Diodes AP2138, AP2139 User Manual

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

General Description

The AP2138/2139 series are CMOS-based positive
voltage regulator ICs. Each of these ICs consists of a
voltage reference, an error amplifier, a resistor network
for setting output voltage and a current limit circuit for
current protection.

The difference between AP2138 and AP2139 is the
AP2139 has an enable circuit with a quick discharge
function.

These ICs feature high output voltage accuracy,
extremely low quiescent current and low dropout volt­age which make them ideal for use in various power
sources for portable applications.

The AP2138/2139 series have 1.2V, 1.4V, 1.5V, 1.8V,

2.5V, 2.8V, 3.0V, 3.3V, 3.6V and 4.0V fixed output
voltage versions.

Features

· Ultra-low Quiescent Current: 1.0μA Typical

· Output Voltages: 1.2V, 1.4V, 1.5V, 1.8V, 2.5V,

2.8V, 3.0V, 3.3V, 3.6V and 4.0V

· High Output Voltage Accuracy: ±2%

· Output Current: 250mA

· Low Dropout Voltage:

25mV Typical at I

200mV Typical at I

· Line Regulation: 6mV Typical

· Load Regulation: 25mV Typical

· Low Output Voltage Temperature Coefficient:

o

±100ppm/

· Low Standby Current: 0.1μA Typical (AP2139)

· Active Quick Output Discharge (AP2139)

· Logic-controlled Enable (AP2139)

C

=10mA and V

OUT

=100mA and V

OUT

=3V

OUT

=3V

OUT

Applications

The AP2138 series is available in SOT-23-3 and SOT­89 packages, AP2139 series is available in SOT-23-5
package.

· Battery Powered Equipment

· Reference Voltage Sources

· Cameras, Video Cameras

· Portable AV Systems

· Mobile Phones

· Communication Tools

· Portable Games

SOT-23-3

Figure 1. Package Types of AP2138/2139

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

SOT-23-5

1

SOT-89

Data Sheet

1

2

3

3

2

1

1

2

34

5

1

2

3

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Pin Configuration

N Package

(SOT-23-3)

V

IN

R Package

(SOT-89)

K Package

(SOT-23-5)

V

OUT

GND

V

GND

CE

IN

RA Package

(SOT-89)

V

OUT

V

NC

OUT

V

IN

V

IN

GND

Figure 2. Pin Configuration of AP2138/2139 (Top View)

Pin Description

Pin Number

Pin Name Function

SOT-23-3 SOT-89 (R) SOT-89 (RA) SOT-23-5

1 1 2 2 GND Ground

23 1 5V

32 3 1V

3 CE Active high enable input. Logic high=enable, logic

4 NC No connection

OUT

IN

Regulated output voltage

Input voltage

low=shutdown

GND

V

OUT

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

2

Data Sheet

VREF

CURRENT

LIMIT

VREF

CURRENT LIMIT

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Functional Block Diagram

V

3 (2)[3]

IN

AP2138

2 (3)[1]

1 (1)[2]

V

OUT

GND

A(B)[C]
A: SOT-23-3

B: SOT-89 (R)
C: SOT-89 (RA)

V

IN

CE

1

3

5

2

GND

AP2139

Figure 3. Functional Block Diagram of AP2138/2139

V

OUT

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

3

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Ordering Information

G1: Green

TR: Tape and Reel

1.2: Fixed Output 1.2V

1.4: Fixed Output 1.4V

1.5: Fixed Output 1.5V

1.8: Fixed Output 1.8V

2.5: Fixed Output 2.5V

2.8: Fixed Output 2.8V

3.0: Fixed Output 3.0V

3.3: Fixed Output 3.3V

3.6: Fixed Output 3.6V

4.0: Fixed Output 4.0V

Condition Part Number Marking ID

Packing

Typ e

Circuit Type

8: AP2138
9: AP2139

A: Active High
with Built-in Resistor
Blank: No Enable Function

Package
N: SOT-23-3
K: SOT-23-5

R/RA: SOT-89

Package

Temperature

Range

AP213X -

SOT-23-3

SOT-89

-40 to 85

-40 to 85

1.2V

1.4V

1.5V

1.8V

o

C

o

C

2.5V

2.8V

3.0V

3.3V

3.6V

4.0V

1.2V(R) AP2138R-1.2TRG1 G42C Tape & Reel

1.4V (R)

