Diodes AP2141, AP2151 User Manual

Page 1
AP2141/ AP2151
Description
The AP2141 and AP2151 are integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB 2.0 and available with both polarities of Enable input. They offer current and thermal limiting and short circuit protection as well as controlled rise time and under-voltage lockout functionality. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components.
All devices are available in SO-8, MSOP-8EP, SOT25, and U-DFN2018-6 packages
Pin Assignments
Features
Single USB Port Power Switches Over-Current and Thermal Protection 0.8A Accurate Current Limiting Reverse Current Blocking 95m On-Resistance Input Voltage Range: 2.7V - 5.5V 0.6ms Typical Rise Time Very Low Shutdown Current: 1µA (max) Fault Report (FLG) with Blanking Time (7ms typ) ESD Protection: 4kV HBM, 400V MM Active High (AP2151) or Active Low (AP2141) Enable Ambient Temperature Range -40°C to +85°C SOT25, SO-8, MSOP-8EP (Exposed Pad), and U-DFN2018-6:
Available in “Green” Molding Compound (No Br, Sb)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
UL Recognized, File Number E322375 IEC60950-1 CB Scheme Certified
Applications
Consumer Electronics – LCD TV & Monitor, Game Machines Communications – Set-Top-Box, GPS, Smartphone Computing – Laptop, Desktop, Servers, Printers, Docking
Station, HUB
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
www.diodes.com
1 of 17
OUT
GND
FLG
( Top View )
1
2
3
SOT25
5
4
IN
EN
© Diodes Incorporated
March 2013
Page 2
Typical Applications Circuit
AP2151 Enable Active High
Power Supply
2.7V to 5.5V
10k
10uF
ON
0.1uF
IN
FLG
EN
GND
OUT
0.1uF
AP2141/ AP2151
Load
120uF
OFF
Available Options
Part Number Channel Enable Pin (EN) Current Limit (typical) Recommended Maximum Continuous Load Current
AP2141 1 Active Low 0.8A 0.5A AP2151 1 Active High 0.8A 0.5A
Pin Descriptions
Pin
Name
GND 1 1 2 1 Ground
IN 2, 3 2, 3 5 2 Voltage Input Pin (all IN pins must be tied together externally).
EN 4 4 4 3 Enable Input. Active Low (AP2141) or Active High (AP2151).
FLG 5 5 3 4
OUT 6, 7 6, 7 1 5, 6 Voltage Output Pin (all OUT pins must be tied together externally).
NC 8 8 N/A N/A No internal connection; recommend tie to OUT pins
Exposed
Pad
SO-8 MSOP-8EP SOT25 U-DFN2018-6
—
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
Pin Number
Exposed
Pad
—
Exposed
Pad
Function
Over-Current and Over-Temperature Fault Report. Open-Drain Flag is Active Low When Triggered
Exposed Pad. It should be externally connected to GND plane and thermal mass for
enhanced thermal impedance. It should not be used as electrical ground conduction path.
2 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 3
Functional Block Diagram
AP2141/ AP2151
AP2141, AP2151
Current
Sense
Current
Limit
Deglitch
GND
EN
IN
UVLO
Driver
Thermal
Sense
OUT
FLG
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Ratings Units
ESD HBM Human Body Model ESD Protection 4 kV
Machine Model ESD Protection
ESD MM
for SO-8,MSOP-8EP, SOT25 packages Machine Model ESD Protection
for U-DFN2018-6, SO-8 packages
VIN
V
OUT
V
EN , VFLG
I
LOAD
T
J(MAX)
TST
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices
Note: 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
Input Voltage 6.5 V Output Voltage Enable Voltage 6.5 V Maximum Continuous Load Current Internal Limited A Maximum Junction Temperature 150 °C Storage Temperature Range (Note 4) -65 to +150 °C
T
from -65°C to +150°C)
ST
400 V
300 V
VIN +0.3
V
Recommended Operating Conditions (@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Min Max Units
V
I
OUT
T
V
V
IN
A IL
IH
Input voltage 2.7 5.5 V Output Current 0 500 mA Operating Ambient Temperature -40 +85
C EN Input Logic Low Voltage 0 0.8 V EN Input Logic High Voltage 2
V
IN
V
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
3 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 4
AP2141/ AP2151
Electrical Characteristics (@T
Symbol Parameter Conditions Min Typ Max Unit
V
R
I
t
t T
Notes: 5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for SO-8, MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.
