Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
General Description
The AP2126 series are positive voltage regulator ICs
fabricated by CMOS process.
The AP2126 series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which
use in various battery-powered devices.
AP2126 is available in 1.25V to 5.5V adjustable
voltage versions.
AP2126 series are available in SOT-23-5 Package.
make them ideal for
Features
· Wide Operating Voltage: 3.0V to 6V
· High Output Voltage Accuracy: ±2%
· High Ripple Rejection:
68dB@ f=1kHz, 54dB@ f=10kHz
· Low Standby Current: 0.1μA
· Low Dropout Voltage: 170mV@300mA for
=3.3V, 140mV@300mA for V
V
OUT
OUT
=5.2V
· Low Quiescent Current: 60μA Typical
· Low Output Noise: 80μVrms@ V
OUT
=1.25V
· Short Current Limit: 50mA
· Over Temperature Protection
· Compatible with Low ESR Ceramic Capacitor:
1μF for C
and C
IN
OUT
· Excellent Line/Load Regulation
· Soft Start Time: 50μs
· Auto Discharge Resistance: R
DS(ON)
=60Ω
Applications
· Datacom
· Notebook Computers
· Mother Board
SOT-23-5
Figure 1. Package Type of AP2126
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
1
Data Sheet
1
2
34
5
Shutdown
and
Logic Control
Current Limit
And
Thermal
Protection
MOS Driver
V
REF
Shutdown
GND
V
IN
V
OUT
ADJ
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Pin Configuration
K Package
(SOT-23-5)
Figure 2. Pin Configuration of AP2126 (Top View)
Functional Block Diagram
V
GND
IN
V
OUT
ADJShutdown
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
Figure 3. Functional Block Diagram of AP2126
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Ordering Information
AP2126 -
Circuit Type
G1: Green
TR: Tape and Reel
Package
ADJ: ADJ Output
K: SOT-23-5
Package Temperature Range Part Number Marking ID Packing Type
SOT-23-5
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
-40 to 85
o
C
AP2126K-ADJTRG1 GHH Tape & Reel
Sep. 2012 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Input Voltage V
Shutdown Input Voltage V
Output Current I
Junction Temperature T
Storage Temperature Range T
Lead Temperature (Soldering, 10sec) T
Thermal Resistance (Junction to Ambient) θ
IN
CE
OUT
J
STG
LEAD
JA
6.5 V
-0.3 to VIN+0.3 V
450 mA
o
C/W
o
o
o
150
-65 to 150
260
250
C
C
C
ESD (Human Body Model) ESD 6000 V
ESD (Machine Model) ESD 250 V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Input Voltage V
Operating Ambient Temperature Range T
IN
A
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
4
3.0 6 V
-40 85
o
C
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Electrical Characteristics
(AP2126-ADJ, V
min=3.0V, CIN=1μF, C
IN
OUT
=1μF,
Bold typeface applies over -40oC≤TA≤
85oC,
unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
OUT
VIN=3.0V
1mA≤I
VIN=3.0V,
V
OUT
V
IN
1mA≤I
)
V
IN
)
I
OUT
VIN=3.0V, I
VIN=3.0V,
V
SHUTDOWN
≤300mA
OUT
=98%×V
=3.0V,
≤300mA
OUT
=3.0V to 6V
=30mA
OUT
in off mode
1.225 1.25 1.275 V
3.0 6 V
OUT
300 400 mA
0.6 %/A
0.06 %/V
=0mA 60 90 μA
0.1 1.0 μA
Reference Voltage
V
Input Voltage V
Maximum Output Current
Load Regulation
Line Regulation
I
OUT(MAX)
ΔV
/(ΔI
OUT*VOUT
ΔV
/(ΔVIN*V
Quiescent Current I
Standby Current
I
STD
REF
IN
OUT
OUT
Q
f=100Hz 68 dB
Power Supply
Rejection Ratio
PSRR
Ripple 1Vp-p
=3.5V
V
IN
f=1KHz 68 dB
f=10KHz 54 dB
Output Voltage
Temperature Coefficient
(ΔV
OUT/VOUT
/ΔT
)
I
OUT
=30mA,
-40oC≤TA≤
85oC
±100
ppm/
o
C
V
Short Current Limit I
Soft Start Time t
RMS Output Noise
Shutdown
Shutdown
V
R
Shutdown
"High" Voltage Shutdown input voltage "High" 1.5 6 V
"Low" Voltage Shutdown input voltage "Low" 0 0.4 V
Discharge MOSFET
OUT
DS(ON)
Pull Down Resis-
V
SHORT
UP
NOISE
=0V 50 mA
OUT
50 μs
TA=25oC, 10Hz ≤f≤100kHz,
=1.25V
V
OUT
80
Shutdown input voltage "Low" 60 Ω
tance
Thermal Shutdown 165
Thermal Shutdown Hysteresis 30
Thermal Resistance
Sep. 2012 Rev. 1. 5
θ
JC
SOT-23-5 150
BCD Semiconductor Manufacturing Limited
μVrm s
3MΩ
o
C
o
C
o
C/W
5
Data Sheet
