Diodes AP2161D, AP2171D User Manual

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Green

1A SINGLE CHANNEL CURRENT-LIMITED

POWER SWITCH WITH OUTPUT DISCHARGE

Description

The AP2161D and AP2171D are integrated high-side power switches
optimized for Universal Serial Bus (USB) and other hot-swap
applications. The family of devices complies with USB 2.0 and is
available with both polarities of Enable input. They offer current and
thermal limiting and short circuit protection as well as controlled rise
time and under-voltage lockout functionality. A 7ms deglitch capability
on the open-drain Flag output prevents false over-current reporting
and does not require any external components.

All devices are available in SOT25, SO-8, MSOP-8, MSOP-8EP, and
U-DFN2018-6 packages.

Features

 Single USB Port Power Switches with Output Discharge
 Over-Current and Thermal Protection
 1.5A Accurate Current Limiting
 Fast Transient Response
 Reverse Current Blocking
 90m On-Resistance
 Input Voltage Range: 2.7V – 5.5V
 0.6ms Typical Rise Time
 Very Low Shutdown Current: 1µA (max)
 Fault Report (FLG) with Blanking Time (7ms typ)
 ESD Protection: 4kV HBM, 300V MM
 Active High (AP2171D) or Active Low (AP2161D) Enable
 Ambient Temperature Range -40°C to +85°C
 SOT25, SO-8, MSOP-8, MSOP-8EP (Exposed Pad), and

U-DFN2018-6: Available in “Green” Molding Compound

 (No Br, Sb)
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 UL Recognized, File Number E322375
 IEC60950-1 CB Scheme Certified

Applications

Consumer electronics – LCD TV & Monitor, Game Machines
Communications – Set-Top-Box, GPS, Smartphone
Computing – Laptop, Desktop, Servers, Printers, Docking

Station, HUB

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

Pin Assignments

1 of 19

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( Top View )

1

GND

2

IN

3

IN

4

EN

( Top View )

GND

1
2

IN

3

IN

4

EN

MSOP-8 / MSOP-8EP

Note: Latter with Exposed Pad

Dotted Line

( Top View )

OUT

GND

FLG

1

2

3

( Top View )

1

GND

2

IN

3

U-DFN2018-6

AP2161D/AP2171D

8

NC

7

OUT

6

OUT

5

FLG

SO-8

8
7
6

5

5

IN

4

EN

SOT25

6

OUT

5

OUT

4

FLGEN

NC
OUT
OUT

FLG

March 2013

© Diodes Incorporated

Typical Applications Circuit

AP2171D Enable Active High

Power Supply

2.7V to 5.5V

10k

10uF

0.1uF

IN

FLG

OUT

0.1uF

AP2161D/AP2171D

Load

120uF

ON

OFF

EN

GND

Available Options

Part Number Channel

AP2161D 1 Active Low 1.5A 1A
AP2171D 1 Active High 1.5A 1A

Enable Pin

(EN)

Current Limit

(Typical)

Pin Descriptions

Pin

Name

GND 1 1 2 1 Ground

IN

EN 4 4 4 3 Enable input, active low (AP2161D) or active high (AP2171D)

FLG 5 5 3 4

OUT

NC

Exposed tab - Exposed tab - Exposed tab

SO-8

MSOP-8

2, 3 2, 3 5 2 Voltage input pin (all IN pins must be tied together externally )

6, 7 6, 7 1 5, 6 Voltage output pin (all OUT pins must be tied together externa lly)

8 8 N/A N/A No internal connection; recommend tie to OUT pins

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

Pin Number

MSOP-8EP SOT25 U-DFN2018-6

www.diodes.com

Functions

Over-current and over-temperature fault report; open-drain flag is active low when
triggered

Exposed pad.
It should be connected to GND and thermal mass for enhanced thermal

impedance.
It should not be used as electrical ground conduction path.

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Recommended Maximum
Continuous Load Current

March 2013

© Diodes Incorporated

AP2161D/AP2171D

Functional Block Diagram

IN

Current

Sense

OUT

EN

UVLO

Driver

Current

Limit

Discharge

Control

FLG

Thermal

Sense

Deglitch

GND

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Symbol Parameter Ratings Unit

ESD HBM Human Body Model ESD Protection 4 kV

ESD MM Machine Model ESD Protection 300 V

VIN

V

OUT

V

EN , VFLG

I

LOAD

T

JMAX

TST

Note: 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C).

