Diodes AP2122 User Manual

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

General Description

The AP2122 series are positive voltage regulator ICs
fabricated by CMOS process. Each of these ICs con­sists of a voltage reference, an error amplifier, a resis­tor network for setting output voltage, a current limit
circuit for current protection and a chip enable circuit .

The AP2122 series feature high ripple rejection, low
dropout voltage, low noise, high output voltage accu­racy, and low current consumption which make them
ideal for use in various battery-powered devices.

The AP2122 series have 1.5V, 1.8V, 2.5V, 2.8V, 3.0V,

3.2V and 3.3V versions.

The AP2122 are available in standard SOT-23-5 pack­age.

Features

· Low Dropout Voltage at I

Typical (Except 1.5V Version)

· Low Standby Current: 0.1µA Typical

· Low Quiescent Current: 25µA Typical

· High Ripple Rejection: 70dB Typical（f=10kHz）

· Maximum Output Current: More Than 150mA

(300mA Limit)

· Extremely Low Noise: 30µVrm s (10Hz to

100kHz)

· Excellent Line Regulation: 4mV Typical

· Excellent Load Regulation: 12mV Typical

· High Output Voltage Accuracy: ±2%

· Excellent Line and Load Transient Response

· Compatible with Low ESR Ceramic Capacitor (as

Low as 1µF)

=100mA: 150mV

OUT

Applications

· Mobile Phones, Cordless Phones

· MP3/4

· Portable Electronic Devices

· Cameras, Video Recorders

· Sub-board Power Supplies for Telecom Equip-

ment

· Battery Powered Equipment

SOT-23-5

Figure 1. Package Type of AP2122

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

1

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Pin Configuration

K Package

(SOT-23-5)

V

OUT

GND

V

Figure 2. Pin Configuration of AP2122 (Top View)

1

2

34

IN

5

Pin Description

Pin Number Pin Name Function

1V

2 GND Ground

OUT

Regulated output voltage

NC

CE

3V

4 CE Active high enable input pin. Logic high=enable, logic low=shutdown

5 NC No connection

IN

Input voltage

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

2

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Functional Block Diagram

V

CE

3

IN

VREF

CURRENT LIMIT

4

1

2

Figure 3. Functional Block Diagram of AP2122

V

OUT

GND

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

3

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Ordering Information

AP2122 -

E1: Lead Free

Circuit Type

G1: Green

TR: Tape and Reel

A: Active High

(Pull-down resistor built-in)

1.5: Fixed Output 1.5V

1.8: Fixed Output 1.8V

2.5: Fixed Output 2.5V

Package
K: SOT-23-5

2.8: Fixed Output 2.8V

3.0: Fixed Output 3.0V

3.2: Fixed Output 3.2V

3.3: Fixed Output 3.3V

Package

SOT-23-5

Te mp er a tu re

Range

o

-40 to 85

C

Condition

Active High (Pull-down

resistor built-in)

Active High (Pull-down

resistor built-in)

Active High (Pull-down

resistor built-in)

Active High (Pull-down

resistor built-in)

Active High (Pull-down

resistor built-in)

Active High (Pull-down

resistor built-in)

Active High (Pull-down

resistor built-in)

