1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Data Sheet
General Description
The AP2114 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 1A (Min) continuous load current.
The AP2114 features low power consumption.
The AP2114 is available in 1.2V, 1.5V, 1.8V, 2.5V
and 3.3V regulator output and 0.8V to 5V adjustable
output, and available in excellent output accuracy
±1.5%, it is also available in an excellent load
regulation and line regulation performance.
The AP2114 is available in standard packages of
SOT-223, TO-252-2
TO-263-3, SOIC-8 and PSOP-8.
(1), TO-252-2 (3), TO-252-2 (4),
Features
• Output Voltage Accuracy: ±1.5%
• Output Current: 1A (Min)
• Fold-back Short Current Protection: 50mA
• Low Dropout Voltage (3.3V): 450mV (Typ)
@I
=1A
OUT
• Stable with 4.7μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
• Excellent Line Regulation: 0.02%/V (Typ),
0.1%/V (Max) @ I
• Excellent Load Regulation: 0.2%A (Typ) @
I
=1mA to 1A
OUT
• Low Quiescent Current: 60μA (1.2V/1.5V/1.8V
/2.5V/ADJ)
• Low Output Noise: 30μV
• PSRR: 68dB @ Freq=1KHz (1.2V/1.5V/1.8V
/ADJ)
• OTSD Protection
• Operating Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
OUT
=30mA
RMS
Applications
• LCD Monitor
• LCD TV
• STB
SOT-223 TO-263-3 TO-252-2 (1)
TO-252-2 (3) TO-252-2 (4) SOIC-8 PSOP-8
Figure 1. Package Types of AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Pin Configuration
H/HA Package S Package
(SOT-223) (TO-263-3)
H HA
D/DA Package
D DA
(TO-252-2 (1)) (TO-252-2 (3)) (TO-252-2 (1)) (TO-252-2 (3))
3
VIN
2
VOUTVOUT
1
GND
VOUT
3
VIN
VOUT
2
1
GND
GND
VOUT
3
GND
VIN
GND
2
1
3
2
1
(TO-252-2 (4)) (TO-252-2 (4))
3
VIN
3
VOUT
VOUT
2
VOUT
1
GND
GND
2
GND
1
VIN
M Package MP Package
(SOIC-8) (PSOP-8)
GND
1
2
VOUT
3
GND
VIN
4
8
EN
GND
7
6
GND
GND
5
VIN
GND
EN
VOUT
GNDGND
ADJ
GND
GND
VOUT
GND
VIN
2
3
4
1
2
3
4
8
7
6
5
1
8
EN
7
GND
6
GND
GND
5
VIN
GND
EN
1
2
3
4
For Fixed Versions For Adjustable Version For Fixed Versions For Adjustable Version
Figure 2. Pin Configuration of AP2114 (Top View)
VOUT
GND
VIN
8
VOUT
GNDGND
7
ADJ
6
5
GND
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Pin Descriptions
SOT-223 (H),
TO-263-3,
TO-252-2 (1) (D)
TO-252-2 (3) (D)
TO-252-2 (4) (D)
1 2 1, 3, 5, 6, 7 2, 3, 5, 7 GND Ground
2 3 2 8 VOUT Regulated Output
3 1 4 1 VIN Input Voltage Pin
6 ADJ Adjust Output
Pin Number
SOT-223 (HA),
TO-252-2 (1) (DA)
TO-252-2 (3) (DA)
TO-252-2 (4) (DA)
SOIC-8,
PSOP-8
(Fixed)
8 4 EN
SOIC-8,
PSOP-8
(ADJ)
Pin
Name
Chip Enable, H–Normal
Work, L– Shutdown Output
Function
Functional Block Diagram
(8)
EN
Thermal
Shutdown
3MΩ
GND
1 ( 1, 3, 5, 6, 7 )
A (B)
A: SOT-223 , TO -263 -3, TO-252 -2 (1)/(3
{2}
{C}
(H)
B: SOIC-8, PSOP-8
C: SOT-223 ,
(HA)
Shutdown
Logic
TO-252-2 (1)/(3
V
REF
)/(4)
(DA)
Foldback
Current Limit
(D))/(
4)
For Fixed Versions
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
3
3 (4)
2 (2)
{1}
VIN
{3}
VOUT
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Functional Block Diagram (Continued)
EN
4
Shutdown
Logic
1
VIN
Thermal
Shutdown
Foldback
Current Limit
3 Ω
M
8
VOUT
V
GND
2, 3, 5, 7
REF
6
ADJ
SOIC-8, PSOP-8
For ADJ Version
Figure 3. Functional Block Diagram of AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Ordering Information
AP2114 -
Circuit Type G1: Green
Package
SOT-223
SOT-223
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
TO-263-3
SOIC-8
Package
H/HA: SOT-223
D/DA: TO-252-2 (1)/(3)/(4)
S: TO-263-3
M: SOIC-8
MP: PSOP-8
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
Output
Voltage
1.2V (H) AP2114H-1.2TRG1 GH12C Tape & Reel
1.5V (H) AP2114H-1.5TRG1 GH16G Tape & Reel
