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AP2112
User Manual
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Diodes AP2112 User Manual

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Page 1
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Data Sheet
General Description
The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA (min.) continuous load current.
The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V, 2.8V and 3.3V regulated output and 0.8V to 5V adjustable output, and provides excellent output accuracy ±1.5%, also provides an excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. The AP2112 has built-in auto discharge function.
The regulator features low power consumption, and provides SOT-23-5, SOT-89-5, and SOIC-8 packages.
Features
Output Voltage Accuracy: ±1.5%
•
• Output Current: 600mA (Min.)
• Foldback Short Current Protection: 50mA
• Enable Function to Turn ON/OFF V
• Low Dropout Voltage (3.3V): 250mV (Typ.) @I
=600mA
OUT
• Excellent Load Regulation: 0.2%/A (Typ.)
• Excellent Line Regulation: 0.02%/V (Typ.)
• Low Quiescent Current: 55μA (Typ.)
• Low Standby Current: 0.01μA (Typ.)
• Low Output Noise: 50μV
• PSRR: 100Hz -65dB, 1kHz -65dB
• OTSD Protection
• Stable with 1.0μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic
• Operation Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
RMS
OUT
Applications
• Laptop Computer
• Portable DVD
• LCD Monitor
SOT-23-5 SOT-89-5
SOIC-8 (Option 1) SOIC-8 (Option 2)
Figure 1. Package Types of AP2112
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Pin Configuration
K Package M Package
SOT-23-5 SOIC-8
R5/R5A Package
SOT-89-5
R5 R5A
VIN
45
23
VOUT
1
EN NCGND
Figure 2. Pin Configuration of AP2112 (Top View)
Pin Descriptions
PIN No.
SOT-23-5 SOT-89-5 SOIC-8
1 4 8 VIN Input Voltage
2 2 6, 7 GND GND
3
4 ADJ/NC
5 5 1 VOUT Output Voltage
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
3 (R5)
5 EN Chip Enable, H – normal work, L – shutdown output
1 (R5A)
1 (R5)
2, 3, 4 NC No Connection
3 (R5A)
Name Descriptions
Adjust Output for ADJ version/No Connection for Fixed Version
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Functional Block Diagram
GND
3(1){5}[3]
EN
Shutdown
3MΩ
2(2){6,7}[2]
A (B){C}[D] A: SOT-89-5 (R5) B: SOT-89-5 (R5A) C: SOIC-8 D: SOT-23-5
Figure 3. Functional Block Diagram of AP2112 for Fixed Version
Thermal
Shutdown Logic
V
REF
Foldback
Current Limit
4(4){8}[1]
5(5){1}[5]
VIN
VOUT
EN
3
Shutdown Logic
1
VIN
Thermal
Shutdown
Foldback
Current Limit
3mΩ
V
GND
2
REF
5
VOUT
4
ADJ/NC
SOT-23-5
Figure 4. Functional Block Diagram of AP2112 for Adjustable Version
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Ordering Information
AP2112 -
G1: Green
Circuit Type
Package
K: SOT-23-5 M: SOIC-8 R5/R5A: SOT-89-5
Package
SOT-23-5
SOIC-8
SOT-89-5
SOT-89-5
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
Condition Part Number Marking ID Packing Type
1.2V AP2112K-1.2TRG1 G3L Tape & Reel
1.8V AP2112K-1.8TRG1 G3M Tape & Reel
2.5V AP2112K-2.5TRG1 G3N Tape & Reel
2.6V AP2112K-2.6TRG1 G5N Tape & Reel
2.8V AP2112K-2.8TRG1 G3Q Tape & Reel
3.3V AP2112K-3.3TRG1 G3P Tape & Reel
ADJ AP2112K-ADJTRG1 G3T Tape & Reel
1.2V
1.8V
2.5V
2.6V
3.3V