7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom layer 1.0”x1.4” ground plane.
Input UVLO
UVLO
Input Shutdown Current
I
SHDN
Input Quiescent Current
I
Q
Input Leakage Current Disabled, OUT grounded 1 µA
I
LEAK
Reverse Leakage Current
I
REV
Switch On-Resistance
DS(ON)
Short-Circuit Current Limit
SHORT
Over-Load Current Limit
I
LIMIT
Current Limiting Trigger Threshold
I
TRIG
EN Input Leakage
I
SINK
Output Turn-On Delay Time
t
D(ON)
Output Turn-On Rise Time
tR
Output Turn-Off delay Time
D(OFF)
Output Turn-Off Fall Time
tF
FLG Output FET On-Resistance
R
FLG
FLG Blanking Time
BLANK
Thermal Shutdown Threshold
SHDN
Thermal Shutdown Hysteresis 25
T
HYS
Thermal Resistance Junction-to-
θ
JA
Ambient
= +25°C, VIN = +5.0V, unless otherwise specified.)
A
R
= 1k
LOAD
Disabled, I Enabled, I
Disabled, VIN = 0V, V V
= 5V,
IN
I
= 0.5A
OUT
VIN = 3.3V, I
= 0.5A
OUT
= 0
OUT
= 0
OUT
OUT
T
= +25°C
A
-40°C TA  +85°C T
= +25°C
A
-40°C TA  +85°C
= 5V, I
REV
at VIN SOT25, SO-8, MSOP-8EP 95 115 U-DFN2018-6 90 110
Enabled into short circuit, CL = 22µF VIN = 5V, V
= 4.8V, CL = 22µF, -40C  TA  +85°C
OUT
Output Current Slew rate (<100A/s) , CL = 22µF V
= 5V
EN
CL = 1µF, R CL = 1µF, R CL = 1µF, R CL = 1µF, R
=10mA
I
FLG
LOAD LOAD LOAD LOAD
= 10 = 10 = 10 = 10
CIN = 10µF, CL = 22µF Enabled, R
LOAD
= 1k
1.6 1.9 2.5 V
0.5 1 µA 45 70 µA
1 µA
140 120 140 170
0.6 A
0.6 0.8 1.0 A
1.0 A 1 µA
0.05 ms
0.6 1.5 ms
0.01 ms
0.05 0.1 ms 20 40
4 7 15 ms
140
SO-8 (Note 5) 110 MSOP-8EP (Note 6) 60 SOT25 (Note 7) 157 U-DFN2018-6 (Note 8) 70
m
C C
o
C/W
o
C/W
o
C/W
o
C/W
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
4 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 5
Typical Performance Characteristics
AP2141/ AP2151
V
EN
V
OUT
50%
T
D(ON)
T
10%
50%
T
R
90%
D(OFF)
90%
10%
T
F
V
EN
50%
T
T
D(ON)
V
OUT
10%
50%
T
R
90%
D(OFF)
90%
10%
T
F
Figure 1. Voltage Waveforms: AP2141 (left), AP2151 (right)
All Enable Plots are for AP2151 Active High
V
EN
5V/div
V
OUT
2V/div
Turn-On Delay and Rise Time
V
EN
5V/div
V
C
= 1µF
L
T
= +25°C
A
=10
R
L
500µs/div
OUT
2V/div
Turn-Off Delay and Fall Time
500µs/div
= 1µF
C
L
= +25°C
T
A
R
=10
L
Turn-On Delay and Rise Time
V
EN
5V/div
V
OUT
2V/div
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
500µs/div
= 1µF
C
L
= +25°C
T
A
R
=10
L
5 of 17
www.diodes.com
V
EN
5V/div
V
OUT
2V/div
Turn-Off Delay and Fall Time
C
= 1µF
L
T
= +25°C
A
=10
R
L
500µs/div
March 2013
© Diodes Incorporated
Page 6
Typical Performance Characteristics (cont.)
