600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Data Sheet
General Description
The AP2111 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 600mA (Min) continuous load current.
The AP2111 provides 1.2V, 1.5V, 1.8V, 2.5V, 3.3V,
4.8V regulated output and 0.8V to 5V adjustable
output, and provides excellent output accuracy 1.5%,
it is also provides a excellent load regulation, line
regulation and excellent load transient performance
due to very fast loop response. The AP2111 has
built-in auto discharge function.
The AP2111 features low power consumption.
The AP2111 is available in SOIC-8, PSOP-8
SOT-223 and SOT-23-5 packages.
Features
Output Voltage Accuracy: ±1.5%
•
• Output Current: 600mA (Min)
• Foldback Short Current Protection: 50mA
• Enable Function to Turn On/Off V
• Low Dropout Voltage (3.3V):
250mV (Typ) @ I
• Excellent Load Regulation: 0.2%/A (Typ)
• Excellent Line Regulation: 0.02%/V (Typ)
• Low Quiescent Current: 55μA (Typ)
• Low Standby Current: 0.01μA (Typ)
• Low Output Noise: 50μV
• PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz
• OTSD Protection
• Stable with 1.0μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
• Operating Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
=600mA
OUT
RMS
OUT
Applications
• Laptop computer
• Potable DVD
• LCD Monitor
SOIC-8 PSOP-8
SOT-223 SOT-23-5
Figure 1. Package Types of AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
1
(
(
(SOT
)
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Pin Configuration
GND
VOUT
GND
VIN
SOIC-8)
8
1
2
3
4
EN
GND
7
6
5
GND
GND
H/HA Package
-223
3
VIN
GND
VOUT
GND
M Package
VIN
MP Package
PSOP-8)
1
2
3
4
8
EN
7
GND
6
GND
5
GND
3
VOUT
2
VOUT
1
GND
Figure 2. Pin Configuration of AP2111 (Top View)
EN
GND
VIN
K Package
(SOT-23-5)
ADJ/NC
1
2
34
5
VOUT
2
VIN
1
GND
Pin Descriptions
Pin Number
SOIC-8/PSOP-8 SOT-223(H) SOT-223(HA) SOT-23-5
4 3 2 3 VIN Input voltage
2 2 3 4 VOUT Output voltage
8 1 EN
1, 3, 5, 6, 7 1 1 2 GND Ground
5 ADJ/NC
Pin Name Function
Chip enable, H – normal work, L –
shutdown output
Adjust output for ADJ version/No
connected for fixed version
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Functional Block Diagram
A (B) {C}
A: SOIC-8/PSOP-8
B: SOT-223(H)
C: SOT-223(HA)
Figure 3. Functional Block Diagram of AP2111 for Fixed Version
EN
GND
1
Thermal
Shutdown
3m
2
UVLO &
Shutdown Logic
V
REF
Foldback
Current Limit
3
VIN
4
VOUT
5
ADJ/NC
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
SOT-23-5
Figure 4. Functional Block Diagram of AP2111 for Adjustable Version
3
p
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Ordering Information
AP2111 -
Circuit Type
Package
M: SOIC-8
MP: PSOP-8
H/HA: SOT-223
K: SOT-23-5
Package
SOIC-8
PSOP-8
SOT-223(H)
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
Part Number Marking ID
AP2111M-1.2G1 2111M-1.2G1 Tube
AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel
AP2111M-1.5G1 2111M-1.5G1 Tube
AP2111M-1.5TRG1 2111M-1.5G1 Tape & Reel
AP2111M-1.8G1 2111M-1.8G1 Tube
AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel
AP2111M-2.5G1 2111M-2.5G1 Tube
AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel
AP2111M-3.3G1 2111M-3.3G1 Tube
AP2111M-3.3TRG1 2111M-3.3G1 Tape & Reel
AP2111MP-1.2G1 2111MP-1.2G1 Tube
AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel
AP2111MP-1.5G1 2111MP-1.5G1 Tube
AP2111MP-1.5TRG1 2111MP-1.5G1 Tape & Reel
AP2111MP-1.8G1 2111MP-1.8G1 Tube
AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel
AP2111MP-2.5G1 2111MP-2.5G1 Tube
AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel
AP2111MP-3.3G1 2111MP-3.3G1 Tube
AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel
AP2111H-1.2TRG1 GH11B Tape & Reel
AP2111H-1.5TRG1 GH13G Tape & Reel
AP2111H-1.8TRG1 GH11G Tape & Reel
AP2111H-2.5TRG1 GH11H Tape & Reel
AP2111H-3.3TRG1 GH11C Tape & Reel
AP2111H-4.8TRG1 GH13D Tape & Reel
G1: Green
Blank: Tube
TR: Ta
1.2: Fixed Output 1.2V
e & Reel
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
4.8: Fixed Output 4.8V
ADJ: Adjustable Output
Packing
Type
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Ordering Information (Continued)
Package
SOT-223(HA)
SOT-23-5
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Temperature
Range
-40 to 85°C
-40 to 85°C
Part Number Marking ID
AP2111HA-1.2TRG1 GH11J Tape & Reel
AP2111HA-1.5TRG1 GH14G Tape & Reel
AP2111HA-1.8TRG1 GH11K Tape & Reel
AP2111HA-2.5TRG1 GH11L Tape & Reel
AP2111HA-3.3TRG1 GH11M Tape & Reel
AP2111HA-4.8TRG1 GH11N Tape & Reel
AP2111K-1.5TRG1 G3S Tape & Reel
AP2111K-ADJG1 G3Q Tube
AP2111K-ADJTRG1 G3Q Tape & Reel
Packing
Type
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.5 V
Operating Junction Temperature
Range
Storage Temperature Range T
Lead Temperature (Soldering, 10sec) T
150 ºC
T
J
-65 to 150 ºC
STG
260 ºC
LEAD
SOIC-8 144
PSOP-8 143
Thermal Resistance (No Heatsink)
θ
JA
SOT-223 128
ºC/W
SOT-23-5 250
ESD (Machine Model)
400 V
ESD (Human Body Model) 4000 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Supply Voltage VIN 2.5 6.0 V
Operating Ambient Temperature
Range
-40 85 °C
T
A
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics
AP2111-1.2 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1.0μF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40°C≤T
A
≤85°C
A
Output Voltage V
Maximum Output
Current
Load Regulation
Line Regulation
(V△
(V△
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply
Rejection Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
I
VIN=2.5V, V
OUT(Max)
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
DROP
V
STD
PSRR
OUT/VOUT
T△
V
SHORT
NOISE
=2.5V, 1mA ≤ I
IN
)
=2.5V, 1mA ≤ I
V
IN
)
2.5V≤V
IN
I
=10mA 1000 1300
OUT
=300mA 1000 1300
OUT
I
=600mA 1000 1300
OUT
=2.5V, I
IN
=2.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
=2.5V,
V
IN
I
=100mA
OUT
)
I
=30mA
OUT
=-40°C to 85°C
T
A
=0V 50 mA
OUT
o Load, 10Hz ≤ f ≤100kHz 50
V
≤ 30mA
OUT
=1.182V to 1.218V 600 mA
OUT
≤600mA 0.2 %/A
OUT
≤6V, I
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
OUT
×98.5%
1.2
V
OUT
×101.5%
f=100Hz 65
f=1kHz 65
±100
ppm/°C
μV
V
mV I
μA
μA
dB
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
EN Pull Down Resistor RPD 3.0
VOUT Discharge
Resistor
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
Set EN pin at Low 60
R
DCHG
T
160
OTSD
T
HYOTSD
θ
JC
o Load 20
μs
mΩ
Ω
°C
30
SOIC-8 74.6
PSOP-8 43.7
°C /W
SOT-223 50.9
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics (Continued)
AP2111-1.5 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1.0μF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40°C≤T
A
≤85°C
A
Output Voltage V
Maximum Output