1.2V(R5) AP2112R5-1.2TRG1 G37D Tape & Reel
1.8V(R5) AP2112R5-1.8TRG1 G37E Tape & Reel
2.5V(R5) AP2112R5-2.5TRG1 G37F Tape & Reel
2.6V(R5) AP2112R5-2.6TRG1 G13F Tape & Reel
3.3V(R5) AP2112R5-3.3TRG1 G37G Tape & Reel
1.2V(R5A) AP2112R5A-1.2TRG1 G33C Tape & Reel
1.8V(R5A) AP2112R5A-1.8TRG1 G33E Tape & Reel
2.5V(R5A) AP2112R5A-2.5TRG1 G28G Tape & Reel
2.6V(R5A) AP2112R5A-2.6TRG1 G13E Tape & Reel
3.3V(R5A) AP2112R5A-3.3TRG1 G28H Tape & Reel
AP2112M-1.2G1 2112M-1.2G1 Tube
AP2112M-1.2TRG1 2112M-1.2G1 Tape & Reel
AP2112M-1.8G1 2112M-1.8G1 Tube
AP2112M-1.8TRG1 2112M-1.8G1 Tape & Reel
AP2112M-2.5G1 2112M-2.5G1 Tube
AP2112M-2.5TRG1 2112M-2.5G1 Tape & Reel
AP2112M-2.6G1 2112M-2.6G1 Tube
AP2112M-2.6TRG1 2112M-2.6G1 Tape & Reel
AP2112M-3.3G1 2112M-3.3G1 Tube
AP2112M-3.3TRG1 2112M-3.3G1 Tape & Reel
Blank: Tube
TR: Tape & Reel
1.2V: Fixed Output 1.2V
1.8V: Fixed Output 1.8V
2.5V: Fixed Output 2.5V
2.6V: Fixed Output 2.6V
2.8V: Fixed Output 2.8V
3.3V: Fixed Output 3.3V ADJ: Adjustable Output
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VCC 6.5 V
Operating Junction Temperature Range
Storage temperature Range T
Lead Temperature (Soldering, 10 Seconds)
Thermal Resistance (Junction to Ambient)(No Heatsink)
150 ºC
T
J
-65 to 150 ºC
STG
260 ºC
T
LEAD
SOT-23-5 184
θ
JA
SOIC-8 114
SOT-89-5 120
°C /W
ESD (Machine Model)
ESD (Human Body Model) 4000 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
400 V
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.5 6.0 V
Ambient Operation Temperature Range
-40 85 °C
T
A
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics
AP2112-1.2 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), C
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Maximum Output Current
Load Regulation
Line Regulation
(V△
(V△
=1.0μF (Ceramic), Typical TA=25°C, unless otherwise specified (Note 3).
OUT
V
V
OUT
I
OUT(MAX)
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
=2.5V, 1mA≤I
IN
=2.5V,
V
IN
V
=1.182V to 1.218V
OUT
)/
=2.5V, 1mA≤I
V
IN
)/
2.5V≤V
I
OUT
≤6V, I
IN
=10mA 1000 1300
≤30mA
OUT
≤600mA -1 0.2 1 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
OUT
*98.5%
600 mA
1.2
V
OUT
*101.5%
V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature
(V△
OUT/VOUT
Coefficient
Short Current Limit I
RMS Output Noise V
DROP
V
STD
PSRR
)/ T△
V
SHORT
NOISE
=300mA 1000 1300
OUT
I
=600mA 1000 1300
OUT
=2.5V, I
IN
=2.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
=0mA 55 80
OUT
f=100Hz 65
VIN=2.5V,
=100mA
I
OUT
I
=30mA
OUT
T
=-40°C to 85°C
A
=0V 50 mA
OUT
o Load, 10Hz≤f≤100kHz 50
f=1KHz 65
±100 ppm/°C
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
EN Pull Down Resistor RPD 3.0
V
Discharge
OUT
Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Set EN pin at Low 60
R
DCHG
T
160
OTSD
25
T
HYOTSD
SOT-23-5 96
μV
MΩ
mV I
μA μA
dB
RMS
V
μs
Ω
°C
Thermal Resistance
θJC
°C/WSOIC-8 75
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-1.8 Electrical Characteristic (Note 2)
VIN=2.8V, CIN=1.0μF (Ceramic), C
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
=1.0μF (Ceramic), Typical T
OUT
V
OUT
V
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
V
)/
V 1mA ≤I
)/
2.8V≤V
OUT(MAX)
(V△
(V△
I
=25°C, unless otherwise specified (Note 3).