Short Circuit Current,
Device Enabled Into Short
AP2141/ AP2151
Inrush Current
VEN 5V/div
I
OUT
200mA/div
V
FLAG
2V/div
I
OUT
500mA/div
V
= 5V
IN
= +25°C
T
A
= 22µF
C
L
500µs/div
3Ω Load Connected to Enabled Device
VIN = 5V T
= +25°C
A
= 22µF
C
L
2ms/div
VEN 5V/div
I
OUT
200mA/div
V
FLAG
2V/div
I
OUT
500mA/div
C
= 100µF
L
CL = 470µF
= 220µF
C
L
1ms/div
2Ω Load Connected to Enabled Device
= 5V
V
2ms/div
IN
T
= +25°C
A
= 22µF
C
L
V
= 5V
IN
T
= +25°C
A
= 10
R
L
Short Circuit with Blanking Time and Recovery
V
OUT
5V/div
V
FLAG
5V/div
I
OUT
1A/div
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
20ms/div
V
= 5V
IN
= +25°C
T
A
C
= 22µF
L
V
FLAG
5V/div
I
OUT
200mA/div
V
EN
5V/div
V
IN
5V/div
6 of 17
www.diodes.com
Power On
= +25°C
T
A
= 22µF
C
L
R
= 10
L
1ms/div
March 2013
© Diodes Incorporated
Page 7
Typical Performance Characteristics (cont.)
UVLO Increasing
= +25°C
T
V
IN
2V/div
I
OUT
200mA/div
1ms/div
A
C
= 22µF
L
R
= 10
L
V
IN
2V/div
I
OUT
200mA/div
AP2141/ AP2151
UVLO Decreasing
10ms/div
= +25°C
T
A
C
= 22µF
L
R
= 10
L
Turn-On Time vs Input Vol t age
800
700
600
500
400
300
Turn-On Time (us)
200
100
0
1.522.533.544.555.56
Input Vo ltage (V)
Rise Time vs I nput Voltage
600
500
400
300
200
Rise Time (us)
100
0
1.522.533.544.555.56
Input Vo ltage (V)
CL = 1µF R
= 10
L
= +25°C
T
A
CL = 1µF
= 10
R
L
T
= +25°C
A
Turn-O f f Ti m e vs I nput Voltage
31
31
30
30
29
29
Turn-Off Time (us)
28
28
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Input Vo l tage (V)
Fall Time vs Input Volt a ge
25
24
23
22
Fall Time (us)
21
20
19
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Input Vo l tage (V)
CL = 1µF R
= 10
L
= +25°C
T
A
CL = 1µF R
= 10
L
= +25°C
T
A
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
7 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 8
Typical Performance Characteristics (cont.)
Supply Current , Output Enabled vs Am bient Tempe r at ur e
65
60
V
= 5.0V
55
V
IN
50
45
40
35
Supply Current, Output Enab led (uA)
30
-60 -40 -20 0 20 40 60 80 100
= 5.5V
IN
V
IN
Ambient Temperature (°C)
= 3.3V
V
IN
= 2.7V
AP2141/ AP2151
Supply Current, Out put Di sable d vs A mbi ent Temperat ur e
1.60
1.40
1.20
1.00
V
= 3.3V
0.80
0.60
0.40
0.20
Supply Current, Output Disabled (uA)
0.00
IN
= 2.7V
V
IN
-45 -25 -5 15 35 55 75 95
V
IN
Ambient Temperature (°C)
VIN = 5.5V
= 5.0V
Static Drain- Source On- St ate Resi stance vs A m bi ent
200 190 180 170 160 150 140 130
Resistance (mΩ)
120
Static Drain-Source On-State
110 100
-60 -40 -20 0 20 40 60 80 100
Undervoltage Lockout vs A mbient Temperat ur e
2.05
2.04
2.03
2.02
2.01
2.00
1.99
1.98
1.97
Undervoltage Lockout (V)
1.96
1.95
-60 -40 -20 0 20 40 60 80 100
Temperature
= 3.3V VIN = 2.7V
V
IN
Ambient Tem perature (°C)
UVLO Rising
UVLO Falling
Ambient Temperature (°C)
V
IN
= 5.0V
Short-Circuit Output Curr ent vs A m bi ent Tem per at ur e
710
V
= 5.0V
700
690
680
670
660
650
640
Short-Circuit Output Current (mA)
630
-60 -40 -20 0 20 40 60 80 100
= 3.3V VIN = 2.7V
V
IN
Ambient Temperature (°C)
Threshold Tri p Cur r ent vs Input Volt age
1.15
1.14
1.13
1.12
1.11
Threshold Trip Current (A)
1.10
2.8 3.3 3.8 4.3 4.8 5.3
IN
Input Voltage (V)
= 5.5V
V
IN
TA = +25°C C
= 22µF
L
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
8 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 9
Typical Performance Characteristics (cont.)
