Diodes AP2501, AP2511 User Manual

Page 1
Green
2.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH
Description
The AP2501 and AP2511 are single channel current-limited
integrated high-side power switches optimized for Universal Serial
Bus (USB) and other hot-swap applications. The family of devices
complies with USB standards and is available with both polarities of
Enable input.
The devices have fast short-circuit response time for improved
overall system robustness, and have integrated output discharge
function to ensure completely controlled discharging of the output
voltage capacitor. They provide a complete protection solution for
applications subject to heavy capacitive loads and the prospect of
short circuit, and offer reverse current blocking, over-current, over-
temperature and short-circuit protection, as well as controlled rise
time and under-voltage lockout functionality. A 7ms deglitch
capability on the open-drain Flag output prevents false over-current
reporting and does not require any external components.
All devices are available in SO-8, MSOP-8, MSOP-8EP,
U-DFN3030-8 and U-DFN2020-6 packages.
Features
Single channel current-limited power switch
Output discharge function
Fast short-circuit response time: 2µs
3.7A accurate current limiting (typ)
Reverse current blocking
70mΩ on-resistance (typ)
Input voltage range: 2.7V – 5.5V
Built-in soft-start with 0.6ms typical rise time
Over-current and thermal protection
Fault report (FLG) with blanking time (7ms typ)
ESD protection: 2kV HBM, 200V MM
Active low (AP2501) or active high (AP2511) enable
Ambient temperature range: -40°C to +85°C
SO-8, MSOP-8, MSOP-8EP, U-DFN3030-8 and U-DFN2020-6:
Available in “Green” Molding Compound (No Br, Sb)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
UL Recognized, File Number E322375
IEC60950-1 CB Scheme Certified
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Pin Assignments
(Top View)
GND
IN IN
EN
1
2
3
4
8
7
6
5
NC
OUT OUT
FLG
U-DFN3030-8
Typ e E
(Top View)
GND
IN
IN
EN
U-DFN2020-6
Note: Latter with exposed pad
Applications
LCD TVs & Monitors
Set-Top-Boxes, Residential Gateways
Laptops, Desktops, Servers, e-Readers
Printers, Docking Stations, HUBs
(Top View)
GND
IN
IN
EN
(SO-8)
(Top View)
1
2
3
4
MSOP-8/MSOP-8EP
(dotted line)
NC
OUT
OUT
FLG
NC
8
OUT
7
6
OUT
5
FLG
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
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© Diodes Incorporated
Page 2
Typical Applications Circuit
Enable Active High (AP2511)
Power Supply
2.7V to 5.5V
10k
Available Options
Part Number Channel
AP2501 1 Active Low
AP2511 1 Active High
Enable Pin
(EN)
OFF
IN
0.1uF
FLG
ON
EN
Recommended Maximum
Continuous Load Current (A)
OUT
GND
2.5A 3.7A
0.1uF 120uF
Typical Current Limit
(A)
Load
Package
SO-8
MSOP-8
MSOP-8EP U-DFN3030-8 U-DFN2020-6
Pin Descriptions
Pin Number
Pin Name
GND 1 1 2 Ground
IN 2, 3 2, 3
EN 4 4 3 Enable Input. Active low (AP2501) or active high (AP2511).
FLG 5 5
OUT 6, 7 6, 7 5 Voltage Output Pin (all OUT pins must be tied together externally)
NC 8 8 6 No internal connection; recommend tie to OUT pins.
Exposed Pad Exposed Pad Not applicable Exposed Pad
MSOP-8EP,
U-DFN3030-8
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
SO-8,
MSOP-8
U-DFN2020-6
1 Voltage Input Pin. Connect a 0.1µF or larger ceramic capacitor from IN to
GND as close as possible. (all IN pins must be tied together externally)
4 Over-temperature and over-current fault reporting with 7ms deglitch; active
low open-drain output. FLG is disabled for 7ms after turn-on.
Exposed pad. It should be externally connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path.