Lead Free Green

AP2122AK-1.5TRE1 AP2122AK-1.5TRG1 E2Z G2Z

AP2122AK-1.8TRE1 AP2122AK-1.8TRG1 E2U G2U

AP2122AK-2.5TRE1 AP2122AK-2.5TRG1 E2V G2V

AP2122AK-2.8TRE1 AP2122AK-2.8TRG1 E2W G2W

AP2122AK-3.0TRE1 AP2122AK-3.0TRG1 E2X G2X

AP2122AK-3.2TRE1 AP2122AK-3.2TRG1 E3Y G3Y

AP2122AK-3.3TRE1 AP2122AK-3.3TRG1 E2Y G2Y

Part Number Marking ID

Lead Free Green

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

Packing

Typ e

Tap e &

Reel

Tap e &

Reel

Tap e &

Reel

Tap e &

Reel

Tap e &

Reel

Tap e &

Reel

Tap e &

Reel

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

4

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Input Voltage V

Enable Input Voltage V

Output Current I

Junction Temperature T

Storage Temperature Range T

Lead Temperature (Soldering, 10sec) T

LEAD

Thermal Resistance (Note 2) θ

IN

CE

OUT

J

STG

JA

6.5 V

-0.3 to VIN+0.3 V

300 mA

o

C/W

o

o

o

150

-65 to 150

260

250

C

C

C

ESD (Human Body Model) ESD 2000 V

ESD (Machine Model) ESD 200 V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica­tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, T

perature, T

)/θ

T

A

The maximum allowable power dissipation at any ambient temperature is calculated using: P

A.

Exceeding the maximum allowable power dissipation will result in excessive die temperature.

JA.

the junction-to-ambient thermal resistance, θ

J(max),

and the ambient tem-

JA,

=(T

D(max)

J(max)

-

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Input Voltage V

Operating Junction Temperature Range T

IN

J

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

5

26 V

-40 85

o

C

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics
AP2122-1.5 Electrical Characteristics

(VIN=2.5V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

V

V

Dropout Voltage

OUT

=1µF,

V

OUT

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=2.5V

1mA≤I

IN

VIN-V

≤30mA

OUT

=1V 150 mA

OUT

VIN=2.5V

OUT

≤80mA

1mA≤I

2.3V≤VIN≤6V

=30mA

I

OUT

I

=10mA 400 600

OUT

=100mA 400 600

I

OUT

=150mA 400 600

I

OUT

85oC,

unless otherwise specified.)

1.47 1.5 1.53 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=2.5V, I

VIN=2.5V

in OFF mode

V

CE

Ripple 0.5Vp-p, f=10kHz

=2.5V

V

IN

I

=30mA

)/∆T

OUT

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±150

±100

30

µV/

ppm/

µVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

6

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics (Continued)
AP2122-1.8 Electrical Characteristics

(VIN=2.8V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

V

V

=1µF,

V

OUT

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=2.8V

1mA≤I

IN

VIN-V

≤30mA

OUT

=1V 150 mA

OUT

VIN=2.8V

OUT

≤80mA

1mA≤I

2.3V≤VIN≤6V

=30mA

I

OUT

I

=10mA 20 40

OUT

=100mA 150 300

I

OUT

=150mA 200 400

I

OUT

85oC,

unless otherwise specified.)

1.764 1.8 1.836 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=2.8V, I

VIN=2.8V

in OFF mode

V

CE

Ripple 0.5Vp-p, f=10kHz

=2.8V

V

IN

I

=30mA

OUT

)/∆T

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±180

±100

30

µV/

ppm/

µVrms

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

7

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics (Continued)
AP2122-2.5 Electrical Characteristics

(VIN=3.5V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

V

V

=1µF,

V

OUT

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=3.5V

1mA≤I

IN

VIN-V

≤30mA

OUT

=1V 150 mA

OUT

VIN=3.5V

OUT

≤80mA

1mA≤I

3V≤VIN≤6V

=30mA

I

OUT

I

=10mA 20 40

OUT

=100mA 150 300

I

OUT

=150mA 200 400

I

OUT

85oC,

unless otherwise specified.)

2.45 2.5 2.55 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=3.5V, I

VIN=3.5V

in OFF mode

V

CE

Ripple 0.5Vp-p, f=10kHz

=3.5V

V

IN

I

=30mA

OUT

)/∆T

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±250

±100

30

µV/

ppm/

µVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

8

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics (Continued)
AP2122-2.8 Electrical Characteristics

(VIN=3.8V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

V

V

Dropout Voltage

OUT

=1µF,

V

OUT

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=3.8V

1mA≤I

IN

VIN-V

≤30mA

OUT

=1V 150 mA

OUT

VIN=3.8V

OUT

≤80mA

1mA≤I

3.3V≤VIN≤6V

=30mA

I

OUT

I

=10mA 20 40

OUT

=100mA 150 300

I

OUT

=150mA 200 400

I

OUT

85oC,

unless otherwise specified.)

