Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
General Description
The AP2129 is a 300mA, positive Voltage regulator
ICs fabricated by CMOS process. The AP2129
provides two kinds of output voltage operation modes
for setting the output voltage. Fixed output voltage
mode senses the output voltage on V
output voltage mode needs two resistors as a voltage
divider
The AP2129 series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which
use in various battery-powered devices.
AP2129 has 1.0V, 1.2V, 1.8V, 2.6V, 2.8V, 3.0V and
3.3V fixed voltage version and 0.8V to 4.5V adjustable
voltage version.
The AP2129 series are available in DFN-1.5x2-6
(1.0V, 1.2V, 1.8V, 2.6V, 2.8V, 3.0V, 3.3V) and SOT-235 (1.0V, 1.2V, 3.3V, ADJ) packages.
make them ideal for
, adjustable
OUT
Features
· Wide Operating Voltage: 1.8V to 6V
· High Output Voltage Accuracy: ±2%
· High Ripple Rejection:
65dB@ f=1kHz, 45dB@ f=10kHz
· Low Standby Current: 0.1μA
· Low Quiescent Current: 60μA Typical
· Low Output Noise: 60μVrms
· Short Current Limit: 50mA
· Over Temperature Protection
· Compatible with Low ESR Ceramic Capacitor:
1μF for C
· Excellent Line/Load Regulation
Soft Start Time: 50μs
·
· Auto Discharge Resistance: R
and C
IN
OUT
DS(ON)
=60Ω
Applications
· Datacom
· Notebook Computers
· Mother Board
DFN-1.5x2-6
Figure 1. Package Type of AP2129
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
1
SOT-23-5
Data Sheet
1
2
34
5
Pin 1 Mark
1
2
34
5
6
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Pin Configuration
DN Package
(DFN-1.5x2-6)
V
IN
GND
Shutdown
Pin Description
Pin Number
DFN-1.5x2-6 SOT-23-5
V
OUT
NC
NC
GND
V
IN
Figure 2. Pin Configuration of AP2129 (Top View)
Pin Name Function
K Package
(SOT-23-5)
ADJ/NCShutdown
V
OUT
13V
IN
Input Voltage
2 2 GND Ground
3 1 Active High Enable Input Pin. Logic high=enable, logic low=shut-
Shutdown
down
4, 5 NC No Connection
5 ADJ/NC Adjust Output for ADJ version/No Connection for Fixed Version
64V
OUT
Regulated Output Voltage
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
2
Data Sheet
UVLO &
Shutdown Logic
Thermal
Shutdown
Foldback
Current Limit
V
REF
GND
Shutdown
ADJ
V
OUT
V
IN
3MΩ
UVLO &
Shutdown Logic
Thermal
Shutdown
Foldback
Current Limit
V
REF
GND
Shutdown
NC
V
OUT
V
IN
3MΩ
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2129
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Ordering Information
AP2129 -
Circuit Type
G1: Green
TR: Tape and Reel
Package
K: SOT-23-5
DN: DFN-1.5x2-6
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
1.8: Fixed Output 1.8V
2.6: Fixed Output 2.6V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
Package Temperature Range Part Number Marking ID Packing Type
AP2129K- ADJTRG1 GEJ Tape & Reel
SOT-23-5
-40 to 85
o
C
AP2129K-1.0TRG1 GEK Tape & Reel
AP2129K-1.2TRG1 GEL Tape & Reel
AP2129K-3.3TRG1 GEM
AP2129DN-1.0TRG1 LA
Tap e & Reel
Tap e & Reel
AP2129DN-1.2TRG1 MA
AP2129DN-1.8TRG1 LB
DFN-1.5x2-6
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
-40 to 85
o
C
AP2129DN-2.6TRG1 MB
AP2129DN-2.8TRG1 LC
AP2129DN-3.0TRG1 MC
AP2129DN-3.3TRG1 LD
Tap e & Reel
Tap e & Reel
Tap e & Reel
Tap e & Reel
Tap e & Reel
Tap e & Reel
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
4
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Input Voltage V
Shutdown Input Voltage V
Output Current I
Junction Temperature T
Storage Temperature Range T
Lead Temperature (Soldering, 10sec) T
Thermal Resistance (Junction to Ambient)
IN
CE
OUT
J
STG
LEAD
θ
JA
DFN-1.5x2-6 100
6.5 V
-0.3 to VIN+0.3 V
450 mA
150
-65 to 150
260
o
C/W
o
C
o
C
o
C
SOT-23-5 250
ESD (Human Body Model) ESD 6000 V
ESD (Machine Model) ESD 200 V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Input Voltage V
Operating Ambient Temperature Range T
IN
A
5
1.8 6 V
-40 85
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 6
o
C
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Electrical Characteristics
AP2129-1.0/1.2/1.8/2.6/2.8/3.0/3.3 Electrical Characteristics
(CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current I
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Output Current Limit
Short Current Limit I
Soft Start Time t
RMS Output Noise V
Shutdown
=1μF,
OUT
Bold typeface applies over -40oC≤TJ≤
V
OUT
IN
OUT(MAX)
ΔV
OUT
/(ΔI
OUT*VOUT
ΔV
/(ΔVIN*V
V
I
OUT
DROP
Q
STD
OUT
)
)
85oC,
unless otherwise specified.