A
V
=2.8V, 1mA≤I
IN
=2.8V,
IN
=1.773V to 1.827V
OUT
=1.8V, VIN=V
OUT
OUT
≤600mA
OUT
≤6V, I
IN
=10mA 500 700
≤30mA
OUT
+1V,
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
OUT
*98.5%
1.8
600 mA
-1 0.2 1 %/A
V
OUT
*101.5%
V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature Coefficient
(V△
Short Current Limit I
RMS Output Noise V
DROP
V
STD
PSRR
OUT/VOUT
V
SHORT
NOISE
I
Ripple 0.5Vp-p V I
I
)/ T△
T
=300mA 500 700
OUT
=600mA 500 700
OUT
=2.8V, I
IN
=2.8V, VEN in OFF mode 0.01 1.0
IN
=0mA 55 80
OUT
f=100Hz 65
=2.8V,
IN
=100mA
OUT
=30mA
OUT
=-40°C to 85°C
A
=0V 50 mA
OUT
f=1KHz
65
±100 ppm/°C
o Load, 10Hz≤f≤100kHz 50
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Set EN pin at Low 60
DCHG
T
160
OTSD
25
T
HYOTSD
SOT-23-5 96
μV
mV I
μA μA
dB
RMS
V
μs
MΩ
Ω
°C
Thermal Resistance
θJC
°C/WSOIC-8 75
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-2.5 Electrical Characteristic (Note 2)
VIN=3.5V, CIN=1.0μF (Ceramic), C
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
=1.0μF (Ceramic), Typical T
OUT
V
OUT
V
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
V
)/
V 1mA≤I
)/
3.5V≤V
OUT(MAX)
(V△
(V△
I
=25°C, unless otherwise specified (Note 3).
A
V
=3.5V, 1mA≤I
IN
=3.5V,
IN
=2.463V to 2.537V
OUT
=2.5V, VIN=V
OUT
OUT
≤600mA
OUT
≤6V, I
IN
=10mA 5 8
≤30mA
OUT
+1V,
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
OUT
*98.5%
2.5
600 mA
-1 0.2 1 %/A
V
OUT
*101.5%
V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature Coefficient
(V△
Short Current Limit I
RMS Output Noise V
DROP
V
STD
PSRR
OUT/VOUT
V
SHORT
NOISE
I
Ripple 0.5Vp-p V I
I
)/ T△
T
=300mA 125 200
OUT
=600mA 250 400
OUT
=3.5V, I
IN
=3.5V, VEN in OFF mode 0.01 1.0
IN
=0mA 55 80
OUT
f=100Hz 65
=3.5V,
IN
=100mA
OUT
=30mA
OUT
=-40°C to 85°C
A
=0V 50 mA
OUT
f=1KHz
65
±100 ppm/°C
o Load, 10Hz≤f≤100kHz 50
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Set EN pin at Low 60
DCHG
T
160
OTSD
25
T
HYOTSD
SOT-23-5 96
μV
mV I
μA μA
dB
RMS
V
μs
MΩ
Ω
°C
Thermal Resistance
θJC
°C/WSOIC-8 75
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
8
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-2.6 Electrical Characteristic (Note 2)
VIN=3.6V, CIN=1.0μF (Ceramic), C
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
=1.0μF (Ceramic), Typical T
OUT
V
OUT
V
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
V
)/
V 1mA ≤I
)/
3.6V≤V
OUT(MAX)
V△
(V△
I
=25°C, unless otherwise specified (Note 3).
A
V
=3.6V, 1mA≤I
IN
=3.6V,
IN
=2.561V to 2.639V
OUT
=2.6V, VIN=V
OUT
OUT
≤600mA
OUT
≤6V, I
IN
=10mA 5 8
≤30mA
OUT
+1V,
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
OUT
*98.5%
2.6
600 mA
-1 0.2 1 %/A
V
OUT
*101.5%
V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature Coefficient
(△V
OUT/VOUT
Short Current Limit I
RMS Output Noise V
DROP
V
STD
PSRR
)/ △T
V
SHORT
NOISE
=300mA 125 200
OUT
I
=600mA 250 400
OUT
=3.6V, I
IN
=3.6V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p V
=3.6V,
IN
I
=100mA
OUT
I
=30mA
OUT
T
=-40°C to 85°C
A
=0V 50 mA
OUT
o Load, 10Hz≤f≤100kHz 50
=0mA 55 80
OUT
f=100Hz 65
f=1KHz
65
±100 ppm/°C
μV
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Set EN pin at Low 60
DCHG
T
160
OTSD
T
25
HYOTSD
SOT-23-5 96
mV I
μA μA
dB
RMS
V
μs
MΩ
Ω
°C
Thermal Resistance
θJC
°C/WSOIC-8 75
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
9
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-2.8 Electrical Characteristic (Note 2)
VIN=3.8V, CIN=1.0μF (Ceramic), C
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
=1.0μF (Ceramic), Typical T
OUT
V
OUT
V
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
V
)/
V 1mA≤I
)/
3.8V≤V
OUT(MAX)
(V△
(V△
I
=25°C, unless otherwise specified (Note 3).