2.744 2.8 2.856 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=3.8V, I

VIN=3.8V

in OFF mode

V

CE

Ripple 0.5Vp-p, f=10kHz

=3.8V

V

IN

I

=30mA

OUT

)/∆T

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±280

±100

30

µV/

ppm/

µVrm s

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

9

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics (Continued)
AP2122-3.0 Electrical Characteristics

(VIN=4V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

=1µF,

OUT

V

V

V

OUT

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=4V

1mA≤I

OUT

IN

VIN-V

=1V 150 mA

OUT

VIN=4V

1mA≤I

OUT

3.5V≤VIN≤6V

=30mA

I

OUT

I

=10mA 20 40

OUT

=100mA 150 300

I

OUT

I

=150mA 200 400

OUT

≤30mA

≤80mA

85oC,

unless otherwise specified.)

2.94 3.0 3.06 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=4V, I

VIN=4V

V

in OFF mode

CE

Ripple 0.5Vp-p, f=10kHz

=4V

V

IN

I

=30mA

OUT

)/∆T

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±300

±100

30

µV/

ppm/

µVrms

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

10

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics (Continued)
AP2122-3.2 Electrical Characteristics

(VIN=4.2V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

V

V

=1µF,

V

OUT

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=4.2V

1mA≤I

IN

VIN-V

≤30mA

OUT

=1V 150 mA

OUT

VIN=4.2V

OUT

≤ 80mA

1mA≤ I

3.7V≤VIN≤6V

=30mA

I

OUT

I

=10mA 20 40

OUT

=100mA 150 300

I

OUT

=150mA 200 400

I

OUT

85oC,

unless otherwise specified.)

3.136 3.2 3.264 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=4.2V, I

VIN=4.2V

in OFF mode

V

CE

Ripple 0.5Vp-p, f=10kHz

=4.2V

V

IN

I

=30mA

OUT

)/∆T

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±320

±100

30

µV/

ppm/

µVrms

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

11

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Electrical Characteristics (Continued)
AP2122-3.3 Electrical Characteristics

(VIN=4.3V, TJ=25oC, CIN=1µF, C

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage

Input Voltage V

Output Current I

Load Regulation

Line Regulation

Dropout Voltage

OUT

V

V

=1µF,

V

OUT

IN

OUT

RLOAD

RLINE

V

DROP

Bold

typeface applies over -40oC≤TJ≤

VIN=4.3V

1mA≤I

VIN-V

≤30mA

OUT

=1V 150 mA

OUT

VIN=4.3V

OUT

≤ 80mA

1mA≤ I

3.8V≤VIN≤6V

=30mA

I

OUT

I

=10mA 20 40

OUT

=100mA 150 300

I

OUT

=150mA 200 400

I

OUT

85oC,

unless otherwise specified.)

3.234 3.3 3.366 V

12 40 mV

416mV

6V

mV

Quiescent Current

Standby Current

Power Supply
Rejection Ratio

(∆V

∆V

OUT/VOUT

Output Voltage
Temperature Coefficient

Short Current Limit I

RMS Output Noise

I

I

STD

PSRR

OUT

LIMIT

V

NOISE

Q

/∆T

VIN=4.3V, I

VIN=4.3V

in OFF mode

V

CE

Ripple 0.5Vp-p, f=10kHz

=4.3V

V

IN

I

=30mA

)/∆T

OUT

V

=0V 50 mA

OUT

TA=25oC

10Hz ≤f≤100kHz

OUT

=0mA

25 50

0.1 1

µA

µA

70 dB

±330

±100

30

µV/

ppm/

µVrms

CE "High" Voltage CE input voltage "High" 1.5 V

CE "Low" Voltage CE input voltage "Low" 0.25 V

CE Pull-down Internal
Resistance

Thermal Resistance
(Junction to Case)

