Diodes 2N7002E User Manual

g

M

Product Summary

max

I

D

V

R

(BR)DSS

60V

DS(ON)

3 @ V

max

= 10V

GS

TA = +25°C

300mA

Description

This MOSFET has been designed to minimize the on-state resistance
(R
ideal for high efficiency power management applications.

) and yet maintain superior switching performance, making it

DS(ON)

Applications

 Motor Control
 Power Management Functions

SOT23

G

Top View

Pin Out Confi

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Drain

D

Gate

S

Source

Top View

uration

Equivalent Circuit

2N7002E

e3

Ordering Information (Note 4)

Part Number Case Packaging

2N7002E-7-F SOT23 3,000/Tape & Reel

2N7002E-13-F SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K7B

YM

2N7002E

Document number: DS30376 Rev. 14 - 2

K7B

Shanghai A/T SiteChengdu A/T Site

YM

www.diodes.com

K7B = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

1 of 5

August 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage R

 1.0M V

GS

Gate-Source Voltage Continuous
Pulsed

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

Steady

State

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

(Note 5)
(Note 6) 540
(Note 5)
(Note 6) 241
(Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C

@ T

= +125°C

C

Gate-Body Leakage

BV

DSS

I

 

DSS

I

GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance @ TJ = +25°C

On-State Drain Current
Forward Transconductance

V

GS(th)

R

DS (ON)

I

D(ON)

g

FS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge

Q

gs

Q

gd




SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

t

D(ON)

t

D(OFF)

2N7002E

Document number: DS30376 Rev. 14 - 2

2 of 5

www.diodes.com

V

DSS
DGR

V

GSS

I

D

I

D

I

S

I

DM

R
R

T

J, TSTG

60 70

 

1.0






1.6

2.0

0.8 1.0
80









 

22 50 pF
11 25 pF

2.0 5.0 pF
120
223

82

178




7.0 20 ns

11 20 ns

P

D

JA

JC



1.0

500

V

µA

±10 nA

2.5 V
3

4




A

mS







pC
pC
pC

2N7002E

60 V
60 V

±20
±40

250
200

300
240

500 mA
800 mA

370

348

91

-55 to 150 °C

V

= 0V, ID = 10µA

GS

V

= 60V, VGS = 0V

DS

V

= ±15V, V

GS

DS

= 0V

VDS = VGS, ID = 250µA
V

= 10V, ID = 250mA

GS

VGS = 4.5V, ID = 200mA
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A

V

= 25V, VGS = 0V, f = 1.0MHz

DS

VDS = 0V, VGS = 0V, f = 1.0MHz

VDS = 10V, ID = 250mA

V

= 30V, ID = 0.2A,

DD

= 150, V

R

L

GEN

= 10V, R

V

mA

mA

mW

°C/W

= 25

GEN

August 2013

© Diodes Incorporated