Diodes 2N7002A User Manual

Product Summary

V

R

(BR)DSS

60V

DS(ON)

6Ω @ V

max

GS

= 5V

Description

This MOSFET has been designed to minimize the on-state
resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

 Motor Control

NEW PRODUCT

 Power Management Functions

ESD PROTECTED TO 1.2kV

SOT23

Top View Equivalent Circuit

I

max

D

TA = +25°C

200mA

2N7002A

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 N-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Small Surface Mount Package
 ESD Protected Gate, 1.2kV HBM
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Drain

D

Gate

S

Gate
Protection
Diode

G

Source

Top View

Pin-Out

e3

Ordering Information (Note 4)

Part Number Case Packaging

2N7002A-7 SOT23 3,000/Tape & Reel

2N7002A-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

2N7002A

Document number: DS31360 Rev. 12 - 2

1 of 6

www.diodes.com

July 2013

© Diodes Incorporated

M

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

NEW PRODUCT

Code 1 2 3 4 5 6 7 8 9 O N D

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

MN1

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

YM

MN1

Shanghai A/T Site Chengdu A/T Site

Steady

State

Steady

State

= +25°C

T

A

T

= +85°C

A

T

= +100°C

A

T

= +25°C

A

T

= +85°C

A

T

= +100°C

A

MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

V

DSS

V

GSS

60 V
±20 V
180

I

D

130
115

220

I

D

160
140

I

S

I

DM

0.5 A

800 mA

2N7002A

mA

mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

(Note 5)
(Note 6) 540
(Note 5)
(Note 6) 241
(Note 6)

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

P

R

θJA

R

θJC

T

J, TSTG

D

370

mW

348

°C/W

91

-55 to +150 °C

2N7002A

Document number: DS31360 Rev. 12 - 2

2 of 6

www.diodes.com

July 2013

© Diodes Incorporated