The 74LVCE1G32 is a single 2-input positive OR gate with a
standard totem pole output. The device is designed for
operation with a power supply range of 1.4V to 5.5V. The
inputs are tolerant to 5.5V allowing this device to be used in a
mixed voltage environment. The device is fully specified for
partial power down applications using I
disables the output preventing damaging current backflow
when the device is powered down.
The gate performs the positive Boolean function:
Y+= or B
B
Y•=
OFF
. The I
OFF
circuitry
A
B
GND
Features
NEW PRODUCT
• Extended Supply Voltage Range from 1.4 to 5.5V
• Switching speed characterized for operation at 1.5V
• Offers 30% speed improvement over LVC at 1.8V.
• ± 24mA Output Drive at 3.3V
• CMOS low power consumption
• IOFF Supports Partial-Power-Down Mode Operation
• Inputs accept up to 5.5V
• ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
• Latch-Up Exceeds 100mA per JESD 78, Class II
• Range of Package Options
• Direct Interface with TTL Levels
• SOT25, SOT353, and DFN1410: Assembled with “Green”
Molding Compound (no Br, Sb)
• Lead Free Finish/ RoHS Compliant (Note 1)
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.
Applications
• Voltage Level Shifting
• Bus Driver / Repeater
• Power Down Signal Isolation
• General Purpose Logic
• Wide array of products such as.
o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM
o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS
o MP3 players ,Cameras, Video Recorders
VI Input Voltage Range -0.5 to 6.5 V
Vo Voltage applied to output in high impedance or I
Vo Voltage applied to output in high or low state -0.3 to VCC +0.5 V
IIK Input Clamp Current VI<0 -50 mA
IOK Output Clamp Current -50 mA
IO Continuous output current ±50 mA
Continuous current through Vdd or GND ±100 mA
TJ Operating Junction Temperature -40 to 150 °C
NEW PRODUCT
T
Storage Temperature -65 to 150 °C
STG
Note: 3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.