Diodes AP2121 User Manual

Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
General Description
The AP2121 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs con­sists of a voltage reference, an error amplifier, a resis­tor network for setting output voltage, a current limit circuit for current protection and a chip-enable circuit (5-pin products only).
The AP2121 series feature high supply voltage ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices.
The AP2121 series have 1.2V, 1.3V, 1.5V, 1.8V, 2.5V,
2.8V, 2.85V, 3.0V, 3.2V and 3.3V versions.
The AP2121 are available in standard SOT-23-3, SOT­23-5 and CSP-4 packages.
Features
· Low Dropout Voltage at I
Typical (Except 1.2V, 1.3V and 1.5V Versions)
· Low Standby Current: 0.1μA Typical
· Low Quiescent Current: 25μA Typical
· High Ripple Rejection: 70dB Typical f=1kHz
· Output Current: More Than 200mA (300mA
Limit)
· Extremely Low Noise: 30μVrm s (10Hz to
100kHz)
· Excellent Line Regulation: 4mV Typical
· Excellent Load Regulation: 12mV Typical
· High Output Voltage Accuracy: ±2%
· Excellent Line Transient Response and Load
Transient Response
· Compatible with Low ESR Ceramic Capacitor (as
Low as 1μF)
=100mA: 150mV
OUT
Applications
· Mobile Phones, Cordless Phones
· Wireless Communication Equipment
· Portable Games
· Cameras, Video Recorders
· Sub-board Power Supplies for Telecom Equip-
ment
· Battery Powered Equipment
SOT-23-5SOT-23-3 CSP-4
Figure 1. Package Types of AP2121
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
1
3
21
1
2
34
5
A1 A2
B1 B2
Pin 1 Mark
CE V
IN
GND V
OUT
A1 A2
B1 B 2
Pin 1 Mark
CE
V
IN
GND
V
OUT
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Pin Configuration
N Package
(SOT-23-3)
V
IN
GND
V
OUT
J4/J4A Package
(CSP-4 (P 0.5)/CSP-4 (P 0.4))
K Package
(SOT-23-5)
V
GND
CE
(CSP-4 (P 0.5)/CSP-4 (P 0.4))
IN
V
NC
J4C/J4B Package
OUT
Figure 2. Pin Configuration of AP2121 (Top View)
Pin Description
Pin Number
SOT-23-3 SOT-23-5 CSP-4
(J4/J4A)
CSP-4
(J4C/J4B)
3 1 A2 A1 V
1 2 B1 B2 GND Ground
3 A1 B1 CE Active high enable input pin. Logic high=enable,
4 NC No connection
25B2A2V
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
Pin Name Function
IN
Input voltage
logic low=shutdown
OUT
Regulated output voltage
2
VREF
CURRENT LIMIT
VREF
CURRENT LIMIT
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Functional Block Diagram
3
V
IN
2
V
OUT
1
GND
SOT-23-3
1/A2/A1
V
IN
CE
SOT-23-5/CSP-4(J4/J4A)/CSP-4(J4C/J4B)
5/B2/A2
2/B1/B23/A1/B1
V
OUT
GND
Figure 3. Functional Block Diagram of AP2121
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Ordering Information
Package
SOT-23-3
SOT-23-5
Circuit Type
A: Active High
(Pull-down resistor built-in)
Blank: No Enable Function
Package
N: SOT-23-3 K: SOT-23-5
J4: CSP-4(P 0.5) J4A: CSP-4 (P 0.4) J4C: CSP-4(P 0.5) J4B: CSP-4 (P 0.4)
Temperature
Range
o
C
-40 to 85
Active High (Pull-down resistor built-in) AP2121AK-1.2TRE1 AP2121AK-1.2TRG1 E1T G1T Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.3TRE1 AP2121AK-1.3TRG1 E1R G1R Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.5TRE1 AP2121AK-1.5TRG1 E1Z G1Z Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.8TRE1 AP2121AK-1.8TRG1 E1U G1U Tape & Reel