1.5V (R)

1.8V (R)

2.5V (R)

2.8V (R)

3.0V (R)

3.3V (R)

AP2138N-1.2TRG1 GA3 Tape & Reel

AP2138N-1.4TRG1 GG1

AP2138N-1.5TRG1 GG2

AP2138N-1.8TRG1 GG4

AP2138N-2.5TRG1 GG5

AP2138N-2.8TRG1 GG6

AP2138N-3.0TRG1 GG3

AP2138N-3.3TRG1 GG7

AP2138N-3.6TRG1 GG8

AP2138N-4.0TRG1 GE9

AP2138R-1.4TRG1

AP2138R-1.5TRG1

AP2138R-1.8TRG1

AP2138R-2.5TRG1

AP2138R-2.8TRG1

AP2138R-3.0TRG1

AP2138R-3.3TRG1

G42D Tape & Reel

G42E Tape & Reel

G42F Tape & Reel

G42G Tape & Reel

G42H Tape & Reel

G42J Tape & Reel

G42K Tape & Reel

Tap e & Re el

Tap e & Re el

Tap e & Re el

Tap e & Re el

Tap e & Re el

Tap e & Re el

Tap e & Re el

Tap e & Re el

Tap e & Re el

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

4

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Ordering Information (Continued)

Package Temperature Range Condition Part Number Marking ID

1.2V (RA) AP2138RA-1.2TRG1 G13L Tape & Reel

AP2138RA-1.4TRG1

AP2138RA-1.5TRG1

AP2138RA-1.8TRG1

AP2138RA-2.5TRG1

AP2138RA-2.8TRG1

AP2138RA-3.0TRG1

AP2138RA-3.3TRG1

G13M Tape & Reel

G13N Tape & Reel

G13O Tape & Reel

G13P Tape & Reel

G33J Tape & Reel

G37J Tape & Reel

G41J Tape & Reel

SOT-89

SOT-23-5

-40 to 85

-40 to 85

1.4V (RA)

1.5V (RA)

o

C

Active High with Built-in Resistor AP2139AK-1.2TRG1 G7R Tape & Reel

Active High with Built-in Resistor AP2139AK-1.4TRG1 G6L Tape & Reel

Active High with Built-in Resistor AP2139AK-1.5TRG1 G6M Tape & Reel

o

C

Active High with Built-in Resistor AP2139AK-1.8TRG1 G6N Tape & Reel

Active High with Built-in Resistor AP2139AK-2.5TRG1 G6P Tape & Reel

Active High with Built-in Resistor AP2139AK-2.8TRG1 G6Q Tape & Reel

Active High with Built-in Resistor AP2139AK-3.0TRG1 G6J Tape & Reel

Active High with Built-in Resistor AP2139AK-3.3TRG1 G6R Tape & Reel

1.8V (RA)

2.5V (RA)

2.8V (RA)

3.0V (RA)

3.3V (RA)

Packing

Typ e

BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Input Voltage V

Enable Input Voltage (AP2139) V

Lead Temperature T

Junction Temperature T

Storage Temperature Range T

IN

CE

LEAD

J

STG

ESD (Machine Model) ESD 350 V

ESD (Human Body Model) ESD 2000 V

SOT-23-3 250

Thermal Resistance (Note 2) θ

JA

SOT-23-5 250

SOT-89 165

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica­tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, T

perature, T

)/θ

T

A

The maximum allowable power dissipation at any ambient temperature is calculated using: P

A.

Exceeding the maximum allowable power dissipation will result in excessive die temperature.