VIN=V
1mA≤I
V
1mA≤I
V
I
OUT
V
V
V
V
I
OUT
VIN=V
VIN=V
V
+1V, (Note 2)
OUT
≤300mA
OUT
=1V, (Note 2)
IN-VOUT
≤300mA
OUT
+0.5V≤VIN≤6V, (Note 2)
OUT
=30mA
=1.0V, I
OUT
OUT
OUT
OUT
OUT
=1.2V, I
OUT
=1.8V, I
OUT
=2.6V/2.8V/3.0V/3.3V,
=300mA
+1V, I
OUT
+1V,
OUT
SHUTDOWN
in off mode
98%*
V
OUT
102%*
V
OUT
1.8 6 V
450 mA
1.5 %/A
0.06 %/V
=300mA 800
=300mA 600
=300mA 600 700
170 300
=0mA 60 90 μA
OUT
0.1 1.0 μA
mV
f=100Hz 65 dB
PSRR
Ripple 1Vp-p
V
IN=VOUT
+1V
f=1KHz 65 dB
f=10KHz 45 dB
(ΔV
OUT/VOUT
I
LIMIT
SHORT
/ΔT
UP
NOISE
)
=30mA,
I
OUT
VIN-V
V
OUT
-40oC≤TJ≤
=1V, V
OUT
=0V 50 mA
TA=25oC, 10Hz ≤f≤100kHz
OUT
85oC
=0.98*V
OUT
±100
ppm/
400 mA
50 μs
60 μVr ms
"High" Voltage Shutdown input voltage "High" 1.5 6 V
V
o
C
Shutdown
V
R
Shutdown
Thermal Shutdown 165
Thermal Shutdown Hysteresis 30
Thermal Resistance
"Low" Voltage Shutdown input voltage "Low" 0 0.4 V
Discharge MOSFET
OUT
DS(ON)
Shutdown input voltage "Low" 60 Ω
Pull Down Resistance 3MΩ
θ
JC
DFN-1.5x2-6 20
SOT-23-5 150
o
C/W
o
C
o
C
Note 2: VIN=2.8V for 1.0 and 1.2 version
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
6
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Electrical Characteristics (Continued)
AP2129-ADJ Electrical Characteristics
(CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Reference Voltage
OUT
=1μF,
Bold typeface applies over -40oC≤TJ≤
V
REF
VIN=1.8V
1mA≤I
OUT
85oC,
unless otherwise specified.)