R

PD

θ

JC

SOT-23-5 73.9

2.5 5 10 MΩ

o

C/W

o

C

o

C

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

12

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Typical Performance Characteristics

1.5

1.2

0.9

0.6

Output Voltage (V)

0.3

AP2122-1.5

VIN=2.0V

VIN=2.5V

VIN=3.0V

0.0
0 50 100 150 200 250 300 350

Output Current (mA)

Figure 4. Output Voltage vs. Output Current

1.50

1.25

1.00

0.75

0.50

Output Voltage (V)

0.25

0.00
01234567

Input Voltage (V)

AP2122-1.5
I

=30mA

OUT

3.5

3.0

AP2122-3.0

2.5

2.0

1.5

Output Voltage (V)

1.0

0.5

0.0

VIN=3.3V

VIN=4V

VIN=6V

0 50 100 150 200 250 300 350

Output Current (mA)

Figure 5. Output Voltage vs. Output Current

3.50

3.25

3.00

2.75

2.50

Output Voltage (V)

2.25

2.00
01234567

Input Voltage (V)

AP2122-3.0

=30mA

I

OUT

Figure 6. Output Voltage vs. Input Voltage

Figure 7. Output Voltage vs. Input Voltage

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

13

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Typical Performance Characteristics (Continued)

0.6

0.5

0.4

0.3

Minimum Operating Requirement

0.2

Dropout Voltage (V)

0.1

0.0
0 40 8 0 120 160 200

AP2122-1.5

Output Current (mA)

Figure 8. Dropout Voltage vs. Output Current

1.60

1.58

1.56

1.54

1.52

1.50

1.48

Output Voltage (V)

1.46

1.44

1.42

1.40

-25 0 25 50 75 100 125

Junction Temperature (oC)

AP2122-1.5

=2.5V

V

IN

=30mA

I

OUT

0.6

0.5

0.4

0.3

0.2

Dropout Voltage (V)

0.1

0.0
0 40 80 120 160 200

AP2122-3.0

Output Current (mA)

Figure 9. Dropout Voltage vs. Output Current

3.10

3.08

3.06

3.04

3.02

3.00

2.98

Output Voltage (V)

2.96

2.94

2.92

2.90

-25 0 25 50 75 100 125

Junction Temperature (oC)

AP2122-3.0
V

=4V

IN

=30mA

I

OUT

Figure 10. Output Voltage vs. Junction Temperature

Figure 11. Output Voltage vs. Junction Temperature

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

14

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Typical Performance Characteristics (Continued)

60

50

40

30

20

Supply Current (µA)

10

0

01234567

AP2122-1.5
I

=0mA

OUT

Input Voltage (V)

Figure 12. Supply Current vs. Input Voltage

40

35

30

25

20

15

Supply Current (µA)

10

5

0

-25 0 25 50 75 100 125

Junction Temperature (oC)

AP2122-1.5
V

=2.5V

IN

=0mA

I

OUT

60

50

40

30

20

Supply Current (µA)

10

0

01234567

AP2122-3.0
I

=0mA

OUT

Input Voltage (V)

Figure 13. Supply Current vs. Input Voltage

40

35

30

25

20

15

Supply Current (µA)

10

5

0

-25 0 25 50 75 100 125

Junction Temperature (oC)

AP2122-3.0
V

=4V

IN

=0mA

I

OUT

Figure 14. Supply Current vs. Junction Temperature

Figure 15. Supply Current vs. Junction Temperature

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

15

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Typical Performance Characteristics (Continued)

5.5

4.5

3.5

( 1 V / D i v )