1.8V (H) AP2114H-1.8TRG1 GH12D Tape & Reel
2.5V (H) AP2114H-2.5TRG1 GH14C Tape & Reel
3.3V (H) AP2114H-3.3TRG1 GH12E Tape & Reel
1.2V (HA) AP2114HA-1.2TRG1 GH13B Tape & Reel
1.5V (HA) AP2114HA-1.5TRG1 GH16H Tape & Reel
1.8V (HA) AP2114HA-1.8TRG1 GH14D Tape & Reel
2.5V (HA) AP2114HA-2.5TRG1 GH14E Tape & Reel
3.3V (HA) AP2114HA-3.3TRG1 GH14F Tape & Reel
1.2V (D) AP2114D-1.2TRG1 AP2114D-1.2G1 Tape & Reel
1.5V (D) AP2114D-1.5TRG1 AP2114D-1.5G1 Tape & Reel
1.8V (D) AP2114D-1.8TRG1 AP2114D-1.8G1 Tape & Reel
2.5V (D) AP2114D-2.5TRG1 AP2114D-2.5G1 Tape & Reel
3.3V (D) AP2114D-3.3TRG1 AP2114D-3.3G1 Tape & Reel
1.2V (DA) AP2114DA-1.2TRG1 AP2114DA-1.2G1 Tape & Reel
1.5V (DA) AP2114DA-1.5TRG1 AP2114DA-1.5G1 Tape & Reel
1.8V (DA) AP2114DA-1.8TRG1 AP2114DA-1.8G1 Tape & Reel
2.5V (DA) AP2114DA-2.5TRG1 AP2114DA-2.5G1 Tape & Reel
3.3V (DA) AP2114DA-3.3TRG1 AP2114DA-3.3G1 Tape & Reel
1.2V AP2114S-1.2TRG1 AP2114S-1.2G1 Tape & Reel
1.5V AP2114S-1.5TRG1 AP2114S-1.5G1 Tape & Reel
1.8V AP2114S-1.8TRG1 AP2114S-1.8G1 Tape & Reel
2.5V AP2114S-2.5TRG1 AP2114S-2.5G1 Tape & Reel
3.3V AP2114S-3.3TRG1 AP2114S-3.3G1 Tape & Reel
1.2V AP2114M-1.2TRG1 2114M-1.2G1 Tape & Reel
1.5V AP2114M-1.5TRG1 2114M-1.5G1 Tape & Reel
1.8V AP2114M-1.8TRG1 2114M-1.8G1 Tape & Reel
2.5V AP2114M-2.5TRG1 2114M-2.5G1 Tape & Reel
3.3V AP2114M-3.3TRG1 2114M-3.3G1 Tape & Reel
ADJ
Part Number Marking ID
AP2114M-ADJG1 2114M-ADJG1 Tube
AP2114M-ADJTRG1 2114M-ADJG1 Tape & Reel
Blank: Tube
TR: Tape & Reel
1.2: Fixed Output 1.2V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
ADJ: ADJ Output
Packing
Type
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Ordering Information (Continued)
Package
PSOP-8
Temperature
Range
-40 to 85°C
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Output
Voltage
1.2V AP2114MP-1.2TRG1 2114MP-1.2G1 Tape & Reel
1.5V AP2114MP-1.5TRG1 2114MP-1.5G1 Tape & Reel
1.8V AP2114MP-1.8TRG1 2114MP-1.8G1 Tape & Reel
2.5V AP2114MP-2.5TRG1 2114MP-2.5G1 Tape & Reel
3.3V AP2114MP-3.3TRG1 2114MP-3.3G1 Tape & Reel
ADJ
Part Number Marking ID
AP2114MP-ADJG1 2114MP-ADJG1 Tube
AP2114MP-ADJTRG1 2114MP-ADJG1 Tape & Reel
Packing
Type
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.5 V
Operating Junction Temperature
Range
Storage Temperature Range T
150 ºC
T
J
-65 to 150 ºC
STG
Lead Temperature (Soldering, 10sec) T
Thermal Resistance （Junction to
Ambient）(No Heatsink)
ESD (Machine Model)
ESD (Human Body Model) 4000 V
260 ºC
LEAD
SOIC-8 144
PSOP-8 143
θ
JA
SOT-223 128
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
TO-263-3 73
400 V
90
°C/W
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.5 6.0 V
Operating Ambient Temperature
Range
-40 85 °C
T
A
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics
AP2114-1.2 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7μF (Ceramic), Typical T
OUT
= 25°C, Bold typeface applies over -40
A
O
C≤TA≤85OC
Output Voltage V
V
OUT
=2.5V, 1mA ≤ I
IN
OUT
≤ 30mA
V
OUT
×98.5%
1.2
V
OUT
×101.5%
V
Input Voltage VIN 6.0 V
Maximum Output Current I
Load Regulation
Line Regulation
OUT(MAX)
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
VIN=2.5V, V
OUT/VOUT
OUT/VOUT
I△
OUT
V△
IN
I
DROP
VIN=2.5V, 1mA ≤ I
2.5V≤VIN≤6V, I
=1.0A 1200 1300 mV
OUT
=2.5V, I
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
T△
SHORT
NOISE
VIN=2.5V,
I
=100mA
OUT
I
=30mA, TA =-40°C to 85°C
OUT
V
=0V 50 mA
OUT
10Hz ≤ f ≤100kHz (No Load) 30
=1.182V to 1.218V 1 A
OUT
≤1A 0.2 1 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 75
OUT
f=100Hz 68
f=1KHz 68
±30
μA
dB
ppm/°C
μV
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
V
STD
=2.5V, VEN in OFF mode 0.01 1.0
