Diodes AP2125 User Manual

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

General Description

The AP2125 series are 300mA, positive voltage regu­lator ICs fabricated by CMOS process.

Each of these ICs is equipped with a voltage reference,
an error amplifier, a resistor network for setting output
voltage, a chip enable circuit, a current limit circuit and
OTSD (over temperature shut down) circuit to prevent
the IC from over current and over temperature.

The AP2125 series have features of high ripple rejec­tion, low dropout voltage, low noise, high output volt­age accuracy and low current consumption which
make them ideal for use in various battery-powered
apparatus.

The AP2125 have 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.15V
and 4.2V fixed voltage versions.

These ICs are available in tiny SC-70-5 and SC-82
packages as well as industry standard SOT-23-3 and
SOT-23-5 packages.

Features

· Excellent Ripple Rejection: 70dB Typical (1.8V

Version)

· Low Dropout Voltage: 65mV (I

3.3V Version)

· Low Standby Current: 0.01µA Typical

· Low Quiescent Current: 60µA Typical

· Extremely Low Noise: 50µVrms Typical

· Maximum Output Current: 300mA (Min.)

· High Output Voltage Accuracy:

· Compatible with Low ESR Ceramic Capacitor

· Excellent Line/Load Regulation

±2%

OUT

=100mA,

Applications

· CDMA/GSM Cellular Handsets

· Battery-powered Equipments

· Laptops, Palmtops, Notebook Computers

· Hand-held Instruments

· PCMCIA Cards

· Portable Information Appliances

SOT-23-3 SOT-23-5 SC-70-5

Figure 1. Package Types of AP2125

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

1

SC-82

Data Sheet

3

2

1

V

IN

GND

V

OUT

1

2

34

5 V

OUT

NC

CE

GND

V

IN

1

2

3

4

CE

GND V

OUT

V

IN

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Pin Configuration

N Package

(SOT-23-3)

K/KS Package

KC Package

(SOT-23-5/SC-70-5)

Figure 2. Pin Configuration of AP2125 (Top View)

(SC-82)

Pin Description

Pin Number

Pin Name Function

SOT-23-3 SOT-23-5/

SC-70-5

314V

1 2 2 GND Ground

3 1 CE Active high enable input pin. Logic high=enable, logic low=shutdown

4 NC No connection

253V

SC-82

IN

OUT

Input voltage

Regulated output voltage

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

2

Data Sheet

V

REF

Shutdown

and

Logic Control

MOS Driver

Current Limit

and

Thermal Protection

V

REF

Shutdown

and

Logic Control

MOS Driver

Current Limit

and

Thermal

Protection

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Functional Block Diagram

3 (1)

3

V

IN

CE

1 (4)

V

IN

SOT-23-3

2

V

OUT

1

GND

A(B)
A SOT-23-5/SC-70-5

B SC-82

Figure 3. Functional Block Diagram of AP2125

5 (3)

2 (2)

