Diodes 2N7002T User Manual

Product Summary

I

V

(BR)DSS

60V

R

7.5Ω @ V

DS(ON)

GS

= 5V

D

TA = 25°C

115mA

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

) and yet maintain superior switching

DS(on)

SOT523

Top View

Drain

Gate

Equivalent Circuit

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead Free, Full RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Notes 2 and 3)

• Qualified to AEC-Q101 Standards for High Reliability

echanical Data

• Case: SOT523

• Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

D

GS

Source

Top View

2N7002T

Ordering Information (Note 4)

Part Number Qualification Case Packaging

2N7002T-7-F Commercial SOT523 3,000/Tape & Reel

2N7002T-13-F Commercial SOT523 10,000/Tape & Reel

2N7002TQ-7-F Automotive SOT523 3,000/Tape & Reel

2N7002TQ-13-F Automotive SOT523 10,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb

4. For packaging details, go to our website at http://www.diodes.com.

Fire Retardants

2O3

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012

Code S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

72

YM

2N7002T

Document number: DS30301 Rev. 14 - 2

72 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

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θ

)

j

)

)

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage R

≤ 1.0MΩ V

GS

Gate-Source Voltage Continuous
Pulsed
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

V

V

Pd

R

T

j, TSTG

DSS
DGR

GSS

I

D

JA

2N7002T

60 V
60 V

±20
±40
115

73

800

V

mA

150 mW
833 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C

@ TC = 125°C

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

1.0

µA

500
±10 nA

VGS = 0V, ID = 10μA
V

DS

V

GS

= 60V, V
= ±20V, V

GS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj = 25°C

@ T

= 125°C
On-State Drain Current
Forward Transconductance

V

GS(th

R

DS (ON)

I

D(ON

gFS

1.0

⎯

2.0

⎯

4.4

0.5 1.0
80

⎯ ⎯

2.0 V

7.5

13.5
⎯

V

= VGS, ID = 250μA

DS

V

= 5.0V, ID = 0.05A

GS

Ω

VGS = 10V, ID = 0.5A

A

VGS = 10V, VDS = 7.5V

mS

V

=10V, ID = 0.2A

DS

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss

⎯

22 50 pF
11 25 pF

⎯

2.0 5.0 pF

⎯

V

= 25V, VGS = 0V, f = 1.0MHz

DS

SWITCHING CHARACTERISTICS (Note 7)

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing.

6 .Short duration pulse test used to minimize self-heating effect.

2N7002T

Document number: DS30301 Rev. 14 - 2

t

⎯

D(ON

t

⎯

D(OFF

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7.0 20 ns
11 20 ns

VDD = 30V, ID = 0.2A,
RL = 150Ω, V

GEN

= 10V, R

= 25Ω

GEN

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© Diodes Incorporated

RAIN-SOUR

CE CUR

R

N

T

R

RAIN-SOUR

CE O

N

R

TAN

C

GATE THRESH

O

OLTAG

R DRAIN-SOUR

C

C

CAPACIT

N

C

F

R DR

OUR

C

ON-R

T

C

1.0

V = 10V

V = 7.0V

GS

V = 6.0V

GS

GS

0.9

0.8

(A)
E

0.7

0.6

0.5

V = 5.0V

GS

V = 4.0V

GS

5

Ω

()
E

4

ESIS

-

3

V = 3.0V

GS

2N7002T

0.4

V = 4.0V

0.3

0.2

D

I, D

0.1
0

012

V , DRAIN-SO URCE VOLTAG E ( V)

DS

Fig. 1 On-Region Characteristics

2.5

E (V)

2.0

V = 3.0V

GS

V = 2.5V

GS

3

4

5

2

, D

V = 5.0V

DS(ON)

GS

1

00.2

V = .0VGS6

0.4

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 2 On-Resistance Variation with Gate Voltage

and Drain-Source Current

3.0

I = 250µA

D

2.5

V = 10V

GS

I = 500mA

D

GS

V = .0V

7

GS

0.6

V = VGS10

0.8

1.0

E

2.0

1.5

LD V

1.5

1.0

,

1.0

DS(ON)

0.5

GS(th)

V,

0

-50 -25

0

T , JUNCTION TEMPERA TURE ( C)

J

25

50 75

Fig. 3 Gate Threshold Variation with Temperature

60

50

)

40

E (p
A

30

100

f = 1MHz

125

150

°

ON-RESISTANCE (NORMALIZED)

0.5

0

-50

-25 0
T , JUNCTION TEMPERATURE ( C)

J

25 50

75

Fig. 4 On-Resistance Variation with Temperature

5.0

Ω

()

4.5

E
AN

4.0

3.5

ESIS

3.0

E

2.5

I = 50mA

D

100 125 150

°

2.0

20

,

10

0

C

iss

C

oss

C

rss

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 5 Typical Capacitance

1.5

AIN-S

1.0

0.5

DS(ON),

0

0

2

V , GATE-SOURCE VOLTAGE (V)

GS

468

10

Fig. 6 On-Resistance vs. Gate-Source Voltage

2N7002T

Document number: DS30301 Rev. 14 - 2

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Package Outline Dimensions

K

J

Suggested Pad Layout

Z

A

G

H

D

Y

X

2N7002T

Dim Min Max Typ

A 0.15 0.30 0.22

C

B

N

L

E

M

Dimensions Value (in mm)

C

B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
G 0.90 1.10 1.00
H 1.50 1.70 1.60

K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50

α

Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7

SOT523

⎯ ⎯

J 0.00 0.10 0.05

0° 8°

All Dimensions in mm

0.50

⎯

2N7002T

Document number: DS30301 Rev. 14 - 2

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2012, Diodes Incorporated

www.diodes.com

2N7002T

2N7002T

Document number: DS30301 Rev. 14 - 2

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