JA.

the junction-to-ambient thermal resistance, θ

J(max),

7.0 V

-0.3 to VIN+0.3 V

o

=(T

o

o

o

C/W

260

150

-65 to 150

and the ambient tem-

JA,

D(max)

C

C

C

J(max)

-

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Input Voltage V

Operating Ambient Temperature Range

IN

T

A

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

6

2.5 6.6 V

-40 85

o

C

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics
AP2138/2139-1.2 Electrical Characteristics

(VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

1.176 1.200 1.224 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

OUT

≤100mA

25 40 mV

unless

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

Short Circuit Current

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

Thermal Resistance

(ΔV

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

I

PD

V

IH

V

IL

θ

JC

/ΔT

)/ΔT

2.2V≤VIN≤6V

I

=10mA 100 300

OUT

I

=30mA 400 700

OUT

=100mA 700 1000

I

OUT

I

=250mA 1000 1300

OUT

618mV

±140

±100

V

=0

OUT

1.2 V

SOT-23-3 81.9

SOT-23-5 81.9

SOT-89 51.1

50 mA

0.2 μA

mV

μV/

ppm/

0.3 V

o

C/W

o

C

o

C

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics(Continued)
AP2138/2139-1.4 Electrical Characteristics

(VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

(ΔV

Short Circuit Current

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

/ΔT

)/ΔT

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

1.372 1.400 1.428 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

2.4V≤VIN≤6V

I

OUT

I

OUT

I

OUT

I

OUT

V

OUT

OUT

≤100mA

25 40 mV

618mV

=10mA 100 300

=30mA 400 700

=100mA 600 900

=250mA 1000 1300

±140

±100

=0

50 mA

mV

μV/

ppm/

unless

o

C

o

C

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

I

PD

V

IH

V

IL

1.2 V

0.2 μA

0.3 V

SOT-23-3 81.9

Thermal Resistance

θ

JC

SOT-23-5 81.9

o

C/W

SOT-89 51.1

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138/2139-1.5 Electrical Characteristics

(VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

1.470 1.500 1.530 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

OUT

≤100mA

25 40 mV

unless

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

Short Circuit Current

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

Thermal Resistance

(ΔV

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

I

PD

V

IH

V

IL

θ

JC

/ΔT

)/ΔT

2.5V≤VIN≤6V

I

=10mA 100 300

OUT

I

=30mA 200 400

OUT

=100mA 600 900

I

OUT

I

=250mA 1000 1300

OUT

618 mV

±150

±100

V

=0

OUT

1.2 V

SOT-23-3 81.9

SOT-23-5 81.9

SOT-89 51.1

50 mA

0.2 μA

mV

μV/

ppm/

0.3 V

o

C/W

o

C

o

C

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138/2139-1.8 Electrical Characteristics

(VIN=2.8V, VCE=2.8V (AP2139),TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

(ΔV

Short Circuit Current

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

/ΔT

)/ΔT

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

1.764 1.800 1.836 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

2.8V≤VIN≤6V

I

OUT

I

OUT

I

OUT

I

OUT

V

OUT

OUT

≤100mA

25 40 mV

618 mV

=10mA 25 100

=30mA 120 250

=100mA 400 700

=250mA 850 1100

±180

±100

=0

50 mA

mV

μV/

ppm/

unless

o

C

o

C

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

I

PD

V

IH

V

IL

1.2 V

0.2 μA

0.3 V

SOT-23-3 81.9

Thermal Resistance

θ

JC

SOT-23-5 81.9

o

C/W

SOT-89 51.1

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138/2139-2.5 Electrical Characteristics

(VIN=3.5V, VCE=3.5V (AP2139), TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

2.450 2.500 2.550 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

OUT

≤100mA

25 40 mV

unless

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

Short Circuit Current

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

Thermal Resistance

(ΔV

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

I

PD

V

IH

V

IL

θ

JC

/ΔT

)/ΔT

3.5V≤VIN≤6V

I

=10mA 25 100

OUT

I

=30mA 100 250

OUT

=100mA 250 500

I

OUT

I

=250mA 650 1000

OUT

618 mV

±250

±100

V

=0

OUT

1.2 V

SOT-23-3 81.9

SOT-23-5 81.9

SOT-89 51.1

50 mA

0.2 μA

mV

μV/

ppm/

0.3 V

o

C/W

o

C

o

C

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

11

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138/2139-2.8 Electrical Characteristics

(VIN=3.8V, VCE=3.8V (AP2139), TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

