Diodes 2N7002DW User Manual

Page 1
Product Summary
I
max
D
V
R
(BR)DSS
60V
DS(ON)
7.5Ω @ V
max
= 5V
GS
TA = +25°C
0.23A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(ON)
ideal for high efficiency power management applications.
Applications
• Motor Control
• Power Management Functions
SOT363
Top View Top View
2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
D
2
S
2
Internal Schematic
S
G
1
1
D
G
1
2
Ordering Information (Note 5)
Part Number Compliance Case Packaging
2N7002DW-7-F Standard SOT363 3,000/Tape & Reel
2N7002DWQ-7-F Automotive SOT363 3,000/Tape & Reel
2N7002DW-13-F Standard SOT363 10,000/Tape & Reel
2N7002DWQ-13-F Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Fire Retardants.
2O3
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K72
YM
YM
K72
K72
2N7002DW
Document number: DS30120 Rev. 16 - 2
YM
YM
www.diodes.com
K72 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
K72
Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
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© Diodes Incorporated
Page 2
)
)
)
2N7002DW
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage R
≤ 1.0MΩ V
GS
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous
Pulsed
= +25°C
T
A
T
= +70°C
A
= +100°C
T
A
V
DSS
DGR
V
GSS
V
GSS
I
D
I
S
I
DM
60 V
60 V
±20 V
±40 V
0.23
0.18
A
0.14
0.53 A
0.8 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
T
= +25°C
A
Total Power Dissipation (Note 6)
TA = +70°C
TA = +100°C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Steady state
T
= +25°C
A
TA = +70°C
TA = +100°C
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
Thermal Resistance, Junction to Case (Note 7) Steady state
Operating and Storage Temperature Range
P
R
P
R
R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
θ
0.31
0.2
W
0.12
410 °C/W
0.4
0.25
W
0.15
318 °C/W
135 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C
@ T
= +125°C
C
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
60 70
⎯ ⎯
⎯ ⎯
⎯
1.0
500
±10 nA
V
µA
V
V
V
= 0V, ID = 10µA
GS
= 60V, VGS = 0V
DS
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ TJ = +25°C @ T
= +125°C
J
On-State Drain Current Forward Transconductance Diode Forward Voltage
V
GS(th
R
DS (ON)
I
D(ON
g
V
FS
SD
1.0
⎯
0.5 1.0 80
⎯
⎯
3.2
4.4
⎯ ⎯
2.0 V
7.5
13.5
⎯
Ω
A
mS
0.78 1.5 V
V
= VGS, ID = 250µA
DS
= 5.0V, ID = 0.05A
V
GS
V
= 10V, ID = 0.5A
GS
V
= 10V, VDS = 7.5V
GS
V
=10V, ID = 0.2A
DS
V
= 0V, IS = 115mA
GS
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
C
⎯
iss
C
⎯
oss
C
⎯
rss
22 50 pF 11 25 pF
2.0 5.0 pF
V f = 1.0MHz
= 25V, VGS = 0V
DS
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
Turn-Off Delay Time
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
2N7002DW
Document number: DS30120 Rev. 16 - 2
t
D(on
t
D(off)
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⎯
⎯
7.0 20
11.0 20
ns
V
= 30V, ID = 0.2A,
DD
R
= 150Ω, V
L
R
= 25Ω
GEN
November 2013
© Diodes Incorporated
GEN
= 10V,
Page 3
RAIN-SOUR
CE CUR
REN
T
R, NOR
R, NOR
R
CUR
R
T
1.0
7
2N7002DW
6
(A)
0.8
5
D
I, D
0.6
0.4
0.2
2.0
0
0
123
V , DRAIN-SOURCE VOLTAGE (V)
DS
45
Figure 1 On-Region Characteristics
4
MALIZED
3
DS(ON)
2
DRAIN-SOURCE ON-RESISTANCE
1
0
00.2
Figure 2 On-Resistance vs. Drain Current
6
0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
5
1.5
MALIZED
1.0
DS(ON)
V = 5.0V, I
GS D
0.5
DRAIN-SOURCE ON-RESISTANCE
0
-55 -30 -5 20 45 70 95 120 145 T , JUNCTION TEMPERATURE ( C)
J
Figure 3 On-Resistance vs. Junction Temperature
1
R
DS(on)
Limited
(A)
EN
AIN
D
I, D
0.1
0.01
DC
P = 10s
W
P = 1s
P = 100ms
W
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
= 0.05A
°
4
3
2
DS(ON)
R, NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0
0 2 4 6 8 1012141618
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 4 On-Resistance vs. Gate-Source Voltage
T = 150°C
J(max)
T = 25°C
A
Single Pulse
0.001
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 5 SOA, Safe Operation Area
2N7002DW
Document number: DS30120 Rev. 16 - 2
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© Diodes Incorporated
Page 4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
J
A
Dim Min Max
B C
H
M
D
L
F
A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Z
2N7002DW
Document number: DS30120 Rev. 16 - 2
G
Y
X
C2
C2
Dimensions Value (in mm)
C1
C1 1.9 C2 0.65
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SOT363
0° 8°
Z 2.5
G 1.3
X 0.42 Y 0.6
2N7002DW
November 2013
© Diodes Incorporated
Page 5
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
2N7002DW
2N7002DW
Document number: DS30120 Rev. 16 - 2
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November 2013
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