o
Active High (Pull-down resistor built-in) AP2121AK-2.5TRE1 AP2121AK-2.5TRG1 E1V G1V Tape & Reel
C
-40 to 85
Active High (Pull-down resistor built-in) AP2121AK-2.8TRE1 AP2121AK-2.8TRG1 E1W G1W Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-3.0TRE1 AP2121AK-3.0TRG1 E1X G1X Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-3.2TRE1 AP2121AK-3.2TRG1 E3Z G3Z Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-3.3TRE1 AP2121AK-3.3TRG1 E1Y G1Y Tape & Reel
AP2121 -
Condition
AP2121N-1.2TRE1 AP2121N-1.2TRG1 EF9 GF9 Tape & Reel
AP2121N-1.3TRE1 AP2121N-1.3TRG1 EG9 GG9 Tape & Reel
AP2121N-1.5TRE1 AP2121N-1.5TRG1 EF1 GF1 Tape & Reel
AP2121N-1.8TRE1 AP2121N-1.8TRG1 EF3 GF3 Tape & Reel
AP2121N-2.5TRE1 AP2121N-2.5TRG1 EF4 GF4 Tape & Reel
AP2121N-2.8TRE1 AP2121N-2.8TRG1 EF5 GF5 Tape & Reel
AP2121N-3.0TRE1 AP2121N-3.0TRG1 EF6 GF6 Tape & Reel
AP2121N-3.2TRE1 AP2121N-3.2TRG1 EF7 GF7 Tape & Reel
AP2121N-3.3TRE1 AP2121N-3.3TRG1 EF8 GF8 Tape & Reel
E1: Lead Free G1: Green
TR: Tape and Reel
1.2: Fixed Output 1.2V
1.3: Fixed Output 1.3V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
2.85: Fixed Output 2.85V
3.0: Fixed Output 3.0V
3.2: Fixed Output 3.2V
3.3: Fixed Output 3.3V
Part Number Marking ID
Lead Free Green Lead Free Green
Packing
Typ e
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Ordering Information (Continued)
Package
CSP-4
CSP-4
Te mp e ra tu r e
Range
o
-40 to 85
C
o
C
-40 to 85
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
Condition
Part Number Marking ID
Lead Free Green Lead Free Green
AP2121AJ4A-
1.2TRG1
AP2121AJ4A-
1.3TRG1
AP2121AJ4A-
1.5TRG1
AP2121AJ4A-
1.8TRG1
AP2121AJ4A-
2.5TRG1
AP2121AJ4A-
2.8TRG1
AP2121AJ4A-
2.85TRG1
AP2121AJ4A-
3.0TRG1
AP2121AJ4A-
3.2TRG1
AP2121AJ4A-
3.3TRG1
AP2121AJ4-
1.2TRG1
AP2121AJ4-
1.3TRG1
AP2121AJ4-
1.5TRG1
AP2121AJ4-
1.8TRG1
AP2121AJ4-
2.5TRG1
AP2121AJ4-
2.8TRG1
AP2121AJ4-
2.85TRG1
AP2121AJ4-
3.0TRG1
AP2121AJ4-
3.2TRG1
AP2121AJ4-
3.3TRG1
CB Tape & Reel
CC Tape & Reel
CD Tape & Reel
CE Tape & Reel
CF Tape & Reel
CG Tape & Reel
DD Tape & Reel
CH Tape & Reel
DA Tape & Reel
DB Tape & Reel
BA Tape & Reel
BB Tape & Reel
BC Tape & Reel
BD Tape & Reel
BE Tape & Reel
BF Tape & Reel
DC Tape & Reel
BG Tape & Reel
BH Tape & Reel
CA Tape & Reel
Packing
Typ e
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Ordering Information (Continued)
Package
CSP-4
CSP-4
Te mp e ra tu r e
Range
o
-40 to 85
C
o
C
-40 to 85
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.4 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
0.5 Pitch
Condition
Part Number Marking ID
Lead Free Green Lead Free Green
AP2121AJ4B-
1.2TRG1
AP2121AJ4B-
1.3TRG1
AP2121AJ4B-
1.5TRG1
AP2121AJ4B-
1.8TRG1
AP2121AJ4B-
2.5TRG1
AP2121AJ4B-
2.8TRG1
AP2121AJ4B-
2.85TRG1
AP2121AJ4B-
3.0TRG1
AP2121AJ4B-
3.2TRG1
AP2121AJ4B-
3.3TRG1
AP2121AJ4C-
1.2TRG1
AP2121AJ4C-
1.3TRG1
AP2121AJ4C-
1.5TRG1
AP2121AJ4C-
1.8TRG1
AP2121AJ4C-
2.5TRG1
AP2121AJ4C-
2.8TRG1
AP2121AJ4C-
2.85TRG1
AP2121AJ4C-
3.0TRG1
AP2121AJ4C-
3.2TRG1
AP2121AJ4C-
3.3TRG1
DE Tape & Reel
DF Tape & Reel
DG Tape & Reel
DH Tape & Reel
