Diodes AF15N50 User Manual

50V N-Channel MOSFET AF15N50

Data Sheet

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency and to
minimize switch node ringing of DC-DC converters
using either synchronous or conventional switching
PWM controllers. It has been optimized for low gate
charge, low R
diode reverse recovery performance.

The AF15N50 is available in PDFN-5×6-8 package.

, fast switching speed and body

DS(ON)

Features

• Typ R

• Typ R

• RoHS Compliant

=14.32m @ VGS=10V, ID=15A

DS(ON)

=16.36m @ VGS=4.5V, ID=15A

DS(ON)

Applications

• Primary Switch in Isolated DC-DC

• Synchronous Rectifier

• Load Switch

Option 1 Option 2

Figure 1. Package Type of AF15N50

PDFN-5×6-8

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Data Sheet

50V N-Channel MOSFET AF15N50

Pin Configuration

DNP Package
(PDFN-5×6-8)

Option 1 Option 2

Internal Structure

Figure 2. Pin Configuration of AF15N50 (Top View)

Figure 3. Internal Structure of AF15N50

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Data Sheet

50V N-Channel MOSFET AF15N50

Ordering Information

AF15N50 -

Circuit Type G1: Green

Package
DNP:

PDFN-5×6-8 TR: Tape & Reel

Package Part Number Marking ID Packing Type

PDFN-5×6-8 AF15N50DNPTR-G1 15N50DNP-G1 Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.

Absolute Maximum Ratings (Note 1)

TC=25°C, unless otherwise specified.

Parameter Symbol Value Unit

Drain to Source Voltage VDS 50 V

T

=25ºC 15

Continuous Drain Current ID

Pulsed Drain Current IDM 60 A
Gate to Source Voltage VGS ±12 V
Power Dissipation PD 31 W

C

TC=100ºC 15

A

Operating T em perature Range TOP -55 to 150 ºC
Storage Temperature Range T

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.

-55 to 150 ºC

STG

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BCD Semiconductor Manufacturing Limited

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Data Sheet

50V N-Channel MOSFET AF15N50

Recommended Operating Conditions

Parameter Symbol Condition Value Unit

Thermal Resistance (Note 2)
Thermal Resistance

Note 2: Device mounted on FR-4 substrate PC boar d, 2 oz cop pe r, wi t h 1i n ch sq uare pad.



JA

JC

Junction to

Ambient

Junction to Case 4

50

C/W
C/W

Electrical Characteristics

TC=25°C, unless otherwise specified.

Static Characteristics

Parameters Symbol Conditions Min Typ Max Unit

Drain to Source
Breakdown Voltage

Gate Threshold Voltage V
Zero Gate Voltage

Drain Current
Gate to Source
Leakage Current

Drain to Source
On-state Resistance

V

R

VGS=0V, ID=0.25mA 50 V

DSS(BR)

VDS=VGS, ID=0.25mA 0.5 0.9 2 V

GS(TH)

VDS=50V, VGS=0V 1

I

DSS

VGS=10V, VDS=0V ±10

I

GSS

V

=10V, ID=15A 10 14.32 20

GS

DS(ON)

VGS=4.5V, ID=15A 12 16.36 30

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A

A

m

Data Sheet

50V N-Channel MOSFET AF15N50

Electrical Characteristics (Continued)

TC=25°C, unless otherwise specified.

Dynamic Characteristics

Parameters Symbol Conditions Min Typ Max Unit

V

=0V, VDS=18V,

Input Capacitance C

Output Capacitance C

Reverse Transfer
Capacitance

GS

f=1MHz

iss

VGS=0V, VDS=25V,
f=1MHz
V

=0V, VDS=18V,

GS

f=1MHz

oss

VGS=0V, VDS=25V,
f=1MHz
V

=0V, VDS=18V,

GS

f=1MHz

C

rss

VGS=0V, VDS=25V,
f=1MHz

1350

pF

1316

110

pF

97

95

pF

85

Turn-on Delay Time t
Rise Time tr 14.85
Turn-off Delay Time t

d(on)

=10V, ID=15A,

V

GS

=25V, RG=6

V

35.452

d(off)

DD

4.162

ns

Fall Time tf 31.108
Gate to Source Charge Qgs

Gate to Drain Charge
(Miller Charger)

Q

gd

=0V to 10V,

V

5.7

GS

=25V, ID=15A

V

DD

3.2

nC

Total Gate Charge Qg 15.2
Gate Resistance Rg 0.85



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BCD Semiconductor Manufacturing Limited

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Data Sheet

50V N-Channel MOSFET AF15N50

Typical Performance Characteristics

TC=25°C, unless otherwise noted.