IN
μA
Start-up Time t
EN Pull Down Resistor
V
Discharge Resistor
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
R
T
T
HYOTSD
S
R
3.0
PD
Set EN pin at Low 60
DCHG
160
OTSD
o Load 20
25
μs
MΩ
Ω
°C
SOIC-8 74.6
Thermal Resistance
(Junction to Case)
θ
JC
PSOP-8 43.7
SOT-223 50.9
°C/W
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-1.5 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7μF (Ceramic), Typical T
OUT
= 25°C, Bold typeface applies over -40
A
O
C≤TA≤85OC
Output Voltage V
V
OUT
=2.5V, 1mA ≤ I
IN
OUT
≤ 30mA
V
OUT
×98.5%
1.5
V
OUT
×101.5%
V
Input Voltage VIN 6.0 V
Maximum Output Current I
Load Regulation
Line Regulation
OUT(MAX)
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
VIN=2.5V, V
OUT/VOUT
OUT/VOUT
I△
OUT
V△
IN
I
DROP
VIN=2.5V, 1mA ≤ I
2.5V≤VIN≤6V, I
=1.0A 800 1000 mV
OUT
=2.5V, I
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
T△
SHORT
NOISE
VIN=2.5V,
I
=100mA
OUT
I
=30mA, TA =-40°C to 85°C
OUT
V
=0V 50 mA
OUT
10Hz ≤ f ≤100kHz (No Load) 30
=1.478V to 1.523V 1 A
OUT
≤1A 0.2 1 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 75
OUT
f=100Hz 68
f=1KHz 68
±30
μA
dB
ppm/°C
μV
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
V
STD
=2.5V, VEN in OFF mode 0.01 1.0
IN
μA
Start-up Time t
EN Pull Down Resistor
V
Discharge Resistor
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
R
T
T
HYOTSD
S
R
3.0
PD
Set EN pin at Low 60
DCHG
160
OTSD
o Load 20
25
μs
MΩ
Ω
°C
SOIC-8 74.6
Thermal Resistance
(Junction to Case)
θ
JC
PSOP-8 43.7
SOT-223 50.9
°C/W
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-1.8 Electrical Characteristics (Note 2)
(VIN=2.8V, CIN=4.7μF (Ceramic), C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7μF (Ceramic), Typical T
OUT
= 25°C, Bold typeface applies over -40
A
O
C≤TA≤85OC
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejection
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
VIN=2.8V, V
OUT(MAX)
OUT/VOUT
I△
OUT
OUT/VOUT
V△
IN
I
DROP
=2.8V, 1mA ≤ I
IN
=2.8V, 1mA ≤ I
V
IN
2.8V≤VIN≤6V, I
=1.0A 500 700 mV
OUT
=2.8V, I
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
T△
V
SHORT
10Hz ≤ f ≤100kHz (No load) 30
NOISE
=2.8V,
V
IN
I
=100mA
OUT
I
=30mA, TA =-40°C to 85°C
OUT
=0V 50 mA
OUT
V
≤ 30mA
OUT
=1.773V to 1.827V 1.0 A
OUT
≤1A 0.2 1.0 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 75
OUT
OUT
×98.5%
f=100Hz 68
f=1KHz 68
±30
1.8
V
OUT
×101.5%
ppm/°C
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
V
STD
=2.8V, VEN in OFF mode 0.01 1.0
IN
μV
V
μA
dB
RMS
V
μA
Start-up Time t
EN Pull Down Resistor
V
Discharge Resistor
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
R
T
T
HYOTSD
S
R
3.0
PD
Set EN pin at Low 60
DCHG
160
OTSD
o Load 20
μs
MΩ
Ω
°C
25
SOIC-8 74.6
PSOP-8 43.7
Thermal Resistance
(Junction to Case)
θ
JC
SOT-223 50.9
°C /W
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-2.5 Electrical Characteristics (Note 2)
(VIN=3.5V, C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7μF (Ceramic), C
IN
=4.7μF (Ceramic), Typical T
OUT
= 25°C, Bold typeface applies over -40
A
O
C≤TA≤85OC
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejection
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
OUT(MAX)
VIN=3.5V, V
OUT/VOUT
I△
OUT
OUT/VOUT
V△
IN
I
DROP
=3.5V, 1mA ≤ I
IN
Vout=2.5V, V
1mA ≤ I
OUT
3.5V≤VIN≤6V, I
=1A 450 750 mV
OUT
=3.5V, I
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
T△
V
SHORT
10Hz ≤ f ≤100kHz 30
NOISE
=3.5V,
V
IN
=100mA
I
OUT
I
=30mA
OUT
=0V 50 mA
OUT
V
≤ 30mA
OUT
=2.463V to 2.537V 1.0 A
OUT
=Vout+1V
IN
≤1A
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 80
OUT
OUT
×98.5%
