Diodes 2N7002W User Manual
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low-On Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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SOT-323
Gate
Equivalent Circuit
2N7002W
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Drain
Source
D
GS
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Ordering Information (Notes 4)
Part Number Case Packaging
2N7002W-7-F SOT-323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Chengdu A/T Site
K72
Shanghai A/T Site
2N7002W
Document number: DS30099 Rev. 14 - 2
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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September 2013
© Diodes Incorporated
)
)
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0M V
Gain-Source Voltage Continuous
Pulsed
Drain Current (Note 5) Continuous
Continuous @ +100C
Pulsed
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Derating above TA = +25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V
V
R
TJ, T
DSS
DGR
GSS
ID
PD
JA
STG
2N7002W
60 V
60 V
20
40
115
73
800
200
1.60
625
-55 to +150
V
mA
mW
mW
C/W
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C
Gate-Body Leakage
BV
I
DSS
I
GSS
60 70
DSS
1.0
500
10
V
VGS = 0V, ID = 10A
A
VDS = 60V, VGS = 0V
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ TJ = +25°C
@ Tj = +125°C
On-State Drain Current
Forward Transconductance
V
R
DS(ON)
I
D(ON
GS(th
gFS
1.0
1.8
2.6
0.5 1.0
80
2.0 V
7.5
13.5
VDS = VGS, ID = 250A
VGS = 5.0V, ID = 0.05A
Ω
VGS = 10V, ID = 0.5A
A
VGS = 10V, VDS = 7.5V
mS
VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
oss
C
rss
iss
22 50 pF
11 25 pF
2.0 5.0 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Turn-Off Delay Time
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002W
Document number: DS30099 Rev. 14 - 2
t
D(ON
t
D(OFF)
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7.0 20 ns
11 20 ns
VDD = 30V, ID = 0.2A,
RL = 150Ω,V
R
= 25Ω
GEN
GEN
= 10V,
September 2013
© Diodes Incorporated
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