Input Voltage 6.5 V
Output Voltage

VIN +0.3

V
Enable Voltage 6.5 V
Maximum Continuous Load Current Internal Limited A
Maximum Junction Temperature 150 °C
Storage Temperature Range (Note 4) -65 to +150 °C

Recommended Operating Conditions (@T

= +25°C, unless otherwise specified.)

A

Symbol Parameter Min Max Unit

V

I

OUT

VIL
VIH

T

IN

A

Input Voltage 2.7 5.5 V
Output Current 0 1.0 A
EN Input Logic Low Voltage 0 0.8 V
EN Input Logic High Voltage 2 V

V

IN

Operating Ambient Temperature -40 +85 °C

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

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AP2161D/AP2171D

Electrical Characteristics (@T

= +25°C, VIN = +5.0V, unless otherwise specified.)

A

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

I

R

DS(ON)

I

SHORT

I

I

T

T

D(OFF)

R

T

R
T

T

T

Input UVLO 1.6 1.9 2.5 V

UVLO

Input Shutdown Current

SHDN

Input Quiescent Current

I

Q

Input Leakage Current Disabled, OUT grounded 0.1 1 µA

LEAK

Reverse Leakage Current

I

REV

Disabled, I
Enabled, I

Disabled, V

OUT

OUT

IN

= 0

= 0

= 0V, V

OUT

= 5V, I

REV

at VIN

SOT25, MSOP-8,
MSOP-8EP, SO-8

U-DFN2018-6 90 110

Switch On-Resistance

V
I

OUT

IN

= 5V,

= 1A

= +25°C

T

A

-40°C  TA  +85°C
T

VIN = 3.3V, I

Short-Circuit Current Limit
Over-Load Current Limit

LIMIT

Current Limiting Trigger Threshold

I

Trig

EN Input Logic Low Voltage

V

IL

EN Input Logic High Voltage

V

IH

EN Input Leakage

SINK

Output Turn-On Delay Time

D(ON)

Output Turn-On Rise Time

TR

Output Turn-Off Delay Time
Output Turn-Off Fall Time

TF

FLG Output FET On-Resistance

FLG

FLG Blanking Time

Blank

Discharge Resistance (Note 5)

DIS

Discharge Time CL = 1µF, VIN = 5V, disabled to VOUT < 0.5V 0.6 ms

DIS

Thermal Shutdown Threshold

SHDN

Thermal Shutdown Hysteresis 25 °C

HYS

1A
Enabled into short circuit, CL = 22µF

V

= 5V, V

IN

Output Current Slew rate (<100A/s) , CL = 22µF

= 2.7V to 5.5V

V

IN

= 2.7V to 5.5V

V

IN

V

EN

CL = 1µF, R
CL = 1µF, R
CL = 1µF, R
CL = 1µF, R
I

FLG

C

= 10µF, CL = 22µF

IN

VIN = 5V, disabled, I

Enabled, R

OUT

OUT

= 5V

LOAD
LOAD
LOAD
LOAD

= 10mA

LOAD

= +25°C

=

A

-40°C  T

 +85°C

A

= 4.0V, CL = 120µF, -40°C  TA  +85°C

= 10
= 10
= 10
= 10

= 1mA

OUT

= 1k

0.5 1 µA
45 70 µA

0.1 1 µA
95 115

140
120 140
170

1.2 A

1.1 1.5 1.9 A

2.0 A

0.8 V

2 V

1 µA

0.05 ms

0.6 1.5 ms

0.05 ms

0.05 0.1 ms
20 40 

4 7 15 ms

100 

140 °C

m

SOT25 (Note 6) 170

Thermal Resistance Junction-to-



JA

Ambient

SO-8 (Note 6) 127
MSOP-8 (Note 6) 118
MSOP-8EP (Note 7) 67

°C/W

U-DFN2018-6 (Note 7) 70

Notes: 5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.