Current Lim i t Response vs Peak Current
45 40 35 30 25 20 15 10
Current Limit Response (us)
5 0
2345678910
Peak Current (A )
CL = 22µF
= 5V
V
IN
T
= +25°C
A
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
9 of 17
www.diodes.com
AP2141/ AP2151
March 2013
© Diodes Incorporated
Page 10
AP2141/ AP2151
Application Information
Power Supply Considerations
A 0.01-F to 0.1-F X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the input (10-F minimum) and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01-F to 0.1-F ceramic capacitor improves the immunity of the device to short-circuit transients.
Over-current and Short Circuit Protection
An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before V has been applied. The AP2141/AP2151 senses the short circuit and immediately clamps output current to a certain safe level namely I
LIMIT
IN
.
In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher current may flow for a very short period of time before the current limit function can react. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and the current is clamped at I
LIMIT
.
In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (I
) is reached or until the thermal limit of the device is exceeded. The AP2141/AP2151 is capable of delivering current up
TRIG
to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at I
LIMIT
.
Note that when the output has been shorted to GND at extremely low temperature (< -30°C ), a minimum 120-F electrolytic capacitor on the output pin is recommended. A correct capacitor type with capacitor voltage rating and temperature characteristics must be properly chosen so that capacitance value does not drop too low at the extremely low temperature operation. A recommended capacitor should have temperature characteristics of less than 10% variation of capacitance change when operated at extremely low temp. Our recommended aluminum electrolytic capacitor type is Panasonic FC series.
FLG Response
When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temp e rature conditions are removed. C onnecting a he avy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2141/AP2151 is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses.
Power Dissipation and Junction Temperature
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (T
= R
P
D
DS(ON)
Finally, calculate the junction temperature:
T
= PD x R
J
Where:
T
= Ambient temperature °C
A
= Thermal resistance
R
JA
= Total power dissipation
P
D
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
JA
× I2
+ TA
) and R
A
, the power dissipation can be calculated by:
DS(ON)
www.diodes.com
10 of 17
March 2013
© Diodes Incorporated
Page 11
AP2141/ AP2151
Application Information (cont.)
Thermal Protection
Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2141/AP2151 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch.
Under-Voltage Lockout (UVLO)
Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 1.9V, even if the switch is enabled. Whenever the input voltage falls below approximately 1.9V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed.
Host/Self-Powered HUBs
Hosts and self-powered hubs (SPH) have a local power supply that powers the embedded functions and the downstream ports (see F igure 2). This power supply must provide from 5.25V to 4.75V to the board side of the downstream connection unde r both full-load and no-load conditions. Hosts and SPHs are required to have current-limit protection and must report over-current conditions to the USB controller. Typical SPHs are desktop PCs, monitors, printers, and stand-alone hubs.
Figure 2. Typical One-Port USB Host / Self-Powered Hub
Generic Hot-Plug Applications
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating. These are considered hot-plug applications. Such implementations require the control of current surges seen by the main power supply and the card being inserted. The most effective way to control these surges is to limit and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply normally turns on. Due to the controlled rise times and fall times of the AP2141/AP2151, these devices can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of the AP2141/AP2151 also ensures that the switch is off after the card has been removed, and that the switch is off during the next insertion.
By placing the AP2141/AP2151 between the V typical rise time of the switch is approximately 1ms, providing a slow voltage ramp at the output of the device. This implementation controls system surge current and provides a hot-plugging mechanism for any device.
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
input and the rest of the circuitry, the input power reaches these devices first after insertion. The
CC
11 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 12
Ordering Information
AP2141/ AP2151
Part Number Package Code Packaging
AP21X1WG-7 W SOT25 3000/Tape & Reel -7 AP21X1SG-13 S SO-8 2500/Tape & Reel -13
AP21X1MPG-13 MP MSOP-8EP 2500/Tape & Reel -13
AP21X1FMG-7 FM U-DFN2018-6 3000/Tape & Reel -7
.
