Page 1
θ
θ
(BR)
(BR)
(BR)
)
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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type (2DB1714) Available
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Characteristic Symbol Value Unit
Top View
= 25°C unless otherwise specified
A
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
T
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
E
Device Schematic
2DD2679
LOW V
UL Flammability Classification Rating 94V-0
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
O
R
R
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
3
E
2
4
C
O
P
T
Pin Out Configuration
C
1
B
W
E
I
V
30 V
30 V
6 V
4 A
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
4. Device mounted on FR-4 PCB with 1 inch
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2679
Document number: DS31629 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
T
= 25°C unless otherwise specified
V
V
V
I
CBO
I
EBO
V
CE(SAT
h
C
2
Copper pad layout.
f
FE
obo
T
CBO
CEO
EBO
30
30
6
⎯ ⎯
⎯ ⎯
⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
J
STG
-55 to +150 °C
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.1
0.1
80 370 mV
⎯
11
240
680
⎯
⎯
0.9 W
139 °C/W
2 W
62.5 °C/W
V
I
= 10μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 10μA, IC = 0
E
μA
μA
= 30V, IE = 0
V
CB
= 6V, IC = 0
V
EB
IC = 1.5A, IB = 75mA
⎯ VCE = 2V, IC = 200mA
V
= 10V, IE = 0,
pF
MHz
CB
f = 1MHz
V
= 2V, IC = 100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated
Page 2
P, P
OWER
PATIO
N
C
O
CTO
R CUR
R
T
C
O
CTO
R CUR
RENT
C CUR
RENT G
C
O
C
TOR
T
T
R
T
T
R
TUR
O
OLT
G
2.0
10
2DD2679
NEW PRODUCT
1.6
1
(mW)
1.2
DISSI
0.8
(A)
EN
0.1
Pw = 100ms
DC
Pw = 10ms
LLE
D
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Power Dissipation vs.
Ambient Temp er ature
2.0
1.8
1.6
(A)
1.4
I = 5mA
B
I = 4mA
B
1.2
I = 3mA
1.0
B
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Coll ect or-Emitt er Voltage (Not e 3)
1,000
T = 25°C
A
T = 85°C
T = 150°C
A
A
AIN
T = -55°C
A
100
LLE
C
I,
0.8
0.6
0.4
I = 2mA
B
I = 1mA
B
0.2
0
012345
V , COLLEC TOR-EMIT T ER VO LTAGE (V )
CE
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
E
I/I = 20
CB
-EMI
T = 150°C
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
FE
h, D
V = 2V
CE
10
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
C
1.2
V = 2V
E (V)
A
N V
N-
E
1.0
0.8
0.6
0.4
0.2
CE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
0.01
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
BE(ON)
0
V , BASE-EMI
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
2DD2679
Document number: DS31629 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
Page 3
T
TER
T
U
RAT
O
OLTAG
C
P
C
TANC
F
GAIN
N
T
H PRODUCT
H
T
R
T T
H
R
R
TANC
NEW PRODUCT
2DD2679
1.2
E (V)
I = 20
/I
CB
1,000
f = 1MHz
1.0
N V
I
0.8
T = -55°C
A
)
100
C
E (p
ibo
0.6
T = 25°C
A
SA
T = 85°C
0.4
A
T = 150°C
A
0.2
0
1 10 100 1,000 10,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
I
A
A
10
1
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
C
obo
z)
(M
100
DWID
10
-BA
V = 2V
CE
T
f,
f = 100MHz
1
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
0.1
0.01
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 133°C/W
θ
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA
Duty Cycle, D = t /t
R
θ
JA
θ
12
E
ESIS
MAL
E
ANSIEN
r(t),
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 10 Transient Thermal Response
2DD2679
Document number: DS31629 Rev. 2 - 2
3 of 4
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December 2008
© Diodes Incorporated
Page 4
2DD2679
Ordering Information (Note 6)
Part Number Case Packaging
2DD2679-13 SOT89-3L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
2679
2679 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
NEW PRODUCT
D1
E
B1
B
8
°
(
4
X
)
D
0
0
2
.
0
R
C
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
H
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
L
e
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
A
L 0.90 1.20 1.05
All Dimensions in mm
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
X3
X1
Dimensions Value (in mm)
X1 1.7
Y1
X2 0.9
X3 0.4
Y1 2.7
X2
Y3
C
Y2
Y2 1.3
Y3 1.9
C 3.0
IMPORTANT NOTICE
LIFE SUPPORT
2DD2679
Document number: DS31629 Rev. 2 - 2
4 of 4
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December 2008
© Diodes Incorporated
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