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Function
March 2013
© Diodes Incorporated
Page 3
Functional Block Diagram
IN
UVLO
Current
Sense
Discharge
OUT
Control
EN
Driver
Thermal
Current
Limit
FLG
Deglitch
Sense
GND
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Rating Unit
ESD HBM Human Body Model ESD Protection 2 kV
ESD MM Machine Model ESD Protection 200 V
VIN Input Voltage (Note 4) -0.3 to +6.5 V
V
Output Voltage (Note 4) -0.3 to 6.5 or VIN +0.3 V
OUT
V
Enable Voltage (Note 4) -0.3 to 6.5 or VIN +0.3 V
EN , VFLG
I
Maximum Continuous Load Current Internal Limited A
LOAD
T
Maximum Junction Temperature 150 °C
JMAX
TST Storage Temperature Range (Note 5) -65 to +150 °C
Notes: 4. All voltages referred to GND pin. Maximums are the lower of VIN + 0.3 and 6.5V
5. UL Recognized Rating from -30°C to +70°C (Diodes qualified T
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices
from -65°C to +150°C)
ST
Recommended Operating Conditions (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Min Max Unit
V
IN
I
OUT
VIH High-Level Input Voltage on EN 2.0 VIN V
VIL Low-Level Input Voltage on EN 0 0.8 V
TA Operating Ambient Temperature (Note 6), -40 +85 °C
Input voltage 2.7 5.5 V
Output Current 0 2.5 A
Note: 6. T
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
A(MAX)
= +70°C if V
≤ 4.1V and I
IN
= 2.5A to keep device from going into thermal protection.
OUT
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Page 4
Electrical Characteristics (@ T
Symbol Parameter Conditions (Note 7) Min Typ Max Unit
V
Input UVLO VIN rising 1.6 2.0 2.4 V
UVLO
ΔV
Input UVLO Hysteresis VIN decreasing 50 mV
UVLO
I
I
R
I
I
SHORT
T
I
LEAK-EN
I
LEAK-O
T
T
R
T
T
T
Notes: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
8. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V discharge function offers a resistive discharge path for the external storage capacitor for limited time.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
10. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.
11. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground
Input Shutdown Current Disabled, OUT = open 0.1 1.0 µA
SHDN
I
Input Quiescent Current Enabled, OUT = open 60 100 µA
Q
Input Leakage Current Disabled, OUT grounded 0.1 1.0 µA
LEAK
I
Reverse Leakage Current Disabled, V
REV
Switch on-resistance
DS(ON)
Over-Load Current Limit (Note 7) V
LIMIT
I
Current limiting trigger threshold Output Current Slew rate (<100A/s) 3.7 A
TRIG
Short-Circuit Current Limit Enabled into short circuit 3.7 A
Short-Circuit Response Time V
SHORT
V
EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V
IL
V
EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V
IH
EN Input leakage VIN = 5V, V
Output leakage current Disabled, V
Output turn-on delay time CL = 1µF, R
D(ON)
TR Output turn-on rise time CL = 1µF, R
Output turn-off delay time CL = 1µF, R
D(OFF)
TF Output turn-off fall time CL = 1µF, R
FLG output FET on-resistance I
FLG
I
FLG Off Current V
FOH
FLG Blanking Time
BLANK
T
Discharge time CL= 1µF, VIN = 5V, disabled to V
DIS
R
Discharge resistance (Note 8) VIN = 5V, disabled, I
DIS
Thermal Shutdown Threshold Enabled 140
SHDN
Thermal Shutdown Hysteresis 20
HYS
Thermal Resistance Junction-to-
θJA
Ambient
= +25°C, VIN = +5.0V, C
A
= 0V, V
IN
V
= 5V, I
IN
VIN = 3.3V, I
= 5V, V
IN
= 0V to I
OUT
= 10mA 20 40 Ω
FLG
= 5V 0.01 1.00 µA
FLG
= 1A
OUT
OUT
= 4.5V -40°C≤ TA ≤85°C 2.8 3.7 4.6 A
OUT
OUT
= 0V and 5.5V 0.01 1.00 µA
EN
= 0V 0.5 1 µA
OUT
LOAD
LOAD
LOAD
LOAD
Assertion or deassertion due to overcurrent and over-temperature condition
= 0.1µF, CL = 1µF,unless otherwise specified.)