Current
Load Regulation
Line Regulation
(V△
(V△
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply
Rejection Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
I
VIN=2.5V, V
OUT(Max)
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
DROP
V
STD
PSRR
OUT/VOUT
T△
V
SHORT
NOISE
=2.5V, 1mA ≤ I
IN
)
=2.5V, 1mA ≤ I
V
IN
)
2.5V≤V
IN
I
=10mA 700 1000
OUT
=300mA 700 1000
OUT
I
=600mA 700 1000
OUT
=2.5V, I
IN
=2.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
=2.5V,
V
IN
I
=100mA
OUT
)
I
=30mA
OUT
=-40°C to 85°C
T
A
=0V 50 mA
OUT
o Load, 10Hz ≤ f ≤100kHz 50
V
≤ 30mA
OUT
=1.478V to 1.523V 600 mA
OUT
≤600mA 0.2 %/A
OUT
≤6V, I
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
OUT
×98.5%
1.5
V
OUT
×101.5%
f=100Hz 65
f=1kHz 65
±100
ppm/°C
μV
V
mV I
μA
μA
dB
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
EN Pull Down Resistor RPD 3.0
VOUT Discharge
Resistor
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Set EN pin at Low 60
R
DCHG
T
160
OTSD
T
HYOTSD
o Load 20
μs
mΩ
Ω
°C
30
SOIC-8 74.6
Thermal Resistance
(Junction to Case)
θ
JC
PSOP-8 43.7
SOT-223 50.9
°C /W
SOT-23-5 150
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
8
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics (Continued)
AP2111-1.8 Electrical Characteristic (Note 2)
VIN=2.8V, CIN=1μF (Ceramic), C
unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤T
OUT
≤85°C ranges,
A
Output Voltage V
Maximum Output Current I
Load Regulation
(V△
(V△
Line Regulation
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection
Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
V
OUT
OUT(Max)
OUT/VOUT
△I
OUT/VOUT
△V
)
OUT
)
IN
DROP
V
STD
PSRR
OUT/VOUT
)
T△
V
SHORT
=2.8V, 1mA ≤ I
IN
=2.8V,
V
IN
=1.773V to 1.827V
V
OUT
=1.8V, VIN=V
V
OUT
1mA ≤ I
OUT
2.8V≤VIN≤6V, I
I
=10mA 500 700
OUT
=300mA 500 700
OUT
I
=600mA 500 700
OUT
=2.8V, I
IN
=2.8V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
VIN=2.8V,
=100mA
I
OUT
I
=30mA
OUT
=-40°C to 85°C
T
A
=0V 50 mA
OUT
OUT
≤ 30mA
V
OUT
×98.5%
1.8
V
OUT
×101.5%
600 mA
+1V,
≤600mA
OUT
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
0.2 %/A
f=100Hz 65
f=1kHz
65
±100
ppm/°C
V
mV I
μA
μA
dB
RMS Output Noise V
NOISE
o Load, 10Hz ≤ f ≤100kHz 50
μV
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
EN Pull Down Resistor RPD 3.0
VOUT Discharge Resistor R
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
Set EN pin at Low 60
DCHG
160
T
OTSD
T
30
HYOTSD
θ
JC
o Load 20
μs
mΩ
Ω
°C
SOIC-8 74.6
PSOP-8 43.7
°C /W
SOT-223 50.9
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
9
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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics (Continued)
AP2111-2.5 Electrical Characteristic (Note 2)
VIN=3.5V, CIN=1μF (Ceramic), C
unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤T
OUT
≤85°C ranges,
A
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
(V△
(V△
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection
Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
OUT(Max)
OUT/VOUT
△I
OUT/VOUT
△V
)
OUT
)
IN
DROP
V
STD
PSRR
OUT/VOUT
)
T△
V
SHORT
NOISE
=3.5V, 1mA ≤ I
IN
=3.5V, V
V
IN
2.537V
=2.5V, VIN=V
V
OUT
1mA ≤ I
OUT
3.5V≤V
IN
I
=10mA 5 8
OUT
=300mA 125 200
OUT
I
=600mA 250 400
OUT
=3.5V, I
IN
=3.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