0.2 1.0 %/A
f=100Hz 65
f=1KHz 65
±30
2.5
V
OUT
×101.5%
ppm/°C
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
V
STD
=3.5V, VEN in OFF mode 0.01 1.0
IN
μV
V
μA
dB
RMS
V
μA
Start-up Time tS
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Set EN pin at Low 60
DCHG
160
T
OTSD
25
T
HYOTSD
o Load 20
μs
MΩ
Ω
°C
SOIC-8 74.6
PSOP-8 43.7
Thermal Resistance
(Junction to Case)
θ
JC
SOT-223 50.9
°C /W
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-3.3 Electrical Characteristics (Note 2)
(VIN=4.3V, CIN=4.7μF (Ceramic), C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7μF (Ceramic), Typical T
OUT
= 25°C, Bold typeface applies over -40
A
O
C≤TA≤85OC
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
OUT(MAX)
OUT/VOUT
I△
OUT
OUT/VOUT
V△
IN
I
DROP
VIN =4.3V, V
=4.3V, 1mA ≤ I
IN
=4.3V, 1mA ≤ I
V
IN
4.3V≤VIN≤6V, I
=1A 450 750 mV
OUT
=4.3V, I
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
△T
SHORT
NOISE
VIN=4.3V,
I
=100mA
OUT
I
=30mA
OUT
V
=0V 50 mA
OUT
10Hz ≤ f ≤100kHz (No load) 30
V
≤ 30mA
OUT
=3.25V to 3.35V 1.0 A
OUT
≤1A 0.2 1.0 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 65 90
OUT
OUT
×98.5%
3.3
f=100Hz 65
f=1KHz 65
±30
V
OUT
×101.5%
ppm/°C
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
Start-up Time t
V
STD
S
=4.3V, VEN in OFF mode 0.01 1.0
IN
o Load
20
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Set EN pin at Low 60
DCHG
160
T
OTSD
T
25
HYOTSD
SOIC-8 74.6
μV
V
μA
dB
RMS
V
μA
μs
MΩ
Ω
°C
PSOP-8 43.7
Thermal Resistance
(Junction to Case)
θ
JC
SOT-223 50.9
°C/W
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
12
n
N
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-ADJ Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7μF (Ceramic), Typical T
OUT
= 25°C, Bold typeface applies over -40
A
O
C≤TA≤85OC
Reference Voltage V
V
REF
=2.5V, 1mA ≤ I
IN
OUT
≤ 30mA
V
REF
×98.5%
0.8
V
REF
×101.5%
V
Input Voltage VIN 6.0 V
Maximum Output Current I
Load Regulation
Line Regulation
OUT(MAX)
△V
△V
Quiescent Current IQ V
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
VIN=2.5V, V
I△
OUT
V△
VIN=2.5V, 1mA ≤ I
IN
2.5V≤VIN≤6V, I
=2.5V, I
IN
OUT/VOUT
OUT/VOUT
Ripple 1Vp-p
PSRR
OUT/VOUT
T△
V
SHORT
10Hz ≤ f ≤100kHz (No Load) 30
NOISE
=2.5V,
V
IN
I
=100mA
OUT
I
=30mA, TA =-40°C to 85°C
OUT
=0V 50 mA
OUT
= 0.788V to 0.812V
OUT
≤1A 0.2 1 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 75
OUT
1 A
f=100Hz 68
f=1KHz 68
±30
μA
dB
ppm/°C
μV
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
V
STD
=2.5V, VEN in OFF mode 0.01 1.0
IN
μA
Start-up Time t
EN Pull Down Resistor
V
Discharge Resistor
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
R
T
T
HYOTSD
Thermal Resistance
(Junction to Case)
S
R
3.0
PD
Set EN pin at Low 60
DCHG
160
OTSD
θ
JC
o Load 20
μs
MΩ
Ω
°C
25
SOIC-8 74.6
PSOP-8 43.7
°C/W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
13
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics
500
450
400
350
300
250
200
Ground Current (μA)
150
100
50
AP2114_1.2V
VIN=2.5V
TA=-40OC
TA=25OC
TA=85OC
Continuous Airflow 10scfm
0
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
400
350
300
250
200
150
Ground Current (μA)
100
50
0
AP2114_1.8V
V
=2.8V
IN
C
=4.7μF
IN
C
=4.7μF
OUT
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
Figure 4. Ground Current vs. Output Current Figure 5. Ground Current vs. Output Current
TA=-40OC
TA=25OC
TA=85OC
400
350
300
250
200
150
Ground Current (μA)
100
50
AP2114_2.5V
V
=3.5V
IN
C
=4.7μF
IN
=4.7μF
C
OUT
TA=-40OC
TA=25OC
Continuous Airflow 10scfm
0
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
TA=85OC
500.0
450.0
400.0
350.0
300.0
250.0
