
Output Sink Current
Output Leakage Current
Saturation Voltage
V
OS
I
B
I
IO
I
CC
G
V
I
SINKVIN
I
LEAK
V
SAT
V
=1.4V, VCC=5 to 30V
OUT
IIN+ or IIN- with output in linear range,
=0V
V
CM
IIN+-IIN-, VCM=0V
V
=30V
CC
=5V 0.4 1.0
V
CC
RL=∞
=30V 0.5 1.7
V
CC
VCC=15V, RL≥15kΩ, V
V
=TTL Logic Swing, RL=5.1k
IN
=5.1k
R
L
-=1V, VIN+=0V, V
VIN-=0V, VIN+=1V, V
V
-=0V, VIN+=1V, V
IN
VIN-=1V, VIN+=0V, I
OUT
OUT
OUT
OUT
SINK
=1 to 11V
=1.5V
=5V
=30V
4mA
0
50 200 V/mV
2 0 0 n s
6.0 16 mA
15
7.0
mV
25 250
400
550
200
VCC-1.5
2.0
mA
3.0
1.3 µs
0.1 nA
1 µA
200 400
500
mV
nA
nA
V
Note 3: These specifications are limited to -40oC≤T
o
85
C. Limits over temperature are guaranteed by design, but
A
not tested in production. Note 4: The input common mode voltage of either input signal voltage should not be allowed to go negatively by
more than 0.3V (at 25
o
C). The upper end of the common mode voltage range is V
CC
both inputs can go to +36V without damages, independent of the magnitude of the V
-1.5V (at 25 .
CC
o
C), but either or
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
4
Page 5
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Typical Performance Characteristics
0.6
0.5
0.4
0.3
0.2
Supply Current (mA)
0.1
TC=-40oC
TC=25oC
TC=85oC
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Supply Voltage (V)
Figure 4. Supply Current vs. Supply Voltage
1.1
1.0
0.9
RL=5.1K
VCC=5V
VCC=30V
0.60
0.55
VCC=5V
VCC=30V
0.50
0.45
0.40
0.35
Supply Current (mA)
0.30
0.25
0.20
-40-200 20406080100120
Case Temperature (oC)
Figure 5. Supply Current vs. Case Temperature
350
VCC=5V
I
=4mA
300
SINK
0.8
0.7
0.6
Input Offset Voltage (mV)
0.5
0.4
-40-20 0 20406080100120
Case Temperature (oC)
250
200
Saturation Voltage (mV)
150
100
-40-20 0 20406080100120
Case Temperature (oC)
Figure 7. Saturation Voltage vs. Case TemperatureFigure 6. Input Offset Voltage vs. Case Temperature
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
5
Page 6
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Typical Performance Characteristics (Continued)
6
VCC=5V
5
TC=25oC
4
3
2
Saturation Voltage (V)
1
0
0 2 4 6 8 10 12 14 16 18 20 22
Output Sink Current (mA)
Figure 8. Saturation Voltage vs. Output Sink Current
900
VCC=5V,GND=0V, RL=5.1K
Input Overdrive Voltage=100mV
800
700
600
500
Response Time (nS)
400
300
0 20406080100120140
Load Capacitor (pF)
Low to High High to Low
600
VCC=5V, Input Overdrive Voltage=100mV
550
500
450
400
350
Response Time (nS)
300
250
200
-40-200 20406080100120
Low to High High to Low
Case Temperature (oC)
Figure 9. Response Time vs. Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Response Time (nS)
0.6
0.4
0.2 0 20406080100
Input OverdrIve Voltage (mV)
Low to High High to Low
VCC=5V, GND=0V
RL=5.1K
Figure 10. Response Time vs. Load Capacitor
Figure 11. Response Time vs. Input Overdrive Voltage
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
6
Page 7
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Typical Performance Characteristics (Continued)
Response Time (nS)
Figure 12.