A
V
=3.8V, 1mA≤I
IN
=3.8V,
IN
=2.758V to 2.842V
OUT
=2.8V, VIN=V
OUT
OUT
≤600mA
OUT
≤6V, I
IN
=10mA 5 8
≤30mA
OUT
+1V,
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
OUT
*98.5%
2.8
600 mA
-1 0.2 1 %/A
V
OUT
*101.5%
V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature Coefficient
(V△
Short Current Limit I
RMS Output Noise V
DROP
V
STD
PSRR
OUT/VOUT
V
SHORT
NOISE
I
Ripple 0.5Vp-p V I
I
)/ T△
T
=300mA 125 200
OUT
=600mA 250 400
OUT
=3.8V, I
IN
=3.8V, VEN in OFF mode 0.01 1.0
IN
=0mA 55 80
OUT
f=100Hz 65
=3.8V,
IN
=100mA
OUT
=30mA
OUT
=-40°C to 85°C
A
=0V 50 mA
OUT
f=1KHz
65
±100 ppm/°C
o Load, 10Hz≤f≤100kHz 50
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Set EN pin at Low 60
DCHG
T
160
OTSD
25
T
HYOTSD
SOT-23-5 96
μV
mV I
μA μA
dB
RMS
V
μs
MΩ
Ω
°C
Thermal Resistance
θJC
°C/WSOIC-8 75
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
10
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1.0μF (Ceramic), C
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
=1.0μF (Ceramic), Typical T
OUT
V
OUT
V
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
V
)/
VIN=4.3V, 1mA≤I
)/
4.3V≤V
OUT(MAX)
(V△
(V△
I
=25°C, unless otherwise specified (Note 3).
A
V
=4.3V, 1mA≤I
IN
=4.3V,
IN
=3.251V to 3.350V
OUT
≤6V, I
IN
=10mA 5 8
OUT
≤30mA
OUT
≤600mA -1 0.2 1 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
OUT
*98.5%
3.3
600 mA
V
OUT
*101.5%
V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature Coefficient
(V△
Short Current Limit I
RMS Output Noise V
DROP
V
STD
PSRR
OUT/VOUT
V
SHORT
NOISE
I
Ripple 0.5Vp-p V I
I
)/ T△
T
=300mA 125 200
OUT
=600mA 250 400
OUT
=4.3V, I
IN
=4.3V, VEN in OFF mode 0.01 1.0
IN
=0mA 55 80
OUT
f=100Hz 65
=4.3V,
IN
=100mA
OUT
=30mA
OUT
=-40°C to 85°C
A
=0V 50 mA
OUT
f=1KHz
65
±100 ppm/°C
o Load, 10Hz≤f≤100kHz 50
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Set EN pin at Low 60
DCHG
T
160
OTSD
25
T
HYOTSD
SOT-23-5 96
μV
mV I
μA μA
dB
RMS
V
μs
MΩ
Ω
°C
Thermal Resistance
θJC
°C/WSOIC-8 75
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
T
=25°C. Over temperature specifications guaranteed by design only.
A
11
Page 12
N
N
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-ADJ Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), C
Parameter Symbol Conditions Min Typ Max Unit
Reference Voltage V
Maximum Output Current
Load Regulation
Line Regulation
Quiescent Current IQ V
(V△
(V△
=1.0μF (Ceramic), Typical TA=25°C, unless otherwise specified (Note 3).