EA Tape & Reel
EB Tape & Reel
EC Tape & Reel
ED Tape & Reel
EE Tape & Reel
EF Tape & Reel
EG Tape & Reel
EH Tape & Reel
FA Tape & Reel
FB Tape & Reel
FC Tape & Reel
FD Tape & Reel
FE Tape & Reel
FF Tape & Reel
FG Tape & Reel
FH Tape & Reel
Packing
Typ e
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Input Voltage V
Enable Input Voltage V
Output Current I
Junction Temperature T
Storage Temperature Range T
Lead Temperature (Soldering, 10sec) T
LEAD
IN
CE
OUT
J
STG
6.5 V
-0.3 to VIN+0.3 V
300 mA
150
-65 to 150
260
o
o
o
C
C
C
SOT-23-3 250 Thermal Resistance (Junction to Ambient) (Note 2)
θ
JA
SOT-23-5 250
o
C/W
CSP-4 126
ESD (Human Body Model) ESD 2000 V
ESD (Machine Model) ESD 200 V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica­tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, T
perature, T
)/θ
T
A
The maximum allowable power dissipation at any ambient temperature is calculated using: P
A.
Exceeding the maximum allowable power dissipation will result in excessive die temperature.
JA.
the junction-to-ambient thermal resistance, θ
J(max),
and the ambient tem-
JA,
=(T
D(max)
J(max)
-
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Input Voltage V
Operating Ambient Temperature Range T
IN
A
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
7
26 V
-40 85
o
C
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics AP2121-1.2 Electrical Characteristics
(VIN=2.2V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
V
V
Dropout Voltage
OUT
=1μF,
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=2.2V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=2.2V
OUT
80mA
1mA≤I
2.2V≤VIN≤6V
=30mA
I
OUT
I
=10mA 700 900
OUT
I
=100mA 700 900
OUT
=150mA 700 900
I
OUT
I
=200mA 700 900
OUT
85oC,
unless otherwise specified.)
1.176 1.2 1.224 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=2.2V, I
VIN=2.2V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=2.2V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±120
±100
30
μV/
ppm/
μVrm s
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-1.3 Electrical Characteristics
(VIN=2.3V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
Dropout Voltage
OUT
V
V
=1μF,
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=2.3V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=2.3V
OUT
80mA
1mA≤I
2.3V≤VIN≤6V
=30mA
I
OUT
I
=10mA 600 800
OUT
I
=100mA 600 800
OUT
=150mA 600 800
I
OUT
I
=200mA 600 800
OUT
85oC,
unless otherwise specified.)
1.274 1.3 1.326 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=2.3V, I
VIN=2.3V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=2.3V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±130
±100
30
μV/
ppm/
μVrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-1.5 Electrical Characteristics
(VIN=2.5V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
V
V
Dropout Voltage
OUT
=1μF,
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=2.5V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=2.5V
OUT
80mA
1mA≤I
2.3V≤VIN≤6V
=30mA
I
OUT
I
=10mA 400 600
OUT
I
=100mA 400 600
OUT
=150mA 400 600
I
OUT
I
=200mA 400 600
OUT
85oC,
unless otherwise specified.)