6. Device mounted on FR-4 4 substrate PCB, 2oz copper, with minimum recommended pad layout.

7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

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Typical Performance Characteristics

AP2161D/AP2171D

V
5V/div

V
2V/div

EN

OUT

V

EN

V

OUT

50%

T

D(ON)

T

10%

50%

T

R

90%

D(OFF)

90%

10%

T

F

V

EN

50%

T

T

D(ON)

V

OUT

10%

50%

T

R

90%

D(OFF)

90%

10%

T

F

Figure 1 Voltage Waveforms: AP2161D (left), AP2171D (right)

All Enable Plots are for AP2171D Active High

Turn-On Delay and Rise Time

= 1µF

C

L

T

= +25°C

A

R

L

= 10

V
5V/div

V
2V/div

EN

OUT

Turn-Off Delay and Fall Time

C

=1µF

L

T

= +25°C

A

= 10

R

L

100µs/div

Turn-On Delay and Rise Time

V

EN

5V/div

V

OUT

2V/div

500µs/div

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

100µs/div

Turn-Off Delay and Fall Time

V

EN

5V/div

V

OUT

C

= 120µF

L

T

= +25°C

A

= 10

R

L

2V/div

C

= 120µF

L

= +25°C

T

A

R

=10

L

500µs/div

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© Diodes Incorporated

Typical Performance Characteristics (cont.)

Short Circuit Current,

Device Enabled Into Short

V

EN

5V/div

V

= 5V

IN

= +25°C

T

I

OUT

500mA/d

A

C

= 22µF

V

OUT

5V/div
V

FLAG

2V/div

I

OUT

1A/div

AP2161D/AP2171D

Short Circuit with Blanking Time and Recovery

20ms/div

V

= 5V

IN

T

= +25°C

A

= 22µF

C

L

1Ω Load Connected to Enabled Device

100µs/div

V

FLAG

2V/div

I

OUT

1A/div

1ms/div

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

2Ω Load Connected to Enabled Device

V

V

IN

T

= +25°C

A

= 22µF

C

L

= 5V

FLAG

2V/div

I

OUT

= 5V

V

IN

= +25°C

T

A

C

= 22µF

L

1A/div

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1ms/div

March 2013

© Diodes Incorporated

Typical Performance Characteristics (cont.)

V

FLAG

5V/div

Power On

T

= +25°C

A

= 120µF

C

L

R

= 10

L

Power Off

AP2161D/AP2171D

V

FLAG

5V/div

I

OUT

500mA/d

V

EN

5V/div

V

OUT

5V/div

V

IN

2V/div

I

OUT

500mA/d

2ms/div

UVLO Increasing

T
C
R

T

= +25°C

A

= 22µF

C

L

= 10

R

L

= +25°C

A

= 120µF

L

= 10

L

V

IN

2V/div

I

OUT

500mA/div

20ms/div

UVLO Decreasing

I

OUT

500mA/d

V

EN

V

OUT

T

= +25°C

A

C

= 22µF

L

= 10

R

L

5V/div

5V/div

V

OUT

2V/div

2ms/div

Discharge Time

No Load Resistance

T

= +25°C

A

V

= 5V

IN

No Load

CL = 470µF

I

IN

400mA/d

20ms/div

Inrush Current

C

=100µF

C

L

CL=680µF

=220µF

L

CL = 120µF

V

EN

2V/div

CL=22µF

V

EN

5V/div

100ms/div

1ms/div

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

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V

= 5V

IN

T

= +25°C

A

= 10

R

L

March 2013

© Diodes Incorporated

Typical Performance Characteristics (cont.)

