Diodes 2N7002 User Manual
2N7002
60V SOT23 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
R
7.5 @ V
60
7.5 @ V
(⍀)I
DS(on)
= 10V 0.5
GS
= 5V 0.05
GS
D
(A)
Description
A small signal MOSFET for general purpose switching applications.
Features
• Fast switching speed
• Low gate drive capability
• SOT23 package
Applications
• General switching applications
Ordering information
Device Reel size
(inches)
2N7002 7 8 3,000
Tape width
(mm)
Quantity per reel
D
G
S
S
D
Device marking
702
Issue 5 - October 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
Top view
G
2N7002
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-source voltage V
Continuous drain current at T
=25°C I
amb
Pulsed drain current I
Gate-source voltage V
Power dissipation at T
=25°C P
amb
Operating and storage temperature range T
j
DM
, T
DS
D
GS
tot
stg
60 V
115 mA
800 mA
±40 V
330 mW
-55 to +150 °C
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Max. Unit Conditions
Drain-source breakdown voltage BV
Gate-source threshold voltage V
Gate-body leakage I
Zero gate voltage drain current I
On-state drain current
(a)
Static drain-source on-state
voltage
(a)
Static drain-source on-state
resistance
Forward transconductance
Input capacitance
(a)
(a)(b)
(b)
Common source output
capacitance
(b)
Reverse transfer capacitance
Turn-on time
Turn-off time
(b)(c)
(b)(c)
(b)
GSS
DSS
I
D(on)
V
R
g
C
C
C
t
(on)
t
(off)
DSS
GS(th)
DS(on)
DS(on)
fs
iss
oss
rss
60 V ID= 10A, VGS=0V
12.5VID= 250A, VDS=V
10 nA VGS=±20V, VDS=0V
1 AVDS= 48V, VGS=0V
500 A
VDS= 48V, VGS=0V, T=125°C
500 mA VDS= 25V, VGS= 10V
3.75 V VGS= 10V, ID= 500mA
375 mV V
= 5V, ID= 50mA
GS
7.5 ⍀ VGS= 10V, ID= 500mA
7.5 ⍀ V
= 5V, ID= 50mA
GS
80 mS VDS= 25V, ID= 500mA
50 pF
25 pF
V
= 25V, VGS=0V f=1MHz
DS
5pF
20 ns VDD≈30V, ID= 200mA,
=25⍀, RL=150⍀
R
20 ns
g
GS
NOTES:
(a) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
(b) Sample test.
(c) Switching times measured with 50⍀ source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device.
Issue 5 - October 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
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