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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type Available (2DB1697)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Characteristic Symbol Value Unit
Top View
= 25°C unless otherwise specified
A
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
T
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
E
Device Schematic
2DD2661
LOW V
UL Flammability Classification Rating 94V-0
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
O
R
R
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
3
E
2
4
C
O
P
T
Pin Out Configuration
C
1
B
W
E
I
V
15 V
12 V
6 V
4 A
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2661
Document number: DS31635 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
T
= 25°C unless otherwise specified
V
V
V
I
I
V
CE(SAT
C
2
copper pad layout.
CBO
EBO
h
FE
obo
f
T
CBO
CEO
EBO
15
12
6
⎯ ⎯
⎯ ⎯
⎯ ⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
J
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
26
170
0.9 W
139 °C/W
2 W
62.5 °C/W
-55 to +150 °C
V
I
= 10μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 10μA, IC = 0
0.1
0.1
μA
μA
180 mV
680
⎯
⎯
⎯ VCE = 2V, IC = 200mA
pF
MHz
E
= 15V, IE = 0
V
CB
= 6V, IC = 0
V
EB
IC = 1A, IB = 50mA
V
= 10V, IE = 0,
CB
f = 1MHz
V
= 2V, IC = 100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated

2DD2661
2.0
2.5
NEW PRODUCT
1.6
(W)
I
1.2
DISSI
0.8
D
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Pow er Dissipat io n vs. Ambi ent Tem perature
1,000
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
100
FE
h, D
V = 2V
CE
150
2.0
(A)
E
1.5
I = 5mA
B
I = 4mA
B
I = 3mA
B
1.0
I = 2mA
LLE
C
0.5
I,
0
048121620
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
B
I = 1mA
B
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
0.1
I/I = 20
CB
T = 150°C
A
T = 85°C
A
T = 25°C
T = -55°C
A
A
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
V,
10
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
E (V)
V = 2V
CE
1.0
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
A
0.2
BE(ON)
0
V , BASE-EMI
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.001
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
E (V)
I = 20
/I
A
CB
1.0
N V
I
0.8
T = -55°C
A
SA
0.6
T = 25°C
A
T = 85°C
A
0.4
T = 150°C
A
0.2
1 10 100 1,000 10,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2661
Document number: DS31635 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated

1,000
f = 1MHz
)
E (p
100
C
ibo
A
C
obo
10
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
NEW PRODUCT
Ordering Information (Note 6)
Part Number Case Packaging
2DD2661-13 SOT89-3L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1,000
z)
(M
100
D
10
AIN-BANDWID
T
f,
V = 2V
CE
f = 100MHz
1
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
2DD2661
Marking Information
YWW
2661
2661 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
D1
E
B1
B
8
°
(
4
X
)
D
2DD2661
Document number: DS31635 Rev. 2 - 2
0
0
2
.
0
R
C
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
H
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
L
e
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
A
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L 0.90 1.20 1.05
All Dimensions in mm
December 2008
© Diodes Incorporated

2DD2661
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
NEW PRODUCT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
X3
X1
Dimensions Value (in mm)
Y1
X2
Y3
C
Y2
IMPORTANT NOTICE
LIFE SUPPORT
X1 1.7
X2 0.9
X3 0.4
Y1 2.7
Y2 1.3
Y3 1.9
C 3.0
2DD2661
Document number: DS31635 Rev. 2 - 2
4 of 4
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December 2008
© Diodes Incorporated