=3.5V,
V
IN
=100mA
I
OUT
=30mA
I
OUT
T
=-40°C to 85°C
A
=0V 50 mA
OUT
o Load, 10Hz ≤ f ≤100kHz 50
V
≤ 30mA
OUT
=2.463V to
OUT
+1V,
OUT
≤600mA
≤6V, I
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
OUT
×98.5%
2.5
600 mA
0.2 %/A
V
OUT
×101.5%
f=100Hz 65
f=1kHz
65
±100
ppm/°C
μV
V
mV I
μA
μA
dB
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
EN Pull Down Resistor RPD 3.0
VOUT Discharge Resistor R
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
Set EN pin at Low 60
DCHG
160
T
OTSD
T
30
HYOTSD
θ
JC
o Load 20
μs
mΩ
Ω
°C
SOIC-8 74.6
°C /WPSOP-8 43.7
SOT-223 50.9
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
10
N
N
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics (Continued)
AP2111-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1μF (Ceramic), C
unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤T
OUT
≤85°C ranges,
A
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
(V△
(V△
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection
Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
OUT(Max)
OUT/VOUT
△I
OUT/VOUT
△V
)
OUT
)
IN
DROP
V
STD
PSRR
OUT/VOUT
)
T△
V
SHORT
NOISE
=4.3V, 1mA ≤ I
IN
=4.3V, V
V
IN
3.350V
=4.3V, 1mA ≤ I
V
IN
4.3V≤V
IN
I
=10mA 5 8
OUT
=300mA 125 200
OUT
I
=600mA 250 400
OUT
=4.3V, I
IN
=4.3V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
=4.3V,
V
IN
=100mA
I
OUT
=30mA
I
OUT
T
=-40°C to 85°C
A
=0V 50 mA
OUT
o Load, 10Hz ≤ f ≤100kHz 50
V
≤ 30mA
OUT
=3.251V to
OUT
≤600mA 0.2 %/A
OUT
≤6V, I
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
OUT
×98.5%
3.3
600 mA
V
OUT
×101.5%
f=100Hz 65
f=1kHz
65
±100
ppm/°C
μV
V
mV I
μA
μA
dB
RMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
EN Pull Down Resistor RPD 3.0
VOUT Discharge Resistor R
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
Set EN pin at Low 60
DCHG
160
T
OTSD
T
30
HYOTSD
θ
JC
o Load 20
μs
mΩ
Ω
°C
SOIC-8 74.6
PSOP-8 43.7
°C /W
SOT-223 50.9
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at
T
=25°C. Over temperature specifications guaranteed by design only.
A
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
11
N
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics (Continued)
AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223)
VIN=5.5V, CIN=1μF (Ceramic), C
unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤T
OUT
≤85°C ranges,
A
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
(V△
(V△
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejection
Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
V
OUT
OUT(Max)
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
DROP
V
STD
=5.5V, 1mA ≤ I
IN
=5.5V, V
V
IN
4.850V
)
=5.5V, 1mA ≤ I
V
IN
)
5.5V≤V
IN
I
=10mA 5 8
OUT
=300mA 100 200
OUT
I
=600mA 200 400
OUT
=5.5V, I
IN
=5.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
PSRR
OUT/VOUT
T△
V
SHORT
NOISE
160
T
OTSD
T
30
HYOTSD
θ
JC
=5.5V,
V
IN
I
=100mA
OUT
)
=30mA
I
OUT
T
=-40°C to 85°C
A
=0V 50 mA
OUT
o Load, 10Hz ≤ f ≤100kHz 50
SOT-223 50.9
V
≤ 30mA
OUT
=4.751V to
OUT
≤600mA 0.2 %/A
OUT
≤6V, I
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
OUT
×98.5%
4.8
600 mA
f=100Hz 65
f=1kHz
65
±100
V
OUT
×101.5%
ppm/°C
μV
V
mV I
μA
μA
dB
RMS
°C
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at
T
=25°C. Over temperature specifications guaranteed by design only.