1.47 1.5 1.53 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=2.5V, I
VIN=2.5V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=2.5V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±150
±100
30
μV/
ppm/
μVrm s
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
10
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-1.8 Electrical Characteristics
(VIN=2.8V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
Dropout Voltage
OUT
V
V
=1μF,
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=2.8V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=2.8V
OUT
80mA
1mA≤I
2.3V≤VIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
=150mA 200 400
I
OUT
I
=200mA 250 500
OUT
85oC,
unless otherwise specified.)
1.764 1.8 1.836 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=2.8V, I
VIN=2.8V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=2.8V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±180
±100
30
μV/
ppm/
μVrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
11
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-2.5 Electrical Characteristics
(VIN=3.5V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
Dropout Voltage
OUT
V
V
=1μF,
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=3.5V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=3.5V
OUT
80mA
1mA≤I
3VVIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
=150mA 200 400
I
OUT
I
=200mA 250 500
OUT
85oC,
unless otherwise specified.)
2.45 2.5 2.55 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=3.5V, I
VIN=3.5V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=3.5V
V
IN
/ΔT
I
=30mA
OUT
)/ΔT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±250
±100
30
μV/
ppm/
μVrm s
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
12
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-2.8 Electrical Characteristics
(VIN=3.8V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
V
V
Dropout Voltage
OUT
=1μF,
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=3.8V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=3.8V
OUT
80mA
1mA≤I
3.3V≤VIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
=150mA 200 400
I
OUT
I
=200mA 250 500
OUT
85oC,
unless otherwise specified.)
2.744 2.8 2.856 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
STD
PSRR
OUT
LIMIT
V
NOISE
I
Q
VIN=3.8V, I
VIN=3.8V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=3.8V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±280
±100
30
μV/
ppm/
μVrm s
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
13
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-2.85 Electrical Characteristics
(VIN=3.85V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
V
V
Dropout Voltage
OUT
V
=1μF,
V
OUT
IN
OUT
RLOAD
RLINE
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=3.85V
1mA≤I
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=3.85V
OUT
80mA
1mA≤I
3.3V≤VIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
=150mA 200 400
I
OUT
I
=200mA 250 500
OUT
85oC,
unless otherwise specified.)
2.793 2.85 2.907 V
6V
12 40 mV
416mV
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
STD
PSRR
OUT
LIMIT
V
NOISE
I
Q
VIN=3.85V, I
VIN=3.85V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=3.85V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±280
±100
30
μV/
ppm/
μVrm s
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
Thermal Resistance (Junction to Case)
R
PD
θ
JC
CSP-4
2.5 5 10 MΩ
5
o
C/W
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
14
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-3.0 Electrical Characteristics
(VIN=4V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
Dropout Voltage
=1μF,
OUT
V
V
V
OUT
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=4V
1mA≤I
IN
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=4V
OUT
80mA
1mA≤I
3.5V≤VIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
I
=150mA 200 400
OUT
=200mA 250 500
I
OUT
85oC,
unless otherwise specified.)
2.94 3.0 3.06 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=4V, I
VIN=4V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=4V
V
IN
/ΔT
=30mA
I
OUT
)/ΔT
V
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±300
±100
μV/
ppm/
=0V 50 mA
30
μVrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
15
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-3.2 Electrical Characteristics
(VIN=4.2V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
Dropout Voltage
OUT
V
V
=1μF,
V
OUT
IN
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=4.2V
1mA≤I
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=4.2V
OUT
80mA
1mA I
3.7V≤VIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
=150mA 200 400
I
OUT
I
=200mA 250 500
OUT
85oC,
unless otherwise specified.)