(ΔV

Short Circuit Current

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

/ΔT

)/ΔT

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

2.744 2.800 2.856 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

3.8V≤VIN≤6V

I

OUT

I

OUT

I

OUT

I

OUT

V

OUT

OUT

≤100mA

25 40 mV

618 mV

=10mA 25 100

=30mA 70 200

=100mA 250 500

=250mA 500 800

±280

±100

=0

50 mA

mV

μV/

ppm/

unless

o

C

o

C

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

I

PD

V

IH

V

IL

1.2 V

0.2 μA

0.3 V

SOT-23-3 81.9

Thermal Resistance

θ

JC

SOT-23-5 81.9

o

C/W

SOT-89 51.1

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

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Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138/2139-3.0 Electrical Characteristics

(VIN=4V, VCE=4V (AP2139), TJ=25oC, I

erwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

unless oth-

6.6 V

2.940 3.000 3.060 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

OUT

≤100mA

25 40 mV

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

Short Circuit Current

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

Thermal Resistance

(ΔV

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

I

PD

V

IH

V

IL

θ

JC

/ΔT

)/ΔT

4V≤VIN≤6V

I

=10mA 25 100

OUT

I

=30mA 70 200

OUT

I

=100mA 200 400

OUT

=250mA 450 700

I

OUT

618mV

±300

±100

V

=0

OUT

1.2 V

SOT-23-3 81.9

SOT-23-5 81.9

SOT-89 51.1

50 mA

0.2 μA

mV

μV/

ppm/

0.3 V

o

C/W

o

C

o

C

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

13

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138/2139-3.3 Electrical Characteristics

(VIN=4.3V, VCE=4.3V (AP2139),TJ=25oC, I

otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Standby Current (AP2139) I

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

(ΔV

Short Circuit Current

=40mA, CIN=C

OUT

IN

OUT

Q

STD

OUT

V

RLOAD

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

/ΔT

)/ΔT

=1μF,

Bold

OUT

typeface applies over -40oC

≤TJ≤

85oC,

6.6 V

3.234 3.300 3.366 V

I

=0 1.0 1.5 μA

OUT

VCE=0 0.1 1 μA

250 mA

1mA≤I

4.3V≤VIN≤6V

I

OUT

I

OUT

I

OUT

I

OUT

V

OUT

OUT

≤100mA

25 40 mV

618mV

=10mA 20 100

=30mA 50 200

=100mA 160 300

=250mA 400 600

±330

±100

=0

50 mA

mV

μV/

ppm/

unless

o

C

o

C

CE Pull-down Constant
Current (AP2139)

CE Input Logic-high
Voltage (AP2139)

CE Input Logic-low
Voltage (AP2139)

I

PD

V

IH

V

IL

1.2 V

0.2 μA

0.3 V

SOT-23-3 81.9

Thermal Resistance

θ

JC

SOT-23-5 81.9

o

C/W

SOT-89 51.1

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

14

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138-3.6 Electrical Characteristics

(VIN=4.6V, TJ=25oC, I

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Output Current I

Load Regulation

=40mA, CIN=C

OUT

OUT

V

RLOAD

=1μF,

IN

OUT

Q

OUT

Bold

typeface applies over -40oC

I

=0 1.0 1.5 μA

OUT

1mA≤I

OUT

≤100mA

≤TJ≤

85oC,

unless otherwise specified.)

6.6 V

3.528 3.600 3.672 V

250 mA

25 40 mV

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

Short Circuit Current

Thermal Resistance

(ΔV

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

θ

JC

/ΔT

)/ΔT

4.6V≤VIN≤6V

I

=10mA 20 100

OUT

I

=30mA 50 200

OUT

=100mA 160 300

I

OUT

I

=250mA 400 600

OUT

618mV

±330

±100

V

=0

OUT

SOT-23-3 81.9

SOT-23-5 81.9

SOT-89 51.1

50 mA

mV

μV/

ppm/

o

C/W

o

C

o

C

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

15

Data Sheet

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Electrical Characteristics (Continued)
AP2138-4.0 Electrical Characteristics