200.0
Ground Current (μA)
150.0
100.0
50.0
Continuous Airflow 10scfm
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
AP2114_3.3V
VIN=4.3V
TA=-40OC
TA=25OC
TA=85OC
Figure 6. Ground Current vs. Output Current Figure 7. Ground Current vs. Output Current
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
14
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
100
90
80
70
60
Quiescent Current (μA)
50
40
Continuous Airflow 10scfm
30
-40-200 20406080
Temperature (OC)
AP2114_1.2V
VIN=2.5V
=0mA
I
OUT
100
90
80
70
60
50
40
30
Quiescent Current (μA)
20
10
Continuous Airflow 10scfm
0
-40 -20 0 20 40 60 80 100 120
Temperature (OC)
AP2114_1.8V
=2.8V
V
IN
No Load
C
=4.7μF
IN
C
OUT
=4.7μF
Figure 8. Quiescent Current vs. Temperature Figure 9. Quiescent Current vs. Temperature
100
95
90
85
80
75
70
65
60
55
50
45
40
35
Quiescent Current (μA)
30
25
20
15
10
Continuous Airflow 10scfm
5
0
-40 -20 0 20 40 60 80 100 120
Temperature (OC)
Figure 10. Quiescent Current vs. Temperature Figure 11. Quiescent Current vs. Temperature
AP2114_2.5V
=3.5V
V
IN
No Load
=4.7μF
C
IN
C
=4.7μF
OUT
100
90
80
70
60
Quiescent Current (μA)
50
40
Continuous Airflow 10scfm
30
-40-200 20406080
Temperature (OC)
AP2114_3.3V
VIN=4.3V
=0mA
I
OUT
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
15
100
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
Quiescent Current (μA)
90
80
70
60
50
40
30
20
10
AP2114_1.2V
=0mA
I
OUT
TA= -40OC
TA= 25OC
TA= 85OC
Continuous Airflow 10scfm
23456
Input Voltage (V)
110
100
90
80
70
60
Quiescent Current (μA)
50
40
Continuous Airflow 10scfm
30
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Figure 12. Quiescent Current vs. Input Voltage Figure 13. Quiescent Current vs. Input Voltage
110
100
90
80
70
60
Quiescent Current (μA)
50
40
Continuous Airflow 10scfm
30
2.53.03.54.04.55.05.56.0
Figure 14. Quiescent Current vs. Input Voltage Figure 15. Quiescent Current vs. Input Voltage
Input Voltage (V)
AP2114_2.5V
=0mA
I
OUT
TA=25oC
TA=-40oC
TA=85oC
110
100
90
80
70
60
Quiescent Current (μA)
50
40
Continuous Airflow 10scfm
30
3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
Input Voltage (V)
AP2114_1.8V
=0mA
I
OUT
TA=25oC
TA=-40oC
TA=85oC
AP2114_3.3V
=0mA
I
OUT
TA= -40OC
TA= 25OC
TA= 85OC
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
16
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
1.216
1.212
1.208
1.204
1.200
1.196
Output Voltage (V)
1.192
1.188
1.184
Continuous Airflow 10scfm
1.180
-40-200 20406080
AP2114_1.2V
VIN=2.5V
I
OUT
I
OUT
I
OUT
I
OUT
Temperature (OC)
=10mA
=100mA
=500mA
=1000mA
1.90
AP2114_1.8V
1.88
1.86
1.84
1.82
1.80
1.78
1.76
Output Voltage (V)
1.74
1.72
1.70
=2.8V
V
IN
=4.7μF
C
IN
C
=4.7μF
OUT
Continuous Airflow 10scfm
-40-20 0 20406080
Temperature (OC)
Figure 16. Output Voltage vs. Temperature Figure 17. Output Voltage vs. Temperature
3.35
2.54
2.52
2.50
AP2114_2.5V
2.48
2.46
Output Voltage (V)
2.44
2.42
2.40
=3.5V
V
IN
C
=4.7μF
IN
C
=4.7μF
OUT
Continuous Airflow 10scfm
-40 -20 0 20 40 60 80
I
OUT
I
OUT
I
OUT
I
OUT
Temperature (OC)
=10mA
=100mA
=500mA
=1000mA
Output Voltage (V)
AP2114_3.3V
3.34
VIN=4.3V
3.33
3.32
3.31
3.30
3.29
3.28
3.27
3.26
Continuous Airflow 10scfm
3.25
-40-200 20406080
Temperature (OC)
I
OUT
I
OUT
I
OUT
I
OUT
=10mA
=100mA
=500mA
=1000mA
I
=10mA
OUT
I
=100mA
OUT
I
=500mA
OUT
I
=1000mA
OUT
Figure 18. Output Voltage vs. Temperature Figure 19. Output Voltage vs. Temperature
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
17
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Output Voltage (V)
0.4
0.2
Continuous Airflow 10scfm
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
