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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Top View
= 25°C unless otherwise specified
A
B
Device Schematic
LOW V
2DD2678
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
O
R
T
L
L
C
E
C
O
2,4
4
1
E
S
A
C
3
E
T
I
M
T
E
R
V
CBO
V
CEO
V
EBO
I
CM
I
C
O
T
Pin Out Configuration
3
E
2
C
1
B
W
E
I
V
P
15 V
12 V
6 V
6 A
3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2678
Document number: DS31637 Rev. 3 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
T
= 25°C unless otherwise specified
V
V
V
I
I
V
CE(SAT
C
2
copper pad layout.
CBO
EBO
h
FE
obo
f
T
CBO
CEO
EBO
15
12
6
⎯ ⎯
⎯ ⎯
⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
J
STG
-55 to +150 °C
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.1
0.1
90 250 mV
⎯
26
170
680
⎯
⎯
0.9 W
139 °C/W
2 W
62.5 °C/W
V
I
= 10μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 10μA, IC = 0
E
μA
μA
= 15V, IE = 0
V
CB
= 6V, IC = 0
V
EB
IC = 1.5A, IB = 30mA
⎯ VCE = 2V, IC = 500mA
V
= 10V, IE = 0,
pF
MHz
CB
f = 1MHz
V
= 2V, IC = 100mA,
CE
f = 100MHz
© Diodes Incorporated
April 2010
2DD2678
2.0
2.5
(mW)
DISSI
D
1,000
AIN
100
FE
h, D
1.6
1.2
0.8
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
Fig. 1 Power Dissipation vs.
Ambient Temp er ature
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = 2V
CE
100 125
150
2.0
(A)
I = 5mA
B
E
1.5
I = 4mA
B
I = 3mA
B
1.0
LLE
0.5
C
I,
I = 2mA
B
I = 1mA
B
0
01 2345
V , COLLECTOR-EMITTER VOLTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
I/I = 20
CB
-EMI
0.1
T = 150°C
T = 85°C
A
A
VOLTAGE (V)
LLE
T = -55°C
A
0.01
SATURATION
CE(SAT)
V,
T = 25°C
A
10
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
V = 2V
E (V)
1.0
L
CE
V
0.8
-
T = -55°C
A
0.6
E
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
A
0.2
BE(ON)
0
V , BASE-EMI
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.001
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
I = 20
/I
CB
E (V)
1.0
N V
0.8
I
T = -55°C
A
A
0.6
T = 25°C
A
SA
E
T = 85°C
A
0.4
T = 150°C
A
0.2
0
1 10 100 1,000 10,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2678
Document number: DS31637 Rev. 3 - 2
2 of 4
www.diodes.com
April 2010
© Diodes Incorporated