V

OUT

GND

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

3

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Ordering Information

AP2125 -

Package

SOT-23-3

SOT-23-5

SC-70-5

SC-82

Circuit Type

Package

N: SOT-23-3
K: SOT-23-5
KS: SC-70-5
KC: SC-82

Temperature

Range

o

-40 to 85

-40 to 85

-40 to 85

-40 to 85

C

o

C

o

C

o

C

E1: Lead Free
G1: Green

TR: Tape and Reel

1.8: Fixed Output 1.8V

2.5: Fixed Output 2.5V

2.8: Fixed Output 2.8V

3.0: Fixed Output 3.0V

3.3: Fixed Output 3.3V

4.15: Fixed Output 4.15V

4.2: Fixed Output 4.2V

Part Number Marking ID

Lead Free Green Lead Free Green

AP2125N-1.8TRE1 AP2125N-1.8TRG1 EJ2 GJ2 Tape & Reel

AP2125N-2.5TRE1 AP2125N-2.5TRG1 EJ4 GJ4 Tape & Reel

AP2125N-2.8TRE1 AP2125N-2.8TRG1 EJ5 GJ5 Tape & Reel

AP2125N-3.0TRE1 AP2125N-3.0TRG1 EJ6 GJ6 Tape & Reel

AP2125N-3.3TRE1 AP2125N-3.3TRG1 EJ7 GJ7 Tape & Reel

AP2125N-4.2TRE1 AP2125N-4.2TRG1 EJ3 GJ3 Tape & Reel

AP2125K-1.8TRE1 AP2125K-1.8TRG1 ECB GCB Tape & Reel

AP2125K-2.5TRE1 AP2125K-2.5TRG1 ECD GCD Tape & Reel

AP2125K-2.8TRE1 AP2125K-2.8TRG1 ECE GCE Tape & Reel

AP2125K-3.0TRE1 AP2125K-3.0TRG1 ECF GCF Tape & Reel

AP2125K-3.3TRE1 AP2125K-3.3TRG1 ECG GCG Tape & Reel

AP2125K-4.15TRG1 GCJ Tape & Reel

AP2125K-4.2TRE1 AP2125K-4.2TRG1 ECC GCC Tape & Reel

AP2125KS-1.8TRE1 AP2125KS-1.8TRG1 26 B6 Tape & Reel

AP2125KS-2.5TRE1 AP2125KS-2.5TRG1 35 C5 Tape & Reel

AP2125KS-2.8TRE1 AP2125KS-2.8TRG1 27 B7 Tape & Reel

AP2125KS-3.0TRE1 AP2125KS-3.0TRG1 36 C6 Tape & Reel

AP2125KS-3.3TRE1 AP2125KS-3.3TRG1 28 B8 Tape & Reel

AP2125KS-4.2TRE1 AP2125KS-4.2TRG1 34 C4 Tape & Reel

AP2125KC-1.8TRE1 AP2125KC-1.8TRG1 91 T1 Tape & Reel

AP2125KC-2.5TRE1 AP2125KC-2.5TRG1 96 T6 Tape & Reel

AP2125KC-2.8TRE1 AP2125KC-2.8TRG1 92 T2 Tape & Reel

AP2125KC-3.0TRE1 AP2125KC-3.0TRG1 97 T7 Tape & Reel

AP2125KC-3.3TRE1 AP2125KC-3.3TRG1 93 T3 Tape & Reel

AP2125KC-4.2TRE1 AP2125KC-4.2TRG1 95 T5 Tape & Reel

Packing Type

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

4

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Input Voltage V

Enable Input Voltage V

Output Current I

Junction Temperature T

Storage Temperature Range T

Lead Temperature (Soldering, 10sec) T

LEAD

IN

CE

OUT

J

STG

6.5 V

-0.3 to VIN+0.3 V

450 mA

150

-65 to 150

260

o

o

o

C

C

C

SOT-23-3 200

Thermal Resistance

θ

JA

SC-70-5 300

SOT-23-5 200

o

C/W

SC-82 300

ESD (Human Body Model) ESD 6000 V

ESD (Machine Model) ESD 400 V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Input Voltage V

Operating Ambient Temperature Range T

IN

A

5

V

+0.5V 6 V

OUT

-40 85

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

o

C

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics
AP2125-1.8 Electrical Characteristics

(VIN=2.8V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

OUT(MAX)

V

V

=1μF,

V

OUT

IN

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=2.8V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

VIN=2.8V

OUT

≤300mA

1mA≤I

2.8V≤VIN≤6V

=30mA

I

OUT

I

=10mA 10 12

OUT

=100mA 100 120

I

OUT

=300mA 300 360

I

OUT

85oC,

unless otherwise specified.)

1.764 1.8 1.836 V

6V

=1.76V 300 360 mA

OUT

615mV

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=2.8V, I

VIN=2.8V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 70 dB

=2.8V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 70 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

6

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics (Continued)
AP2125-2.5 Electrical Characteristics

(VIN=3.5V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

OUT(MAX)

V

V

=1μF,

V

OUT

IN

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=3.5V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

VIN=3.5V

OUT

≤300mA

1mA≤I

3.5V≤VIN≤6V

=30mA

I

OUT

I

=10mA 6.5 10

OUT

=100mA 65 100

I

OUT

=300mA 200 300

I

OUT

85oC,

unless otherwise specified.)

2.45 2.5 2.55 V

6V

=2.45V 300 360 mA

OUT

10 15 mV

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=3.5V, I

VIN=3.5V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 65 dB

=3.5V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 65 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

7

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics (Continued)
AP2125-2.8 Electrical Characteristics

(VIN=3.8V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

OUT(MAX)

V

V

=1μF,

V

OUT

IN

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=3.8V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

VIN=3.8V

OUT

≤300mA

1mA≤I

3.8V≤VIN≤6V

=30mA

I

OUT

I

=10mA 6.5 10

OUT

=100mA 65 100

I

OUT

=300mA 200 300

I

OUT

85oC,

unless otherwise specified.)