IN
OUT
= 5V, I
at VIN 0.01 1.00 µA
REV
= 25oC 70 78
T
A
-40°C ≤ TA ≤ 85°C 105
= 25oC 90 108
T
= 1A
= I
(OUT shorted to ground) 2 µs
LIMIT
A
-40°C ≤ TA ≤ 85°C 135
= 5Ω 0.1 ms
= 5Ω 0.6 1.5 ms
= 5Ω 0.1 ms
= 5Ω 0.05 0.10 ms
4 7 15 ms
< 0.5V 0.6 ms
OUT
= 1mA 100 Ω
OUT
SO-8 (Note 9) 96
MSOP-8 (Note 9) 130
MSOP-8EP (Note 10) 92
U-DFN3030-8 (Note 10) 84
U-DFN2020-6 (Note 11) 90
mΩ
C
C
C/W
C/W
C/W
C/W
C/W
< V
UVLO
). The
IN
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
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Page 5
Typical Performance Characteristics
V
EN
V
OUT
50%
T
D(ON)
T
10%
R
Turn-On Delay and Rise Time
Vout 2V/div
Ven 5V/div
Iin 1A/div
Device Enable
V
EN
V
OUT
50%
T
D(ON)
90%
50%
T
D(OFF)
90%
10%
T
F
Figure 1 Voltage Waveforms: AP2501 (left), AP2511 (right)
All Enable Plots are for Enable Active Low
Turn-Off Delay and Fall Time
TA=25°C Vin=5V CL=1uF Rout=2.5Ω
Vout 2V/div
Ven 5V/div
Device Disable
Iin 1A/div
T
10%
50%
T
R
90%
D(OFF)
90%
10%
TA=25°C Vin=5V CL=1uF Rout=2.5Ω
T
F
Turn-On Delay and Rise Time
Vout 2V/div
Device Enable Ven 5V/div
Iin 1A/div
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
TA=25°C Vin=5V CL=120uF Rout=2.5Ω
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Turn-Off Delay and Fall Time
Vout 2V/div
Ven 5V/div
Device Disable
Iin 1A/div
TA=25°C Vin=5V CL=120uF Rout=2.5Ω
© Diodes Incorporated
March 2013
Page 6
Typical Performance Characteristics (cont.)
Device Enabled Into Short-Circuit
Inrush Current
Ven 5V/div
Iin 1A/div
Vout 2V/div
Iin 2A/div
FLG 5V/div
Full-Load to Short-Circuit
Transient Response
Output Short Circuit
Device Turns off and Re-enables Into Current-Limit
TA=25°C Vin=5V CL=120uF Rout=1Ω
TA=25°C Vin=5V Rout=2Ω
Ven 5V/div
CL=220uF
Iin 1A/div
CL=470uF
CL=120uF
Short-Circuit to Full-Load
Recovery Response
Output Short Circuit Removed
Vout 2V/div
Iin 2A/div
FLG 5V/div
Short Circuit Present Device Thermal Cycles
TA=25°C Vin=5V CL=120uF,220uF,470uF Rout=2.5Ω
=25°C
T
A
Vin=5V Rout=2Ω
No-Load to Short-Circuit
Transient Response
Vout 2V/div
Iin 2A/div
FLG 5V/div
Output Short Circuit
Device Enable Current-Limit
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
TA=25°C Vin=5V
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Short-Circuit to No-Load
Recovery Response
Output Short Circuit Removed Vout
2V/div
Iin 2A/div
Short Circuit Present Device
FLG 5V/div
Thermal Cycles
=25°C
T
A
Vin=5V
March 2013
© Diodes Incorporated
Page 7
Typical Performance Characteristics (cont.)
Power ON
FLG 5V/div
Iout 1A/div
Vout 5V/div
Vin 5V/div
TA=25°C Vin=5V Rout=2.5Ω CL=120uF
Short-Circuit with Blanking Time and
Recovery
FLG 5V/div
Vout 5V/div
Iout 2A/div
=25°C
T
A
Vin=5V
UVLO Increasing
Vout 2V/div
Vin 2A/div
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
TA=25°C Vin=5V Rout=33Ω CL=120uF
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Vout 2A/div
Vin 2V/div
UVLO Decreasing
TA=25°C Vin=5V Rout=33Ω CL=120uF
© Diodes Incorporated
March 2013
Page 8
TUR
N-OFF T
RN-O
UPPLY
C
U
R
R
N
T OUT
P
U
T
U
RN-O
M
E
Typical Performance Characteristics (cont.)