≤300mA
0.748 0.8 0.816 V
Input Voltage V
Maximum Output Current
Load Regulation
Line Regulation
I
OUT(MAX)
ΔV
/(ΔI
OUT*VOUT
ΔV
/(ΔVIN*V
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
(ΔV
PSRR
OUT/VOUT
Temperature Coefficient
Output Current Limit
I
Short Current Limit I
Soft Start Time t
RMS Output Noise
Shutdown
"High" Voltage Shutdown input voltage "High" 1.5 6 V
V
IN
OUT
OUT
I
Q
I
STD
/ΔT
LIMIT
SHORT
UP
NOISE
V
IN-VOUT
)
1mA≤I
OUT
V
+0.5V≤VIN≤6V
OUT
OUT
)
=30mA
I
OUT
VIN=V
OUT
VIN=V
OUT
V
SHUTDOWN
Ripple 1Vp-p
V
IN=VOUT
)
=30mA,
I
OUT
V
=0V 50 mA
OUT
TA=25oC, 10Hz ≤f≤100kHz
=1V,
≤300mA
+1V, I
OUT
+1V,
in off mode
+1V
-40oC≤TJ≤
1.8 6 V
450 mA
1.5 %/A
0.06 %/V
=0mA
60 90 μA
0.1 1.0 μA
f=100Hz 65 dB
f=1KHz 65 dB
f=10KHz 45 dB
85oC
±100
ppm/
400 mA
50 μs
60 μVrm s
o
C
Shutdown
V
R
Shutdown
"Low" Voltage Shutdown input voltage "Low" 0 0.4 V
Discharge MOSFET
OUT
DS(ON)
Shutdown input voltage "Low" 60 Ω
Pull Down Resistance 3MΩ
Thermal Shutdown 165
Thermal Shutdown Hysteresis 30
Thermal Resistance
θ
JC
DFN-1.5x2-6 20
SOT-23-5 150
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 6
7
o
o
C
o
C
C/W
Data Sheet
0 50 100 150 200 250 300 350 400 450 500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Output Voltage (V)
Output Current (mA)
TC=-40oC
TC=25oC
TC=125oC
V
IN
=4.4V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
10
20
30
40
50
60
70
80
90
100
TC=25oC
V
OUT
=0.8V
No Load
Supply Current (μA)
Input Voltage(V)
0.00 0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27 0.30
40
50
60
70
80
90
100
110
120
V
OUT
=0.8V
V
IN
=1.8V
T
C
=25oC
Supply Current (μA)
Output Current (A)
-40-200 20406080
40
42
44
46
48
50
52
54
56
58
60
V
OUT
=0.8V
V
IN
=1.8V
No Load
Supply Current (μA)
Case Temperature(oC)
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Typical Performance Characteristics
Figure 4. Output Voltage vs. Output Current Figure 5. Supply Current vs. Input Voltage
Figure 6. Supply Current vs. Output Current Figure 7. Supply Current vs. Case Temperature
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
8
Data Sheet
-30-150 1530456075
0
40
80
120
160
200
240
280
320
V
OUT
=0.8V
V
IN
=1.8V
Ouput short to GND
Short Current (mA)
Case Temperature (oC)
-30-150 1530456075
0.70
0.72
0.74
0.76
0.78
0.80
0.82
0.84
0.86
0.88
0.90
V
OUT
=0.8V
V
IN
=1.8V
Output Voltage (V)
Case Temperature (oC)
IO=10mA
IO=150mA
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 .35 0.40 0.45 0.50 0.55 0.6 0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
OUT
=0.8V
V
IN
=1.8V
Output Voltage (V)
Output Current (A)
TC=-40oC
TC=125oC
TC=25oC
0.00.51.01.52.02.5 3.03.54.04.55.05.56.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
OUT
=0.8V
No Load
Output Voltage (V)
Input Voltage(V)
TC=-40oC
TC=25oC
TC=125oC
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Typical Performance Characteristics (Continued)
Figure 8. Short Current vs. Case Temperature Figure 9. Output Voltage vs. Case Temperature
Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Input Voltage
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 6
9
Data Sheet
0123456
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Output Voltge (V)
Input Voltage (V)
TC=-40oC
TC=25oC
TC=85oC
V
OUT
=0.8V
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Typical Performance Characteristics (Continued)
I
OUT
V
OUT
Figure 12. Output Voltage vs. Input Voltage
(I
=300mA)
OUT
I
OUT
V
OUT
Figure 14. Load Transient
(Conditions: C
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
IN=COUT
=1μF, VIN=4.4V, V
Figure 13. Load Transient
(Conditions: C
V
IN
V
OUT
IN=COUT