Turn-On Time vs Input Voltage

800

700

600

500

400

300

Turn-On Time (us)

200

100

0

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

CL = 1µF

= 10

R

L

= 25°C

T

A

AP2161D/AP2171D

Turn-O f f Ti m e vs I nput Voltage

31

31

30

30

29

29

Turn-Off Time (us)

28

28

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Input Vo l tage (V)

CL = 1µF
R

= 10

L

= +25°C

T

A

Rise Tim e v s Input Voltage

600

500

400

300

200

Rise Time (us)

100

0

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

CL = 1µF

= 10

R

L

T

= +25°C

A

Supply Current , Output Enabled vs Ambien t Tem per at ure

65

60

55

V

50

45

40

35

Supply Current, Output Enab led (uA)

30

IN

-60 -40 -20 0 20 40 60 80 100

= 5.5V

V

= 5.0V

Ambient Temperature (°C )

V

= 3.3V

IN

VIN = 2.7V

Fall Time vs I nput Vol tage

25

24

23

22

Fall Time (us )

21

20

19

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Input Vo l tage (V)

Supply Current, Out put Di sabled vs A m bi ent Temperat ur e

1.60

1.40

1.20

1.00

V

V

IN

=3.3V

= 2.7V

0.80

0.60

0.40

0.20

Supply Current, Output Disable d (uA)

0.00

-45 -25 -5 15 35 55 75 95

V

IN

Ambient Temperature (°C)

VIN = 5.5V

= 5.0V

CL = 1µF

= 10

R

L

=+

°

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

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Typical Performance Characteristics (cont.)

Static Drain- Source On- Stat e Resist ance vs A m bient

200
190
180
170
160
150
140
130

Resistance (mΩ)

120

Static Drain-Source On-State

110
100

=

-60 -40 -20 0 20 40 60 80 100

Temperature

V

= 3.3V

IN

Ambient Temperature (°C)

V

=5V

AP2161D/AP2171D

Short- Circui t Out put Current vs A m bient Te m per a t ure

710

700

VIN=2.7V

690

680

670

660

650

640

Short-Circuit Output Current (mA)

630

-60 -40 -20 0 20 40 60 80 100

= 3.3V

V

IN

Amb ient Temper ature (°C)

V

IN

= 5.0V

V

IN

= 5.5V

Undervoltage Lockout vs Am bi ent Tem perat ur e

2.05

2.04

2.03

2.02

2.01

2.00

1.99

1.98

1.97

Undervoltage Lockout (V)

1.96

1.95

-60 -40 -20 0 20 40 60 80 100

UVLO Rising

UVLO Falling

Amb ient Temper ature ( °C)

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

Threshold Tri p Curr ent vs Input Volt age

1.15

1.14

1.13

1.12

1.11

Threshold Trip Current (A)

1.10

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2.83.33.84.34.85.3

Input Voltage (V)

TA = +25°C

= 22µF

C

L

© Diodes Incorporated

March 2013

AP2161D/AP2171D

Application Note

The AP2161D and AP2171D are integrated high-side power switches optimized for Universal Serial Bus (USB) that require protection functions.
The power switches are equipped with a driver that controls the gate voltage and incorporates slew-rate limitation. This, along with the various
protection features and special functions, makes these power switches ideal for hot-swap or hot-plug applications.

Protection Features:
Under-voltage Lockout (UVLO)

Under-voltage lockout function (UVLO) guarantees that the internal power switch is initially off during start-up. The UVLO functions only when the
switch is enabled. Even if the switch is enabled, the switch is not turned ON until the power supply has reached at least 1.9V. Whenever the input
voltage falls below approximately 1.9V, the power switch is turned off. This facilitates the design of hot-insertion systems where it is not possible to
turn off the power switch before input power is removed.

Over-current and Short Circuit Protection

An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series
resistance of the current path. When an over-current condition is detected, the device maintains a constant output current and reduces the output
voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.

The different overload conditions and the corresponding response of the AP2161D/2171D are outlined below:

S.NO Conditions Explanation Behavior of the AP2161D/2171D

Short circuit condition at

1

start-up

Short-circuit or over-current

2

condition

Gradual increase from
nominal operating current to

3

I

LIMIT

Output is shorted before input
voltage is applied or before the
part is enabled

Short-Circuit or Overload
condition that occurs when the
part is enabled.

Load increases gradually until
the current-limit threshold.(I

TRIG

Note that when the output has been shorted to GND at ext remely low temperature (< -30°C), a minimum 120-F electrolytic capacitor on the
output pin is recommended. A correct capacitor type with capacitor voltage rating and temperature characteristics must be properly chosen so
that capacitance value does not drop too low at the extremely low temperature operation. A recommended capacitor should have temperature
characteristics of less than 10% variation of capacitance change when operated at extremely low temp. Our recommended aluminum electrolytic
capacitor type is Panasonic FC series.

