Diodes 2N7002VC/VAC User Manual
(
)
A
A
A
A
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
SOT563
Top View
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram (Note 3)
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
• Weight: 0.003 grams (approximate)
D
2
S
2
2N7002VC
ASK Marking Code
S
G
1
D
G
2
2N7002VC/VAC
Compound. UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
D
1
1
2
G
2
2N7002VAC
(AYK Marking Code)
G
S
1
1
D
S
2
1
Ordering Information (Note 4)
Part Number Case Packaging
2N7002VC-7 SOT563 3000/Tape & Reel
2N7002VAC-7 SOT563 3000/Tape & Reel
Notes: 1. No purposefully added Lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
D
2
SK YM
S2G
Date Code Key
Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2N7002VC/VAC
Document number: DS30639 Rev. 6 - 2
S
G
1
1
D
2
SK = 2N7002VC Product Type
Marking Code (See Note 1)
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
1
D
2
YK YM
G
2
S
G
1
S
D
2
1 of 4
www.diodes.com
YK = 2N7002VAC Product Type
1
Marking Code (See Note 1)
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
1
October 2011
© Diodes Incorporated
θ
)
j
)
)
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage R
≤ 1.0MΩ V
GS
Gate-Source Voltage (Note 5) Continuous
Pulsed
Drain Current (Note 5) Continuous
Drain Current (Note 5) Pulsed
Thermal Characteristics @T
NEW PRODUCT
Characteristic Symbol Value Units
= 25°C unless otherwise specified
A
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V
DSS
DGR
V
GSS
I
I
DM
P
R
T
J, TSTG
2N7002VC/VAC
D
D
JA
60 V
60 V
±20
±40
V
280 mA
1.5 A
150 mW
833 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C
Gate-Body Leakage
BV
I
DSS
I
GSS
60 70
DSS
⎯ ⎯
⎯ ⎯
V
⎯
1.0
µA
500
±100 nA
VGS = 0V, ID = 10μA
VDS = 60V, V
GS
= 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTIC (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
V
GS(th
R
DS (ON)
I
D(ON
g
FS
1.0
⎯
⎯
0.5 1.0
80
2.5 V
⎯
7.5
⎯
13.5
⎯
⎯
⎯ ⎯
VDS = VGS, ID = 250μA
V
= 5V, ID = 0.05A,
GS
Ω
A
mS
= 10V, ID = 0.5A, T
V
GS
VGS = 10V, VDS = 7.5V
V
= 10V, ID = 0.2A
DS
= 125°C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
⎯ ⎯
C
iss
⎯ ⎯
C
oss
⎯ ⎯
C
rss
50 pF
25 pF
5.0 pF
= 25V, VGS = 0V, f = 1.0MHz
V
DS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
2N7002VC/VAC
Document number: DS30639 Rev. 6 - 2
t
⎯ ⎯
D(ON
t
⎯ ⎯
D(OFF
2 of 4
www.diodes.com
20 ns
20 ns
= 30V, ID = 0.2A, RL = 150Ω,
V
DD
V
GEN
= 10V, R
GEN
= 25Ω Turn-Off Delay Time
© Diodes Incorporated
October 2011
Loading...