0.00.10.20.30.40.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Output Voltage (V)
Output Current (A)
TC=-40oC
TC=25oC
TC=85oC
V
IN
=4.3V, V
OUT
=3.3V
0.0 0.1 0.2 0.3 0.4 0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Output Voltage (V)
Output Current (A)
VIN=3.8V
VIN=4.3V
VIN=6V
T
C
=250C, V
OUT
=3.3V
50 100 150 200 250 300
0
20
40
60
80
100
120
140
160
180
200
220
240
Dropout Voltage (mV)
Output Current (mA)
TC=-40oC
TC=25oC
TC=85oC
V
OUT
=3.3V
-40-200 20406080
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
Dropout Voltage (V)
Case Temperature (oC)
I
OUT
=10mA
I
OUT
=150mA
I
OUT
=300mA
V
IN
=4.3V, V
OUT
=3.3V
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Typical Performance Characteristics
Figure 4. Output Voltage vs. Output Current
Figure 6. Dropout Voltage vs. Output Current
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
Figure 5. Output Voltage vs. Output Current
Figure 7. Dropout Voltage vs. Case Temperature
6
Data Sheet
0 50 100 150 200 250 300
65
70
75
80
85
90
95
100
105
110
115
Quiescent Current (μA)
Output Current (mA)
TC=-40oC
TC=25oC
TC=85oC
V
IN
=4.3V, V
OUT
=3.3V
-40-200 20406080100120
62
63
64
65
66
67
68
69
70
71
Quiescent Current (μA)
Case Temperature (oC)
I
OUT
=0
V
IN
=4.3V
V
OUT
=3.3V
0123456
0
10
20
30
40
50
60
70
80
Quiescent Current (μA)
Input Voltage (V)
TC=25oC
I
OUT
=0
V
OUT
=3.3V
-40 -20 0 20 40 60 80 100 120
3.326
3.328
3.330
3.332
3.334
3.336
3.338
3.340
3.342
3.344
3.346
3.348
Output Voltage (V)
Case Temperature (oC)
I
OUT
=10mA
V
IN
=4.3V
V
OUT
=3.3V
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Typical Performance Characteristics (Continued)
Figure 8. Quiescent Current vs. Output Current
Figure 10. Quiescent Current vs. Input Voltage
Sep. 2012 Rev. 1. 5
Figure 9. Quiescent Current vs. Case Temperature
Figure 11. Output Voltage vs. Case Temperature
BCD Semiconductor Manufacturing Limited
7
Data Sheet
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Output Voltage (V)
Input Voltage (V)
TC=-40oC
TC=25oC
TC=85oC
I
OUT
=0, V
OUT
=3.3V
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Typical Performance Characteristics (Continued)
I
OUT
V
OUT
Figure 12. Output Voltage vs. Input Voltage
V
IN
V
OUT
Figure 14. Line Transient
(Conditions: I
=4 to 5V, V
V
IN
=30mA, CIN=C
OUT
OUT
=3.3V)
OUT
=1μF,
V
V
Shutdown
(Conditions: C
I
OUT
(Conditions: I
Figure 13. Load Transient
IN=COUT
OUT
=1μF, VIN=4.4V, V
=10mA to 300mA)
Figure 15. Soft Start Time
=0mA, CIN=C
OUT
V
Shutdown
=0 to 2V, V
OUT
=1μF,
OUT
=3.3V)
OUT
=3.3V
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
8
Data Sheet
100 1000 10000 100000
0
10
20
30
40
50
60
70
80
90
100
PSRR (dB)
Frequency (Hz)
I
OUT
=10mA
I
OUT
=300mA
ripple=1Vpp, C
OUT
=1μF, V
OUT
=3.3V
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Typical Performance Characteristics (Continued)
Figure 16. PSRR vs. Frequency
Sep. 2012 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
9
Data Sheet
V
IN
V
IN
V
OUT
V
OUT
ADJShutdown
GND
C
OUT
1μF
C
IN
1μF
R1
R2
AP2126
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Typical Application
V
=1.25*(1+R1/R2) V
OUT
Figure 17. Typical Application of AP2126
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
10
Data Sheet
2.820(0.111)
2
.
6
5
0
(
0
.
1
0
4
)
1
.
5
0
0
(
0
.
0
5
9
)
0
.
0
0
0
(
0
.
0
0
0
)
0.300(0.012)
0.950(0.037)
0
.
9
0
0
(
0
.
0
3
5
)
0.100(0.004)
0.200(0.008)
0
.
3
0
0
(
0
.
0
1
2
)
8°
0°
3.020(0.119)
1
.
7
0
0
(
0
.
0
6
7
)
2
.
9
5
0
(
0
.
1
1
6
)
0.400(0.016)
0
.
1
5
0
(
0
.
0
0
6
)
1
.
3
0
0
(
0
.
0
5
1
)
0.200(0.008)
0
.
6
0
0
(
0
.
0
2
4
)
1.800(0.071)
2.000(0.079)
0
.
7
0
0
(
0
.
0
2
8
)
R
E
F
T
Y
P
1
.
4
5
0
(
0
.
0
5
7
)
M
A
X
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
Mechanical Dimensions
SOT-23-5 Unit: mm(inch)
Sep. 2012 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
11
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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