Thermal Protection

Thermal protection prevents the IC from damage when the die temperature e xceeds safe margins. This mainly occurs when heavy-overload or
short-circuit faults are present for extended periods of time. The AP2161D/AP2171D implements thermal sensing to monitor the operating junction
temperature of the power distribution switch. Once the die temperature rises to approximately +140°C, the Thermal protection feature gets
activated as follows: The internal thermal sense circuitry turns the power switch off and the FLG output is assert ed thus preventing the power
switch from damage. Hysteresis in the thermal sense circuit allows the device to cool down to approximately +25°C before the output is turned
back on. The built-in thermal hysteresis feature avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in
this manner until the load fault is removed, resulting in a pulsed output. The FLG open-drain output is asserted when an over-current occurs with
7-ms deglitch.

Reverse Current Protection

In a normal MOSFET switch, current can flow in reverse direction (from the output side to the input side) when the output side voltage is higher
than the input side, even when the switch is turned off. A reverse-current blocking feature is implemented in the AP21x1 series to prevent such
back currents. This circuit is activated by the difference between the output voltage and the input voltage. When the switch is disabled, this feature
blocks reverse current flow from the output back to the input.

The IC senses the short circuit and immediately clamps output
current to a certain safe level namely I

 At the instance the overload occurs, higher current may flow

for a very short period of time before the current limit function
can react.

 After the current limit function has tripped (reached the over-

current trip threshold), the device switches into current limiting
mode and the current is clamped at I

The current rises until I
has been reached, the device switches into its current limiting

)

mode and is set at I

or thermal limit. Once the threshold

TRIG

.

LIMIT

LIMIT.

LIMIT

.

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

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© Diodes Incorporated

AP2161D/AP2171D

Application Note (cont.)

Special Functions:
Discharge Function

When enable is de-asserted, the discharge function is active. The output capacitor is discharged through an internal NMOS that has a discharge
resistance of 100. Hence, the output voltage drops down to zero. The time taken for discharge is dependent on the RC time con stant of the
resistance and the output capacitor.

FLG Response

The FLG open-drain output goes active low for any of the two conditions: Over-Current or Over-Temperature. The time from when a fault condition
is encountered to when the FLG output goes low is 7-ms (TYP). The FLG output remains low until both over-current and over-temperature
conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary Over-cur rent condition, which
does not trigger the FLG due to the 7-ms deglitch timeout. The 7-ms timeout is also applicable for Over-current recovery and Thermal recovery.
The AP2161D/AP2171D are designed to eliminate erroneous Over-current reporting without the need for external components, such as an R C
delay network.

Applications Information:
Power Supply Considerations

A 0.01-F to 0.1-F X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. This limits the input
voltage drop during line transients. Placing a high-value electrolytic capacitor on the input (10-F minimum) and output pin(s) is recommended
when the output load is heavy. This precaution also reduces power-supply transients that may cause ringing on the input. Additionally, bypassing
the output with a 0.01-F to 0.1-F ceramic capacitor improves the immunity of the device to short-circuit transients. This capacitor also prevents
output from going negative during turn-off due to inductive parasitics.

Power Dissipation and Junction Temperature

The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating
ambient temperature (T

= R

P

D

The junction temperature can be calculated by:

Where:

DS(ON)

= PD x R

T

J

T

= Ambient Temperature °C

A

= Thermal Resistance

R

JA

= Total Power Dissipation

P

D

Generic Hot-Plug Applications

In many applications it may be necessary to remove modules or PC boards while the main unit is still operating. These are considered hot-plug
applications. Such implementations require the control of current surges as seen by the main power supply and the card being inser ted. The most
effective way to control these surges is to limit and slowly ramp up the current and voltage being applied to the card, similar to the way in which a
power supply normally turns on. Due to the controlled rise and fall times of the AP21 61D/AP2171D, these devices can be used to provide a softer
start-up to devices being hot-plugged into a powered system. The UVLO feature of the AP2161D/AP2171D also ensures that the switch is off after
the card has been removed, and that the switch is off during the next insertion.

