Diodes 2N7002K User Manual
M
Product Summary
V
R
(BR)DSS
60V
2 @ V
max
DS(ON)
= 10V
GS
3 @ VGS = 5V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
NEW PRODUCT
Motor Control
Power Management Functions
Backlighting
ESD protected up to 2kV
SOT23
Top View
I
max
D
TA = +25°C
380mA
310mA
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
Weight: 0.008 grams (approximate)
Gate
Gate
Protection
Diode
Equivalent Circuit
2N7002K
N-CHANNEL ENHANCEMENT MODE MOSFET
Compound. UL Flammability Classification Rating 94V-0
leadframe. Solderable per MIL-STD-202, Method 208
Drain
D
G
Source
Top View
S
e3
Ordering Information (Note 4)
Part Number Compliance Case Packaging
2N7002K-7 Standard SOT23 3000/Tape & Reel
2N7002KQ-7 Automotive SOT23 3000/Tape & Reel
2N7002K-13 Standard SOT23 10000/Tape & Reel
2N7002KQ-13 Automotive SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K7K
Chengdu A/T Site Shanghai A/T Site
YM
2N7002K
Document number: DS30896 Rev. 14 - 2
K7K
www.diodes.com
YM
1 of 6
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
August 2013
© Diodes Incorporated
)
g
g
g
g
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%) (Note 6)
NEW PRODUCT
Thermal Characteristics (@T
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6 )
Operating and Storage Temperature Range
T
Steady
State
t<5s
Steady
State
t<5s
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C, unless otherwise specified.)
Steady State
t<5s 292
Steady State
t<5s 197
V
DSS
V
GSS
I
I
I
I
I
I
DM
T
D
D
D
D
S
P
D
R
JA
P
D
R
JA
R
JC
J, TSTG
2N7002K
60 V
±20 V
380
300
430
340
310
240
350
270
0.5 A
1.2 A
370 mW
357
540 mW
240
91
-55 to +150 °C
mA
mA
mA
mA
°C/W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
60
— —
— —
— V
1.0 µA
±10 µA
VGS = 0V, ID = 10µA
= 60V, VGS = 0V
V
DS
VGS = ±20V, VDS = 0V
—
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS(ON)
|Y
V
1.0 1.6 2.5 V
—
—
SD
|
fs
—
—
80
— 0.75 1.1 V
2.0
3.0
— ms
VDS = 10V, ID = 1mA
V
= 10V, ID = 0.5A
GS
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002K
Document number: DS30896 Rev. 14 - 2
C
C
oss
C
R
Q
Q
Q
t
D(on
t
t
D(off
t
2 of 6
www.diodes.com
—
iss
rss
s
d
f
30 50 pF
—
4.2 25 pF
—
2.9 5.0 pF
—
133 —
—
0.3
—
0.2
—
0.08
—
3.9
—
3.4
—
15.7
—
9.9
—
—
—
—
—
—
—
V
= 25V, VGS = 0V
DS
f = 1.0MHz
f = 1MHz , VGS = 0V, VDS = 0V
nC
V
= 4.5V, VDS = 10V,
GS
nC
I
= 250mA
D
nC
ns
ns
V
= 30V, VGS = 10V,
DD
ns
= 25, ID = 200mA
R
G
ns
August 2013
© Diodes Incorporated
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