Diodes 2N7002E User Manual

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Page 1

Product Summary

max

(BR)DSS

60V

DS(ON)

3 @ V

max

= 10V

TA = +25°C

300mA

Description

This MOSFET has been designed to minimize the on-state resistance (R ideal for high efficiency power management applications.

) and yet maintain superior switching performance, making it

DS(ON)

Applications

 Motor Control  Power Management Functions

SOT23

Top View

Pin Out Confi

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Drain

Gate

Source

Top View

uration

Equivalent Circuit

2N7002E

Ordering Information (Note 4)

Part Number Case Packaging

2N7002E-7-F SOT23 3,000/Tape & Reel

2N7002E-13-F SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code P R S T U V W X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K7B

2N7002E

Document number: DS30376 Rev. 14 - 2

K7B

Shanghai A/T SiteChengdu A/T Site

www.diodes.com

K7B = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Drain-Gate Voltage R

 1.0M V

Gate-Source Voltage Continuous Pulsed

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

Steady

State

= +25°C

= +70°C

= +25°C

= +70°C

Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case

(Note 5) (Note 6) 540 (Note 5) (Note 6) 241 (Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C

@ T

= +125°C

Gate-Body Leakage

DSS

 

DSS

GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage Static Drain-Source On-Resistance @ TJ = +25°C

On-State Drain Current Forward Transconductance

GS(th)

DS (ON)

D(ON)

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

iss

oss

rss

Total Gate Charge (VGS = 4.5V) Qg Gate-Source Charge Gate-Drain Charge

 

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time Turn-Off Delay Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

D(ON)

D(OFF)

2N7002E

Document number: DS30376 Rev. 14 - 2

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DSS DGR

GSS

R R

J, TSTG

60 70

 

1.0

 



1.6

2.0

0.8 1.0 80

  



 

22 50 pF 11 25 pF

2.0 5.0 pF 120 223

178

 

7.0 20 ns

11 20 ns

JA

JC



1.0

500

µA

±10 nA

2.5 V 3



 A

   

 pC pC pC

2N7002E

60 V 60 V

±20 ±40

250 200

300 240

500 mA 800 mA

370

348

-55 to 150 °C

= 0V, ID = 10µA

= 60V, VGS = 0V

= ±15V, V

= 0V

VDS = VGS, ID = 250µA V

= 10V, ID = 250mA

VGS = 4.5V, ID = 200mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A

= 25V, VGS = 0V, f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

VDS = 10V, ID = 250mA

= 30V, ID = 0.2A,

= 150, V

GEN

= 10V, R

°C/W

= 25

GEN

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OUR

CE CUR

RENT

RAIN C

OUR

CE ON-R

TANC

RAIN-SOUR

CE O

N-R

TAN

OUR

ON-R

TANC

OWER

2N7002E

(A)

1.0

0.8

2.0

1.6

T = -55°C

(A)

T = 25°C

T = 125°C

0.6

0.4

AIN-S

0.2

I, D

01 2

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics



E ( )

1.2

0.8

I, D

0.4

012

V , GATE TO SOURCE VOLTAGE (V)

Fig. 2 Drain Current vs. Gate-Source Voltage



E ( )

ESIS

I = 75mA

I = 250mA

AIN-S

, D

DS(ON)

0246810

V , GATE TO SOURCE VOLTAGE (V)

Fig. 3 On Resistance vs. Gate-Source Voltage



E ( )

ESIS

, D

DS(ON)

0.2

0.4

I , DRAIN CURRENT (A)

Fig. 4 On Resistance vs. Drain Current

350

V = 4.5V

V = 10V

0.6 0.8

1.0

300

ESIS

AIN-S , D

V = 4.5V @ 200mA

V = 10V @ 250mA

N (mW) I

DISSI

250

200

150

100

DS(ON)

-50

-75

-25 0 25

T , JUNCTION TEMPERATURE (°C)

50 75

100 125

Fig. 5 On-Resistance vs. Junction Temperature

150

25 50

T , AMBIENT TEMPERATURE (°C)

100 125

150

175

200

Fig. 6 Max Power Dissipation vs. Ambient T emperature

2N7002E

Document number: DS30376 Rev. 14 - 2

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Package Outline Dimensions

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Z 2.9 X 0.8 Y 0.9

C 2.0

E 1.35

2N7002E

SOT23

0° 8° -

2N7002E

Document number: DS30376 Rev. 14 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2N7002E

Document number: DS30376 Rev. 14 - 2

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