Page 1
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
General Description
The AH211 is an integrated Hall sensor with output
driver and frequency generator designed for electronic
commutation of brush-less DC motor applications. The
device includes an on-chip Hall sensor for magnetic
sensing, an amplifier that amplifies the Hall voltage, a
Schmitt trigger to provide switching hysteresis for
noise rejection, a temperature compensation circuit to
compensate the temperature drift of Hall sensitivity,
two complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap
regulator which is used to provide bias voltage for
internal circuits.
Place the device in a variable magnetic field, while the
magnetic flux density is larger than threshold BOP, DO
will be turned on (low) and DOB (and FG) will be
turned off (high). This output state is held till the magnetic flux density reversal falls below BRP causing DO
to be turned off (high) and DOB (and FG) turned on
(low).
AH211 is available in TO-94 (SIP-4L) package.
Features
· On-Chip Hall Sensor
· 3.5V to 16V Supply Voltage
· 400mA (avg) Output Sink Current
o
· -20
· Built-in FG Output
· Low Profile TO-94 (SIP-4L) Package
· ESD Rating: 600V (Machine Model)
C to 85oC Operating Temperature
Applications
· Dual-Coil Brushless DC Motor
· Dual-Coil Brushless DC Fan
· Revolution Counting
· Speed Measurement
TO-94
Figure 1. Package Type of AH211
Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Pin Configuration
Z4 Package
(TO-94)
Pin Description
Pin Number Pin Name Function
1 FG Frequency Generation
2 DO Output 1
3 DOB Output 2
4 GND Ground
4
3
2
1
Figure 2. Pin Configuration of AH211 (Front View)
GND
DOB
DO
FG
Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Functional Block Diagram
Regulator
Hall
Sensor
Amplifier
Ordering Information
Temperature
Compensation
Schmitt
Trigger
1
FG
Figure 3. Functional Block Diagram of AH211
Output
Driver
2
DO
3
DOB
4
GND
AH211 -
Circuit Type
Package
Z4: TO-94 (SIP-4L)
E1: Lead Free
G1: Green
Magnetic Characteristics
A: 5 to 60 Gauss
B: 90 Gauss
Package
TO-94
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green package.
Temperature
Range
o
-20 to 85
C
Lead Free Green Lead Free Green
AH211Z4-AE1 AH211Z4-AG1 AH211 AH211Z4-G1 Bulk
AH211Z4-BE1 AH211Z4-BG1 AH211 AH211Z4-G1 Bulk
Part Number Marking ID
Packing
Typ e
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Absolute Maximum Ratings (Note 1)
(T
=25oC)
A
Parameter Symbol Value Unit
Supply Voltage V
CC
20 V
Magnetic Flux Density B Unlimited Gauss
400 mA
Output Current
Continuous
Hold 600 mA
I
O
Peak (Start up) 800 mA
FG Voltage V
FG Current I
Power Dissipation P
Die to Atmosphere θ
FG
FG
D
JA
30 V
20 mA
550 mW
227
o
C/W
Thermal Resistance
Die to Package Case θ
Storage Temperature T
JC
STG
49
-50 to 150
o
C/W
o
C
ESD (Machine Model) 600 V
ESD (Human Body Model) 6000 V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Recommended Operating Conditions
(TA=25oC)
Parameter Symbol Min Max Unit
Supply Voltage
Ambient Temperature
V
CC
T
A
Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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3.5 16 V
-20 85
o
C
Page 5
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
B>150Gauss, VCC=3.5V,
, IDO=100mA
, I
, IDO=400mA
=400mA)
DOB
=3.5V,
CC
=100mA)
DO=VCC
1.1 V
,
1.05 1.3 V
Output Saturation Voltage
V
DOB=VCC
(or B<-150Gauss, V
V
DO=VCC
V
SAT
B>150Gauss,
V
DOB=VCC
(or B<-150Gauss, V
I
DOB
FG Saturation Voltage
FG Leakage Current
Supply Current
V
SATF
I
OLF
I
Output Rise Time tr R
Output Fall Time tf R
Switch Time Differential ∆tR
Output Zener Breakdown Voltage V
B<-150Gauss, VDO=VCC,
I
=20mA
FG
B>150Gauss, V
=16V
V
FG
B>150Gauss, V
CC
(or B<-150Gauss, V
=1kΩ, C L=10pF 3.0 10 µs
L
=1kΩ, C L=10pF 0.3 1.0 µs
L
=1kΩ, C L=10pF 3.0 10 µs
L
Z
DOB=VCC
DOB=VCC
DO=VCC
0.35 0.6 V
,
,
)
0.1 10 µA
48m A
31 V
Magnetic Characteristics
(TA=25oC)
Parameter Symbol Grade Min Typ Max Unit
Operating Point
Releasing Point
Hysteresis B
B
B
OP
RP
HYS
A 5 30 60 Gauss
