Diodes 2DD2661 User Manual

θ
θ
(BR)
(BR)
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Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary PNP Type Available (2DB1697)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Maximum Ratings @T
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
Characteristic Symbol Value Unit
Top View
= 25°C unless otherwise specified
A
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
T
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
E
Device Schematic
2DD2661
LOW V
UL Flammability Classification Rating 94V-0
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
O
R
R
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
3
E
2
4
C
O
P
T
Pin Out Configuration
C
1
B
W
E
I
V
15 V 12 V
6 V 4 A 2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C PD Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2661
Document number: DS31635 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
T
= 25°C unless otherwise specified
V V V
I I
V
CE(SAT
C
2
copper pad layout.
CBO EBO
h
FE
obo
f
T
CBO CEO EBO
15 12
6
270
1 of 4
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R
JA
R
JA
, T
J
STG
⎯ ⎯ ⎯ ⎯
26
170
0.9 W
139 °C/W
2 W
62.5 °C/W
-55 to +150 °C
V
I
= 10μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 10μA, IC = 0
0.1
0.1
μA μA
180 mV 680
VCE = 2V, IC = 200mA
pF
MHz
E
= 15V, IE = 0
V
CB
= 6V, IC = 0
V
EB
IC = 1A, IB = 50mA
V
= 10V, IE = 0,
CB
f = 1MHz V
= 2V, IC = 100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated
P, P
OWER
PAT
O
N
C
O
CTO
R CUR
R
N
T
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
2
T
TER TURN-O
OLTAG
T
TER
TURAT
O
OLT
G
2DD2661
2.0
2.5
1.6
(W) I
1.2
DISSI
0.8
D
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Pow er Dissipat io n vs. Ambi ent Tem perature
1,000
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
100
FE
h, D
V = 2V
CE
150
2.0
(A) E
1.5
I = 5mA
B
I = 4mA
B
I = 3mA
B
1.0
I = 2mA
LLE
C
0.5
I,
0
048121620
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
B
I = 1mA
B
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
0.1
I/I = 20
CB
T = 150°C
A
T = 85°C
A
T = 25°C
T = -55°C
A
A
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
V,
10
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
E (V)
V = 2V
CE
1.0
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
A
0.2
BE(ON)
0
V , BASE-EMI
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.001 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
E (V)
I = 20
/I
A
CB
1.0
N V I
0.8
T = -55°C
A
SA
0.6
T = 25°C
A
T = 85°C
A
0.4
T = 150°C
A
0.2 1 10 100 1,000 10,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2661
Document number: DS31635 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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