Output Voltage (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Continuous Airflow 10scfm
0.0
123456
Input Voltage (V)
AP2114_1.2V
TA=-40OC
TA=25OC
TA=85OC
CIN=4.7μF
=4.7μF
C
OUT
=10mA
I
OUT
Figure 20. Output Voltage vs. Input Voltage Figure 21. Output Voltage vs. Input Voltage
2.5
2.0
1.5
1.0
Output Voltage (V)
0.5
0.0
Continuous Airflow 10scfm
1234567
Input Voltage (V)
AP2114_2.5V
=4.7μF
C
IN
C
=4.7μF
OUT
I
=10mA
OUT
TA=-40OC
TA=25OC
TA=85OC
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
Continuous Airflow 10scfm
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Figure 22. Output Voltage vs. Input Voltage Figure 23. Output Voltage vs. Input Voltage
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
18
Input Voltage (V)
AP2114_1.8V
TA=-40oC
TA=25oC
TA=85oC
=4.7μF
C
IN
C
=4.7μF
OUT
=10mA
I
OUT
AP2114_3.3V
TA=-40OC
TA=25OC
TA=85OC
CIN=4.7μF
=4.7μF
C
OUT
I
=10mA
OUT
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
1.210
1.205
1.200
1.195
1.190
1.185
1.180
1.175
Output Voltage (V)
1.170
1.165
1.160
1.155
1.150
AP2114_1.2V
VIN=2.5V
TA=-40OC
TA=25OC
TA=85OC
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Output Voltage (V)
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Continuous Airflow 10scfm
Output Current (A)
AP2114_1.2V
VIN=2.5V
VIN=3.3V
TA=25OC
=4.7μF
C
IN
=4.7μF
C
OUT
Figure 24. Output Voltage vs. Output Current Figure 25. Output Voltage vs. Output Current
2.00
1.75
1.50
1.25
1.00
0.75
Output Voltage (V)
0.50
0.25
0.00
AP2114_1.8V
V
=2.8V
IN
=4.7μF
C
IN
=4.7μF
C
OUT
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Output Current (A)
TA=-40OC
TA=25OC
TA=85OC
3.0
2.5
AP2114_2.5V
=3.5V
2.0
1.5
1.0
Output Voltage (V)
0.5
0.0
V
IN
C
=4.7μF
IN
=4.7μF
C
OUT
TA=-40OC
TA=25OC
TA=85OC
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Output Current (A)
Figure 26. Output Voltage vs. Output Current Figure 27. Output Voltage vs. Output Current
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
19
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Continuous Airflow 10scfm
Output Current (A)
AP2114_3.3V
VIN=4.3V
VIN=5V
TA=25OC
C
=4.7μF
IN
=4.7μF
C
OUT
Figure 28. Output Voltage vs. Output Current Figure 29. Output Voltage vs. Output Current
0.7
(V)
Dropout Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0.0
AP2114_1.8V
V
=2.8V
IN
=4.7μF
C
IN
C
=4.7μF
OUT
TA=-40OC
TA=25OC
TA=85OC
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
Figure 30. Dropout Voltage vs. Output Current Figure 31. Dropout Voltage vs. Output Current
3.35
3.34
3.33
3.32
3.31
3.30
Output Voltage (V)
3.29
3.28
Continuous Airflow 10scfm
3.27
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
0.60
AP2114_2.5V
0.55
0.50
0.45
(V)
0.40
0.35
0.30
0.25
0.20
Dropout Voltage
0.15
0.10
0.05
0.00
=3.5V
V
IN
C
=4.7μF
IN
C
=4.7μF
OUT
TA=-40OC
TA=25OC
TA=85OC
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
AP2114_3.3V
VIN=4.3V
TA=-40OC
TA=25OC
TA=85OC
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
20
0
M
O
t
t
C
t
(A)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
Dropout Voltage (V)
0.15
0.10
0.05
0.00
AP2114_3.3V
CIN=4.7μF
C
=4.7μF
OUT
TA=-40OC
TA=25OC
TA=85OC
Continuous Airflow 10scfm
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
Figure 32. Dropout Voltage vs. Output Current Figure 33. Max. Output Current vs. Input Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Max. Output Current (A)
0.4
0.2
Continuous Airflow 10scfm
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
AP2114_1.8V
C
=4.7μF
IN
=4.7μF
C
OUT
=1.8X(1+1.5%)
V
OUT
1.8
1.6
1.4
1.2
urren
1.0
0.8
pu
u
0.6
ax.