By placing the AP2161D/AP2171D between the V
The typical rise time of the switch is approximately 1ms, providing a slow voltage ramp at the output of the device. This imple mentation controls
the system surge current and provides a hot-plugging mechanism for any device.



× I2

JA

) and R

A

+ TA

, the power dissipation can be calculated by:

DS(ON)

input and the rest of the circuitry, the input power reaches these devices first after insertion.

CC

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

11 of 19

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March 2013

© Diodes Incorporated

Ordering Information

AP2161D/AP2171D

AP 21 X 1 D XX G - X

Packing

7/13 : Tape & Reel

6 : A ctiv e L o w
7 : A c tive High

Channel

1 : 1 Channel

PackageEnable

S : S O-8
M8 : M S OP -8

Green

G : Green

MP : MSOP-8EP
W : S O T 2 5
FM : U-DFN2018-6

Part Number Package Code Packaging

AP21X1DSG-13 S SO-8 2500/Tape & Reel -13
AP21X1DM8G-13 M8 MSOP-8 2500/Tape & Reel -13
AP21X1DMPG-13 MP MSOP-8EP 2500/Tape & Reel -13

AP21X1DWG-7 W SOT25 3000/Tape & Reel -7

AP21X1DFMG-7 FM U-DFN2018-6 3000/Tape & Reel -7

Quantity Part Number Suffix

7”/13” Tape and Reel

Marking Information

(1) SO-8

Logo

Part Number

6 : Active Low
7 : Active High

( Top View )

8765

AP21X X D

YY WW X X

1 : 1 Channel

: Year : 08, 09,10~

YY

: Week : 01~52; 52

WW
represents 52 and 53 week
X

: Internal Code

G : Green

(2) MSOP-8

0 : Active Low

1 : Active High

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

Logo

Logo

Part Number

Part Number

6 : Active Low
7 : Active High

2

1

( Top view )

8765

AP21 X 1 D

AP23 X 1

1

34

Y

W X

234

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A~Z : Green

X: Inte rn a l Code

: Year : 0~9

Y

Y

: Year : 0~9

: Week : A~Z : 1~26 week;

W

W

: W eek : A~Z : 1~26 week;

a~z : 27~52 week; z represents

a~z: 27~52 week; z represent s

52 and 53 week

52 and 53 week

1 : 1 Channel

1 : 1 Channel

March 2013

© Diodes Incorporated

Marking Information (cont.)

(3) MSOP-8EP

Part Number

Part Number

6: Active Low

0 : Active Low

7: Active High

1 : Active High

(4) SOT25

Logo

Logo

( Top view )

8765

AP21 X 1 D

AP23 X 1

1

( Top View )

Y

W X E

234

AP2161D/AP2171D

A~Z : Green

X: Interna l Co d e

MSOP-8-EP

MSOP-8EP

Y

: Year : 0~9

Y

: Year : 0~9

: Week : A~Z : 1~26 week;

W

: W eek : A~Z : 1~26 week ;

W

a~z : 27~52 week; z represents

a~z: 27~52 week; z r epresents

52 and 53 week

52 and 53 week

1 : 1 Channel

1 : 1 Channel

(5) U-DFN2018-6

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

5

7

4

XX : Identification code

Y

: Year 0~9

W X

Y

XX

: Week : A~Z : 1~26 week;

W

a~z : 27~52 week; z represents
52 and 53 week

: A~Z : Green

1 2 3

Device Package Type Identification Code

AP2161DW SOT25 JC
AP2171DW SOT25 JD

Device Package Type Identification Code

AP2161DFM U-DFN2018-6 JC
AP2171DFM U-DFN2018-6 JD

X

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March 2013

© Diodes Incorporated

Package Outline Dimensions (All dimensions in mm.)

