Diodes APD160 User Manual

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Features

Applications

• Low Forward Voltage Drop

• Very Small Conduction Losses

• High Surge Capability

• Surge Overload Rating to 35A Peak

• Low Voltage High Frequency Inverters

DC-DC Converters

•

• Free Wheeling

• Polarity Protection

DO-41 R-1 DO-214AC

Figure 1. Package Types of APD160

Pin Configuration

VD/VH Package VR Package
(DO-41/R-1) (DO-214AC)

Cathode line by

marking

Cathode Anode

Figure 2. Pin Configuration of APD160 (Top View)

Cathode line by

marking

Cathode Anode

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

1

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Ordering Information

APD160 -

E1: Lead Free

Part Number Marking ID

Packing

Type

Package

Circuit T ype

Package
VD: DO-41
VH: R-1
VR: DO-214AC

Temperature

Range

G1: Green

Blank: Bulk

TR: Ammo or Tape & Reel

Lead Free Green Lead Free Green

DO-41

R-1

DO-214AC

-65 to 125°C

-65 to 125°C

-65 to 125°C

APD160VD-E1 APD160VD-G1 D160VD 160VDG Bulk
APD160VDTR-E1 APD160VDTR-G1 D160VD 160VDG Ammo

APD160VH-E1 APD160VH-G1 D160VH 160VHG Bulk
APD160VHTR-E1 APD160VHTR-G1 D160VH 160VHG Ammo

APD160VRTR-G1 160VRG

Tape &

Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

2

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Absolute Maximum Ratings (T

=25°C unless otherwise noted) (Note 1)

A

Parameter Symbol Value Unit

Maximum Repetitive Peak Reverse Voltage V

60 V

RRM

Maximum DC Blocking Voltag e VDC 60 V
Maximum RMS Voltage V

Average Rectified Forward Current

0.375” (9.5mm) Lead Length
Non-repetitive Peak Forward Surge Current

8.3ms Single Half Sine-wave on Rated Load
Operating Junction Temperature Range TJ -65 to 125

Storage Temperature Range T

42 V

RMS

I

1.0 A

F(AV)

35 A

I

FSM

°C

-65 to 150

STG

°C

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.

Thermal Characteristics

(TA=25°C unless otherwise noted)

Parameter Symbol Value Unit

DO-41 80

T ypica l Ther mal Resistance

θ

JA

R-1 80

°C/W

DO-214AC 100

Electrical Characteristics (T

=25°C unless otherwise noted)

A

Parameter Symbol Min Typ Max Unit

Forward Voltage @ IF=1.0A VF 0.68 V

Reverse Current @
Rated V

(Note 2)

R

TA=25°C

=100°C

T

A

I

R

Note 2: Pulse Test: 300µs pulse width, 1.0% duty cycle.

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

0.5
mA

10

3

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Typical Performance Characteristics

(TA=25°C unless otherwise noted)

2.0

1.5

1.0

0.5

Average Forward Recitified Current Amperes

0.0
0 20 40 60 80 100 120 140 160

Ambient Temperaure (oC)

10

1

0.1

Instantaneous Forward Current (A)

0.01

0.0 0 .2 0.4 0.6 0 .8 1.0 1.2 1 .4 1.6 1.8 2 .0

Instantaneous Forward Voltage (V)

0

25

C

0

125

C

Figure 3. Forward Current Derating Curve Figure 4. Typical Instantaneous Forward Characteristics

40

10000

1000

30

100

20

Peak Forward Surge Current (A)

10

1 10 100

Number of Cycle at 60Hz

10

1

Instantaneous Reverse Current (µA)

0.1
0 102030405060708090100

Percent of I nstantaneous Reverse Voltage ( %)

250C
1250C

Figure 5. Maximum Non-Repetitive Surge Current Figure 6. Typical Reverse Characteristics

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

4

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Typical Performance Characteristics (Continued)

400

91

Junction Capacitance (pF)

10

110

Reverse Voltage (V)

40

60

Figure 7. Typical Junction Capacitance

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

5

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Mechanical Dimensions

DO-41 Unit: mm(inch)

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

6

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Mechanical Dimensions (Continued)

R-1 Unit: mm(inch)

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

7

Data Sheet

SCHOTTKY BARRIER RECTIFIER APD160

Mechanical Dimensions (Continued)

DO-214AC Unit: mm(inch)

Cathode line by

marking

1.900(0.075)

2. 290(0. 090)

0. 760(0. 030)

1.520(0.060)

3. 990(0. 157)

4. 600(0. 181)

0.152(0. 006)

0.305(0. 012)

0.100(0.004)

0.310(0.012)

4. 800(0. 189)

5.280(0.208)

Aug. 2011 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

8

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

http://www.bcdsemi.com

MAIN SITE

MAIN SITE

- Headquarters

BCD Semiconductor Manufacturing Limited

BCD Semiconductor Manufactur ing Limited

- Wafer Fab

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Shanghai SIM-BCD Semiconductor Manufacturing Limited

Tel: [phone], Fax: [phone]

800, Yi Shan Road, Shanghai 200233, China
Tel: [phone], Fax: [phone]

REGIONAL SALES OFFICE

Shenzhen Office

REGIONAL SALES OFFICE

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

China

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Tel: [phone]

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Fax: [phone]

Tel: [phone]
Fax: [phone]

- Wafer Fab

BCD Semiconductor Manufacturing Limited

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

- IC Design Group

800 Yi Shan Road, Shanghai 200233, China

Advanced Analog Circuits (Shanghai) Corporation

Tel: [phone], Fax: [phone]

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: [phone], Fax: [phone]

Taiwan Office
BCD Semiconductor (Taiwan) Company Limited

Taiwan Office

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

BCD Semiconductor (Taiwan) Company Limited

Tai wan

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Tel: [phone]

Taiwan

Fax: [phone]

Tel: [phone]
Fax: [phone]

USA Office
BCD Semiconductor Corp.

USA Office

30920 Huntwood Ave. Hayward,

BCD Semiconductor Corporation

CA 94544, USA

30920 Huntwood Ave. Hayward,

Tel : [phone]

CA 94544, U.S.A

Fax: [phone]

Tel : [phone]
Fax: [phone]