(VIN=5.0V, TJ=25oC, I

Parameter Symbol Conditions Min Typ Max Unit

Input Voltage V

Output Voltage V

Quiescent Current I

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

Output Voltage
Temperature Coefficient

Short Circuit Current

=40mA, CIN=C

OUT

(ΔV

=1μF,

OUT

IN

OUT

Q

OUT

V

RLOAD

V

RLINE

V

DROP

ΔV

OUT

OUT/VOUT

I

SHORT

Bold

typeface applies over -40oC

I

=0 1.0 1.5 μA

OUT

1mA≤I

5V≤VIN≤6V

I

=10mA 20 100

OUT

I

=30mA 50 200

OUT

I

=100mA 160 300

OUT

I

=250mA 400 600

OUT

/ΔT

)/ΔT

V

OUT

OUT

=0

≤100mA

≤TJ≤

85oC,

unless otherwise specified.)

6.6 V

3.920 4.000 4.080 V

250 mA

25 40 mV

618mV

±330

±100

50 mA

mV

μV/

ppm/

o

C

o

C

SOT-23-3 81.9

Thermal Resistance

θ

JC

SOT-23-5 81.9

o

C/W

SOT-89 51.1

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

16

Data Sheet

-40-200 20406080100120

3.20

3.22

3.24

3.26

3.28

3.30

3.32

3.34

3.36

3.38

3.40

AP2138-3.3

Output Voltage (V)

Junction Temperature(oC)

I

OUT

=10mA

I

OUT

=100mA

I

OUT

=150mA

I

OUT

=200mA

I

OUT

=250mA

0 25 50 75 100 125 150 175 200 225 250

3.20

3.22

3.24

3.26

3.28

3.30

3.32

3.34

3.36

3.38

3.40

AP2138-3.3
V

IN

=4.3V

T

J

=25oC

Output Voltage (V)

Output Current (mA)

012345678

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

AP2138-3.3
No Load

TJ=-40oC

TJ=25oC

TJ=85oC

Quiescent Current(μA)

Input Voltage (V)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

AP2138-3.3
No load

TJ=-40oC

TJ=25oC

TJ=85oC

Output Voltage (V)

Input Voltage (V)

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Typical Performance Characteristics

Figure 4. Output Voltage vs. Input Voltage

Figure 6. Output Voltage vs. Output Current

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

Figure 5. Output Voltage vs. Junction Temperature

Figure 7.

Quiescent Current vs. Input Voltage

17

Data Sheet

-40 -20 0 20 40 60 80

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

AP2138-3.3
V

IN

=4.3V

No Load

Quiescent Current (μA)

Junction Temperature(oC)

0 25 50 75 100 125 150 175 200 225 250

0

5

10

15

20

25

30

35

40

45

50

AP2138-3.3
V

IN

=4.3V

TJ=-40oC

TJ=25oC

TJ=85oC

Quiescent Current (μA)

Output Current (mA)

0 50 100 150 200 250 300 350 400 450 500 550 600

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TJ=-40oC

TJ=25oC

TJ=85oC

AP2138-3.3
V

IN

=4.3V

Output Voltage (V)

Output Current (mA)

0 50 100 150 200 250 300 350 400 4 50 500 550 600

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

AP2138-3.3
T

J

=25oC

Output Voltage (V)

Output Current (mA)

VIN=3.8V

VIN=4.3V

VIN=6V

VIN=6.5V

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Typical Performance Characteristics (Continued)

Figure 8. Quiescent Current vs. Junction Temperature

Figure 9. Quiescent Current vs. Output Current

Figure 10. Output Voltage vs. Output Current

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

Figure 11. Output Voltage vs. Output Current

18

Data Sheet

0 25 50 75 100 125 150 175 200 225 250

0

50

100

150

200

250

300

350

400

450

500

550

600

AP2138-3.3

Dropout Voltage (mV)

Output Current (mA)

TJ=-40oC

TJ=25oC

TJ=85oC

-40-20 0 20406080

0

50

100

150

200

250

300

350

400

450

500

550

I

OUT

=250mA

I

OUT

=200mA

I

OUT

=150mA

I

OUT

=100mA

AP2138-3.3

Dropout Voltage (mV)

Junction Temperature (oC)