OUT
V
V
REF
I
VIN=2.5V, V
OUT(Max)
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
)/
)/
V
2.5V≤V
=2.5V, 1mA≤I
IN
=2.5V, 1mA≤I
IN
≤6V, I
IN
=2.5V, I
IN
OUT
≤ 30mA
OUT
=0.788V to 0.812V 600 mA
REF
≤600mA -1 0.2 1 %/A
OUT
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 55 80
REF
×98.5%
0.8
V
REF
×101.5%
V
μA
Standby Current I
Power Supply Rejection Ratio
Output Voltage Temperature Coefficient
(V△
Short Current Limit I
RMS Output Noise V
V
STD
PSRR
OUT/VOUT
V
SHORT
NOISE
=2.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p V I
I
)/ T△
T
=2.5V,
IN
=100mA
OUT
=30mA
OUT
=-40°C to 85°C
A
=0V 50 mA
OUT
f=100Hz 65
f=1kHz 65
±100 ppm/°C
o Load, 10Hz≤f≤100kHz 50
μV
μA
dB
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
EN Pull Down Resistor RPD 3.0
VOUT Discharge Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis
Thermal Resistance
Set EN pin at Low 60
R
DCHG
T
160
OTSD
T
HYOTSD
　θ
JC
o Load 20
μs
MΩ
Ω
°C
25
SOT-23-5 96 °C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
12
Page 13
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Typical Performance Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Output Voltage (V)
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
NO Load
TA=-40oC TA=25oC TA=85oC
=1.2V
V
OUT
Figure 5. Output Voltage vs. Input Voltage Figure 6. Output Voltage vs. Input Voltage
70 68 66 64 62 60 58 56 54
Quiescent Current (μA)
52 50 48 46
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
Figure 7. Quiescent Current vs. Temperature Figure 8. Quiescent Current vs. Input Voltage
VIN=2.5V No Load
Temperature (oC)
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
70
60
50
40
30
20
Quiescent Current (μA)
10
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
No Load
=3.3V
V
OUT
No Load
TA=-40OC TA=25OC TA=85OC
TA=-40oC TA=25oC TA=85oC
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
13
Page 14
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Typical Performance Characteristics (Continued)
1.210
1.208
VIN=2.5V
=1μF
C
IN
=1μF
C
OUT
1.206
1.204
Output Voltage (V)
1.202
1.200
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
Temperature (oC)
I I
I I
OUT OUT
OUT OUT
=10mA =100mA
=300mA =600mA
Figure 9. Output Voltage vs. Temperature Figure 10. Output Voltage vs. Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Output Voltage (V)
0.4
0.3
0.2
0.1
0.0
-0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA= -40oC TA=25oC TA=85oC
VIN=2.5V
Output Current (A)
Figure 11. Output Voltage vs. Output Current Figure 12. Output Voltage vs. Output Current
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
14
3.35
3.34
3.33
3.32
3.31
3.30
3.29
Output Voltage (V)
3.28
3.27
3.26
3.25
-40-20 0 20406080
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Output Voltage (V)
0.5
0.0
-0.5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VIN=4.3V
TA=-40oC TA= 25oC TA= 85oC
I
=10mA
OUT
I
=100mA
OUT
I
=300mA
OUT
I
=600mA
OUT
Temperature(oC)
Output Current (A)
VIN=4.3V C
=1μF
IN
=1μF
C
OUT
Page 15
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Typical Performance Characteristics (Continued)
1.2
1.0
0.8
0.6
Output Voltage (V)
0.4
0.2
0.0
VIN=2V
VIN=2.5V
VIN=5V VIN=5.5V VIN=6V
TA=25oC C
IN
C
OUT
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Output Current (A)
=1μF
=1μF
Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current
350
300
250
200
V
OUT
TA=-40oC TA= 25oC TA= 85oC
=3.3V
150
Dropout Voltage (mV)
100
50
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Output Current (A)
Figure 15. Dropout Voltage vs. Output Current Figure 16. Ground Current vs. Output Current
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
15
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
260 240 220 200 180 160 140 120
Ground Current (μA)
100
80 60 40
VIN=4.0V VIN=4.3V VIN=5.0V VIN=5.5V VIN=6.0V
TA=25oC
CIN=1μF C
=1μF
OUT
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Output Current (A)
TA=-40oC TA= 25oC TA= 85oC
=4.3V
V
IN
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Output Current (A)
Page 16
v
A
/
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Typical Performance Characteristics (Continued)
PSRR (dB)
V
IN
(2V/div)
70
65
60
55
I
=10mA
50
45
40
35
30
20
OUT
I
=100mA
OUT
I
=300mA
OUT
=1.2V
V
OUT
VIN=2.5V Ripple=0.5V
100 1k 10k 100k
Frequency (Hz)
Figure 17. PSRR vs. Frequency Figure 18. Load Transient
CH1: V 10mV/di
CH2: I 200m
V
IN
(2V/div)
OUT
OUT
div
VIN=2.5V, CIN=1μF, C
600mA
0mA
OUT
=1μF
V
EN
V
EN
(2V/div)
V
OUT
(2V/div)
20μs/div
(2V/div)
V
OUT
(2V/div)
200μs/div
Figure 19. Enable On Figure 20. Enable Off
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
16
Page 17
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Typical Application (Note 4)
Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0μF ceramic capacitor is selected as input/output capacitors.