150 140
130 120
110 100
(µs)
90
80
N TI
70 60
50
T
40 30
20 10
0
3.53.02.0 2.5 6.05.04.0 4.5 5.5
C = 1µF
L
R = 5
L
T = 25°C
A
INPUT VOLTAGE (V)
Turn-On Time vs. Input Voltage
1000
900
800
700
600
500
N TIME (µs)
400
300
TU
200
100
0
3.53.02.0 2.5 6.05.04.0 4.5 5.5
C = 1µF
L
R = 5
L
T = 25°C
A
INPUT VOLTAGE (V)
Rise Time vs. Input Voltage
100
V = 5.5V
90
80
V = 5V
IN
IN
70
60
V = 2.7V
50
V =3.3V
IN
IN
40
30
20
10
SUPPLY CURRENT OUTPUT ENABLED (µA)
0
-50 -25 0 25 50 75 100 125
Supply Current, Output Enabled vs. Temperature
TEMPERATURE ( C)
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
www.diodes.com
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200
180
160
140
120
IME (µs)
100
80
60
40
20
0
3.53.02.0 2.5 6.05.04.0 4.5 5.5
INPUT VOLTAGE (V)
Turn-Off Time vs. Input Voltage
100
90
80
70
60
50
40
FAL L TIME (µs)
30
20
10
0
3.53.02.0 2.5 6.05.04.0 4.5 5.5
INPUT VOLTAGE (V)
Rise Time vs. Input Voltage
0.30
0.25
0.20
DISABLED (µA)
0.15
0.10
V = 5V
IN
V = 5.5V
0.05
0.00
-0.05
E
-0.10
V = 2.7V
IN
-0.15
-0.20
-0.25
-0.30
S
-50 -25 0 25 50 75 100 125 TEMPERATURE ( C)
Supply Current, Output Disabled vs. Temperature
C = 1µF
L
R = 5
L
T = 25°C
A
C = 1µF
L
R = 5
L
T = 25°C
A
IN
V =3.3V
IN
© Diodes Incorporated
March 2013
Page 9
U
NDERVOLTAG
O
CKOUT
2
THRESH
O
T
RIP CUR
RENT
5
Typical Performance Characteristics (cont.)
180 170 160 150 140 130 120
110 100
90 80
DS(ON)
R (m)
70 60 50 40 30 20 10
0
-50
V = 2.7V
IN
V =3.3V
IN
V = 5.5V
IN
V = 5V
IN
-25
0255075100125 TEMPERATURE ( C)
R vs. Temperature
DS(ON)
4.5
4.4
4.3
4.2
V =3.3V
IN
4.1
4.0
3.9
3.8
3.7
V = 5V
IN
3.6
3.5
3.4 33
3.2
3.1
SHORT-CIRCUIT OUTPUT CURRENT(A)
3.0
-25
-50
0255075 100 125
TEMPERATURE ( C)
Short-Circuit Output Current vs. Temperature
V = 2.7V
IN
V = 5.5V
IN
(V)
E L
2.
2.1
2.0
UVLO Rising
1.9
UVLO Falling
1.8
1.7
1.6
-50
-25
0255075100125 TEMPERATURE ( C)
Undervoltage Lockout vs. Temperature
4.
C = 120µF
4.4
(A)
4.3
L
T = 25°C
A
4.2
4.1
4.0
3.9
LD
3.8
3.7
3.6
3.5
2.5
2.0
3.5 4.0 4.5 5.0 5.5 6.03.0
INPUT VOLTAGE (V)
Threshold Trip Current vs. Input Voltage
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
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Page 10
Application Note
Power Supply Considerations
A 0.1μF to 2.2μF X7R or X5R ceramic bypass capacitor placed between IN and GND, close to the device, is recommended. When an external
power supply is used, or an additional ferrite bead is added to the input, high inrush current may cause voltage spikes higher than the device
maximum input rating during short circuit condition. In this case a 2.2μF or bigger capacitor is recommended. Placing a high-value electrolytic
capacitor on the input and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that
may cause ringing on the input. Additionally, bypassing the output with a 0.1μF to 1.0μF ceramic capacitor improves the immunity of the device
to short circuit transients.