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

(1) SO-8

E1

E

A1

L

0.254

Gaug e Plane
Seating Plane

Detail ‘A’

e

b

D

A2

A

A3

h

°

45

7°~9

°

Detail ‘A’

(2) MSOP-8

D

A2

A1

x

y

E

Gauge Plane

Seating Plane

0.25

1

b

A3

A

e

4

x

1

Detail C

E3

E1

4

0

°

x

1

0

°

L

See Detail C

a

c

(3) MSOP-8EP

D

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

x

E

E2

y

1

e

A1

A

8Xb

A3

A2

D

D1

E3

E1

Gauge Plane
Seating Plane

c

See Detail C

0.25

4

X

1

4

X

1

0

°

0

°

L

Detail C

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a

AP2161D/AP2171D

Dim Min Max

All Dimensions in mm

Dim Min Max Typ

A - 1.10 ­A1 0.05 0.15 0.10
A2 0.75 0.95 0.86
A3 0.29 0.49 0.39

b 0.22 0.38 0.30

c 0.08 0.23 0.15

D 2.90 3.10 3.00

E 4.70 5.10 4.90
E1 2.90 3.10 3.00
E3 2.85 3.05 2.95

e - - 0.65

L 0.40 0.80 0.60

a 0° 8° 4°

x - - 0.750

y - - 0.750
All Dimensions in mm

Dim Min Max Typ

A - 1.10 ­A1 0.05 0.15 0.10
A2 0.75 0.95 0.86
A3 0.29 0.49 0.39

b 0.22 0.38 0.30
c 0.08 0.23 0.15

D 2.90 3.10 3.00
D1 1.60 2.00 1.80

E 4.70 5.10 4.90
E1 2.90 3.10 3.00
E2 1.30 1.70 1.50
E3 2.85 3.05 2.95

e - - 0.65

L 0.40 0.80 0.60

a 0° 8° 4°

x - - 0.750

y - - 0.750

All Dimensions in mm

SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10
E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0 8



MSOP-8

MSOP-8EP

March 2013

© Diodes Incorporated

Package Outline Dimensions (cont.) (All dimensions in mm.)

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

(4) SOT25

A

B C

K

J

H

N

D

L

M

(5) U-DFN2018-6

A

A1

Pin#1 ID

E

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

D

D2

e

A3

SEATING PLANE

L

E2

z

b

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AP2161D/AP2171D

Dim Min Max Typ

SOT25

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

 

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40

M 0.10 0.20 0.15

N 0.70 0.80 0.75

0° 8°



All Dimensions in mm

U-DFN2018-6

Dim Min Max Typ

A 0.545 0.605 0.575

A1 0 0.05 0.02
A3

 

b 0.15 0.25 0.20
D 1.750 1.875 1.80

D2 1.30 1.50 1.40

e

 

E 1.95 2.075 2.00

E2 0.90 1.10 1.00

L 0.20 0.30 0.25

z



All Dimensions in mm



0.95



0.13

0.50

0.30

March 2013

© Diodes Incorporated

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

(1) SO-8

(2) MSOP-8

(3) MSOP-8-EP

Y

Y1

X

C2

X C

Y

C1

Dimensions Value (in mm)

X 0.60

Y 1.55
C1 5.4
C2 1.27

Dimensions Value (in mm)

C 0.650
X 0.450
Y 1.350

Y1 5.300

X C

G

Y2

X1

Y

Y1

Dimensions

C 0.650
G 0.450
X 0.450

X1 2.000

Y 1.350
Y1 1.700
Y2 5.300

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

16 of 19

www.diodes.com

Value

(in mm)

AP2161D/AP2171D

March 2013

© Diodes Incorporated

Suggested Pad Layout (cont.)

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

(4) SOT25

(5) U-DFN2018-6

G

Z

Y

X

XC

Y

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

Y1

C2C2

Dimensions Value (in mm)

C1

G

X1

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Z

G

X
Y

C1 2.40
C2

Dimensions Value (in mm)

C 0.50

G 0.20

X 0.25

X1 1.60

Y 0.35

Y1 1.20

3.20

1.60

0.55

0.80

0.95

AP2161D/AP2171D

March 2013

© Diodes Incorporated

Taping Orientation (Note 8)

For U-DFN2018-6

AP2161D/AP2171D

Note: 8. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

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March 2013

© Diodes Incorporated

AP2161D/AP2171D

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnif y and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

AP2161D/AP2171D

Document number: DS32250 Rev. 5 - 2

19 of 19

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March 2013

© Diodes Incorporated