Figure 21. AP2112 Typical Application
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
17
Page 18
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Mechanical Dimensions
SOT-23-5 Unit: mm(inch)
2.820(0.111)
0.100(0.004)
0.200(0.008)
0°
8°
)
)
4
8
0
1
1
1
.
.
0
0
(
(
0
0
5
0
6
0
.
.
2
3
0.950(0.037)
P
Y
T
3.100(0.122)
1.800(0.071)
2.000(0.079)
)
9
5
0
.
0
(
0
0
5
.
1
0.300(0.012)
0.500(0.020)
)
7
6
0
.
0
(
0
0
0.200(0.008)
7
.
1
0
0
7
.
0
R
)
)
2
4
1
2
0
0
.
.
0
0
(
(
0
0
0
0
6
3
.
.
0
0
)
8
2
0
.
0
(
F
E
)
7
5
0
.
X
0
A
(
0
M
5
4
.
1
9
.
0
0
0
3
.
1
0
(
0
0
0
.
0 0
5
1
.
0
.
0
(
0
5
0
.
0
(
0
)
0
0
0
.
0
.
0
(
0
)
6
0
3
)
5
)
1
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
18
Page 19
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Mechanical Dimensions (Continued)
SOT-89-5 Unit: mm(inch)
1.400(0.055)
4.400(0.173)
4.600(0.181)
1.600(0.063)
3.950(0.156)
4.250(0.167)
R0.150(0.006)
0.900(0.035)
1.100(0.043)
2.210(0.087)REF
0.320(0.013)
0.540(0.021)
1.030(0.041)REF
Option 1
3.000(0.118) TYP
Option 1
1.550(0.061)REF
45
2.300(0.091)
2.600(0.102)
0.320(0.013)
0.540(0.021)
3
10
0.320(0.013)REF
1.620(0.064)REF
R 0.200(0.008)
3
2.060(0.081)REF
10
0.350(0.014)
0.450(0.018)
Option 2
0.650(0.026)
0.950(0.037)
2.630(0.104)
2.930(0.115)
0.900(0.035)
1.100(0.043)
0.480(0.019) TYP
1.500(0.059)
1.800(0.071)
0.500(0.020)
0.620(0.024)
1.620(0.064)
1.830(0.072)
0.650(0.026)
0.950(0.037)
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
19
Page 20
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Mechanical Dimensions (Continued)
SOIC-8 Unit: mm(inch)
4.700(0.185)
5.100(0.201)
7
°
7
°
1.270(0.050) TYP
0.100(0.004 )
0.300(0.012 )
1.350(0.053)
1.750(0.069)
0.675(0.027)
0.725(0.029)
D
D
0
:
2
0.320(0.013)
5.800(0.228)
6.200(0.244)
1
TYP
°
8
°
8
1.000(0.039) TYP
Option 1
0.300(0.012)
0.510(0.020)
3.800(0.150)
4.000(0.157)
0.150(0.006)
0.250(0.010)
0.900(0.035) TYP
Option 2
R0.150(0.006)
0
°
8
°
1 7
° °
0.450(0.017)
0.800(0.031)
0.350(0.014) TYP
)
6
0
0
.
(
0
0
5
1
.
0
R
Option 1
Note: Eject hole, oriented hole and mold mark is option al
.
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
20
Page 21
BCD Semiconductor Manufacturing Limited
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