Over-Current and Short Circuit Protection
An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the
series resistance of the current path. When an over-current condition is detected, the device maintains a constant output current and reduces
the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before
VIN has been applied. The AP2501/AP2511 senses the short circuit and immediately clamps output current to a certain safe level namely I
LIMIT
.
In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher inrush
current may flow for a very short period of time before the current limit function can react. The input capacitor(s) rapidly discharge through the
device, activating current limit circuitry. Protection is achieved by momentarily opening the P-MOS high-side power switch and then
gradually turning it on. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current
limiting mode and the current is clamped at I
LIMIT
.
In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until
the current-limit threshold (I
) is reached or until the thermal limit of the device is exceeded. The AP2501/AP2511 is capable of delivering
TRIG
current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current
limiting mode and is set at I
LIMIT
.
FLG Response
When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms
deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed.
Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which
does not trigger the FLG due to the 7-ms deglitch timeout. The AP2501/AP2511 is designed to eliminate false over-current reporting without the
need of external components to remove unwanted pulses.
Power Dissipation and Junction Temperature
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating
ambient temperature (T
P
= R
D
DS(ON)
) and R
A
2
× I
, the power dissipation can be calculated by:
DS(ON)
Finally, calculate the junction temperature:
T
= PD x R
J
JA
+ TA
Where: T R P
= Ambient temperature C
A
= Thermal resistance
JA
= Total power dissipation
D
Thermal Protection
Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The
AP2501/AP2511 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die
temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal
sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit
allowing the device to cool down approximately 20°C before the switch turns back on. The switch continues to cycle in this manner until the load
fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms
deglitch.
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
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Page 11
Application Note (cont.)
Under-voltage Lockout (UVLO)
Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V,
even if the switch is enabled. Whenever the input voltage falls below approximately 2V, the power switch is quickly turned off. This facilitates the
design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed.
Discharge Function
The discharge function of the device is active when enable is disabled or de-asserted. The discharge function with the N-MOS power switch
implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue
of the output voltage when either no external output resistance or load resistance is present at the output.
Ordering Information
Part Number Package Code Packaging
AP25X1S-13 S SO-8 2500/Tape & Reel -13
AP25X1M8-13 M8 MSOP-8 2500/Tape & Reel -13
AP25X1MP-13 MP MSOP-8EP 2500/Tape & Reel -13
AP25X1FGE-7 FGE U-DFN3030-8 3000/Tape & Reel -7
AP25X1SN-7 SN U-DFN2020-6 3000/Tape & Reel -7
Quantity Part Number Suffix
7”/13” Tape and Reel
Marking Information
(1) SO-8
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
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Page 12
Marking Information (cont.)
AP2501/AP2511
(2) MSOP-8
(3) MSOP-8EP
(4) U-DFN3030-8
(5) U-DFN2020-6
( Top View )
XX : Identification Code
Y
XX
W
XY
: Year : 0~9 : Week : A~Z : 1~26 week;
W
a~z : 27~52 week; z represents
52 and 53 week