I

OUT

=10mA

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Typical Performance Characteristics (Continued)

Figure 12. Dropout Voltage vs. Output Current

V

IN

500mV

V

OUT

200mV/div

Time 100μs/div

Figure 14. Line transient (VIN=4.3 to 5.3V, I

OUT

=10mA)

Figure 13. Dropout Voltage vs. Junction Temperature

V

OUT

1V/div

I

OUT

50mA/div

Time 2ms/div

Figure 15. Load transient (V

=4.3V, I

IN

=1mA to150mA)

OUT

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

19

Data Sheet

Time 200μs/div

Time 200μs/div

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Typical Performance Characteristics (Continued)

V

V

1V/div

V

OUT

1V/div

IN

V

1V/div

Figure 16. Start-up Response

IN

1V/div

OUT

Figure 17. Enable Input Response

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

20

Data Sheet

V

IN

AP2138-1.4

C

IN

1μF

C

OUT

1μF

V

OUT

V

IN

V

OUT

GND

VIN=2.4V

V

OUT

=1.4V

V

IN

AP2139-3.0

C

IN

1μF

C

OUT

1μF

V

OUT

V

IN

V

OUT

GND

CE

NC

V

OUT

=3VVIN=4V

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Typical Application

Note: Filter capacitors are required at the AP2138/2139's input and output. 1μF capacitor is required at the input.
The minimum output capacitance required for stability should be more than 1μF with ESR from 0.01Ω to 100Ω.
Ceramic capacitors are recommended.

Figure 18. Typical Application of AP2138/2139

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

21

Data Sheet

2.820(0.111)

3.020(0.119)

2.650(0.104)

2.950(0.116)

0.950(0.037)
TYP

0.300(0.012)

0.500(0.020)

1.500(0.059)

1.700(0.067)

1.800(0.071)

2.000(0.079)

0.300(0.012)

0.600(0.024)

0.100(0.004)

0.200(0.008)

0.000(0.000)

0.150(0.006)

0.900(0.035)

1.300(0.051)

1.450(0.057)

MAX.

0.200(0.008)

0
8

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Mechanical Dimensions

SOT-23-3 Unit: mm(inch)

°

°

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

22

Data Sheet

2.820(0.111)

2

.

6

5

0

(

0

.

1

0

4

)

1

.

5

0

0

(

0

.

0

5

9

)

0

.

0

0

0

(

0

.

0

0

0

)

0.300(0.012)

0.950(0.037)

0

.

9

0

0

(

0

.

0

3

5

)

0.100(0.004)

0.200(0.008)

0

.

3

0

0

(

0

.

0

1

2

)

8°

0°

3.020(0.119)

1

.

7

0

0

(

0

.

0

6

7

)

2

.

9

5

0

(

0

.

1

1

6

)

0.400(0.016)

0

.

1

5

0

(

0

.

0

0

6

)

1

.

3

0

0

(

0

.

0

5

1

)

0.200(0.008)

0

.

6

0

0

(

0

.

0

2

4

)

1.800(0.071)

2.000(0.079)

0

.

7

0

0

(

0

.

0

2

8

)

R

E

F

T

Y

P

1

.

4

5

0

(

0

.

0

5

7

)

M

A

X

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Mechanical Dimensions (Continued)

SOT-23-5 Unit: mm(inch)

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

23

Data Sheet

45

1.030(0.041)REF

1.550(0.061)REF

4.400(0.173)

4.600(0.181)

0.900(0.035)

1.100(0.043)

3.950(0.156)

4.250(0.167)

3.000(0.118)
TYP

0.480(0.019)

2.300(0.091)

2.600(0.102)

0.320(0.013)

0.520(0.020)

3

10

2.060(0.081)REF

1.400(0.055)

1.600(0.063)

0.350(0.014)

0.450(0.018)

R0.150(0.006)

3

10

1.500(0.059)

0.320(0.013)REF

1.620(0.064)REF

2.210(0.087)REF

0.320(0.013)

0.520(0.020)

1.800(0.071)

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139

Mechanical Dimensions (Continued)

SOT-89 Unit: mm(inch)

Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited

24

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

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