• Halogen and Antimony Free. “Green” Device (Note 3)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
High-Side Gate Drive Boost Input. BS supplies the drive for the high-side N-Channel MOSFET switch.
Connect a 0.01µF or greater capacitor from SW to BS to power the high side switch.
Power Input. IN supplies the power to the IC, as well as the step-down converter switches. Drive IN with a
4.7V to 23V power source. Bypass IN to GND with a suitably large capacitor to eliminate noise on the input
to the IC. See Input Capacitor.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the output LC
filter from SW to the output load. Note that a capacitor is required from SW to BS to power the high-side
switch.c
Feedback Input. FB senses the output voltage and regulates it. Drive FB with a resistive voltage divider
connected to it from the output voltage. The feedback threshold is 0.925V. See Setting the Output Voltage.
Compensation Node. COMP is used to compensate the regulation control loop. Connect a series RC
network from COMP to GND. In some cases, an additional capacitor from COMP to GND is required. See
Compensation Components.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the regulator;
low to turn it off. Attach to IN with a 100k pull up resistor for automatic startup.
Soft-Start Control Input. SS controls the soft-start period. Connect a capacitor from SS to GND to set the
soft-start period. A 0.1µF capacitor sets the soft-start period to 15ms. To disable the soft-start feature, leave
SS floating.
Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Supply Voltage -0.3 to +26 V
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage -0.3V to +6 V
Enable/UVLO Voltage -0.3V to +6 V
Comp Voltage -0.3V to +6 V
Storage Temperature -65 to +150 °C
Junction Temperature +150 °C
Lead Temperature +260 °C
= +25°C, unless otherwise specified.)
A
-1.0 to V
V
-0.3 to VSW +6
SW
IN
+0.3
V
V
Thermal Resistance(Note 6)
Symbol Parameter Rating Unit
JA
JC
Note: 6. Test condition for SO-8EP: Measured on approximately 1” square of 1 oz copper
Recommended Operating Conditions (Note 7)(@T
Symbol Parameter Min Max Unit
VIN
TA
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
EN Lockout Threshold Voltage 2.2 2.5 2.7 V
EN Lockout Hysteresis 220 mV
INUV
INUV
HYS
Soft-Start Current
Soft-Start Period
TSD
Note: 8. Guaranteed by design
Shutdown Supply Current
Supply Current (Quiescent)
High-Side Switch On-Resistance (Note 8) 100 m
Low-Side Switch On-Resistance (Note 8) 100 m
HS Current Limit Minimum duty cycle 5.5 A
LS Current Limit From Drain to Source 0.9 A
Error Amplifier Voltage Gain
(Note 8)
COMP to Current Sense
Transconductance
Oscillator Frequency
Fold-back Frequency
Maximum Duty Cycle
Minimum On Time 130 ns
Feedback Voltage
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