2.744 2.8 2.856 V

6V

=2.74V 300 360 mA

OUT

11 15 m V

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=3.8V, I

VIN=3.8V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 65 dB

=3.8V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 65 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

8

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics (Continued)
AP2125-3.0 Electrical Characteristics

(VIN=4.0V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

OUT(MAX)

V

V

=1μF,

V

OUT

IN

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=4.0V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

VIN=4.0V

OUT

≤300mA

1mA≤I

4.0V≤VIN≤6V

=30mA

I

OUT

I

=10mA 6.5 10

OUT

=100mA 65 100

I

OUT

=300mA 200 300

I

OUT

85oC,

unless otherwise specified.)

2.94 3.0 3.06 V

6V

=2.94V 300 360 mA

OUT

12 15 mV

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=4.0V, I

VIN=4.0V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 65 dB

=4.0V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 65 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

9

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics (Continued)
AP2125-3.3 Electrical Characteristics

(VIN=4.3V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

OUT(MAX)

V

V

=1μF,

V

OUT

IN

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=4.3V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

VIN=4.3V

OUT

≤300mA

1mA≤I

4.3V≤VIN≤6V

=30mA

I

OUT

I

=10mA 6.5 10

OUT

=100mA 65 100

I

OUT

=300mA 200 300

I

OUT

85oC,

unless otherwise specified.)

3.234 3.3 3.366 V

6V

=3.23V 300 360 mA

OUT

13 15 mV

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=4.3V, I

VIN=4.3V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 65 dB

=4.3V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 65 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

10

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics (Continued)
AP2125-4.15 Electrical Characteristics

(VIN=5.15V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

V

V

Dropout Voltage

=1μF,

OUT

V

OUT

IN

OUT(MAX)

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=5.15V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

OUT

VIN=5.15V

OUT

≤300mA

1mA≤I

5.15V≤VIN≤6V

=30mA

I

OUT

I

=10mA 6.5 10

OUT

=100mA 65 100

I

OUT

=300mA 200 300

I

OUT

85oC,

unless otherwise specified.)

4.067 4.15 4.233 V

6V

=4.06V 300 360 mA

13 15 mV

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=5.15V, I

VIN=5.15V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 65 dB

=5.15V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 65 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

11

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Electrical Characteristics (Continued)
AP2125-4.2 Electrical Characteristics

(VIN=5.2V, TA=25oC, CIN=1μF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Maximum Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

OUT(MAX)

V

V

=1μF,

V

OUT

IN

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=5.2V

1mA≤I

VIN-V

OUT

OUT

≤30mA

=1V, V

VIN=5.2V

OUT

≤300mA

1mA≤I

5.2V≤VIN≤6V

=30mA

I

OUT

I

=10mA 6.5 10

OUT

=100mA 65 100

I

OUT

=300mA 200 300

I

OUT

85oC,

unless otherwise specified.)

4.116 4.2 4.284 V

6V

=4.12V 300 360 mA

OUT

13 15 mV

115mV

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

Output Voltage
Temperature Coefficient

(ΔV

OUT/VOUT

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

SHORT

V

NOISE

Q

VIN=5.2V, I

VIN=5.2V

V

Ripple 0.5Vp-p
V

)/ΔTI

OUT

V

10Hz ≤f≤100kHz

in OFF mode

CE

OUT

=0mA

60 90

0.01 1.0

f=100Hz 65 dB

=5.2V

IN

=30mA

=0V 50 mA

OUT

f=1KHz 65 dB

±100

50

μA

μA

ppm/

μVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.4 V

Thermal Shutdown 160

Thermal Shutdown Hyster­esis

25

o

o

o

C

C

C

12

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

Data Sheet

0 50 100 150 200 250 300

1.70

1.72

1.74

1.76

1.78

1.80

1.82

1.84

1.86

1.88

1.90

AP2125-1.8
VIN=2.8V

TC=25oC

Output Voltage (V)

Output Current (mA)

0 50 100 150 200 250 300

3.30

3.32

3.34

3.36

3.38

3.40

3.42

3.44

3.46

3.48

3.50

AP2125-3.3
VIN=4.3V

TC=25oC

Output Voltage (V)

Output Current (mA)

0 30 60 90 120 150 180 210 240 270 300

0

40

80

120

160

200

240

280

320

360

400

AP2125-1.8
VIN=2.8V

TC=-40oC

TC=25oC

TC=85oC

Dropout Voltage (mV)

Output Current (mA)