A
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
12
N
N
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Electrical Characteristics (Continued)
AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5)
VIN=2.5V, CIN=1.0μF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Conditions Min Typ Max Unit
=1.0μF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40°C≤T
A
≤85°C
A
Reference Voltage V
Maximum Output
Current
Load Regulation
Line Regulation
(V△
(V△
Quiescent Current IQ V
Standby Current I
Power Supply
Rejection Ratio
Output Voltage
(V△
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
REF
I
VIN=2.5V, V
OUT(Max)
OUT/VOUT
△I
OUT
OUT/VOUT
△V
IN
V
STD
PSRR
OUT/VOUT
T△
V
SHORT
NOISE
=2.5V, 1mA ≤ I
IN
)
=2.5V, 1mA ≤ I
V
IN
)
2.5V≤V
IN
=2.5V, I
IN
=2.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 0.5Vp-p
=2.5V,
V
IN
I
=100mA
OUT
)
I
=30mA
OUT
=-40°C to 85°C
T
A
=0V 50 mA
OUT
o Load, 10Hz ≤ f ≤100kHz 50
V
≤ 30mA
OUT
=0.788V to 0.812V 600 mA
REF
≤600mA 0.2 %/A
OUT
≤6V, I
=30mA 0.02 %/V
OUT
=0mA 55 80
OUT
REF
×98.5%
0.8
f=100Hz 65
f=1kHz 65
±100
V
REF
×101.5%
ppm/°C
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
o Load 20
μV
V
μA
μA
dB
RMS
V
μs
EN Pull Down Resistor RPD 3.0
VOUT Discharge
Resistor
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
Set EN pin at Low 60
R
DCHG
T
160
OTSD
T
30
HYOTSD
θ
JC
SOT-23-5 150 °C /W
mΩ
Ω
°C
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
13
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Typical Performance Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Output Voltage (V)
0.4
0.2
0.0
0.00.51.01.52.02.53.03.54.04.55.05.56.0
Input Voltage (V)
No Load
TA=-40oC
TA=25oC
TA=85oC
=1.2V
V
OUT
Figure 5. Output Voltage vs. Input Voltage Figure 6. Output Voltage vs. Input Voltage
5.0
4.5
V
=4.8V
OUT
T
=25OC
4.0
Output Voltage (V)
A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
I
=0mA
OUT
I
=100mA
OUT
I
=300mA
OUT
I
=600mA
OUT
Input Voltage (V)
Figure 7. Output Voltage vs. Input Voltage Figure 8. Quiescent Current vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
0.00.51.01.52.02.53.03.54.04.55.05.56.0
Input Voltage (V)
70
68
66
64
62
60
58
56
54
Quiescent Current (μA)
52
50
48
46
-40-200 20406080
Temperature (oC)
No Load
TA=-40oC
TA=25oC
TA=85oC
V
=3.3V
OUT
VIN=2.5V
No Load
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
14
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Typical Performance Characteristics (Continued)
70
60
50
40
30
20
Quiescent Current (μA)
10
0
1.01.52.02.53.03.54.04.55.05.56.0
Figure 9. Quiescent Current vs. Input Voltage Figure 10. Output Voltage vs. Temperature
Input Voltage (V)
No Load
TA=-40oC
TA=25oC
TA=85oC
1.210
1.208
1.206
1.204
Output Voltage (V)
1.202
1.200
-40 -20 0 20 40 60 80
Temperature (oC)
3.35
3.34
3.33
3.32
3.31
3.30
3.29
Output Voltage (V)
3.28
3.27
3.26
3.25
-40-200 20406080
Figure 11. Output Voltage vs. Temperature Figure 12. Output Voltage vs. Output Current
Temperature (oC)
I
I
I
I
VIN=4.3V
C
=1μF
IN
C
OUT
=10mA
OUT
=100mA
OUT
=300mA
OUT
=600mA
OUT
=1μF
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Output Voltage (V)
0.4
0.3
0.2
0.1
0.0
-0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Output Current (A)
VIN=2.5V
C
=1μF
IN
=1μF
C
OUT
I
OUT
I
OUT
I
OUT
I
OUT
VIN=2.5V
TA= -40oC
TA=25oC
TA=85oC
=10mA
=100mA
=300mA
=600mA
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
15
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Typical Performance Characteristics (Continued)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Output Voltage (V)
0.5
0.0
-0.5
0.00.10.20.30.40.50.60.70.80.91.0
Output Current (A)
VIN=4.3V
TA=-40oC
TA= 25oC
TA= 85oC