0.4
0.2
Continuous Airflow 10scfm
0.0
2.02.53.03.54.04.55.05.56.
Input Voltage (V)
AP2114_1.2V
TA=25OC
C
=4.7μF
IN
C
=4.7μF
OUT
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Max. Output Current (A)
0.4
0.2
Continuous Airflow 10scfm
0.0
3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
AP2114_2.5V
C
=4.7μF
IN
=4.7μF
C
OUT
=2.5X(1+1.5%)
V
OUT
Figure 34. Max. Output Current vs. Input Voltage Figure 35. Max. Output Current vs. Input Voltage
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
21
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Max. Output Current (A)
0.4
0.2
Continuous Airflow 10scfm
0.0
4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
AP2114_3.3V
CIN=4.7μF
=4.7μF
C
OUT
=25OC
T
A
2.0
AP2114-3.3V
1.8
TO-252-2 (1)/(3)
1.6
1.4
1.2
1.0
0.8
Max. Output Current (A)
Note 4
0.6
0.4
Copper Heat Spreader Area:100mm
0.2
4.0 4.5 5.0 5.5 6.0
Still air
2
Input Voltege (V)
TA=-30OC
TA=25OC
TA=40OC
TA=50OC
TA=85OC
Figure 36. Max. Output Current vs. Input Voltage Figure 37. Max. Output Current vs. Input Voltage
Note 4: Considering power dissipation and thermal behavior, we suggest provide enough design margins in
application design which are no less than 30% at least.
100
90
80
70
60
50
40
Output Short Current (mA)
30
Continuous Airflow 10scfm
20
-40 -20 0 20 40 60 80
Temperature (OC)
AP2114_1.2V
VIN=2.5V
Figure 38. Output Short Current vs. Temperature Figure 39. Output Short Current vs. Temperature
100
90
80
70
60
50
Output Short Current (mA)
40
30
Continuous Airflow 10scfm
20
-40-200 20406080100120
Temperature (OC)
AP2114_1.8V
V
IN
C
C
=2.8V
=4.7μF
IN
=4.7μF
OUT
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
22
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
100
90
80
70
60
50
40
Output Short Current (mA)
30
Continuous Airflow 10scfm
20
-40-200 20406080100120
Temperature (OC)
AP2114_2.5V
V
=3.5V
IN
C
=4.7μF
IN
C
=4.7μF
OUT
100
AP2114_3.3V
90
VIN=4.3V
80
70
60
50
40
Output Short Current (mA)
30
Continuous Airflow 10scfm
20
-40-200 20406080
Temperature (OC)
Figure 40. Output Short Current vs. Temperature Figure 41. Output Short Current vs. Temperature
80
70
AP2114_1.2V
80
70
AP2114_1.8V
60
50
40
PSRR (dB)
30
20
10
0
100 1k 10k 100k
Frequency (Hz)
TA=25OC
C
=1μF
IN
=4.7μF
C
OUT
I
=10mA
OUT
Ripple=1Vp-p
60
50
40
PSRR (dB)
30
20
10
0
TA=25OC
=4.7μF
C
IN
C
=4.7μF
OUT
I
=10mA
OUT
Ripple=1Vp-p
100 1k 10k 100k
Frequency (Hz)
Figure 42. PSRR vs. Frequency Figure 43. PSRR vs. Frequency
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Typical Performance Characteristics (Continued)
80
70
60
50
40
PSRR (dB)
30
20
10
0
AP2114_2.5V
TA=25OC
=4.7μF
C
IN
=4.7μF
C
OUT
I
=10mA
OUT
Ripple=1Vp-p
100 1k 10k 100k
Frequency (Hz)
Figure 44. PSRR vs. Frequency Figure 45. PSRR vs. Frequency
PSRR (dB)
80
70
60
50
40
30
20
10
0
AP2114_3.3V
I
=10mA
OUT
I
=100mA
OUT
100 1k 10k 100k
Frequency (Hz)
TA=25OC
=1μF
C
IN
C
=4.7μF
OUT
Ripple=1Vp-p
1A
0A
C
C
=4.7μF
IN
=4.7μF
OUT
Figure 46. Load Transient
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
T ypical Application
Figure 47. Ty pical Application of AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions
SOT-223 Unit: mm(inch)
6.300(0.248)
6.700(0.264)
7.300(0.287)
1.750(0.069)
TYP
2.300(0.091)
TYP
6.700(0.264)
2.900(0.114)
3.100(0.122)
4.500(0.177)
4.700(0.185)
3.300(0.130)
3.700(0.146)
0.610(0.024)
0.810(0.032)
0.900(0.035)
MIN
0.250(0.010)
0°
10°
2
.