0 30 60 90 120 1 50 180 210 240 270 300

0

40

80

120

160

200

240

280

320

360

400

TC=-40oC

T

C

=25oC

TC=85oC

AP2125-3.3
V

IN

=4.3V

Dropout Voltage (mV)

Output Current (mA)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics

Figure 4. Output Voltage vs. Output Current

Figure 6. Dropout Voltage vs. Output Current

Figure 5. Output Voltage vs. Output Current

Figure 7. Dropout Voltage vs. Output Current

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

13

Data Sheet

-25 0 25 50 75

0

40

80

120

160

200

240

280

320

360

400

AP2125-1.8
V

IN

=2.8V

I

OUT

=10mA

I

OUT

=100mA

I

OUT

=200mA

I

OUT

=300mA

Dropout Voltage (mV)

Case Temperature (oC)

0 50 100 150 200 250 300 350 400 450 500

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

AP2125-1.8
T

C

=25oC

Output Voltage (V)

Output Current (mA)

VIN=2.8V

VIN=6V

-25 0 25 50 75

0

40

80

120

160

200

240

280

320

360

400

AP2125-3.3
V

IN

=4.3V

I

OUT

=10mA

I

OUT

=100mA

I

OUT

=200mA

I

OUT

=300mA

Dropout Voltage (mV)

Case Temperature (oC)

0 50 100 150 200 250 300 350 400 450 500

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

AP2125-3.3
T

C

=25oC

Output Voltage (V)

Output Current (mA)

VIN=4.3V

VIN=6V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

Figure 8. Dropout Voltage vs. Case Temperature

Figure 10. Current Limit

Figure 9. Dropout Voltage vs. Case Temperature

Figure 11. Current Limit

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

14

Data Sheet

0 50 100 150 200 250 300 350 400 450 500

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

AP2125-1.8
V

IN

=2.8V

Output Voltage (V)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

0 50 100 150 200 250 300 350 400 450 500

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

AP2125-3.3
V

IN

=4.3V

Output Voltage (V)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

AP2125-1.8
T

C

=25oC

Output Voltage (V)

Input Voltage (V)

1mA
100mA
300mA

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

AP2125-3.3
T

C

=25oC

Output Voltage (V)

Input Voltage (V)

1mA
100mA
300mA

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

Figure 12. Current Limit

Figure 13. Current Limit

Figure 14. Output Voltage vs. Input Voltage Figure 15. Output Voltage vs. Input Voltage

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

15

Data Sheet

-25 0 25 50 75

1.70

1.72

1.74

1.76

1.78

1.80

1.82

1.84

1.86

1.88

1.90

AP2125-1.8
V

IN

=2.8V

Output Voltage (V)

Case Temperature (oC)

I

OUT

=10mA

I

OUT

=30mA

I

OUT

=100mA

I

OUT

=300mA

0.00.51.01.52.02.53.03.54.04.55.05.56.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

AP2125-1.8
T

C

=25oC

No Load

Output Voltage (V)

Input Voltage (V)

TC=-40oC

TC=25oC

TC=85oC

0.00.51.01.52.02.53.03.54.04.55.05.56.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

AP2125-3.3
T

C

=25oC

No Load

Output Voltage (V)

Input Voltage (V)

TC=-40oC

TC=25oC

TC=85oC

-25 0 25 50 75

3.20

3.22

3.24

3.26

3.28

3.30

3.32

3.34

3.36

3.38

3.40

AP2125-3.3
V

IN

=4.3V

Output Voltage (V)

Case Temperature (oC)

I

OUT

=10mA

I

OUT

=30mA

I

OUT

=100mA

I

OUT

=300mA

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

Figure 16. Output Voltage vs. Input Voltage

Figure 18. Output Voltage vs. Case Temperature

Figure 17. Output Voltage vs. Input Voltage

Figure 19. Output Voltage vs. Case Temperature

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

16

Data Sheet

0123456

0

10

20

30

40

50

60

70

80

90

100

AP2125-1.8
No Load

TC=-40oC

TC=25oC

TC=85oC

Supply Current (μA)

Input Voltage (V)

0123456

0

10

20

30

40

50

60

70

80

90

100

TC=-40oC

TC=25oC

TC=85oC

AP2125-3.3
No Load

Supply Current (μA)

Input Voltage (V)

-40 -20 0 20 40 60 80

40

44

48

52

56

60

64

68

72

76

80

Supply Current (μA)

Case Temperature (oC)

AP2125-1.8
V

IN

=2.8V

No Load

-40-20 0 20406080

40

44

48

52

56

60

64

68

72

76

80

AP2125-3.3
V

IN

=4.3V

No Load

Supply Current (μA)