14

12

10

8

6

, Drain Current (A)

D

I

4

2

0

-2
012345

VDS, Drain to Source Voltage (V)

10000

1000

100

Junction Capacitance (pF)

10

0 5 10 15 20 25 30 35 40

VDS, Drain to Source Voltage (V)

Figure 4. On Region Characteristics

Figure 5. Typical Junction Capacitance

0.05

0.04

0.03

0.02

0.01

, Drain to Source On-resistance ()

DS(ON)

R

0.00
234567891011

ID=15A

V

, Gate to Source Voltage (V)

GS

-55oC
25oC
85oC
125oC
150oC

100

10

1

0.1

0.01

, Source Current (A)

S

I

1E-3

1E-4

1E-5

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source to Drain Voltage (V)

Figure 6. Typical Transfer Characteristics Figure 7. Source to Drain Diode Forward Voltage

f=1MHz

C

Ave

iss

C

Ave

oss

C

Ave

rss

25oC
125oC

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Data Sheet

50V N-Channel MOSFET AF15N50

Typical Performance Characteristics

TC=25°C, unless otherwise noted.

10

8

6

4

, Gate to Source Voltage (V)

2

GS

V

0

0 5 10 15 20 25 30 35

Qg, Gate Charge (nC)

Figure 8. Gate Charge Characteristics Figure 9. R

, Drain Current (A)

D

I

DC

100

PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms

10

PW=100s

R

DS(ON)

1

T

=150oC

J(MAX)

0.1

0.01

0.01 0.1 1 10 100

TA=25oC
Single Pulse
DUT on 1*MRP Board
VGS=10V

VDS, Drain to Source Voltage (V)

Figure 10. SOA, Safe Operation Area Figure 11. Normalized On-resistance vs. T

VDS=25V
ID=15A

18

17

16

15

14

13

12

, Drain to Source On-resistance (m)

11

DS(ON)

R

10

0 2 4 6 8 101214161820

ID, Continuous Drain Current (A)

DS(ON)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Normalnized Drain to Source On-resistance (m)

-50 0 50 100 150

TJ, Junction Temperature (oC)

VGS=10V
VGS=4.5V

vs. Continuous Drain Current

VGS=4V
VGS=10V

I

=15A

D

J

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Data Sheet

50V N-Channel MOSFET AF15N50

Mechanical Dimensions

PDFN-5×6-8 Unit: mm(inch)

1.000(0.039)

1.200(0.047)

5.600(0.220)

6.000(0.236)

0.060(0.002)

0.200(0.008)

1.20±0.10

DEPTH

4.700(0.185)

5.100(0.201)

+0

0.05

-0.05

D

0.100(0.004)
MAX

Option 1

0.900(0.035)

1.100(0.043)

E

0.210(0.008)

0.340(0.013)

0.510(0.020)
MIN

0.330(0.013)

0.510(0.020)

3.820(0.150)

4.020(0.158)

3.180(0.125)

3.540(0.139)

1.170(0.046)

1.370(0.054)

Option 1

0.510(0.020)

0.710(0.028)

0.510(0.020)

0.710(0.028)

8

12

Symbol

Option1
Option2

min(mm) max(mm)min(inch) max(inch)

--

5.150(BSC)

5.100

D

--

0.203(BSC)

min(mm) max(mm) min(inch) max(inch)

0.201

5.900

6.150(BSC)

6.100 0.232

E

0.240

0.242(BSC)

Option 2

1.000(0.039)

1.400(0.055)

3.700(0.146)

4.100(0.161)

3.280(0.129)

3.680(0.145)

Pin 1 Mark

Aug. 2013 Rev. 1. 0

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