1.2
1.0
0.8
0.6
Output Voltage (V)
0.4
0.2
0.0
VIN=2.0V
VIN=2.5V
VIN=5.0V
VIN=5.5V
VIN=6.0V
TA=25oC
C
IN
C
OUT
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Output Current (A)
=1μF
=1μF
Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
VIN=4.0V
VIN=4.3V
VIN=5.0V
VIN=5.5V
VIN=6.0V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Output Current (A)
TA=25oC
=1μF
C
IN
=1μF
C
OUT
5.0
4.5
V
=4.8V
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
OUT
VIN=5.0V
VIN=5.3V
VIN=5.5V
VIN=6.0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Output Current (A)
Figure 15. Output Voltage vs. Output Current Figure 16. Output Voltage vs. Output Current
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
16
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Typical Performance Characteristics (Continued)
17
350
V
=4.8V
OUT
300
250
200
150
100
Dropout Voltage (V)
50
0
70
65
60
55
50
PSRR (dB)
45
40
35
30
TA=-40OC
TA=25OC
TA=85OC
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Output Current (A)
VIN=2.5V
Ripple=0.5V
V
=1.2V
OUT
I
=10mA
OUT
I
=100mA
OUT
I
=300mA
OUT
20
100 1k 10k 100k
Frequency (Hz)
350
V
=3.3V
300
250
200
150
Dropout Voltage (mV)
100
OUT
TA=-40oC
TA= 25oC
TA= 85oC
50
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Output Current (A)
Figure 17. Dropout Voltage vs. Output Current Figure 18. Dropout Voltage vs. Output Current
260
240
VIN=4.3V
220
200
180
160
140
120
Ground Current (μA)
100
80
60
40
0.0 0.1 0.2 0.3 0.4 0.5 0.6
TA=-40oC
TA= 25oC
TA= 85oC
Output Current (A)
Figure 19. Ground Current vs. Output Current Figure 20. PSRR vs. Frequency
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Typical Performance Characteristics (Continued)
Figure 21.
Figure 23. Enable Off
Load Transient Figure 22. Enable On
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
18
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Typical Application (Note 4)
Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0μF ceramic capacitor is selected as
input/output capacitors.
Figure 24. Typical Application of AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
19
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Mechanical Dimensions
SOIC-8 Unit: mm(inch)
1.000(0.039)
4.700(0.185)
5.100(0.201)
7
°
7
°
1.270(0.050)
TYP
0.100(0.004)
0.300(0.012)
1.350(0.053)
1.750(0.069)
0.675(0.027)
0.725(0.029)
R0.150(0.006)
3.800(0.150)
4.000(0.157)
D
2
°
0
°
8
D
0
1
:
0.320(0.013)
5.800(0.228)
6.200(0.244)
0.800(0.031)
°
8
°
8
0.200(0.008)
0.330(0.013)
0.510(0.020)
0.190(0.007)
0.250(0.010)
0.900(0.035)
1°
5°
0.450(0.017)
0.800(0.031)
)
6
0
0
.
0
(
0
5
1
.
0
R
Note: Eject hole, oriented hole and mold mark is optional.
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
20
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Mechanical Dimensions (Continued)
PSOP-8 Unit: mm(inch)
3.202(0.126)
3.402(0.134)
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
21
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Mechanical Dimensions (Continued)
SOT-223 Unit: mm(inch)
6.700(0.264)
7.300(0.287)
3.300(0.130)
3.700(0.146)
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
22
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Mechanical Dimensions (Continued)
SOT-23-5 Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.950(0.037)
Y
T
P
1.800(0.071)
2.000(0.079)
0.300(0.012)
0.400(0.016)
0
0
9
.
0
3
.
1
0
0
.
0
0
0
5
1
.
0
.
0
(
0
.
0
(
0
0
0.200(0.008)
0
(
0
.
0
0
7
.
0
0
3
5
2
E
F
R
0
0
.
0
(
)
0
0
.
0
(
0
)
6
)
5
)
1
8
)
0°
8°
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
23
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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