Case Temperature (oC)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

Figure 20. Supply Current vs. Input Voltage

Figure 22. Supply Current vs. Case Temperature

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Figure 21. Supply Current vs. Input Voltage

Figure 23. Supply Current vs. Case Temperature

17

Data Sheet

0 50 100 150 200 250 300 350 400 450 500

0

10

20

30

40

50

60

70

80

90

100

110

120

130

AP2125-1.8
V

IN

=2.8V

Supply Current (μA)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

0 50 100 150 200 250 300 350 400

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

AP2125-3.3
V

IN

=4.3V

Supply Current (μA)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

0 40 80 120 160 200 240 280 320 360 400 440 480

0

10

20

30

40

50

60

70

80

90

100

110

120

AP2125-1.8
TC=25oC

Supply Current (μA)

Output Current (mA)

VIN=2.8V

VIN=6V

0 40 80 120 160 200 240 280 320 360 400

0

15

30

45

60

75

90

105

120

135

150

AP2125-3.3
T

C

=25oC

Supply Current (μA)

Output Current (mA)

VIN=4.3V

VIN=6V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

Figure 24. Supply Current vs. Output Current

Figure 26. Supply Current vs. Output Current

Figure 25. Supply Current vs. Output Current

Figure 27. Supply Current vs. Output Current

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

18

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

4.8

3.8

( 1 V / D i v )

IN

V

2.8

0.02

0

-0.02

(0 .02 V/D iv)

OUT

V

Δ

(Conditions: I

1.84

1.82

(0.02V/Div)

OUT

1.8

V

Time (40μs/Div)

Figure 28. Line Transient

=30mA, C

OUT

=1μF, VIN=2.8 to 3.8V)

OUT

AP2125-1.8

AP2125-1.8

5

4.5

(0.5V/Div)

IN

4

V

0.05

0

(0 .05 V/D iv)

-0.05

OUT

V

Δ

(Conditions: I

3.34

3.32

(0.02V/Div)

OUT

3.3

V

Time (100μs/Div)

Figure 29. Line Transient

=30mA, C

OUT

=1μF, VIN=4 to 5V)

OUT

AP2125-3.3

AP2125-3.3

100

50

(50mA/Div)

OUT

0

I

Time (40μs/Div)

Figure 30. Load Transient

(Conditions: I

C

=10 to 100mA, CIN=1μF,

OUT

=1μF, VIN=2.8 V)

OUT

100

50

(50mA/Div)

OUT

0

I

Time (40μs/Div)

Figure 31. Load Transient

(Conditions: I

C

=10 to 100mA, CIN=1μF,

OUT

=1μF, VIN=4.3 V)

OUT

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

19

Data Sheet

10 100 1k 10k 100k

0

10

20

30

40

50

60

70

80

90

100

PSRR (dB)

Frequency (Hz)

AP2125-1.8
VIN=2.8V

I

OUT

=30mA

10 100 1k 10k 100k

0

10

20

30

40

50

60

70

80

90

100

PSRR (dB)

Frequency (Hz)

AP2125-3.3
VIN=4.3V

I

OUT

=30mA

0 50 100 150 200 250 300

0.1

1

10

100

1000

Stable Area

AP2125-1.8
C

IN

= 1μF

C

OUT

= 1μF

ESR (Ω)

Output Current (mA)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

3

2

(1V/Div)

CE

V

1

AP2125-2.8

0

3

2

(1V/Div)

OUT

1

v

0

Time (200μs/Div)

Figure 32. Enable Input Response and Auto-discharge

(Conditions: V

C

=1μF, VIN=3V, no load)

OUT

=0 to 3V, CIN=1μF,

CE

Figure 33. ESR vs. Output Current

Figure 34. PSRR

Figure 35. PSRR

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

20

Data Sheet

30 40 50 60 70 80 90 100 110 120

0

50

100

150

200

250

300

350

400

450

500

550

600

Power Dissipation (mW)

Ambient Temperature (oC)

AP2125-1.8
Package: SC-70-5
No Heatsink

30 40 50 60 70 80 90 100 110 120

0

100

200

300

400

500

600

700

800

Power Dissipation (mW)

Ambient Temperature (oC)

AP2125-3.3
Package: SC-70-5
No Heatsink

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Performance Characteristics (Continued)

Figure 36. Power Dissipation vs. Ambient Temperature

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Figure 37. Power Dissipation vs. Ambient Temperature