Input
1.8
RL=5.1K
1.6
Input Overdrive Voltage=5mV
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 5 10 15 20 25 30
Low to High High to Low
Supply Voltage (V)
Response Time vs. Supply Voltage
20mV
10mV
5mV
Output
1.8
RL=5.1K
1.6
Input Overdrive Voltage=100mV
1.4
1.2
1.0
0.8
0.6
Response Time (nS)
0.4
0.2
0.0 0 5 10 15 20 25 30
Low to High High to Low
Supply Voltage (V)
Figure 13. Response Time vs. Supply Voltage
100mV
20mV 10mV
Input Overdrive Voltage=5mV
Output
Input
Input Overdrive Voltage=100mV
V
=5V, RL=5.1K
V
=5V, RL=5.1K
CC
Figure 14. Response Time for Positive Transition
CC
Figure 15. Response Time for Negative Transition
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
7
Page 8
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Typical Performance Characteristics (Continued)
Input
VCC=15V
V
=5V
CC
Output
Input Overdrive Voltage=100mV
Figure 16. Response Time for Positive Transition
Input
Output
Output
VCC=15V
=5V
V
CC
Input
Input Overdrive Voltage=100mV
Figure 17. Response Time for Negative Transition
Input
=5V, RL=5.1K
V
CC
Figure 19. 100kHz Response
Output
V
=5V, RL=5.1K
CC
Input Overdrive Voltage=5mV
Figure 18. 100kHz Response
Output
Input Overdrive Voltage=100mV
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
8
Page 9
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Typical Performance Characteristics (Continued)
Input
=5V, RL=5.1K
V
CC
Output
Input Overdrive Voltage=100mV
Figure 20. 500kHz Response
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
9
Page 10
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Typical Application
V
CC
5V
VIN+
+
AS331
+
V
REF
-
Figure 21. Basic Comparator
V
VIN+
REF
3K
V
OUT
V
CC
+
AS331
-
+
100K
V
OUT
Figure 22. Driving CMOS
V
CC
4.3K
1M
10K
100K
100pF
V
+
IN
1M
-
AS331
V
OUT
75pF
-
AS331
V
OUT
+
+
0.001µF
1M
Figure 23. One Shot Multivibrator
100K
V
IN
100K
Figure 24. Squarewave Oscillator
100K
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
10
Page 11
Data Sheet
LOW POWER LOW OFFSET VOLTAGE SINGLE COMPARATOR AS331
Mechanical Dimensions
Unit: mm(inch)SOT-23-5
2.820(0.111)
3.020(0.119)
)
)
4
2
2
1
0
0
.
.
0
)
)
9
)
)
4
6
0
1
1
1
.
.
0
0
(
(
0
0
5
5
6
9
.
.
2
2
7
5
6
0
0
.
.
0
0
(
(
0
0
0
0
5
7
.
.
1
1
0.200(0.008)
0
(
(
0
0
0
0
6
3
.
.
0
0
0.100(0.004)
0.200(0.008)
0.950(0.037)
P
Y
T
) 7 5 0
.
X
0
A
( 0
M
5 4
. 1
1.800(0.071)
2.000(0.079)
0.300(0.012)
0.400(0.016)
0
0
0
0
0
9
.
.
1
0
0
3
0
0
7
.
0
R
0
(
0
0
0
.
0
(
0
5
1
.
5
3
0
(
0
.
)
)
1
5
0
.
0
(
)
8
2
0
.
0
(
F
E
0°
8°
)
0
0
0
.
)
6
0
0
.
May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
11
Page 12
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
http://www.bcdsemi.com
MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufactur ing Limited
- Wafer Fab
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Shanghai SIM-BCD Semiconductor Manufacturing Limited
Tel: +86-21-24162266, Fax: +86-21-24162277
800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
REGIONAL SALES OFFICE
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Tel: +86-755-8826 7951
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Fax: +86-755-8826 7865
Tel: +86-755-8826 7951 Fax: +86-755-8826 7865
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
- IC Design Group
800 Yi Shan Road, Shanghai 200233, China
Advanced Analog Circuits (Shanghai) Corporation
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office BCD Semiconductor (Taiwan) Company Limited
Taiwan Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
BCD Semiconductor (Taiwan) Company Limited
Tai wan
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel: +886-2-2656 2808
Taiwan
Fax: +886-2-2656 2806
Tel: +886-2-2656 2808 Fax: +886-2-2656 2806
USA Office BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988 Fax: +1-510-324-2788
Loading...