: A~Z : Internal Code
X
Part Number Package Identification Code
AP2501FGE-7 U-DFN3030-8 BP
AP2511FGE-7 U-DFN3030-8 BR
( Top View )
XX : Identification Code
Y
XX
W
XY
: Year : 0~9
W
: Week : A~Z : 1~26 week;
a~z : 27~52 week; z represents
52 and 53 week
: A~Z : Internal Code
X
Part Number Package Identification Code
AP2501SN-7 U-DFN2020-6 DP
AP2511SN-7 U-DFN2020-6 DR
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
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© Diodes Incorporated
Page 13
AP2501/AP2511
Package Outline Dimensions (All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
1. Package type: SO-8
2. Package type: MSOP-8
e
b
D
D
x
y
1
b
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
A2
e
A1
E1
A2
E
E
A1
A3
A
Gauge Plane
Seating Plane
A3
A
0.25
h
Detail ‘A’
°
45
4
x
1
Detail C
E3
E1
0.254
L
7°~9
4
x
1
0
°
L
0
°
See Detail C
www.diodes.com
Gauge Plane Seating Plane
°
Detail ‘A’
a
c
13 of 18
Dim Min Max Typ
SO-8
Dim Min Max
A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0 8

All Dimensions in mm
MSOP-8
A - 1.10 ­A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39
b 0.22 0.38 0.30
c 0.08 0.23 0.15 D 2.90 3.10 3.00 E 4.70 5.10 4.90
E1 2.90 3.10 3.00 E3 2.85 3.05 2.95
e - - 0.65
L 0.40 0.80 0.60
a 0° 8° 4°
x - - 0.750
y - - 0.750
All Dimensions in mm
© Diodes Incorporated
March 2013
Page 14
AP2501/AP2511
Package Outline Dimensions (cont.) (All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
3. Package type: MSOP-8EP
D
x
y
E
E2
D1
4. Package type: U-DFN3030-8 Type E
5. Package type: U-DFN2020-6
1
e
A1
A
D
8Xb
A3
A2
A
A1
E
E2
Z (x4)
E3
E1
D
D2
e
Pin#1 ID
A
A1
D
D2
D2/2
E
E2
e
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
b
Gauge Plane Seating Plane
See Detail C
b (x8)
A3
L
0.25
4
X
c
A3
L (x8)
SEATING PLANE
4
X
1
0
°
1
0
°
L
Detail C
14 of 18
www.diodes.com
a
MSOP-8EP
Dim Min Max Typ
A - 1.10 ­A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39
b 0.22 0.38 0.30
c 0.08 0.23 0.15
D 2.90 3.10 3.00 D1 1.60 2.00 1.80
E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95
e - - 0.65
L 0.40 0.80 0.60
a 0° 8° 4°
x - - 0.750
y - - 0.750
All Dimensions in mm
U-DFN3030-8
Dim Min Max Typ
A1 0 0.05 0.02 A3
D2 2.15 2.35 2.25
E2 1.40 1.60 1.50
Dim Min Max Typ
A1 0 0.05 0.03 A3
D2 1.45 1.65 1.55
E2 0.76 0.96 0.86
All Dimensions in mm
Type E
A 0.57 0.63 0.60
 
b 0.20 0.30 0.25
D 2.95 3.05 3.00
E 2.95 3.05 3.00
e
 
L 0.30 0.60 0.45
Z
 
All Dimensions in mm
U-DFN2020-6
A 0.57 0.63 0.60
 
b 0.20 0.30 0.25
D 1.95 2.075 2.00
e
 
E 1.95 2.075 2.00
L 0.30 0.40 0.35
0.15
0.65
0.40
0.15
0.65
March 2013
© Diodes Incorporated
Page 15
AP2501/AP2511
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
(1) Package type: SO-8
(2) Package type: MSOP-8
Y
X
C2
X C
C1
Dimensions Value (in mm)
X 0.60
Y 1.55 C1 5.4 C2 1.27
Y
(3) Package type: MSOP-8EP
Y1
X C
G
Y2
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
Y
Y1
X1
15 of 18
www.diodes.com
Dimensions Value (in mm)
C 0.650 X 0.450 Y 1.350
Y1 5.300
Dimensions
C 0.650 G 0.450 X 0.450
X1 2.000
Y 1.350 Y1 1.700 Y2 5.300
Value
(in mm)
March 2013
© Diodes Incorporated
Page 16
AP2501/AP2511
Suggested Pad Layout (cont.)
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
(4) Package type: U-DFN3030-8 Type E
(5) Package type: U-DFN2020-6
Y
(x8)
X (x8) C
YC
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
X2
C1
Y Z
X1
Y1
Y2
G
G
www.diodes.com
16 of 18
Dimensions Value (in mm)
C 0.65
C1 2.35
X 0.30
Y 0.65 Y1 1.60 Y2 2.75
Dimensions Value (in mm)
Z 1.67
G 0.15
X1 0.90 X2 0.45
Y 0.37 C 0.65
March 2013
© Diodes Incorporated
Page 17
Taping Orientation (Note 12)
For U-DFN2020-6 and U-DFN3030-8 Type E
AP2501/AP2511
Note: 12. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
17 of 18
www.diodes.com
March 2013
© Diodes Incorporated
Page 18
AP2501/AP2511
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
18 of 18
www.diodes.com
March 2013
© Diodes Incorporated
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