0
3
.
0
)
0
1
0
.
0
(
0
5
)
4
1
0
.
0
(
0
5
0.020(0.001)
0.100(0.004)
1.500(0.059)
1.700(0.067)
1.520(0.060)
1.800(0.071)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions (Continued)
TO-252-2 (1) Unit: mm(inch)
1.350(0.053)
1.650(0.065)
4.800(0.189)
6.500(0.256)
0.600(0.024)
9.500(0.374)
9.900(0.390)
0.900(0.035)
1.400(0.055)
1.780(0.070)
5.450(0.215)
2.550(0.100)
6.250(0.246)
3.800REF(0.150REF)
2.900(0.114)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions (Continued)
TO-252-2 (3) Unit: mm(inch)
6.500(0.256)
6.700(0.264)
4.700REF
0.470(0.019)
0.600(0.024)
5
0
8
9
0.900(0.035)
1.100(0.043)
3
7
24)
0
0.600(0.
1.000(0.039)
5.250REF
0
8
9.800(0.386)
10.400(0.409)
2.900REF
)
)
5
7
.400(0.05
.700(0.06
1
1
Option 2
6.000(0.236)
6.200(0.244)
0.720(0.028)
0.900(0.035)
2.286(0.090)
0.900(0.035)
1.800REF
BSC
1.250(0.049)
5.130(0.202)
5.460(0.215)
5
9
1.29±0.1
Option 1
0.150(0.006)
0.750(0.030)
0.720(0.028)
0.850(0.033)
2.200(0.087)
2.380(0.094)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions (Continued)
TO-252-2 (4) Unit: mm(inch)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions (Continued)
TO-263-3 Unit: mm(inch)
6
1
.
0
7
(
0
0
.
4
8
.
4
)
0
2
9
)
1
0
.
0
(
0
3°
7
0
°
)
)
0
0
4
8
3
3
.
.
0
0
(
(
0
0
4
5
6
6
.
.
8
9
2.540(0.100)
9.650(0.380)
10.290(0.405)
8.840(0.348)
1.270(0.050)
1.390(0.055)
1
1
1.150(0.045)
1.390(0.055)
0.510(0.020)
0.990(0.039)
2.540(0.100)
1.150(0.045)
1.390(0.055)
7°
0.020(0.001)
0.250(0.010)
2.640(0.104)
0
6
7
.
4
7
.
5
)
1
8
5
.
0
(
)
0
2
6
.
0
0
4
(
)
)
4
6
9
0
0
1
.
.
0
0
(
(
3°
0
0
9
9
3
6
.
.
2
2
0.380(0.015)
0°
6°
2.700(0.106)
0.360(0.014)
0.400(0.016)
7°
.
2
0
.
0
(
0
0
2
°
2
°
8
2.540(0.100)
8
7
)
7.420(0.292)
)
0
2
2
.
0
(
0
0
6
.
5
7.980(0.314)
2.540(0.100)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
30
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions (Continued)
SOIC-8 Unit: mm(inch)
R0.150(0.006)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Mechanical Dimensions (Continued)
PSOP-8 Unit: mm(inch)
3.202(0.126)
3.402(0.134)
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
32
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufactur ing Limited
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Tel: +86-21-24162266, Fax: +86-21-24162277
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Shenzhen Office
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Shenzhen Office
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
China
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Tel: +86-755-8826 7951
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Fax: +86-755-8826 7865
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BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
- IC Design Group
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Advanced Analog Circuits (Shanghai) Corporation
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
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Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
Taiwan Office
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Tai wan
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Tel: +886-2-2656 2808
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Fax: +886-2-2656 2806
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
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BCD Semiconductor Corp.
USA Office
30920 Huntwood Ave. Hayward,
BCD Semiconductor Corporation
CA 94544, USA
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Tel : +1-510-324-2988
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Tel : +1-510-324-2988
Fax: +1-510-324-2788
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