Quantity Part Number Suffix
7”/13” Tape and Reel
Marking Information
(1) SO-8
( Top view )
8765
(2) MSOP-8EP
Logo
Part Number
4 : Active Low 5 : Active High
AP21X X
YY WW X X
2
1
34
1 : 1 Channel G : Green
: Year : 08, 09,10~
YY
: Week : 01~52; 52
WW
represents 52 and 53 week X
: Internal Code
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
12 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 13
Marking Information (cont.)
(3) SOT25
AP2141/ AP2151
( Top View )
(4) U-DFN2018-6
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
5
7
4
XX : Identification code
Y
: Year 0~9
W X
Y
XX
: Week : A~Z : 1~26 week;
W
a~z : 27~52 week; z represents 52 and 53 week
X
1 2 3
Device Package type Identification Code
AP2141W SOT25 HR AP2151W SOT25 HS
: A~Z : Green
(Top View)
XX
: Identification Code
Y : Year : 0~9
: Week : A~Z : 1~26 week;
W
a~z : 27~52 week; z represents
Y
XX
W X
52 and 53 week
: A~Z : Green
X
Device Package type Identification Code
AP2141FM U-DFN2018-6 HR AP2151FM U-DFN2018-6 HS
13 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Page 14
Package Outline Dimensions (All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
(1) SO-8
E1
E
A1
Detail ‘A’
L
0.254
Gaug e Plan e Seating Plane
7°~9
(2) MSOP-8EP
e
D
D
h
°
45
A2
A3
A
b
°
Detail ‘A’
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
x
y
1
e
A1
A
D
E
8Xb
A2
E2
A3
D1
E3
E1
Gauge Plane Seating Plane
c
See Detail C
0.25
4
X
1
www.diodes.com
0
°
4
X
Detail C
14 of 17
1
0
°
a
L
AP2141/ AP2151
Dim Min Max
Dim Min Max Typ
A - 1.10 ­A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39
b 0.22 0.38 0.30
c 0.08 0.23 0.15
D 2.90 3.10 3.00 D1 1.60 2.00 1.80
E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95
e - - 0.65
L 0.40 0.80 0.60
a 0° 8° 4° x - - 0.750 y - - 0.750
All Dimensions in mm
SO-8
A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10 E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0 8

All Dimensions in mm
MSOP-8EP
March 2013
© Diodes Incorporated
Page 15
Package Outline Dimensions (All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
(3) SOT25
A
B C
H
K
J
D
N
L
M
(4) U-DFN2018-6
A
Pin#1 ID
A1
D
D2
A3
SEATING PLANE
L
E
E2
e
z
b
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
15 of 17
www.diodes.com
AP2141/ AP2151
Dim Min Max Typ
SOT25
A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D
 
0.95
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75
0° 8°


All Dimensions in mm
U-DFN2018-6
Dim Min Max Typ
A 0.545 0.605 0.575
A1 0 0.05 0.02 A3
 
0.13
b 0.15 0.25 0.20 D 1.750 1.875 1.80
D2 1.30 1.50 1.40
e
 
0.50
E 1.95 2.075 2.00
E2 0.90 1.10 1.00
L 0.20 0.30 0.25
z
0.30
All Dimensions in mm
March 2013
© Diodes Incorporated
Page 16
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
(1) SO-8
X
(2) MSOP-8EP
(3) SOT25
Y2
C2
Y
X C
G
X1
(4) U-DFN2018-6
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
Y1
G
Z
Y
X
XC
Y
X1
C1
Y
Y1
C2C2
C1
G
16 of 17
www.diodes.com
Dimensions Value (in mm)
Dimensions
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80 C1 2.40 C2 0.95
Dimensions Value (in mm)
C 0.50 G 0.20 X 0.25
X1 1.60
Y 0.35
Y1 1.20
X 0.60
Y 1.55 C1 5.4 C2 1.27
Value
(in mm)
C 0.650 G 0.450
X 0.450
X1 2.000
Y 1.350 Y1 1.700 Y2 5.300
AP2141/ AP2151
March 2013
© Diodes Incorporated
Page 17
AP2141/ AP2151
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
17 of 17
www.diodes.com
March 2013
© Diodes Incorporated
Loading...