Diodes 2N7002DW User Manual

Product Summary

I

max

D

V

R

(BR)DSS

60V

DS(ON)

7.5Ω @ V

max

= 5V

GS

TA = +25°C

0.23A

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

• Motor Control

• Power Management Functions

SOT363

Top View Top View

2N7002DW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Notes 3 & 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

D

2

S

2

Internal Schematic

S

G

1

1

D

G

1

2

Ordering Information (Note 5)

Part Number Compliance Case Packaging

2N7002DW-7-F Standard SOT363 3,000/Tape & Reel

2N7002DWQ-7-F Automotive SOT363 3,000/Tape & Reel

2N7002DW-13-F Standard SOT363 10,000/Tape & Reel

2N7002DWQ-13-F Automotive SOT363 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Fire Retardants.

2O3

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K72

YM

YM

K72

K72

2N7002DW

Document number: DS30120 Rev. 16 - 2

YM

YM

www.diodes.com

K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

K72

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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November 2013

© Diodes Incorporated

)

)

)

2N7002DW

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage R

≤ 1.0MΩ V

GS

Gate-Source Voltage

Continuous Drain Current (Note 7) VGS = 5V

Steady

State

Maximum Continuous Body Diode Forward Current (Note 7)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Continuous

Pulsed

= +25°C

T

A

T

= +70°C

A

= +100°C

T

A

V

DSS

DGR

V

GSS

V

GSS

I

D

I

S

I

DM

60 V

60 V

±20 V

±40 V

0.23

0.18

A

0.14

0.53 A

0.8 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

T

= +25°C

A

Total Power Dissipation (Note 6)

TA = +70°C

TA = +100°C

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Steady state

T

= +25°C

A

TA = +70°C

TA = +100°C

Thermal Resistance, Junction to Ambient (Note 7)

Steady state

Thermal Resistance, Junction to Case (Note 7) Steady state

Operating and Storage Temperature Range

P

R

P

R

R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

θ

0.31

0.2

W

0.12

410 °C/W

0.4

0.25

W

0.15

318 °C/W

135 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C

@ T

= +125°C

C

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

60 70

⎯ ⎯

⎯ ⎯

⎯

1.0

500

±10 nA

V

µA

V

V

V

= 0V, ID = 10µA

GS

= 60V, VGS = 0V

DS

= ±20V, VDS = 0V

GS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance @ TJ = +25°C
@ T

= +125°C

J

On-State Drain Current
Forward Transconductance
Diode Forward Voltage

V

GS(th

R

DS (ON)

I

D(ON

g

V

FS

SD

1.0

⎯

0.5 1.0
80

⎯

⎯

3.2

4.4

⎯ ⎯

2.0 V

7.5

13.5

⎯

Ω

A

mS

0.78 1.5 V

V

= VGS, ID = 250µA

DS

= 5.0V, ID = 0.05A

V

GS

V

= 10V, ID = 0.5A

GS

V

= 10V, VDS = 7.5V

GS

V

=10V, ID = 0.2A

DS

V

= 0V, IS = 115mA

GS

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯

iss

C

⎯

oss

C

⎯

rss

22 50 pF
11 25 pF

2.0 5.0 pF

V
f = 1.0MHz

= 25V, VGS = 0V

DS

SWITCHING CHARACTERISTICS (Note 9)

Turn-On Delay Time

Turn-Off Delay Time

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

2N7002DW

Document number: DS30120 Rev. 16 - 2

t

D(on

t

D(off)

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www.diodes.com

⎯

⎯

7.0 20

11.0 20

ns

V

= 30V, ID = 0.2A,

DD

R

= 150Ω, V

L

R

= 25Ω

GEN

November 2013

© Diodes Incorporated

GEN

= 10V,