3.136 3.2 3.264 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=4.2V, I
VIN=4.2V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=4.2V
V
IN
/ΔT
I
=30mA
OUT
)/ΔT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±320
±100
30
μV/
ppm/
μVrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
16
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Electrical Characteristics (Continued) AP2121-3.3 Electrical Characteristics
(VIN=4.3V, TJ=25oC, CIN=1μF, C
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
Input Voltage V
Output Current I
Load Regulation
Line Regulation
Dropout Voltage
OUT
V
V
=1μF,
V
OUT
IN
OUT
RLOAD
RLINE
V
DROP
Bold
typeface applies over -40oC≤TJ≤
VIN=4.3V
1mA≤I
VIN-V
30mA
OUT
=1V 200 mA
OUT
VIN=4.3V
OUT
80mA
1mA I
3.8V≤VIN≤6V
=30mA
I
OUT
I
=10mA 20 40
OUT
I
=100mA 150 300
OUT
=150mA 200 400
I
OUT
I
=200mA 250 500
OUT
85oC,
unless otherwise specified.)
3.234 3.3 3.366 V
12 40 mV
416mV
6V
mV
Quiescent Current
Standby Current
Power Supply Rejection Ratio
V
ΔV
OUT/VOUT
Output Voltage Temperature Coefficient
Short Current Limit I
RMS Output Noise
I
I
STD
PSRR
OUT
LIMIT
V
NOISE
Q
VIN=4.3V, I
VIN=4.3V
in OFF mode
V
CE
Ripple 0.5Vp-p, f=1kHz
=4.3V
V
IN
/ΔT
I
=30mA
)/ΔT
OUT
V
=0V 50 mA
OUT
TA=25oC
10Hz ≤f≤100kHz
OUT
=0mA
25 50
0.1 1
μA
μA
70 dB
±330
±100
30
μV/
ppm/
μVrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.25 V
CE Pull-down Resistance
R
PD
2.5 5 10 MΩ
SOT-23-3 74 Thermal Resistance (Junction to Case)
θ
JC
SOT-23-5 74
o
C/W
CSP-4 5
o
C
o
C
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
17
0 50 100 150 200 250 300 350
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Output Voltage (V)
Output Current (mA)
AP2121-1.2
VIN=2V VIN=2.5V VIN=3V
0 50 100 150 200 250 300 350 400
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
AP2121-1.5
VIN= 2V
VIN= 2.5V
VIN= 4V
Output Voltage (V)
Output Current (mA)
0 50 100 150 200 250 300 350
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Output Voltage (V)
Output Current (mA)
AP2121-1.8
VIN= 2.2V
VIN= 2.8V
VIN= 4V
0 50 100 150 200 250 300 350
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
AP2121-2.5
VIN= 2.8V
VIN= 3.5V
VIN= 5V
Output Voltage (V)
Output Current (mA)
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Performance Characteristics
Figure 4. Output Voltage vs. Output Current
Figure 6. Output Voltage vs. Output Current
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
Figure 5. Output Voltage vs. Output Current
Figure 7. Output Voltage vs. Output Current
18
01234567
2.00
2.25
2.50
2.75
3.00
3.25
3.50
Output Voltage (V)
Input Voltage (V)
AP2121-3.0 I
OUT
=30mA
01234567
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Output Voltage (V)
Input Voltage (V)
AP2121-1.2 I
OUT
=30mA
0 40 80 120 160 200
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Minimum Operating Requirement
Dropout Voltage (V)
Output Current (mA)
AP2121-1.2
0 50 100 15 0 200 250 300 350
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Output Voltage (V)
Output Current (mA)
AP2121-3.0
VIN=3.3V
VIN=4V
VIN=6V
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Performance Characteristics (Continued)
Figure 8. Output Voltage vs. Output Current
Figure 10. Output Voltage vs. Input Voltage
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
Figure 9. Output Voltage vs. Input Voltage