=1μF, VIN=2.5V, V
OUT
=0.8V)
Figure 15. Line Transient
=3.3V)
OUT
(Conditions: I
=2.5 to 3.5V, V
V
IN
=30mA, CIN=C
OUT
OUT
OUT
=0.8V)
=1μF,
10
Data Sheet
100 1000 10000 100000
0
10
20
30
40
50
60
70
80
90
100
PSRR (dB)
Frequency (Hz)
I
OUT
=10mA
I
OUT
=300mA
ripple=1Vpp, C
OUT
=1μF, V
OUT
=0.8V
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Typical Performance Characteristics (Continued)
V
IN
V
OUT
V
V
OUT
Shutdown
Figure 16. Line Transient
V
V
Shutdown
OUT
(Conditions: I
=4 to 5V, V
V
IN
=30mA, CIN=C
OUT
OUT
=3.3V)
OUT
=1μF,
Figure 18. Soft Start Time
(Conditions: I
V
Shutdown
=0mA, CIN=C
OUT
=0 to 2V, V
OUT
OUT
=0.8V)
=1μF,
11
Figure 17. Soft Start Time
(Conditions: I
V
Shutdown
=0mA, CIN=C
OUT
=0 to 2V, V
OUT
Figure 19. PSRR vs. Frequency
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 6
OUT
=3.3V)
=1μF,
Data Sheet
100 1000 10000 100000
0
10
20
30
40
50
60
70
80
90
100
PSRR (dB)
Frequency (Hz)
I
OUT
=10mA
I
OUT
=300mA
ripple=1Vpp, C
OUT
=1μF, V
OUT
=3.3V
-40-200 20406080100120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Power Dissipation (W)
Case Temperature (oC)
V
OUT
=0.8V
No heatsink
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Typical Performance Characteristics (Continued)
Figure 20. PSRR vs. Frequency
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Figure 21. Power Dissipation vs. Case Temperature
12
Data Sheet
V
IN
V
IN
V
OUT
V
OUT
Shutdown
GND
C
OUT
1μF
C
IN
1μF
AP2129
V
IN
V
IN
V
OUT
V
OUT
ADJShutdown
GND
C
OUT
1μF
C
IN
1μF
R1
R2
AP2129
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Typical Application
V
=0.8*(1+R1/R2) V
OUT
V
=1.0V, 1.2V, 1.8V, 2.6V, 2.8V, 3.0V, 3.3V
OUT
Figure 22. Typical Application of AP2129
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 6
13
Data Sheet
1.424(0.056)
1.576(0.062)
1.924(0.076)
2.076(0.082)
0.500(0.020)
TYP.
0.200(0.008)
MIN.
0.174(0.007)
0.326(0.013)
0.800(0.031)
1.000(0.039)
1.000(0. 039)
1.200(0. 047)
0.200(0.008)
0.300(0.012)
Pin 1 Mark
0.350(0. 014)
0.450(0. 018)
0.127(0.005)
REF
0.000(0.000)
0.050(0.002
)
N1N3
N4 N6
1
DETAIL A
Pin 1 options
2
PIN #
1 IDENTIFICATION
See DETAIL A
12
12
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Mechanical Dimensions
DFN-1.5x2-6 Unit: mm(inch)
Sep. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
14
Data Sheet
2.820(0.111)
2
.
6
5
0
(
0
.
1
0
4
)
1
.
5
0
0
(
0
.
0
5
9
)
0
.
0
0
0
(
0
.
0
0
0
)
0.300(0.012)
0.950(0.037)
0
.
9
0
0
(
0
.
0
3
5
)
0.100(0.004)
0.200(0.008)
0
.
3
0
0
(
0
.
0
1
2
)
8°
0°
3.020(0.119)
1
.
7
0
0
(
0
.
0
6
7
)
2
.
9
5
0
(
0
.
1
1
6
)
0.400(0.016)
0
.
1
5
0
(
0
.
0
0
6
)
1
.
3
0
0
(
0
.
0
5
1
)
0.200(0.008)
0
.
6
0
0
(
0
.
0
2
4
)
1.800(0.071)
2.000(0.079)
0
.
7
0
0
(
0
.
0
2
8
)
R
E
F
T
Y
P
1
.
4
5
0
(
0
.
0
5
7
)
M
A
X
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129
Mechanical Dimensions (Continued)
SOT-23-5 Unit: mm(inch)
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 6
15
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufactur ing Limited
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Tel: +86-21-24162266, Fax: +86-21-24162277
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Shenzhen Office
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BCD Semiconductor (Taiwan) Company Limited
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BCD Semiconductor (Taiwan) Company Limited
Tai wan
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel: +886-2-2656 2808
Taiwan
Fax: +886-2-2656 2806
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988
Fax: +1-510-324-2788
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