IN

V

2.5

0.05

0

(0.05V/Div)

OUT

-0.05

V

∆

-0.1 -0.1

Time (40µs/Div)

AP2122-1.5

Figure 16. Line Transient

(Conditions: I

1.7

1.6

1.5

(0.1V/Div)

1.4

OUT

V

=30mA, CIN=1µF, C

OUT

=1µF)

OUT

AP2122-1.5

7

6

5

( 1 V / D i v )

IN

V

4

0.05

0

(0 .05 V/D iv)

OUT

-0.05

V

∆

Time (20µs/Div)

Figure 17. Line Transient

(Conditions: I

3.2

3.1

3.0

(0.1V/Div)

OUT

2.9

V

=30mA, CIN=1µF, C

OUT

AP2122-3.0

=1µF)

OUT

AP2122-3.0

100

50

(50mA/Div)

0

OUT

I

-50

Time (200µs/Div)

Figure 18. Load Transient

(Conditions: V

=2.5V, CIN=1µF, C

IN

OUT

=1µF)

200

100

(100mA/Div)

0

OUT

I

-100

Time (200µs/Div)

Figure 19. Load Transient

(Conditions: V

=4V, CIN=1µF, C

IN

OUT

=1µF)

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

16

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Typical Performance Characteristics (Continued)

100

AP2122-1.5

80

60

40

PSRR (dB)

20

0

10 100 1k 10k 100k 1M

VIN=2.5V

I

=30mA

OUT

CIN=C

OUT

Frequency (Hz)

Figure 20. PSRR vs. Frequency

=1µF

100

90

80

70

60

50

40

PSRR (dB)

30

20

10

0

10 100 1k 10k 100k

AP2122-3.0
V

=4V

IN

I

=30mA

OUT

=1µF

C

IN=COUT

Frequency (Hz)

Figure 21. PSRR vs. Frequency

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

17

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Typical Application

VIN=4V V

V

IN

AP2122-3.0

V

V

IN

OUT

OUT

=3V

V

OUT

GND

C

OUT

1µF

C

1µF

CE

IN

NC

Note: Filter capacitors are required at the AP2122's input and output. 1µF capacitor is required at the input. The
minimum output capacitance required for stability should be more than 1µF with ESR from 0.01Ω to 100Ω.
Ceramic capacitors are recommended.

Figure 22. Typical Application of AP2122

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

18

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

Mechanical Dimensions

SOT-23-5 Unit: mm(inch)

2.820(0.111)

3.020(0.119)

)

)

4

2

2

1

0

0

.

.

0

)

)

9

)

)

6

4

1

0

1

1

.

.
0

0

(

(

0

0

5

5

6

9

.

.

2

2

7

5

6

0

0

.

.

0

0

(

(

0

0

0

0

5

7

.

.

1

1

0.200(0.008)

0

(

(

0

0
0

0

3

6

.

.

0

0

0.100(0.004)

0.200(0.008)

0.950(0.037)

P

Y

T

)
7
5
0

.

X

0

A

(
0

M

5
4

.
1

1.800(0.071)

2.000(0.079)

0.300(0.012)

0.400(0.016)

0

0

0

0

0

9

.

.

1

(

0

0

3

0

0

7

.

0

R

0

(

0

0

0

.

0

(

0

5

1

.

5

3

0

(

0

.

)

1

5

0

.

0

)

8

2

0

.

0

(

F

E

0°

8°

)

0

0

0

.

)

6

0

0

.

)

May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

19

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

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BCD Semiconductor Manufacturing Limited

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Tel: [phone], Fax: [phone]

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China

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BCD Semiconductor Manufacturing Limited

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

- IC Design Group

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Tel: [phone], Fax: [phone]

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BCD Semiconductor (Taiwan) Company Limited

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Tai wan

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Taiwan

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BCD Semiconductor Corp.

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Tel : [phone]

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