Diodes 2N7002DWA User Manual
Product Summary
V
R
(BR)DSS
60V
8 @ V
6 @ VGS = 10V
Package
DS(ON)
= 5V
GS
SOT363
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
• DC-DC Converters
NEW PRODUCT
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
SOT363
TA = +25°C
170mA
200mA
D
G
2
2N7002DWA
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
I
D
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• HBM Class 1C
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
S
1
1
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
D
G
1
2
HBM Class 1C
Top View
S
2
Top View
Internal Schematic
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
2N7002DWA-7 Standard SOT363 3,000/Tape & Reel
2N7002DWA-13 Standard SOT363 10,000/Tape & Reel
2N7002DWAQ-7 Automotive SOT363 3,000/Tape & Reel
2N7002DWAQ-13 Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
Marking Information
MM0 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MM0 YM
MM0 YM
MM1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
MM1 YM
MM1 YM
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
MM4 YM
MM4 YM
2N7002DWA
Document number: DS36120 Rev. 6 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
)
g
g
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
Continuous Drain Current (Note 6) V
Continuous Drain Current (Note 7) V
Continuous Drain Current (Note 7) V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
NEW PRODUCT
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
2N7002DWA
Characteristic Symbol Value Units
60 V
±20 V
180
140
150
120
200
160
170
140
mA
mA
mA
mA
700 mA
= 10V
GS
5V
GS =
10V
GS =
5V
GS =
Steady
State
Steady
State
Steady
State
Steady
State
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
P
R
JA
P
R
JA
R
JC
T
, T
J
D
D
STG
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
300 mW
435 °C/W
400 mW
330 °C/W
139 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
60
— —
— —
—
— V
1.0 µA
±5 µA
V
V
V
= 0V, ID = 250µA
GS
= 60V, V
DS
GS =
GS
±20V, V
DS
= 0V
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS(th
R
DS(ON)
g
V
FS
SD
0.8
— —
— —
80
— 0.8 1.2 V
—
—
2.5 V
8
6
— mS
V
V
V
V
VGS = 0V, IS = 115mA
= VGS, ID = 250µA
DS
= 5.0V, ID = 0.115A
GS
= 10.0V, ID = 0.115A
GS
= 10V, ID = 0.115A
DS
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
G
Total Gate Charge VGS = 10V Qg
Total Gate Charge VGS = 4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
—
—
—
—
—
—
—
—
—
—
—
—
22.0 —
3.2
2.0
88
0.87
0.43
0.11
0.11
3.3
3.2
12.0
6.3
—
—
—
—
—
—
—
—
—
—
—
pF
nC
nS
= 25V, VGS = 0V, f = 1.0MHz
V
DS
VDS = 0V, VGS = 0V, f = 1.0MHz
= 10V, VDS = 30V,
V
GS
= 150mA
I
D
= 30V, ID = 0.115A, V
V
DD
R
= 25
GEN
GEN
= 10V
,
2N7002DWA
Document number: DS36120 Rev. 6 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
Loading...