Figure 11. Dropout Voltage vs. Output Current
19
0 40 80 120 160 200
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Dropout Voltage (V)
Output Current (mA)
AP2121-3.0
-25 0 25 50 75 100 125
2.90
2.92
2.94
2.96
2.98
3.00
3.02
3.04
3.06
3.08
3.10
AP2121-3.0 V
IN
=4V
I
OUT
=30mA
Output Voltage (V)
Junction Temperature (oC)
-25 0 25 50 75 10 0 125
1.190
1.192
1.194
1.196
1.198
1.200
1.202
1.204
1.206
1.208
1.210
Output Voltage (V)
Junction Temperature (oC)
AP2121-1.2 VIN=2.2V
I
OUT
=30mA
01234567
0
5
10
15
20
25
30
Supply Curren t (μA)
Input Voltage (V)
AP2121-1.2 I
OUT
=0mA
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Performance Characteristics (Continued)
Figure 12. Dropout Voltage vs. Output Current
Figure 14. Output Voltage vs. Junction Temperature
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
Figure 13. Output Voltage vs. Junction Temperature
Figure 15. Supply Current vs. Input Voltage
20
01234567
0
10
20
30
40
50
60
Supply Current (μA)
Input Voltage (V)
AP2121-3.0 I
OUT
=0mA
-25 0 25 50 75 100 125
0
5
10
15
20
25
30
35
40
Supply Current (μA)
Junction Temperature (oC)
AP2121-3.0 V
IN
=4V
I
OUT
=0mA
-25 0 25 50 75 100 125
0
5
10
15
20
25
30
35
40
Supply Current (μA)
Junction Temperature (oC)
AP2121-1.2 VIN=2.2V
I
OUT
=0mA
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Performance Characteristics (Continued)
Figure 16. Supply Current vs. Input Voltage
Figure 18. Supply Current vs. Junction Temperature
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
Figure 17. Supply Current vs. Junction Temperature
AP2121-1.2
( 1 V / D i v )
IN
V
(0 .05 V/D iv)
OUT
V
Δ
4.2
3.2
2.2
0.05
0
-0.05
Time (100μs/Div)
Figure 19. Line Transient
(Conditions: I
=30mA, CIN=1μF, C
OUT
OUT
=1μF)
21
10 100 1k 10k 100k
0
10
20
30
40
50
60
70
80
90
100
PSRR (dB)
Frequency (Hz)
AP2121-1.2 VIN=2.2V
I
OUT
=30mA
CIN=C
OUT
=1μF
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Performance Characteristics (Continued)
6
5
( 1 V / D i v )
IN
V
4
0.05
0
(0 .05 V/D iv)
OUT
-0.05
V
Δ
Time (20μs/Div)
Figure 20. Line Transient
(Conditions: I
3.1
3.0
(0.1V/Div)
OUT
2.9
V
=30mA, CIN=1μF, C
OUT
AP2121-3.0
=1μF)
OUT
AP2121-3.0
1.3
1.2
(0.1V/Div)
1.1
OUT
V
200
100
(100mA/Div)
0
OUT
I
Time (200μs/Div)
Figure 21. Load Transient
(Conditions: V
=2.2V, CIN=1μF, C
IN
AP2121-1.2
=1μF)
OUT
200
100
(100mA/Div)
0
OUT
I
Time (200μs/Div)
Figure 22. Load Transient
(Conditions: V
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
=4V, CIN=1μF, C
IN
OUT
Figure 23. PSRR vs. Frequency
=1μF)
22
10 100 1k 10k 100k
0
10
20
30
40
50
60
70
80
90
100
PSRR (dB)
Frequency (Hz)
AP2121-3.0 V
IN
=4V
I
OUT
=30mA
C
IN=COUT
=1μF
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Performance Characteristics (Continued)
Figure 24. PSRR vs. Frequency
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
23
V
IN
AP2121-1.2
C
IN
1μF
C
OUT
1μF
V
OUT
V
IN
V
OUT
GND
V
IN
AP2121-3.0
C
IN
1μF
C
OUT
1μF
V
OUT
V
IN
V
OUT
GND
CE
NC
VIN=2.2V
V
OUT
=1.2V
V
OUT
=3VVIN=4V
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Typical Application
Note: Filter capacitors are required at the AP2121's input and output. 1μF capacitor is required at the input. The minimum output capacitance required for stability should be more than 1μF with ESR from 0.01Ω to 100Ω. Ceramic capacitors are recommended.