21

Data Sheet

V

IN

AP2125-1.8

C

IN

1μF

C

OUT

1μF

V

OUT

V

IN

V

OUT

GND

V

IN

AP2125-3.0

C

IN

1μF

C

OUT

1μF

V

OUT

V

IN

V

OUT

GND

CE

NC

VIN=2.8V

V

OUT

=1.8V

V

OUT

=3VVIN=4V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Typical Application

Figure 38. Typical Application of AP2125

22

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

Data Sheet

2.820(0.111)

3.020(0.119)

2.650(0.104)

2.950(0.116)

0.950(0.037)
TYP

0.300(0.012)

0.500(0.020)

1.500(0.059)

1.700(0.067)

1.800(0.071)

2.000(0.079)

0.300(0.012)

0.600(0.024)

0.100(0.004)

0.200(0.008)

0.000(0.000)

0.150(0.006)

0.900(0.035)

1.300(0.051)

1.450(0.057)

MAX.

0.200(0.008)

0
8

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Mechanical Dimensions

SOT-23-3 Unit: mm(inch)

°
°

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

23

Data Sheet

2.820(0.111)

2

.

6

5

0

(

0

.

1

0

4

)

1

.

5

0

0

(

0

.

0

5

9

)

0

.

0

0

0

(

0

.

0

0

0

)

0.300(0.012)

0.950(0.037)

0

.

9

0

0

(

0

.

0

3

5

)

0.100(0.004)

0.200(0.008)

0

.

3

0

0

(

0

.

0

1

2

)

8°

0°

3.020(0.119)

1

.

7

0

0

(

0

.

0

6

7

)

2

.

9

5

0

(

0

.

1

1

6

)

0.400(0.016)

0

.

1

5

0

(

0

.

0

0

6

)

1

.

3

0

0

(

0

.

0

5

1

)

0.200(0.008)

0

.

6

0

0

(

0

.

0

2

4

)

1.800(0.071)

2.000(0.079)

0

.

7

0

0

(

0

.

0

2

8

)

R

E

F

T

Y

P

1

.

4

5

0

(

0

.

0

5

7

)

M

A

X

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Mechanical Dimensions (Continued)

SOT-23-5 Unit: mm(inch)

24

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

Data Sheet

2.000(0.079)

2.200(0.087)

2.150(0.085)

2.450(0.096)

1.150(0.045)

1.350(0.053)

0.650(0.026)TYP

1.200(0.047)

1.400(0.055)

0.150(0.006)

0.350(0.014)

0.525(0.021)REF

0.080(0.003)

0.150(0.006)

0°

8°

0.200(0.008)

0.260(0.010)

0.460(0.018)

0.000(0.000)

0.100(0.004)

0.900(0.035)

1.000(0.039)

0.900(0.035)

1.100(0.043)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Mechanical Dimensions (Continued)

SC-70-5 Unit: mm(inch)

Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

25

Data Sheet

1.800(0.071)

2.400(0.094)

1.150(0.045)

1.350(0.053)

0.250(0.010)

0.400(0.016)

0.350(0.014)

0.500(0.020)

1.300(0.051)

Typ

1.800(0.071)

2.200(0.087)

0.700(0.027)

1.000(0.039)

0.800(0.031)

1.100(0.043)

0.000(0.000)

0.100(0.004)

0.100(0.004)

0.260(0.010)

0.260(0.010)

0.460(0.018)

0.150(0.006)

Typ

4

12

4

12

4

12

0
8

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125

Mechanical Dimensions (Continued)

SC-82 Unit: mm(inch)

°
°

°
°

°

°

°
°

BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5

26

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

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MAIN SITE

MAIN SITE

- Headquarters

BCD Semiconductor Manufacturing Limited

BCD Semiconductor Manufactur ing Limited

- Wafer Fab

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Shanghai SIM-BCD Semiconductor Manufacturing Limited

Tel: [phone], Fax: [phone]

800, Yi Shan Road, Shanghai 200233, China
Tel: [phone], Fax: [phone]

REGIONAL SALES OFFICE

Shenzhen Office

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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

China

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Tel: [phone]

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Fax: [phone]

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- Wafer Fab

BCD Semiconductor Manufacturing Limited

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

- IC Design Group

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Tel: [phone], Fax: [phone]

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Tel: [phone], Fax: [phone]

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BCD Semiconductor (Taiwan) Company Limited

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Tai wan

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Tel: [phone]

Taiwan

Fax: [phone]

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BCD Semiconductor Corp.

USA Office

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Tel : [phone]

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