Diodes 2DD2656 User Manual
θ
θ
(BR)
(BR)
(BR)
)
Please click here to visit our online spice models database.
Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (2DB1694)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C
B
Top View Device Schematic
V
CBO
V
CEO
V
EBO
I
C
I
CM
E
2DD2656
30 V
30 V
6 V
1 A
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2% .
2DD2656
Document number: DS31638 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
= 25°C unless otherwise specified
V
V
V
I
I
V
CE(SAT
C
2
copper pad layout.
CBO
EBO
h
FE
obo
f
T
CBO
CEO
EBO
30
30
6
⎯ ⎯
⎯ ⎯
⎯
270
⎯
⎯
1 of 4
www.diodes.com
R
JA
R
JA
, T
T
J
STG
-55 to +150
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.1
0.1
100 350 mV
⎯
5
270
680
⎯
⎯
300 mW
417
°C/W
500 mW
250
°C/W
°C
V
I
= 10μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 10μA, IC = 0
E
μA
μA
⎯
pF
MHz
= 15V, IE = 0
V
CB
= 6V, IC = 0
V
EB
= 500mA, IB = 25mA
I
C
VCE = 2V, IC = 100mA
= 10V, IE = 0,
V
CB
f = 1MHz
V
= 2V, IC = 100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated
P, P
OWER
P
TIO
C
O
CTO
R C
U
R
R
T
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
T
T
R
TURN-O
OLT
G
2
T
T
R
T
U
R
T
O
OLTAG
NEW PRODUCT
2DD2656
(A)
EN
1.0
0.8
0.6
0.4
I = 5mA
B
I = 4mA
B
I = 3mA
B
I = 2mA
B
I = 1mA
B
LLE
C
I,
0.2
0
01 2 345
V , COLLECTOR-EMITTER VOLTAGE ( V )
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
I/I = 20
CB
0.6
0.5
N (W)
0.4
A
0.3
DISSI
0.2
D
0.1
10,000
(Note 4)
(Note 3)
0
0
25
50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
150
Fig. 1 Po w er D issipatio n vs. Ambient Temperat ur e
175
200
1,000
T = 85°C
A
T = 150°C
A
-EMI
T = 25°C
A
T = -55°C
A
100
FE
h, D
V = 2V
CE
10
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.2
E (V)
A
N V
1.0
0.8
0.6
V = 2V
CE
T = -55°C
A
E
T = 25°C
A
0.4
T = 85°C
A
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.01
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.
I = 20
E (V)
/I
CB
1.0
N V
0.8
I
A
T = -55°C
A
0.6
SA
T = 25°C
A
E
0.4
T = 85°C
A
0.2
T = 150°C
A
BE(ON)
0
V , BASE-EMI
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collecto r Cu r re nt
0.2
T = 150°C
A
0
0.1
BE(SAT)
V , BASE-EMI
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2656
Document number: DS31638 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
Loading...