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
Figure 25. Typical Application of AP2121
24
2.820(0.111)
3.020(0.119)
2.650(0.104)
2.950(0.116)
0.950(0.037) TYP
0.300(0.012)
0.500(0.020)
1.500(0.059)
1.700(0.067)
1.800(0.071)
2.000(0.079)
0.300(0.012)
0.600(0.024)
0.100(0.004)
0.200(0.008)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
1.450(0.057)
MAX.
0.200(0.008)
0 8
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Mechanical Dimensions
SOT-23-3 Unit: mm(inch)
° °
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
25
2.820(0.111)
2
.
6
5
0
(
0
.
1
0
4
)
1
.
5
0
0
(
0
.
0
5
9
)
0
.
0
0
0
(
0
.
0
0
0
)
0.300(0.012)
0.950(0.037)
0
.
9
0
0
(
0
.
0
3
5
)
0.100(0.004)
0.200(0.008)
0
.
3
0
0
(
0
.
0
1
2
)
8°
0°
3.020(0.119)
1
.
7
0
0
(
0
.
0
6
7
)
2
.
9
5
0
(
0
.
1
1
6
)
0.400(0.016)
0
.
1
5
0
(
0
.
0
0
6
)
1
.
3
0
0
(
0
.
0
5
1
)
0.200(0.008)
0
.
6
0
0
(
0
.
0
2
4
)
1.800(0.071)
2.000(0.079)
0
.
7
0
0
(
0
.
0
2
8
)
R
E
F
T
Y
P
1
.
4
5
0
(
0
.
0
5
7
)
M
A
X
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Mechanical Dimensions (Continued)
SOT-23-5 Unit: mm(inch)
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
26
0.960(0.038)
1.060(0.042)
Pin 1 Mark
0.940(0.037)
1.040(0.041)
0.400(0.016) TYP.
0.400(0.016)
TYP.
Φ
0.270(0. 011) TYP.
BA
1
2
0.550(0.022)
0.650(0.026)
0.180(0.007)
0.220(0.009)
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Mechanical Dimensions (Continued)
CSP-4 (P 0.4) Unit: mm(inch)
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
27
0.960(0.038)
1.060(0.042)
0.940(0.037)
1.040(0.041)
0.500(0. 020) TYP.
0.500(0.020)
TYP.
Φ
0.320(0. 013) TYP.
Pin 1 Mark
0.600(0. 024)
0.700(0. 028)
0.215(0.008)
0.255(0.010)
B
A
1
2
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2121
Mechanical Dimensions (Continued)
CSP-4 (P 0.5) Unit: mm(inch)
Dec. 2012 Rev. 2. 6 BCD Semiconductor Manufacturing Limited
28
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
http://www.bcdsemi.com
MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufactur ing Limited
- Wafer Fab
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Shanghai SIM-BCD Semiconductor Manufacturing Limited
Tel: +86-21-24162266, Fax: +86-21-24162277
800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
REGIONAL SALES OFFICE
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Tel: +86-755-8826 7951
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Fax: +86-755-8826 7865
Tel: +86-755-8826 7951 Fax: +86-755-8826 7865
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
- IC Design Group
800 Yi Shan Road, Shanghai 200233, China
Advanced Analog Circuits (Shanghai) Corporation
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office BCD Semiconductor (Taiwan) Company Limited
Taiwan Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
BCD Semiconductor (Taiwan) Company Limited
Tai wan
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel: +886-2-2656 2808
Taiwan
Fax: +886-2-2656 2806
Tel: +886-2-2656 2808 Fax: +886-2-2656 2806
USA Office BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
30920 Huntwood Ave. Hayward,
Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +1-510-324-2788
Tel : +1-510-324-2988 Fax: +1-510-324-2788
Loading...