B9 0 G a u s s
A- 6 0- 3 0- 5G a u s s
B -90 Gauss
60 Gauss
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Magnetic Characteristics (Continued)
+14V
S
Marking Side
N
DO (V)
V
CC
-40 -20 0 20 40
Magnetic Flux Density B (Gauss)
16
14
12
10
8
6
4
2
FG
12
R1
1kΩ
R2
1kΩ
R3
1kΩ
Figure 4. Basic Test Circuit
V
SAT
C1
10pF
V
SAT
-40 -20 0 20 40
AH211
DO DOB GND
4
3
C2 C3
10pF 10pF
DOB (V)
16
14
12
10
8
6
4
2
Magnetic Flux Density B (Gauss)
FG (VFG)
DO (V
DOB (V
OUT1
OUT2
)
)
V
CC
Figure 5. V
vs. Magnetic Flux Density
DO
Figure 6. V
vs. Magnetic Flux Density
DOB
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Typical Performance Characteristics
4.4
4.2
4.0
3.8
3.6
(mA)
3.4
CC
I
3.2
3.0
2.8
2.6
2.4
4 6 8 1 01 21 41 61 8
I
PIN2
I
PIN3
VCC (V)
Figure 7. I
80
60
40
CC
vs. V
CC
TA=25oC
80
60
40
(GS)
20
HYS
/B
RP
0
/B
OP
B
-20
-40
-60
4.0 6.0 8.0 10.0 12.0 14.0 16.0
B
OP
B
RP
B
HYS
VCC (V)
800
600
Figure 8. B
OP/BRP/BHYS
vs. V
CC
20
(Gauss)
HYS
/B
0
RP
/B
OP
B
-20
-40
-60
B
OP
B
RP
B
HYS
- 2 0- 1 00 1 02 03 04 05 06 07 08 0
TA (oC)
Figure 9. BOP/BRP/B
vs. Ambient Temperature
HYS
400
(mW)
D
P
200
0
-25 0 25 50 75 100 125 150
TA (oC)
Figure 10. PD vs. Ambient Temperature
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Typical Performance Characteristics (Continued)
5.5
5.0
4.5
4.0
(mA)
3.5
CC
I
3.0
2.5
2.0
- 4 0- 2 00 2 04 06 08 0
I
PIN2
I
PIN3
VCC=14V
TA (oC)
Figure 11. Supply Current vs. Ambient Temperature
250
200
150
(mV)
SATF
V
100
1100
VCC=14V
I
=400mA
1050
V
1000
(mV)
SAT
V
950
900
- 4 0- 2 0 0 2 04 06 08 0
V
OUT
PIN2
PIN3
TA (oC)
Figure 12. V
320
300
280
V
I
OUT
PIN2
=20mA
vs. Ambient Temperature
SAT
=14V
(mV)
SATF
V
260
50
0
0 5 10 15 20
I
(mA)
OUT
Figure 13. FG Saturation Voltage vs.
Output Current
240
220
-40 -20 0 20 40 60 80
TA (oC)
Figure 14. FG Saturation Voltage vs.
Ambient Temperature
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Application Information
Figure 15 is the typical application circuit for AH211.
Usually, there are three wires for fan connection: the
red is input of power supply; the yellow is the output of
FG; the black is the ground. R1 is an external pull-up
resister for the use of measuring FG signal from fan.
The value of R1 could be decided by the transistor
saturation voltage (V
up voltage (V
R1=(V
DD-VON
). The calculation formula is:
DD
) / IFG
), sink current (IFG), and pull-
ON
According AH211's specification, if V
=5V, R1 must
DD
be larger than 220Ω.
D1 is the reverse protection diode. If the red and black
wires reversely connected, the current will flow from
the ground via IC and coils L1 and L2 to power supply.
Under such circumstances, the IC and coils are easy to
be burned out. Therefore, the reverse protection diode
D1is necessary. However, D1 will also cause an extra
voltage drop on the supply voltage.
For example:
=5V for TTL level.
V
DD
If saturation voltage is 0.6V (IC specification)
=20mA ( ≤ 20mA) , then R1=220Ω ;
I
FG
If saturation voltage is 0.1V, I
=1mA (=<20mA) , the
FG
value of R1=4.9kΩ
VCC (Red Wire)
C1
FG
12
V
DD
R1 1kΩ
C1 is a capacitor to reduce the ripple noise caused by
the transient of the output stages. The amplitude of the
ripple noise depends on the coil impedance and its
characteristics.
D1
AH211
COIL1 COIL2
DO DOB GND
4
3
FG (Yellow Wire)
GND (Black Wire)
Figure 15. AH211 Typical Application Circuit
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211
Mechanical Dimensions
Unit: mm(inch) TO-94
0.500(0.020)
0.700(0.028)
1.520(0.059)
1.720(0.067)
0.700(0.028)
0.900(0.035)
1.250(0.050)
Package Sensor Location
14.000(0.550)
15.300(0.602)
3.780(0.149)
4.080(0.161)
4.980(0.196)
5.280(0.208)
1.850(0.073)
0.380(0.015)
0.550(0.022)
45° TYP
0.360(0.014)
0.510(0.020)
3.450(0.136)
3.750(0.148)
0.360(0.014)
0.500(0.020)
1.270(0.050) TYP
3.710(0.146)
3.910(0.154)
Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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BCD Semiconductor Manufacturing Limited
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